"MOSFET "600V 10A Search Results

Mosfet

Abstract: SSF10N60F
Contextual Info: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF10N60
Contextual Info: SSF10N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.69Ω (typ.) ID 10A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and

RG 2006 10A 600V

Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

W20NM60

Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Contextual Info: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

w20nm60

Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

10N60K

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

sono2

Abstract: mosfet 600V 10A ic
Contextual Info: MITSUBISHI Neh POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE FK1OKM-12 • Voss . 600V • rDS ON (MAX) .1.18Í2 • Id . 10A

P10N60

Abstract: F10N60 10A600VRDS PJF10N60 PJP10N60
Contextual Info: PJP10N60 / PJF10N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

tf 10n60

Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

10N60G TO-220F

Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

10N60G

Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

20nm60

Abstract: W 20NM60 *b20nm6 STB20NM60-1
Contextual Info: STP20NM60 - STP20NM60FP STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/TO-220FP/I PAK MDmesh Power MOSFET ADVANCED DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM60/FP 600V <0.29Ω 20 A STB20NM60-1 600V <0.29Ω 20 A TYPICAL RDS(on) = 0.25Ω

AOTF10N60

Abstract: VA36 MOSFET 700V 10A AOTF10N6
Contextual Info: AOT10N60 / AOTF10N60 600V, 10A N-Channel MOSFET formerly engineering part number AOT9608/AOTF9608 General Description Features The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

RG 2006 10A 600V

Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
Contextual Info: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

AOTF10N60

Contextual Info: AOT10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTF10N60

Contextual Info: AOT10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOWF10N60

Abstract: 262F
Contextual Info: AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTF10N60

Abstract: AOT4N60
Contextual Info: AOT10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTf10n60

Contextual Info: AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC