--120R Search Results
--120R Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 75844-120R10LF |
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BergStik®, Board to Board connector, Unshrouded vertical header, Through Hole, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. | |||
| 75844-120R20LF |
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BergStik®, Board to Board connector, Unshrouded vertical header, Through Hole, Double Row, 20 Positions, 2.54mm (0.100in) Pitch. | |||
| 71918-120RLF |
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Quickie Eject Latch Shrouded Header, Through Hole, Vertical, Double Row, 20 Positions, 2.54mm (0.100in) Pitch | |||
| 75844-120R08LF |
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BergStik®, Board to Board connector, Unshrouded vertical header, Through Hole, Double Row, 8 Positions, 2.54mm (0.100in) Pitch. | |||
| 77313-120R20LF |
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BergStik®, Board to Board connector, Unshrouded Header, 2.54 mm Pitch, Vertical, Double Row,Through Hole, 20 Positions |
--120R Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
HCCC120R080H1
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VANGUARD | 1200V/37A N-Channel Advanced Power MOSFET with 80 mΩ RDS(on) at VGS=20V, TO-263-7L package, designed for high-voltage power applications featuring low on-resistance and high-speed switching. | Original | ||||
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HCCW120R080H1
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VANGUARD | 1200V/80mΩ N-Channel SiC Power MOSFET in TO-247 package with 36A continuous drain current, 80 mΩ typical RDS(on) at 25°C, and high-speed switching capability. | Original | ||||
|
HCCZ120R040H1
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VANGUARD | 1200V/55A N-Channel SiC MOSFET with 42mΩ RDS(on) at VGS=20V, TO-247-4L package, designed for high-speed switching, featuring low gate charge, low output capacitance, and avalanche capability. | Original | ||||
|
NCES120R062T4
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NCEPOWER | 1200V, 26A N-channel SiC power MOSFET in a TO-247-4L package with low on-resistance, fast switching speed, and a driver source terminal for enhanced performance. | Original | ||||
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HCCW120R040H1
|
VANGUARD | 1200V/55A N-Channel Advanced Power MOSFET with 42 mΩ RDS(on) at VGS=20V, TO-247 package, designed for high-voltage power applications with low on-resistance and fast switching capabilities. | Original | ||||
|
NCES120R018T4
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NCEPOWER | 1200V, 81A N-channel SiC power MOSFET in TO-247-4L package with low on-resistance, fast switching speed, and Pb-free lead plating; designed for high-efficiency applications requiring minimal power loss. | Original | ||||
|
HCCZ120R080H1
|
VANGUARD | 1200V/80mΩ N-Channel SiC Power MOSFET in TO-247-4L package with 36A continuous drain current, 80 mΩ typical on-resistance at 25°C, and high-speed switching capability. | Original | ||||
|
NCES120R036T4
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NCEPOWER | 1200V, 50A N-channel SiC power MOSFET with a 4-pin TO-247-4L package, featuring low on-resistance of 36 mΩ at VGS = 18V, fast switching speed, and Pb-free lead plating compliant to RoHS. | Original |
--120R Price and Stock
Select Manufacturer
YAGEO Corporation RC1206FR-13120RLRES 120 OHM 1% 1/4W 1206 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RC1206FR-13120RL | Digi-Reel | 19,722 | 1 |
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Buy Now | |||||
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RC1206FR-13120RL | 20,000 | 20,000 |
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Buy Now | ||||||
TE Connectivity EP2WSS120RJEP 2W (SS) 120R 5% |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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EP2WSS120RJ | Cut Tape | 4,950 | 1 |
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Buy Now | |||||
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EP2WSS120RJ | Bulk | 8 | 10 |
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Buy Now | |||||
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EP2WSS120RJ |
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Buy Now | ||||||||
Vishay Dale RCP1206W120RFEARESISTOR, SMD, 120, 1%, 1206 CAS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RCP1206W120RFEA | Digi-Reel | 3,950 | 1 |
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Buy Now | |||||
Eaton Bussmann FP2-D120-RFIXED IND 120NH 37A 0.26MOHM SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FP2-D120-R | Cut Tape | 1,658 | 1 |
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Buy Now | |||||
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FP2-D120-R | 1,700 |
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Buy Now | |||||||
Infineon Technologies AG AIMCQ120R030M1TXTMA1SIC_DISCRETE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AIMCQ120R030M1TXTMA1 | Cut Tape | 1,041 | 1 |
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Buy Now | |||||