Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    "CLASS AB LINEAR" HF Search Results

    "CLASS AB LINEAR" HF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM143H/883
    Rochester Electronics LLC LM143 - Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, MBCY8 - Dual marked (7800303XA) PDF Buy
    LM107J/883
    Rochester Electronics LLC LM107 - Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDIP8 - Dual marked (5962-8958901PA) PDF Buy
    ICL8212MTY/B
    Rochester Electronics LLC Programmmable High Accuracy Voltage Detecor PDF Buy
    LM710CH
    Rochester Electronics LLC LM710 - Comparator, 1 Func, 5000uV Offset-Max, 40ns Response Time, BIPolar, MBCY8 PDF Buy
    LM107J-14/883
    Rochester Electronics LLC LM107 - Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDIP14 - Dual marked (5962-8958901CA) PDF Buy

    "CLASS AB LINEAR" HF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    100227

    Abstract: NEL2012F03-24 8614
    Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN: 13.5 dB Class A, 11.0 dB Class AB


    Original
    NEL2012F03-24 NEL2012F03-24 24-Hour 100227 8614 PDF

    1N4153

    Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
    Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:


    Original
    NEL200101-24 NEL200101-24 24-Hour 1N4153 NEL2001 2.2 uf 50v electrolytic PDF

    1450 transistor

    Abstract: 1350 transistor 1314AB60
    Contextual Info: R.1.A.052699-PHAN 1314AB60 60 Watts PEP, 25 Volts, Class AB Linear 1350 – 1400 MHz ADVANCED RELEASE GENERAL DESCRIPTION The 1314AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF output power over the band 1350-1400 MHz. This


    Original
    052699-PHAN 1314AB60 1314AB60 250mA. 1450 transistor 1350 transistor PDF

    BUY60

    Abstract: MOTOROLA TRANSISTOR 736
    Contextual Info: MOTOROLA The RF Line MRF6414 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8.5 dB @ 960 MHz, Class AB


    Original
    MRF6414/D MRF6414 BUY60 MOTOROLA TRANSISTOR 736 PDF

    EIMAC* 5CX1500A

    Abstract: 5CX1500A scans-048 DSAGER00032
    Contextual Info: 5CX1500A Power Pentode he Svetlana 5CX1500A is a highperformance ceram ic/m etal power pentode designed for use as a highly linear Class AB I linear amplifier. It may also be used as a high-gain Class C amplifier in HF radio frequency' industrial processing applications such as plasma


    OCR Scan
    5CX1500A EIMAC* 5CX1500A scans-048 DSAGER00032 PDF

    1920CD60

    Abstract: 55SW
    Contextual Info: 1920CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS


    Original
    1920CD60 1920CD60 55SW PDF

    indiana general

    Abstract: F624-19 F627 S175-50 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9
    Contextual Info: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION CASE OUTLINE The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is


    Original
    S175-50 5-240pF 75-480pF 2700pF F627-9, F625-9, F624-19, F627-8, indiana general F624-19 F627 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9 PDF

    1920AB60

    Abstract: max6011
    Contextual Info: 1920AB60 60 Watts PEP, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS


    Original
    1920AB60 1920AB60 max6011 PDF

    1617AB15

    Abstract: BVces
    Contextual Info: 1617AB15 15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB15 is a COMMON EMITTER transistor capable of providing 15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM BASE STATION


    Original
    1617AB15 1617AB15 BVces PDF

    1617AB5

    Abstract: GHz Technology
    Contextual Info: 1617AB5 5 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB5 is a COMMON EMITTER transistor capable of providing 5 Watts PEP of Class AB, RF output power over the band 1626- 1660 MHz. This transistor is specifically designed for SATCOM BASE STATION


    Original
    1617AB5 1617AB5 GHz Technology PDF

    1819CD60

    Contextual Info: 1819CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1805 - 1880 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1805-1880 MHz. This transistor is specifically designed for LINEAR PERSONAL PCN CDMA


    Original
    1819CD60 1819CD60 PDF

    "class AB Linear"

    Abstract: hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet HF20-12F
    Contextual Info: RF Power Transistors HFSSB ASI HF transistors are characterized for broadband amplifier operation, 2-30MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 12.5 Volt, Class AB Linear BIAS P out


    OCR Scan
    2-30MHz HF5-12F HF5-12S HF10-12F HF10-12S HF20-12F HF20-12S HF50-12F HF50-12S HFT150-28 "class AB Linear" hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet PDF

    SD1489

    Abstract: airtronic ATC 100A
    Contextual Info: SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original
    SD1489 SD1489 airtronic ATC 100A PDF

    SD1730

    Abstract: TH430 power transistors cross reference SD1224-10 SD1405 SD1407 HF TRANSISTORS SD1487 SD1726 SD1727
    Contextual Info: SILICON POWER TRANSISTORS HF TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 2-30 MHz CLASS AB LINEAR, COMMON EMITTER, HF/SSB


    Original
    SD1405 SD1487 SD1224-10 SD1407 SD1729 SD1730 SD1411 SD1733 SD1726 SD1727 SD1730 TH430 power transistors cross reference SD1224-10 SD1405 SD1407 HF TRANSISTORS SD1487 SD1726 SD1727 PDF

    SD1456

    Abstract: push pull class AB RF linear TCC3100
    Contextual Info: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original
    SD1456 TCC3100) TCC3100 SD1456 push pull class AB RF linear TCC3100 PDF

    SD1476

    Abstract: 1uF 63V LCC7950 resistor 1W
    Contextual Info: SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR


    Original
    SD1476 SD1476 1uF 63V LCC7950 resistor 1W PDF

    MRF240

    Abstract: BUY60 MRF240 equivalent
    Contextual Info: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain


    Original
    MRF240/D MRF240 MRF240 MRF240/D* MRF240/D BUY60 MRF240 equivalent PDF

    Contextual Info: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF240 . . . designed for 13.6 volt VHF large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment.


    OCR Scan
    MRF240/D MRF240 MRF240 40-JZi PDF

    SD4100

    Abstract: push pull class AB RF linear L band
    Contextual Info: SD4100 RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS • 470 - 860 MHz • 28 VOLTS • CLASS AB PUSH PULL • DESIGNED FOR HIGH POWER LINEAR OPERATION • HIGH SATURATED POWER CAPABILITY • INTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED


    Original
    SD4100 SD4100 push pull class AB RF linear L band PDF

    TCC3100

    Abstract: SD1456
    Contextual Info: SD1456 TCC3100 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS AB PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION


    Original
    SD1456 TCC3100) SD1456 TCC3100 PDF

    CAPACITOR chip murata mtbf

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
    Contextual Info: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    Original
    MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136 PDF

    Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    Original
    MRF15090/D MRF15090 DEVICEMRF15090/D PDF

    Contextual Info: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    Original
    MRF15030/D MRF15030 MRF15030/D* PDF

    MRF896

    Abstract: 1N4001 Motorola
    Contextual Info: MOTOROLA Order this document by MRF896/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF896 Designed for 24 Volt UHF large–signal, common emitter, Class AB and Class A linear amplifier applications in industrial and commercial FM/AM equipment


    Original
    MRF896/D MRF896 MRF896/D* MRF896 1N4001 Motorola PDF