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E401
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Unknown
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Semiconductor Master Cross Reference Guide |
Scan |
PDF
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118.81KB |
1 |
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E401
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Unknown
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Basic Transistor and Cross Reference Specification |
Scan |
PDF
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45.6KB |
1 |
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E401
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Unknown
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Shortform Datasheet & Cross References Data |
Short Form |
PDF
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83.4KB |
1 |
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E40107
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ifm efector
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SCREW-IN ADAPTER FOR PROCESS SEN |
Original |
PDF
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132.86KB |
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E401 KIT
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Microchip Technology
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Development Boards, Kits, Programmers - Evaluation Boards - Sensors - KIT EVAL FOR QT401-IS QSLIDE |
Original |
PDF
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657.24KB |
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E401 KIT
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Quantum Research Group
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Evaluation Boards - Sensors, Programmers, Development Systems, KIT EVAL FOR QT401-IS QSLIDE |
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PDF
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16 |
2SC2073(RANGE:40-140)
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JCET Group
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NPN transistor in TO-220-3L package with 150 V collector-base and collector-emitter voltage, 1.5 A continuous collector current, 1.5 W power dissipation, and 40 to 140 DC current gain. |
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GSE-401M
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SUNMATE electronic Co., LTD
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Axial leaded glass tube GSE-141N to GSE-501M series gas discharge tube with DC spark-over voltage from 140V to 500V, insulation resistance >1000MΩ, capacitance ≤1pF, and 8/20μs surge current capacity up to 1000A. |
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2SA940(RANGE:40-140)
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JCET Group
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PNP transistor in TO-220-3L package with -150 V collector-base and collector-emitter voltage, -1.5 A continuous collector current, 1.5 W power dissipation, and DC current gain ranging from 40 to 140. |
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PDF
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NCE4012S
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NCEPOWER
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NCE4012S N-Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 12A continuous drain current, and low on-resistance of 8.4mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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PDF
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NCE4015S
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NCEPOWER
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NCE4015S is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 15A continuous drain current, and low on-state resistance of 6.1mΩ typical at 10V gate-source voltage, using advanced trench technology for high efficiency in switching applications. |
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2SC2073(RANGE:40-140)
