"128K X 8" SRAM PLCC Search Results

Contextual Info: |U |I C R O N 128K X M T 58C 1289 9 S Y N C H R O N O U S SRAM 128K x 9 SRAM SYNCHRONOUS SRAM FULLY REGISTERED INPUTS AND OUTPUTS FEATURES PIN ASSIGNMENT Top View T im ing specific to SPARC m icroprocessor Fast cycle times: 12,16.6 and 20ns Fast clock to d ata valid: 6, 8 and 10ns

Contextual Info: SEMICONDUCTOR 'W 128K x 32 Static RAM M odule Features Functional Description • High-density 4-megabit SRAM module T h e C Y M 1836 is a high-perform ance 4-m egabit static R A M m odule organized as 128K w ords by 32 bits. This m odule is constructed from fo u r 128K x 8 SR A M s in

cs312

Contextual Info: CYM1836 CYPRESS SEMICONDUCTOR 'W 128K x 32 Static RAM M odule Features Functional Description • Hieh-density 4-megabit SRAM module The CYM1836 is a high-performance 4-megabit static RAM module organized as 128K words by 32 bits. This module is constructed from four 128Kx 8 SRAMs in

Memory

Contextual Info: 512Kx8/256Kx16/128Kx32, 30A167-00 A 15 - 35ns, Surface Mount FTS128KX32XP 4 Megabit 5 Volt CMOS SRAM DESCRIPTION: The FTS128KX32XP/XHP is a 68-pin surface mount module consisting of four 128K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4

32-PIN

Abstract: 34-PIN DS1245 DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
Contextual Info: DS1245Y/AB 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

Contextual Info: DALLAS SEMICONDUCTOR DS1645Y/AB, DS1645YLPM/ABLPM Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM or EEPROM

DS1245

Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
Contextual Info: DS1245Y/AB 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

SRAM 34 pin

Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245W DS1245W-150 DS9034PC
Contextual Info: DS1245W 3.3V 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

100L08

Abstract: GLT710008 8X13
Contextual Info: G -LINK GLT6100L08 Ultra Low Power 128k x 8 CMOS SRAM Nov 2000 Rev. 02 Features : Description : ∗ The GLT6100L08 is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 Low-power consumption.

DS1245

Abstract: DS1245AB DS1245W DS9034PC
Contextual Info: DS1245W PRELIMINARY DS1245W 3.3V 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM, EEPROM or

Contextual Info: DS1645Y/AB DALLAS SEMICONDUCTOR DS1645Y/AB Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM

dallas sram nonvolatile

Contextual Info: DS1345YLPM/ABLPM PRODUCT PREVIEW DS1345YLPM/ABLPM DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Power Monitors FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM or EEPROM

32-PIN

Abstract: 34-PIN DS1245 DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
Contextual Info: DS1245Y/AB 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

DS1645AB

Abstract: DS1645Y DS1645Y-70
Contextual Info: DS1645Y/AB DS1645Y/AB Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM NC 1 32

DS1245

Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
Contextual Info: DS1245Y/AB 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

Contextual Info: DS1345YLPM/ABLPM PRODUCT PREVIEW DS1345YLPM/ABLPM DALLAS 1024K Nonvolatile SRAM with Power Monitors SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM or EEPROM

DS1245

Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS9034PC DSI245AB-85
Contextual Info: DS1245Y/AB 1024k N o n vo la tile SRAM www.dalsemi.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory

DS1245

Abstract: DS1245AB DS1245AB-100 DS1245Y DS1245Y-100 DS1245Y-120 DS9034PC
Contextual Info: DS1245Y/AB DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM, EEPROM or Flash memory

32-PIN

Abstract: DS1245 DS1245W DS1245W-100 DS1245W-100IND DS1245W-150 DS1245WP-100 DS9034PC SRAM 34 pin
Contextual Info: DS1245W 3.3V 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM,

Contextual Info: DS1245W 3.3V 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM,

a034

Abstract: 32-PIN DS1245 DS1245W DS1245W-100 DS1245W-100IND DS1245W-150 DS1245WP-100 DS9034PC
Contextual Info: DS1245W 3.3V 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES • •         PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM,

DS9034PC

Abstract: 32-PIN 34-PIN DS1245 DS1245W DS1245W-100 DS1245W-150
Contextual Info: DS1245W 3.3V 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM,

7C340

Contextual Info: AT&T Advance Data Sheet January 1992 ATT7C340 Microelectronics High-Speed CMOS 1 Mbit 128K x 8 SRAM Synchronous, Pipelined Architecture TTL Compatible Common I/O Features • High Speed — 10 ns maximuim access times ■ Registered addresses, data I/O, and control inputs

32-PIN

Abstract: 34-PIN DS1245 DS1245AB DS1245W DS1245W-100 DS1245W-150 DS9034PC
Contextual Info: DS1245W 3.3V 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM,