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CE60.6100.151
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SCHURTER
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POWER ENTRY MODULE FILTERED 250 125VAC 10A MALE 3POS FUSE |
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240.81KB |
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CE60.6100.151
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SCHURTER
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Power Entry Connectors - Inlets, Outlets, Modules - Filtered, Connectors, Interconnects, MOD PWR STD FILTER 10A 2POLE PNL |
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CE60.6100.151
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SCHURTER
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Casing with Standard RFI Filter, 2-pole fusing, 10A |
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137.22KB |
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CE60U
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ADAM Tech
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Connector: Board to Board Connector: F: 60: 2.54: THRU |
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718.03KB |
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CE60U30
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ADAM Tech
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Connector: Board to Board Connector: F: 60: 2.54: THRU |
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718.03KB |
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CE60URC
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ADAM Tech
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Connector: Board to Board Connector: F: 60: 2.54: THRU |
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718.03KB |
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NCE6003X
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NCEPOWER
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NCE6003X is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-state resistance of less than 90mΩ at VGS=10V, suitable for battery protection and switching applications. |
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NCE6020AQ
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NCEPOWER
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NCE6020AQ is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 20A continuous drain current, RDS(ON) less than 23mΩ at VGS=10V, and low gate charge, suitable for high-frequency switching applications. |
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NCE60P10K
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NCEPOWER
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P-Channel enhancement mode power MOSFET with -60V drain-source voltage, -10A continuous drain current, and RDS(ON) less than 120mΩ at VGS=-10V, suitable for load switch and PWM applications. |
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NCE6020A
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NCEPOWER
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NCE6020A is a Pb-free N-channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of 25mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. |
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NCE60TD120UT
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NCEPOWER
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1200V, 60A Trench FSII Fast IGBT in TO-247 package featuring low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for reliable performance in UPS and power applications. |
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NCE6008AS
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NCEPOWER
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60V, 8A NCE6008AS enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 13.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, suitable for power switching and load switch applications in SOP-8 package. |
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NCE60P03R
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NCEPOWER
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NCE60P03R is a -60V, -3A P-channel MOSFET with low RDS(ON) of 170mΩ at VGS=-10V, advanced trench technology, and high-density cell design for load switch and PWM applications in SOT-223-3L package. |
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NCE60P45AK
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -45A continuous drain current, 35mΩ RDS(ON) at VGS=-10V, and low gate charge, suitable for power switching and high-frequency applications. |
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NCE6045XG
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NCEPOWER
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NCE6045XG is a 60V, 45A N-channel enhancement mode power MOSFET in DFN5x6-8L package, featuring 7.4mΩ typical RDS(ON) at VGS=10V, advanced trench technology, low gate charge, and 150°C operating temperature. |
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NCE60P05R
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -5A continuous drain current, RDS(ON) less than 65mΩ at VGS=-10V, low gate charge, suitable for load switch and PWM applications. |
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NCE60P28AK
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -28A continuous drain current, and low RDS(ON) of 48mΩ at VGS=-10V, suitable for high current load applications. |
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NCE6080EK
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NCEPOWER
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NCE6080EK is a channel enhancement mode power MOSFET with 60V drain-source voltage, 80A continuous drain current, on-state resistance less than 6.9mΩ at 10V gate-source voltage, and advanced trench technology for low gate charge and high efficiency. |
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NCE6080A
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NCEPOWER
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NCE6080A is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.5mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance in TO-220-3L package. |
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NCE6003
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NCEPOWER
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NCE6003 is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 105mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications. |
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NCE6003X
