"CMOS GATE ARRAY" FUJI Search Results

CG46533

Abstract: CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35
Contextual Info: November 1995 Edition 1.5 DATA SHEET CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 µm drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 µm drawn channel length, digital CMOS embedded gate array

CG46713

Abstract: CG46194 CG46533 CG46134 CG46104
Contextual Info: FUJITSU Novem ber 1995 Edition 1.5 DATA S H E E T : CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 |im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array

C350AVB

Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices

t2d 64

Abstract: lu1414 fdn 156 MB631XXX LU18 mb633
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE AU Series CMOS Gate Arrays DESCRIPTION The AU series of 1.2 Jim CMOS gate arrays, available in eight device types with from 10K to 100K gates, achieves the ultra fast speed of 0.6 ns per gate. Thanks to the channel-free structure of the AU gate array, AU basic cells can be used for logic cells,

Contextual Info: T—42—11—-09' MB 66000V H Silicon Gate CMOS LSI The Fujitsu C -8 0 0 0 V H M B 6 6 0 0 0 V H Series is a very highly integrated, low power and high speed, gate array L S I fabricated w ith silicon gate C M O S technol­ ogy. The array consists o f 8 0 0 0 internal basic cells (2

CG51364

Abstract: CG51284 CG51114 CG51754 CG51214 CG51484 CG51654 fujitsu asic quad design motive
Contextual Info: November 1995 Edition 1.5 DATA SHEET CG51/CE51 SERIES 3V, 0.50 MICRON HIGH PERFORMANCE/LOW POWER CMOS GATE ARRAYS DESCRIPTION The Fujitsu CG51/CE51 is a series of ultra high performance CMOS gate arrays. The CG51 is a high density Sea-of-Gates array for applications requiring high levels of integration or low

6 input or gate

Abstract: t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic
Contextual Info: S-H 0 S SYSTEMS INC SbE » • 7ei3StiOti ÜDDlM'ia 076 «SIIO SLA8000 HIGH SPEED CMOS GATE ARRAY ■ DESCRIPTION The SLA8000 Series consists of a group of 13 high speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron silicon gate technology. Gate counts range from 5K to 80K

fujitsu cg10

Contextual Info: 31E T> E3 3 7 4 = ^ 2 0013405 Ö S 3 Ffll FUJITSU MICROELECTRONICS CMOS ASIC T ' W' b o CG10 Gate Array Device Description Device Name Maximum Number of Signal Pins2 Cell Propagation Delay 2-input Gate Equivalency1 108 3,256 gates CG10272 CG 10342 4,032 gates

CS91 Series

Abstract: CS91 fujitsu inverter air F0609
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-3E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16

TEMIC PLD

Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
Contextual Info: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The

B8228

Contextual Info: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8

T157WG

Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE
Contextual Info: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and

transistor bL P09

Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
Contextual Info: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its

up down counter using IC 7476

Abstract: full adder using Multiplexer IC 74151 74154 shift register IC sk 7443 full adder circuit using ic 74153 multiplexer DN 74352 full adder using ic 74138 74183 adder pin function of ic 74390 7478 J-K Flip-Flop
Contextual Info: FUJITSU MICROELECTRONICS FUJITSU 37417bH 0010SÔ3 23E D MB65XXXX MB66XXXX MB67XXXX AV CMOS SERÍES GATE ARRAYS ~ June 1986 Edition 2.0 : T - 4 2 - n - o °i DESCRIPTION S The Fujitsu MB65xxxx/MB66xxxx/MB67xxxx family are a series of high performance CMOS gate arrays designed to provide high

SC472

Abstract: CG21103 CG21403 CG21153 mbcg CG21303 CG21753 Mbcg21153 CG21203 QFP-208 fujitsu
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE CG21 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG21 series of 0.8 n m CMOS gate arrays are currently available in five device types with from 3 0K to 100K gates. Three more CG21 arrays, ranging from 10Kto 20Kgates, are now underdevelopm ent. These arrays achievethe u ltrafast speed of 0.37 ps per

IC 3-8 decoder 74138 pin diagram

Abstract: full adder using ic 74138 full adder using Multiplexer IC 74151 pin diagram for IC 7483 for 4 bit adder chip and pin diagram of IC 7491 DN 74352 circuit diagram for IC 7483 full adder application of ic 74153 ic 74148 block diagram 74191, 74192, 74193 circuit diagram
Contextual Info: MB65XXXX MB66XXXX MB67XXXX AV CMOS SERIES GATE ARRAYS F U JIT S U June 1986 Edition 1.0 DESCRIPTION The Fujitsu MB65xxxx/MB66xxxx/MB67xxxx family are a series of high performance CMOS gate arrays designed to provide high density, low power, and operating speeds that are comparable to standard bipolar logic. The AV MB65xxxx series is an ideal

Contextual Info: p October 1996 Edition 2.0 Z DATASHEET CE61 SERIES 0.35 MICRON HIGH PERFORMANCE/LOW POWER CMOS EMBEDDED ARRA YS CE61 SERIES PRODUCT SUMMARY DESCRIPTION The Fujitsu CE61 is a series of high performance CMOS embedded arrays featuring full support of diffused high-speed

atmel 952

Abstract: atmel h 952 ATL35 vhdl code for flip-flop jk flip flop to d flip flop conversion RTL 204 605 vhdl code for D Flipflop dssb oak dsp AOI222
Contextual Info: Features • High Speed - 150 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 3.7 Million Used Gates and 976 Pins • System Level Integration Technology ™ ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and Lode™DSP Cores, 10T/100 Ethernet MAC, USB and PCI Cores,

508K

Abstract: F70 Package fujitsu lvds standard MCM NAND CE61 404k bga HQFP 208 026K
Contextual Info: October 1996 Edition 2.0 DATA SHEET CE61 SERIES 0.35 MICRON HIGH PERFORMANCE/LOW POWER CMOS EMBEDDED ARRAYS DESCRIPTION The Fujitsu CE61 is a series of high performance CMOS embedded arrays featuring full support of diffused high-speed RAMS, ROMS and embedded functions. The CE61 offers

3 to 8 bit decoder vhdl IEEE format

Abstract: ATL60 ATLS60 PO61 ttl buffer
Contextual Info: ATL60 Features x x x x x x x x 0.6Pm Drawn Gate Length 0.5Pm Leff Sea-of-Gates Architecture With Triple Level Metal 5.0 Volt, 3.3 Volt, and 2.0 Volt Operation Including Mixed Voltages On Chip Phase Locked Loop Available to Synthesize Frequencies up to 150 MHz and Manage Chip-to-Chip Clock Skew

atmel 838

Abstract: atmel 906 ATMEL 712 atmel 532 ATMEL 706 atmel 751 BGA 168 atmel 635 atmel 344 verilog code for 32 bit risc processor
Contextual Info: Features • High-speed - 100 ps Gate Delay - 2-input NAND, FO = 2 nominal • Up to 6.9 Million Used Gates and 976 Pins • System Level Integration Technology – Cores: ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and LodeDSPCores™, 10T/100 Ethernet MAC, USB and PCI Cores

ATMEL 634

Abstract: MH1099 MH1242 PO11V5 dual lvds vhdl
Contextual Info: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)

Contextual Info: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)

power supply 5 Volt

Abstract: Industry Standard Architecture Am29Fxxx
Contextual Info: 3.0 Volt-only Flash Memory Technology Technology Background July 2003 The following document refers to Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and