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06-T001
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NTE Electronics
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TNC CRIMP PLUG FOR RG-59/62 CABL |
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34.53KB |
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06-T002
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NTE Electronics
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TNC CRIMP PLUG FOR RG-58/58A/141 |
Original |
PDF
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32.45KB |
1 |
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06-T004
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NTE Electronics
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TNC REVERSE POLARITY CRIMP PLUG |
Original |
PDF
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32.61KB |
1 |
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06-T005
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NTE Electronics
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TNC PLUG TO JACK R/A ADAPTER |
Original |
PDF
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30.36KB |
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06TDPS6
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Delta Electronics
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Filters - Power Line Filter Modules - LINE FILTER 6A CHASSIS MOUNT |
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690.82KB |
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06TDPS6(D)
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Delta Electronics
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Filters - Power Line Filter Modules - LINE FILTER 6A DIN RAIL |
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690.82KB |
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06T-JWPF-VSLE-D
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JST Manufacturing
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Cconnector HOUSING TAB JWPF 6POS 2MM |
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454.72KB |
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SLF80P06T
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Maplesemi
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P-Channel MOSFET SLF80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, TO-220F package, suitable for power management and load switching applications. |
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JECR7506TL
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Jiangsu JieJie Microelectronics Co Ltd
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EPI hyperfast soft recovery rectifier in TOLL package with 600V maximum repetitive peak reverse voltage, 75A average forward current, low reverse leakage, and hyperfast recovery time for applications in UPS, EV chargers, welding machines, and air conditioners. |
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SLM50N06T
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Maplesemi
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60V N-Channel MOSFET with 50A continuous drain current, 14.8mΩ typical RDS(on) at VGS = 10V, low gate charge of 27.2nC, and 100% avalanche tested for high ruggedness and fast switching performance. |
Original |
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SLD05P06T
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Maplesemi
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P-Channel 60V -5A MOSFET with RDS(on) of 82mΩ at VGS = -10V, featuring low on-resistance, fast switching, and 100% avalanche tested performance in a TO-252 package. |
Original |
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SDA06T1
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Leiditech
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SDA06T1 unidirectional TVS diode with 5V operating voltage, ultra low leakage in nA range, SOD-523 package, 200W peak pulse power (8/20 µs), and ±15kV ESD protection per IEC 61000-4-2. |
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SL3906T
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SLKOR
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Original |
PDF
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SLB80N06T
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Maplesemi
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N-channel MOSFET, 60V, 80A continuous drain current, 6.5 mΩ typical RDS(on) at 10V VGS, TO-263 package, designed for high-efficiency power switching applications with low gate charge and fast switching performance. |
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SLD50P06T
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Maplesemi
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P-Channel 60V -50A Power MOSFET with RDSon typ 25mΩ at VGS -10V produced using advanced TRENCH technology for low onresistance fast switching and high energy pulse handling in avalanche and commutation modes |
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SLP80N06T
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Maplesemi
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N-channel 60V 80A MOSFET with typical RDS(on) of 6.5 mΩ at VGS = 10V, designed for high-efficiency power management, load switching, and PWM applications. |
Original |
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SLD50L06T
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Maplesemi
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N-Channel and P-Channel Enhancement Mode MOSFET with 60V, 30A and -60V, -50A ratings, low on-resistance of 13.8mΩ and 19.5mΩ respectively, designed for battery protection, load switching, and power management applications. |
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MMBT3906T
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SLKOR
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Original |
PDF
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RSR020N06TL
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VBsemi Electronics Co Ltd
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N-Channel 60-V MOSFET in SOT23 package with RDS(on) of 85 mOhm at VGS = 10 V, continuous drain current of 4 A, and low gate charge of 2.1 nC, suitable for battery switches and DC/DC converters. |
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SMF12M1FR006T
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SATE
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SMF Series current sensing resistor, metal foil type, chip sizes 0603 to 2512, resistance range 2 mΩ to 200 mΩ, low TCR, lead-free, RoHS compliant, suitable for high precision current sensing applications. |
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SLF80P06T
