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3N50
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Germanium Power Devices
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Germanium Power Transistors |
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366.05KB |
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3N50
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Motorola
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Motorola Semiconductor Datasheet Library |
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65.89KB |
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3N50
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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29.97KB |
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3N50
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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29.97KB |
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3N50
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Unknown
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Shortform Transistor PDF Datasheet |
Short Form |
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153.39KB |
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3N50
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Semitron
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Germanium Power Transistors |
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777.02KB |
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3N50
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Solidev Semiconductors
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Solid State Products (Transistor Guide) |
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92.87KB |
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13N50A
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AK Semiconductor
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13N50A N-channel enhancement mode MOSFET with 500V drain-source voltage, 13A continuous drain current, 0.35 ohm typical on-resistance at 10V gate-source voltage, and TO-220F or TO-220C package. |
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JMPF13N50BJ
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Jiangsu JieJie Microelectronics Co Ltd
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500V, 13A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. |
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SLT13N50A
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Maplesemi
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500V N-Channel MOSFET with 13A continuous drain current, 0.52 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and TO-252 package for high efficiency power applications. |
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SLF13N50C
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Maplesemi
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SLP13N50C and SLF13N50C are 500V, 13A N-channel MOSFETs with a typical RDS(on) of 386 mΩ at VGS = 10V, low gate charge of 44nC, and high avalanche energy endurance, suitable for high-efficiency power conversion applications. |
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SLP_F13N50A
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Maplesemi
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500V N-Channel MOSFET with 13A continuous drain current, 0.42 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. |
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SLF13N50U
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Maplesemi
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500V N-Channel MOSFET with 13A continuous drain current, 0.40 ohm typical RDS(on) at VGS = 10V, low gate charge of 35nC, and fast switching performance suitable for high-efficiency power applications. |
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MDD13N50F
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Microdiode Semiconductor
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500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 13A, RDS(on),max 0.52Ω@VGS=10V, Qg,typ 37nC, TO-220F-3L. |
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JMPC13N50BJ
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Jiangsu JieJie Microelectronics Co Ltd
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500V, 13A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, suitable for load switching, PWM, and power management applications. |
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SL13N50FS
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SLKOR
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SLF13N50A
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Maplesemi
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500V N-Channel MOSFET with 13A continuous drain current, 0.42 ohm RDS(on) at VGS = 10V, low gate charge of 19.1nC, and 4.6pF Crss, suitable for high efficiency power conversion applications. |
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13N50A
