RB521S-40
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode RB521S-20 with 20V reverse voltage, 1.0A average rectified current, 0.38V forward voltage at 1.0A, and low power loss for high efficiency in low voltage applications. |
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RB521S
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AK Semiconductor
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Schottky barrier diode in SOD-523 surface mount package with 30 V peak reverse voltage, 200 mA average rectified current, low forward voltage drop of 0.5 V at 200 mA, and RoHS compliant matte tin lead finish. |
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RB521S-40
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JCET Group
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SOD-523 Schottky barrier diode with 40 V peak repetitive reverse voltage, 200 mA average rectified current, low forward voltage, and ultra-small plastic package for surface mounting. |
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RB521S-30
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode RB521S-20 to RB521S-40 with 1.0 A average rectified current, 20 to 40 V DC blocking voltage, 0.38 to 0.40 V forward voltage at 1.0 A, and operating junction temperature from -65 to +125 °C. |
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RB521S-30
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SLKOR
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Low VF, small SMD. Low current, high speed. VR 30V, IO 200mA, IFSM 1A, Tj 125°C, Tstg -40 to +125°C. VF 0.50V, IR 30μA. |
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RB521S-30
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JCET Group
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Schottky barrier diode in SOD-523 plastic package, with 30 V DC reverse voltage, 200 mA mean rectifying current, low forward voltage of 0.5 V at 200 mA, and reverse current of 30 uA at 10 V. |
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CSB3D521S-40
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CREATEK Microelectronics
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Schottky Barrier Diode in SOD-323 package with 30 V DC reverse voltage, 200 mA mean rectifying current, low forward voltage of 0.50 V at 200 mA, and reverse leakage current of 100 uA at 20 V. |
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RB521S-30
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-523 package with 30 V reverse voltage, 200 mA mean rectifying current, low forward voltage of 0.5 V at 200 mA, and 150 mW power dissipation. |
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RB521S-20
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode RB521S-20 with 20V reverse voltage, 1.0A average rectified current, 0.38V forward voltage at 1.0A, and low power loss design for high efficiency in low voltage applications.Surface mount Schottky barrier diode RB521S-20 with 20V reverse voltage, 1.0A average rectified current, 0.38V forward voltage at 1.0A, and low power loss for high efficiency in low voltage applications.Surface mount Schottky barrier diode RB521S-20 to RB521S-40 with 1.0 A average rectified current, 20 to 40 V DC blocking voltage, 0.38 to 0.40 V forward voltage at 1.0 A, and operating junction temperature from -65 to +125 °C. |
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RB521S-30
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Shikues Semiconductor
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SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low current rectification and high speed switching applications. |
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RB521S-40
