VSP002N03MS-G
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VANGUARD
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30V/150A N-Channel Advanced Power MOSFET with RDS(on) of 2.3 mΩ at VGS=10V, available in PDFN5x6 package, featuring low on-resistance and 100% avalanche testing capability. |
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VSE002N03MS-G
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VANGUARD
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30V/155A N-Channel Advanced Power MOSFET with RDS(on) of 1.4 mΩ at VGS=10V, 2.2 mΩ at VGS=4.5V, available in PDFN3333 package, featuring high efficiency, fast switching, and low on-resistance. |
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JMSH1002NS
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 274A, 3.2mΩ N-channel Power SGT MOSFET in TO-247-3L package with low gate charge, excellent RDS(ON), and 100% UIS tested for power management and load switch applications. |
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JMSH1002NE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel power MOSFET with 2.2 mΩ RDS(ON) at 10V VGS, 284A continuous drain current, available in TO-220-3L and TO-263-3L packages, featuring low gate charge and ultra-low on-resistance. |
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JMSH1002NTL
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Jiangsu JieJie Microelectronics Co Ltd
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100V 2.0mΩ N-channel Power MOSFET in PowerJE10x12 package with 337A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power tools, e-vehicles, robotics, and power management applications. |
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VSP002N03MST-G
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VANGUARD
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30V/150A N-Channel Power MOSFET with 1.3 mΩ RDS(on) at VGS=10V, 2.0 mΩ at VGS=4.5V, 163A ID silicon-limited, PDFN5x6 package, 100% avalanche tested, suitable for high-efficiency switching applications. |
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JMSH1002NC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 2.2 mΩ RDS(ON) at 10V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high continuous drain current of 284A, and junction temperature range from -55°C to 150°C. |
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VSP002N03MS
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VANGUARD
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30V/100A N-Channel Advanced Power MOSFET with 0.8 mΩ RDS(on) at VGS=10V, available in PDFN5x6 package, offering high current capability and low thermal resistance for efficient power management applications. |
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VSP002N03MS-G
