4742AB10109600 |
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Laird Technologies
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RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK NICU PTAF TPE NR DSH |
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20 |
4742AB51K00075 |
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Laird Technologies
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RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK NICU NRS PU V0 DSH |
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20 |
4742AB51K00190 |
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Laird Technologies
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RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK NICU NRS PU V0 DSH |
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20 |
4742AB51K00220 |
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Laird Technologies
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RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK NICU NRS PU V0 DSH |
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20 |
4742AB51K01400 |
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Laird Technologies
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RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK NICU NRS PU V0 DSH |
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20 |
4742AB51K01800 |
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Laird Technologies
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RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK NICU NRS PU V0 DSH |
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20 |
4742AB51K04000 |
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Laird Technologies
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RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK NICU NRS PU V0 DSH |
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20 |
4742AB51K09600 |
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Laird Technologies
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RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK,NICU,NRS,PU,V0,DSH |
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117 |
4742AC51K00680 |
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Laird Technologies
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RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, GK NICU NRS PU V0 DSH |
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20 |
ZM4742A |
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SLKOR
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Stabilizing/clipping circuits, Zener voltage tolerance ±10%, ±5% with ""A"", ±2% with ""B"". DO-41 case, Ptot 1 W, Tj 175°C, Tstg -65 to +175°C. |
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1SMA4742A |
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Microdiode Semiconductor
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3.3-330V, 1.0W, SMD, glass passivated, low inductance, IR <5.0μA, 260°C/10s, UL 94V-0, DO-214AC, 0.055g, 12mm tape. |
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1SMAF4742A |
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Microdiode Semiconductor
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Surface mount, 3.3-330V, 1.0W peak, SMAF, solder plated, polarity marked, 0.07g. |
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1SMAF4742A |
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Shikues Semiconductor
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1W, 3.3V-330V, SMAF, 27mg, surface mount. |
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1SMA4742AG |
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Shikues Semiconductor
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Max. 1W, 3.3V-330V, SMA case, 0.055g, solderable terminals. |
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