|
4N60
|
|
Unisonic Technologies
|
4 Amps, 600 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
|
152.32KB |
8 |
|
4N600
|
|
Unknown
|
N-Channel Field Effect Transistor |
Original |
PDF
|
35.63KB |
2 |
|
4N600(3600)
|
|
Bay Linear
|
N-Channel Field Effect Transistor |
Original |
PDF
|
35.65KB |
2 |
|
4N600S
|
|
Bay Linear
|
600V 4.0A N-channel field effect transistor |
Original |
PDF
|
35.65KB |
2 |
|
4N600T
|
|
Bay Linear
|
600V 4.0A N-channel field effect transistor |
Original |
PDF
|
35.65KB |
2 |
|
4N60L-TA3-T
|
|
Unisonic Technologies
|
4 Amps, 600 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
|
152.32KB |
8 |
|
4N60-TA3-T
|
|
Unisonic Technologies
|
4 Amps, 600 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
|
152.31KB |
8 |
|
4N60-TF3-T
|
|
Unisonic Technologies
|
4 Amps, 600 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
|
152.32KB |
8 |
4N60
|
|
Shenzhen Heketai Electronics Co Ltd
|
N-channel high-voltage MOSFET in TO-252 package with 600 V drain-source voltage, 2.5 ohm on-resistance at 10 V gate drive, typical gate charge of 15 nC, and 8 pF reverse transfer capacitance. |
Original |
PDF
|
|
|
|
4N60A
|
|
AK Semiconductor
|
4A 600V N-channel enhancement mode MOSFET with typical on-resistance of 2.1 ohms at VGS = 10V, available in TO-220AB, TO-220F, TO-263, TO-251, and TO-252 packages, featuring low gate charge and high dv/dt capability. |
Original |
PDF
|
|
|
|
AKZE4N60
|
|
AK Semiconductor
|
N-Channel 600V MOSFET with 2.2 ohm RDS(on) at 10V VGS, 39nC gate charge, TO-252 package, designed for high-frequency switching applications with low input capacitance and avalanche energy rating. |
Original |
PDF
|
|
|
|
CWS24N60AF
|
|
Wuhan Xinyuan Semiconductor Co Ltd
|
600V N-Channel Super Junction MOSFET CWS24N60A with 150 mOhm RDS(on) and 24A continuous drain current, designed for high-efficiency power applications including PFC, SMPS, UPS, adapters, and LED lighting. |
Original |
PDF
|
|
|
|
JMPF4N60BJ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for fast switching, PWM applications, and power management in a TO-220FP-3L package. |
Original |
PDF
|
|
|
|
JMPC4N60BJ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management in a TO-220C-3L package. |
Original |
PDF
|
|
|
|
|
|
JMPK4N60BJ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
600V, 4A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management. |
Original |
PDF
|
|
|
|
CWS24N60AZ
|
|
Wuhan Xinyuan Semiconductor Co Ltd
|
600V N-Channel Super Junction MOSFET CWS24N60A with 150 mOhm RDS(on) and 24A continuous drain current, designed for high-efficiency power applications including PFC, SMPS, UPS, adapters, and LED lighting. |
Original |
PDF
|
|
|
4N60
