"SILICON STORAGE TECHNOLOGY" PROGRAM ERASE READ Search Results

oasis

Abstract: 32-PIN F01A SST31LH041 Actron
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

Bf 353

Abstract: NEXUS FLASH ERASE oasis 32-PIN F01A SST31LH021
Contextual Info: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

TA 7644 BF

Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

tekelec TA 355

Abstract: NEXUS FLASH ERASE oasis SST31LH103
Contextual Info: 1 Megabit Flash + 256 Kilobit SRAM ComboMemory SST31LH103 Advance Information FEATURES: • Organized as 64K x16 Flash + 16K x16 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations 2.7-3.6V without concurrent operation

NEXUS FLASH ERASE

Abstract: endrich oasis LH1605 A190 Carlo Gavazzi A1668
Contextual Info: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 18 ms (typical)

oasis

Contextual Info: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 • Single 3.0-3.6V Read and Write Operations • Superior Reliability

SST39VF160Q

Abstract: XX98 SST39VF160 VF160 XX90
Contextual Info: 16 Megabit 1M x 16-Bit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 2.7V-only Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 3 ms typical

SST39SF020

Abstract: 32-PIN
Contextual Info: 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Preliminary Specifications FEATURES: • Organized as 256 K X 8 • Single 5.0V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

1N914 data sheet downed

Abstract: VF100 VF1003 SST39LF100 SST39VF100 2AAA 5555
Contextual Info: 1 Mbit 64K x16 Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1 Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100

SST39VF088-90-4C-EK

Contextual Info: 8 Mbit x8 Multi-Purpose Flash SST39VF088 EOL Data Sheet FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

XX98

Abstract: SST39VF800Q
Contextual Info: 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 18 ms (typical)

PSRAM

Abstract: 555H SST32HF64A1 SST32HF64A2
Contextual Info: Multi-Purpose Flash Plus + PSRAM ComboMemory SST32HF64A2 SST32HF64A1 / 64B164Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories EOL Data Sheet FEATURES: • ComboMemories organized as: – SST32HF64A2: 4M x16 Flash + 1024K x16 PSRAM • Single 2.7-3.3V Read and Write Operations

Contextual Info: 1 Mbit 64K x16-bit Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1 Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100

555H

Abstract: SST39VF088 1227
Contextual Info: 8 Mbit x8 Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memory Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical)

Contextual Info: 1 Mbit 64K x16 Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100 • Superior Reliability

SST32HF324C

Contextual Info: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF324C SST32HF324C32Mb Flash + 4Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemory organized as: – 2M x16 Flash + 256K x16 SRAM • Single 2.7-3.3V Read and Write Operations

SST39WF800A

Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Preliminary Specifications FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical)

AP 309

Abstract: oasis 28VF040 SST28LF040 SST28SF040 SST28VF040 0418 bd china SST28SF040-120-3C- EH
Contextual Info: 4 Megabit 512K x 8 SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST28SF040 – 3.0-3.6V for the SST28LF040 – 2.7-3.6V for the SST28VF040 • Superior Reliability

by 399 data sheet

Abstract: diode BY 399 SST39LF160 SST39VF160 VF160 xx55
Contextual Info: 16 Mbit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 • Superior Reliability

SST39VF080

Abstract: SST39LF080
Contextual Info: 8 Mbit x8 Multi-Purpose Flash SST39LF080 / SST39VF080 SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories EOL Data Sheet FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080 – 2.7-3.6V for SST39VF080 • Superior Reliability

xx30

Abstract: SST39LF100 SST39VF100 VF100
Contextual Info: 1 Mbit 64K x16 Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100 • Superior Reliability

SST39VF088

Contextual Info: 8 Mbit x8 Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memories Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical)

ams telephone

Contextual Info: 8 Mbit x8 Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memories Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical)

Contextual Info: 4 Mbit x16 Multi-Purpose Flash SST39WF400A SST39WF400A3.0 & 2.7V 4Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 256K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical)