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--00A Datasheets (469)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 00AY240-C | ATGBICS | IBM COMPATIBLE TRANSCEIVER SFP 1 | Original | 806.6KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 00AY765-C | ATGBICS | CABLE SFP+ TO SFP+ M-M 2M | Original | 1.05MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJSMAJ100A
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JCET Group | SMAG series glass passivated plastic-encapsulated diodes, 400W peak pulse power, 10V to 100V reverse standoff voltage, available in uni-directional and bi-directional configurations with low clamping voltage and high surge current capability.SMAG series glass passivated plastic-encapsulated diodes with 400W peak pulse power, 10V to 100V working voltage range, and low clamping voltage for transient voltage suppression in surface mount applications.SMAG series glass passivated plastic-encapsulated diodes with 400W peak pulse power, 10V to 100V reverse standoff voltage, and unidirectional or bidirectional configurations for transient voltage suppression. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMCJ300A
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Microdiode Semiconductor (MDD) | Surface mounted, low profile, built-in strain relief, glass passivated, low inductance, 1500W peak pulse, 10/1000μs, 5.0-440V, 260°C/10s, UL 94V-0. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JSPC20100ACT
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Jiangsu JieJie Microelectronics Co Ltd | 20A Schottky Barrier Rectifier with 100V maximum repetitive peak reverse voltage, low forward voltage drop, high current and surge capability, TO-220AB package, lead-free compliant. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SK3200AF
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SUNMATE electronic Co., LTD | Surface mount Schottky barrier diode SK3150AF-SK3200AF with 150-200V repetitive peak reverse voltage, 3.0A average forward current, low forward voltage drop, high surge current capability, and operating junction temperature up to 150°C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBFJ100A
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SUNMATE electronic Co., LTD | Surface mount transient voltage suppressor diode in SMBF package, 600W peak pulse power, 5.0V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.Surface mount transient voltage suppressor diode in SMBF package with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and plastic UL 94V-0 rated package.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, glass passivated die, and fast response for surge protection in unidirectional and bidirectional configurations.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode in SMBF package with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, and UL 94V-0 rated plastic housing. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SK5200AF
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SUNMATE electronic Co., LTD | Surface mount Schottky barrier diode in SMAF case, rated for 150-200V repetitive peak reverse voltage, 5.0A average forward current, with low forward voltage drop and high efficiency for low voltage applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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P6KE400A
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Microdiode Semiconductor (MDD) | Glass passivated junction, 6.8-440V breakdown voltage, 600W peak pulse power, fast response <1.0ps/5.0ns, DO-15 case, solderable terminals. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBJ400A
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Leiditech | 600W peak pulse power Transient Voltage Suppressor (TVS) diode in SMB package, designed for surface mount applications with low inductance, fast response time less than 1.0ps, and glass passivated junction for reliable transient protection.600W peak pulse power SMBJ Series transient voltage suppressor with low profile surface mount package, fast response time, excellent clamping capability, and 10/1000 μs waveform rating for use in consumer, automotive, and industrial applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMDJ200A
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Leiditech | SMDJ Series 3000W Transient Voltage Suppressor diodes offer high peak pulse power capability, low clamping voltage, fast response time, and are designed for surface mount applications with unidirectional and bidirectional options. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS40200AP
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VANGUARD | 40V/50A N-Channel Advanced Power MOSFET with 3.3 mΩ typical RDS(on) at VGS=10V, 118A silicon-limited current, PDFN5x6 package, and 100% avalanche tested for high efficiency power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBJ300A
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Microdiode Semiconductor (MDD) | Trans Voltage Suppressor Diode, 600W, 300V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMDJ100A
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Microdiode Semiconductor (MDD) | Surface mounted, low profile, 3000W peak pulse, fast response, IR <1μA above 10V, 260°C/10s soldering, 94V-0, 5.0-170V stand-off. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMAJ300A
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Microdiode Semiconductor (MDD) | SMD, 400W peak, 10/1000μs, 5.0-440V, fast, glass passivated, 260°C/10s, DO-214AC/SMA, 0.07g. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JSPE10200ACT
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Jiangsu JieJie Microelectronics Co Ltd | 10A Schottky Barrier Rectifier in TO-263 surface mount package with 200V maximum repetitive peak reverse voltage, low forward voltage drop, and lead-free compliant with EU RoHS. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CJK3400A
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JCET Group | N-channel enhancement mode MOSFET in SOT-23-3L package with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 32mΩ at 10V VGS. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S1032-F-20.0A
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SATE | Surface mount fast-acting fuse in 1032 size, rated from 20A to 60A, with voltage ratings up to 100VDC, low cold resistance down to 0.88 mOhms, and high interrupting capacity, suitable for high-current applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CJ3400A
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JCET Group | N-channel enhancement mode MOSFET in SOT-23 package with 30 V drain-source voltage, 5.8 A continuous drain current, and low on-resistance of 32 mΩ at 10 V gate-source voltage. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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P4SMA100A
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Jiangsu JieJie Microelectronics Co Ltd | 400W P4SMA series TVS diodes offer low profile surface mount packaging, 400W peak pulse power at 10/1000 us, fast response time under 1ps, and clamping voltages from 10.5V to 760V, suitable for transient voltage protection in various electronic applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Cree, Inc. XFL03K-H0-0000-0A000A0E3XLAMP XFL03K GEN 1 LIGHT EMITTIN |
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Cree, Inc. XFL03K-H0-0000-0A000A0E2XLAMP XFL03K GEN 1 LIGHT EMITTIN |
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Cree, Inc. XFL03K-00-0000-0A000A0E2XLAMP XFL03K GEN 1 LIGHT EMITTIN |
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Siemens 3SU19000AG100AA0LABEL HOLDER, 12.5 X 27MM,ROUNDE |
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