-0--R09 Search Results
-0--R09 Datasheets (6)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
CWS60R090AZ
|
Wuhan Xinyuan Semiconductor Co Ltd | 600V N-Channel Super Junction MOSFET CWS60R090A with 90 mΩ RDS(on), 40A continuous drain current, low gate charge, and fast switching for high-efficiency power applications. | Original | ||||
CWS60R099BZ
|
Wuhan Xinyuan Semiconductor Co Ltd | 600V N-Channel Super Junction MOSFET CWS60R099B with 99 mOhm RDS(on), 40A continuous drain current, low gate charge, and fast switching for high efficiency power applications. | Original | ||||
SLH60R090E7
|
Maplesemi | 600V N-Channel Super-JMOSFET SLH60R090E7 with 38A continuous drain current, 78mΩ RDS(on) at VGS = 10V, low gate charge of 52nC, and 100% avalanche tested for high reliability in power switching applications. | Original | ||||
SLI60R090E7
|
Maplesemi | 600V N-channel Super-JMOSFET with 38A continuous drain current, 78mΩ typical RDS(on) at VGS = 10V, 52nC gate charge, and 172W power dissipation in TO-262 package. | Original | ||||
CWS60R099BF
|
Wuhan Xinyuan Semiconductor Co Ltd | 600V N-Channel Super Junction MOSFET CWS60R099B with 99 mOhm RDS(on), 40A continuous drain current, low gate charge, and fast switching for high efficiency power applications. | Original | ||||
CWS60R090AF
|
Wuhan Xinyuan Semiconductor Co Ltd | 600V N-Channel Super Junction MOSFET CWS60R090A with 90 mΩ RDS(on), 40A continuous drain current, low gate charge, and fast switching for high-efficiency power applications. | Original |
-0--R09 Price and Stock
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