/20N50 Search Results
/20N50 Datasheets (12)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 20N50 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50E1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50E1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
20N50A
|
AK Semiconductor | 20A500V N-channel enhancement mode MOSFET with 20A continuous drain current, 500V drain-source voltage, 0.21 ohm typical on-resistance at 10V gate-source voltage, and low gate charge, available in TO-220F, TO-247, and TO-247S packages. | Original | ||||
SLP_F20N50S
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Maplesemi | 20A, 500V N-channel MOSFET with 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 37W power dissipation in TO-220 package. | Original | ||||
SLF20N50C
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Maplesemi | 500V N-channel MOSFET with 20A continuous drain current, 200mΩ typical RDS(on) at VGS=10V, low gate charge of 90nC, and 33pF Crss, suitable for high-efficiency switching power conversion applications. | Original | ||||
SLF20N50S
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Maplesemi | 500V N-channel MOSFET with 20A continuous drain current, 185mΩ typical RDS(on) at VGS = 10V, low gate charge of 40nC, and fast switching performance for high-efficiency power applications. | Original | ||||
SLH_W20N50S
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Maplesemi | 500V N-Channel MOSFET with 20A continuous drain current, 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 250W power dissipation capability in TO-247 or TO-3P package. | Original | ||||
MDD20N50F
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Microdiode Semiconductor (MDD) | 500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 20A, RDS(on),max 0.29Ω@VGS=10V, Qg,typ 50.5nC, TO-220F-3L. | Original |
/20N50 Price and Stock
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Cal-Chip Electronics CHV2220N500684KXTCAP CER 0.68UF 500V X7R 2220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CHV2220N500684KXT | Tape & Reel | 8,500 | 500 |
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| CHV2220N500684KXT | Digi-Reel | 428 | 1 |
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| CHV2220N500684KXT | Cut Tape | 428 | 1 |
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onsemi FDB20N50FMOSFET N-CH 500V 20A D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB20N50F | Cut Tape | 7,422 | 1 |
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| FDB20N50F | Digi-Reel | 7,422 | 1 |
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| FDB20N50F | Tape & Reel | 7,200 | 800 |
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FDB20N50F | Tape & Reel | 13 Weeks | 800 |
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FDB20N50F | 4,226 |
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FDB20N50F | Cut Tape | 121 | 1 |
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FDB20N50F | 252 | 1 |
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FDB20N50F | 800 |
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Get Quote | |||||||
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FDB20N50F | 13 Weeks | 800 |
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FDB20N50F | 1,600 | 14 Weeks | 800 |
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FDB20N50F | 15 Weeks | 800 |
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Cal-Chip Electronics CHV2220N500224KXTCAP CER 0.22UF 500V X7R 2220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CHV2220N500224KXT | Tape & Reel | 2,000 | 1,000 |
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TTM Technologies C20N50Z4RF ATTENUATOR 50OHM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C20N50Z4 | Cut Tape | 1,450 | 1 |
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| C20N50Z4 | Digi-Reel | 1,450 | 1 |
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| C20N50Z4 | Tape & Reel | 1,000 | 1,000 |
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C20N50Z4 | 365 |
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C20N50Z4 | 1,000 |
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C20N50Z4 | 8 Weeks | 1,000 |
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Rochester Electronics LLC HGTH20N50EID20A, 500V, N CHANNEL IGBT WITH A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HGTH20N50EID | Bulk | 1,433 | 77 |
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