"VLSI TECHNOLOGY" ABSTRACT Search Results

PT6045

Abstract: VSC370 PT6005
Contextual Info: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology

PT6042

Contextual Info: V L S I TECHNOLOGY I NC H7E J> T3flfl347 D a 0 ñ ñ 2 2 7 V L S I Tech n o lo gy , in c . - r - m PRELIMINARY VTI - m VSC450 SERIES O.8-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon

PT6042

Abstract: PT6045 VSC350 PT6005 nd02d2
Contextual Info: V L S I TECHNOLOGY INC 47 E D =1350347 0 0 0 0 0 3 0 VTI V L S I Technology , in c VSC350 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Fast design turn-around time with COMPASS Design Automation’s advanced design tools and methodology

integrated circuit TL 2262

Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
Contextual Info: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology

"RF MOSFETs"

Abstract: "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type
Contextual Info: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the

"RF MOSFETs"

Abstract: n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note
Contextual Info: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the

Contextual Info: MOTOROLA Order Number: AN1405/D SEMICONDUCTOR TECHNICAL DATA Rev 1, 09/2001 AN1405 ECL Clock Distribution Techniques Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design using ECL logic technologies for reducing system clock skew

Contextual Info: MOTOROLA Order Number: AN1405/D SEMICONDUCTOR TECHNICAL DATA Rev 1, 09/2001 AN1405 ECL Clock Distribution Techniques Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design using ECL logic technologies for reducing system clock skew

Contextual Info: Freescale Semiconductor, Inc. Order number: AN1405 Rev 1, 09/2001 APPLICATION NOTE AN1405 ECL Clock Distribution Techniques By: Todd Pearson ECL Applications Engineering ABSTRACT This application note provides information on system design using ECL logic technologies for reducing system clock skew

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order Number: AN1405/D SEMICONDUCTOR TECHNICAL DATA Rev 1, 09/2001 AN1405 ECL Clock Distribution Techniques Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design

MC10E111

Abstract: MPC973 10H645 AN1405 E211
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order Number: AN1405/D Rev 1, 09/2001 ECL Clock Distribution Techniques AN1405 Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design

Contextual Info: 1990 Optical Society of America This paper was published in Optics Letters and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website:

DUSLIC

Abstract: code for echo SICOFI-4 c2ku
Contextual Info: Integrated Digital Line CODEC Architectures: A Tutorial Review Manish Bhardwaj Telecom Devices Signal Processing and Control Division Microelectronics Design Center Infineon Asia Pacific 168 Kallang Way Singapore 349253. e-mail: manish.bhardwaj@infineon.com

flash "high temperature data retention" mechanism

Abstract: Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374
Contextual Info: SuperFlash Memory Program/Erase Endurance Viktor Markov, Xian Liu, Alexander Kotov, Amitay Levi, Tho Ngoc Dang, and Yuri Tkachev Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, E-mail: akotov@sst.com Abstract––Program/erase endurance data for SuperFlash

tunnel diodes

Abstract: 1E-18 injector tunnel detector ed 39
Contextual Info: Tunneling Phenomenon in SuperFlashâ Cell A.Kotov, A.Levi, Yu.Tkachev, and V.Markov Silicon Storage Technology Inc., 1171 Sonora Court, Sunnyvale, CA 94086, Tel. 408 522-7350, akotov@sst.com Abstract––An extensive investigation of interpoly oxide conduction (erase) mechanism for SuperFlash cell is

16 point DFT butterfly graph

Abstract: radix-2 DIT FFT C code modified booth circuit diagram radix-2 4 bit modified booth multipliers radix-2 fft xilinx 16 point Fast Fourier Transform radix-2 BUTTERFLY DSP applications for modified booth algorithm FPGA DIF FFT using radix 4 fft
Contextual Info: The 8th International Conference on Signal Processing Applications and Technology, Toronto Canada, September 13-16 1998. Computing Multidimensional DFTs Using Xilinx FPGAs Chris Dick chrisd@xilinx.com Xilinx Inc. 2100 Logic Drive San Jose CA 95124 Abstract: This paper reports on a reconfigurable

"vlsi technology" abstract for

Abstract: TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR
Contextual Info: A New Complementary Bipolar Process featuring a Very High Speed PNP. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas and A J Manson. Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Abstract This paper introduces "Process HJ" a

bit-slice

Contextual Info: Challenges of CAD Development for Datapath Design Tim Chan, Design Technology, Intel Corp. Amit Chowdhary, Design Technology, Intel Corp. Bharat Krishna, Design Technology, Intel Corp. Artour Levin, Design Technology, Intel Corp. Gary Meeker, Design Technology, Intel Corp.

TMS320C6xx

Abstract: SN74LVCH245 SN74ABT SN74AHC245 SN74LVC TMS320C6201 ABTH245 SCLA015 RESISTOR NETWORK matched
Contextual Info: Application Report SCLA015 - February 2001 Bus-Hold Circuit Eilhard Haseloff Standard Linear & Logic ABSTRACT When designing systems that include CMOS devices, designers must pay special attention to the operating condition in which all of the bus drivers are in an inactive, high-impedance

ICCAD-94

Abstract: bit-slice Signal Path Designer
Contextual Info: Circuit Design Environment and Layout Planning Bharat Krishna, NIKE-SC/Design Technology, Intel Corp. Gil Kleinfeld, NIKE-HF/Design Technology, Intel Corp. Index words: circuit design, layout planning Abstract Circuit design in deep sub-micron technologies requires

"vlsi technology" abstract

Abstract: "vlsi technology" abstract for split-gate flash
Contextual Info: Endurance Characteristics of SuperFlash Memory Xian Liu*, Viktor Markov, Alexander Kotov, Tho Ngoc Dang, Amitay Levi Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, USA Ian Yue, Andy Wang, and Rodger Qian SST China, Ltd., Bldg. 24, No.115, Lane 572, Bibo Road, Zhangjiang Hi-Tech Park, Shanghai, 201203, P.R. China

USE OF TRANSISTOR

Abstract: Marquardt Switches transistor model list
Contextual Info: Transistor Abstraction for the Functional Verification of FPGAs Guy Dupenloup, Thierry Lemeunier, Roland Mayr Altera Corporation 101 Innovation Drive San Jose, CA 95134 1-408-544-8672 {gdupenlo, tlemeuni, rmayr}@altera.com ABSTRACT This paper discusses the use of transistor abstraction to enable the

mindspeed t4000

Abstract: iphone 3G comcerto 4G 3G LTE WIMAX white paper iphone 4 T4000 material data sheet arm11 fft iphone IS-54 "channel estimation"
Contextual Info: White Paper > Mindspeed® Solves 4G Challenges with New Class of Multi-Core Baseband Processing System-on-Chips SoCs for Pico, Micro and Macrocell Platforms Accelerating 4G Computational Demands Spur Need for Highly Integrated, SoCs that Combine Multiple,

FT232 DATA SHEET

Abstract: ft232 pin diagram VMUSIC2 USB HOST DRIVER V03 vf2f VNC1L ft232 VDIP1 example source code VDIP2 Lexar Firefly
Contextual Info: Future Technology Devices International Ltd Vinculum Firmware User Manual Version: 2.1 Issue Date: 2007-08-02 Future Technology Devices International Ltd. FTDI 373 Scotland Street, Glasgow G5 8QB U.K. Tel.: +44 (0) 141 429 2777 Fax: + 44 (0) 141 429 2758