"CMOS GATE ARRAY" FUJI Search Results

74LS382

Abstract: C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381
Contextual Info: ix u jD U Lu ra n ctiu F U JIT S U _ mmm CWiOS Gate Array GENERAL INFORMATION The Fujitsu CMOS gate array family consists of twentyeight devlcs types which are fabricated with advanced silicon gate CMOS technology. And more than 14devlc«s are coming. Fujitsu CMOS gate array are configured In a

CG46533

Abstract: CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35
Contextual Info: November 1995 Edition 1.5 DATA SHEET CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 µm drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 µm drawn channel length, digital CMOS embedded gate array

CG46533

Abstract: . rp 700 pc -24 CG46833 CG46134 SQFP100 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50
Contextual Info: FUJITSU Novem ber 1995 Edition 1.5 DATA SHEET '• CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array

CG46713

Abstract: CG46194 CG46533 CG46134 CG46104
Contextual Info: FUJITSU Novem ber 1995 Edition 1.5 DATA S H E E T : CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 |im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array

C350AVB

Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices

DS06-20110-5E

Abstract: CE81 0.18-um CMOS standard cell library inverter
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-5E Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration

CE81

Abstract: floor plan for 4 bit adder 722k
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS06-20110-5Ea Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration

QFP-240

Abstract: QFP240 CG61304P LQFP100 LQFP120 LQFP144 LQFP176 LQFP48 LQFP64 LQFP80
Contextual Info: New products CG61P CMOS Gate Array CG61P Series This series features the first gate array incorporating an analog PLL. Four frames are available in a capacity range from 70K to 300K: two types are provided for analog PLLs of a low-frequency version 90 to 160 MHz ;

t2d 64

Abstract: lu1414 fdn 156 MB631XXX LU18 mb633
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE AU Series CMOS Gate Arrays DESCRIPTION The AU series of 1.2 Jim CMOS gate arrays, available in eight device types with from 10K to 100K gates, achieves the ultra fast speed of 0.6 ns per gate. Thanks to the channel-free structure of the AU gate array, AU basic cells can be used for logic cells,

Contextual Info: T—42—11—-09' MB 66000V H Silicon Gate CMOS LSI The Fujitsu C -8 0 0 0 V H M B 6 6 0 0 0 V H Series is a very highly integrated, low power and high speed, gate array L S I fabricated w ith silicon gate C M O S technol­ ogy. The array consists o f 8 0 0 0 internal basic cells (2

CG51364

Abstract: CG51284 CG51114 CG51754 CG51214 CG51484 CG51654 fujitsu asic quad design motive
Contextual Info: November 1995 Edition 1.5 DATA SHEET CG51/CE51 SERIES 3V, 0.50 MICRON HIGH PERFORMANCE/LOW POWER CMOS GATE ARRAYS DESCRIPTION The Fujitsu CG51/CE51 is a series of ultra high performance CMOS gate arrays. The CG51 is a high density Sea-of-Gates array for applications requiring high levels of integration or low

6 input or gate

Abstract: t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic
Contextual Info: S-H 0 S SYSTEMS INC SbE » • 7ei3StiOti ÜDDlM'ia 076 «SIIO SLA8000 HIGH SPEED CMOS GATE ARRAY ■ DESCRIPTION The SLA8000 Series consists of a group of 13 high speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron silicon gate technology. Gate counts range from 5K to 80K

fujitsu cg10

Contextual Info: 31E T> E3 3 7 4 = ^ 2 0013405 Ö S 3 Ffll FUJITSU MICROELECTRONICS CMOS ASIC T ' W' b o CG10 Gate Array Device Description Device Name Maximum Number of Signal Pins2 Cell Propagation Delay 2-input Gate Equivalency1 108 3,256 gates CG10272 CG 10342 4,032 gates

CG10492

Abstract: CG10692 cg10572 CG10342 CG10 CG10272
Contextual Info: CMOS ASIC CG10 Gate Array Device Description Device Name CG10272 Maximum Number of Signal Pins2 Cell Propagation Delay 2-input Gate Equivalency1 108 3,256 gates CG 10342 4,032 gates CG 10492 5,572 gates CG10572 6,510 gates Input: Normal buffer Clock driver

CS91

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS06-20208-3Ea Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16

CS91

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16

CG31164

Abstract: CG31 fujitsu CG31134 fujitsu gate array T-90-60
Contextual Info: FUJITSU MICR OELECTRONICS 31E ]> Bi BTMTTbS 0 0 1 3 3 ^ b O F M I CMOS ASIC T-io-w - r - * # - IM ? CG31 Sea-of-Gates Array Device Description Device Name 2-Input Gate Equivalency1 CG31134 130,720 gates

TEMIC PLD

Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
Contextual Info: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The

B8228

Contextual Info: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8

T157WG

Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE
Contextual Info: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and

CG51754

Abstract: fujitsu asic CE51654 CG51114 CG51284 CG51364 CG51484 CG51214 CG51654 CG-51
Contextual Info: cP FUJI' Novem ber 1995 Edition 1.5 DATA SHEET = - ' CG51/CE51 SERIES 3V, 0.50 MICRON HIGH PERFORMANCE/LOW POWER CMOS GATE ARRAYS DESCRIPTION The Fujitsu CG51/CE51 is a series of ultra high performance CMOS gate arrays. The CG51 is a high density Sea-of-Gates

fujitsu cg10

Abstract: transistor H6C cg10572 CG10692 CG10492 CG10272 DIP-48P-MOI SQFP64 LCC64 CG10342
Contextual Info: cP FUJITSU May 1990 Edition 1.0 _ PRODUCT PROFILE - CG 10 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG10 series of 0.8-m icron CMOS gate arrays is a highly integrated low-power, ultra high-speed product fam ily that derives its enhanced performance and increased user flexibility from the use of a system-proven, dual-colum n gate structure and 2-layer

transistor bL P09

Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
Contextual Info: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its

CG31204

Abstract: PGA-208 CG31 series fujitsu cg10 CG31 fujitsu pga208 cmos gate array cg31
Contextual Info: iR N 1 0 'M l September 1990 Edition 1.0 PRODUCT INFORMATION_ FUJITSU CG31 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG31 series of 0.8-p.m CMOS gate arrays are currently available in three device types with from 120K to 200K gates. These arrays achieve the ultra fast speed of 0.37 ps per gate. Thanks to the channelless sea-of-gates