|
180-D-D-4-P-10-F-102-R-B
|
|
Vishay
|
Resistor: POT: 1K: 20%: 9.5: Thru-Hole |
Original |
PDF
|
102.36KB |
2 |
|
180-D-D-4-P-10-F-102-R-P
|
|
Vishay
|
Resistor: POT: 1K: 20%: 9.5: Thru-Hole |
Original |
PDF
|
102.36KB |
2 |
|
180-D-D-4-P-10-F-102-S-B
|
|
Vishay
|
Resistor: POT: 1K: 20%: 9.5: Thru-Hole |
Original |
PDF
|
102.36KB |
2 |
|
180-D-D-4-P-10-F-102-S-P
|
|
Vishay
|
Resistor: POT: 1K: 20%: 9.5: Thru-Hole |
Original |
PDF
|
102.36KB |
2 |
|
180-D-D-4-P-10-F-103-R-B
|
|
Vishay
|
Resistor: POT: 10K: 20%: 9.5: Thru-Hole |
Original |
PDF
|
102.36KB |
2 |
|
180-D-D-4-P-10-F-103-R-P
|
|
Vishay
|
Resistor: POT: 10K: 20%: 9.5: Thru-Hole |
Original |
PDF
|
102.36KB |
2 |
AK70T180D
|
|
AK Semiconductor
|
N-Channel Super Junction Power MOSFET with 700 V drain-source voltage, 180 mOhm RDS(ON), 21 A continuous drain current, available in TO-220, TO-220F, and TO-263 packages. |
Original |
PDF
|
|
|
|
2EZ180D5L
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6V to 200V zener voltage range, low leakage current, and ±5% tolerance option. |
Original |
PDF
|
|
|
|
AK65T180D
|
|
AK Semiconductor
|
N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 180 mΩ maximum on-resistance, 21 A continuous drain current, low gate charge, and TO-220, TO-220F, or TO-263 package options. |
Original |
PDF
|
|
|
|
3EZ180D5L
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon zener diode with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon Zener diode 3EZ3.9D5L to 3EZ400D5L with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package. |
Original |
PDF
|
|
|
|
ETA5055V180DD1E
|
|
eta SEMICONDUCTOR
|
Ultra-high PSRR, ultra-low Iq LDO voltage regulator with 500mA output current, 4.5uA quiescent current, and 102dB PSRR at 1.2V output, available in DFN1x1-4, DFN2x2-6, SOT23-5, and CSP-4 packages. |
Original |
PDF
|
|
|
|
3EZ180D5
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance indicated by suffix 5. |
Original |
PDF
|
|
|
|
ETA5055V180DS2F
|
|
eta SEMICONDUCTOR
|
Ultra-low Iq, 500mA LDO with 102dB PSRR, 4.5uA quiescent current, and low dropout voltage in DFN, SOT23, and CSP packages for RF and analog applications. |
Original |
PDF
|
|
|
|
NCE65T180D
|
|
NCEPOWER
|
N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 21 A continuous drain current, 190 mΩ maximum RDS(ON), low gate charge, and TO-220/TO-263/TO-220F package options. |
Original |
PDF
|
|
|
|
|
|
CTP01110-180D
|
|
JWD
|
SMT Current Sense Transformer CTEP1110-XXXD EP10 SMD Platform-Series supports up to 30 A primary current, operates from 25 kHz to 250 kHz, features low primary resistance, -40 ℃ to 125 ℃ operating temperature, and 3000 Vrms isolation. |
Original |
PDF
|
|
|
|
2EZ180D5
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon Zener diode in DO-41 package, 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, high reliability, suitable for single-phase half-wave applications at 60Hz.Axial leaded silicon Zener diode in DO-41 package with 2.0W power dissipation, 3.6 to 200V voltage range, color band indicating cathode, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-41 package with 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-41 package, 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, with color band indicating cathode, suitable for single-phase half-wave applications at 60Hz.Axial leaded silicon Zener diode in DO-41 package, 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, high reliability, suitable for single-phase half-wave applications at 60Hz.Axial leaded silicon Zener diode in DO-41 package with 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-41 package, 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, with color band indicating cathode, suitable for single-phase half-wave applications at 60Hz.Axial leaded silicon Zener diode in DO-41 package, 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, with color band indicating cathode, suitable for single-phase half-wave applications at 60Hz.Axial leaded silicon Zener diode in DO-41 package, 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, with color band indicating cathode, operating junction temperature from -55 to +175°C. |
Original |
PDF
|
|
|
AK70T180D
