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Part : ZENER-KIT Supplier : Comchip Technology Manufacturer : Chip1Stop Stock : 1 Best Price : $35.7000 Price Each : $35.7000
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zener diode BN

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: preferred to used the diode + zener network. The diode + zener network Like the resistor, the zener allows , 27 ±0.2 4.9 DD DM = BC BD BJ BN = = = 10.5 ±0.1 27 32.9 MAX D 3.2 ±0.1 6.35 ±0.1 STUD ØM3 ØM3 ØUNC4.40 ØM2.5 ±0.1 ±0.1 32.9 MAX D BD BN , ,DQ,DD,DM,HA,BC,BD,BJ,BN)_| | 4-Nominal Voltage (06,12,26 , the extra power dissipated. Semi-conductor devices The diode It is the most simple method to Leach International
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GP250 gp250 relay diode GP250 gp250 diode AMP-50 gp250 leach relay SCC3602/010
Abstract: of a single diode. It is now preferred to used the diode + zener network. The diode + zener network , 25.2 ±0.2 27 ±0.2 DD DM C 29.8 MAX 33.55 ±0.25 BC BJ = BD BN = = = BC BD BJ BN Ø5 , ,DM,HA,BC,BD,BJ,BN)_| | 4-Nominal Voltage (06,12,26)_ , The diode It is the most simple method to totally suppress the surge voltage. It has the major , diode, of the energy contained in the coil itself. The following measurement is performed once again on Leach International
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Leach Coil 28VDC N007 SCC3602/003
Abstract: , and it limits the action of a single diode. It is now preferred to used the diode + zener network. The diode + zener network Like the resistor, the zener allows a faster decurrent decay. In addition it , BJ = BD BN = = = BC BD BJ BN Ø5.5 STUD ØM3 ØM3 ØUNC4.40 ØM2.5 D 9.5 7.3 10.5 9.5 , )_| | | 3-Mounting Style (00,DB,DJ,DE,DQ,DD,DM,HA,BC,BD,BJ,BN)_| | 4-Nominal Voltage (06,12 , dissipated. Semi-conductor devices The diode It is the most simple method to totally suppress the surge Leach International
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MIL-R-39016/6 CECC16101-014 SCC3601/003
Abstract: , and it limits the action of a single diode. It is now preferred to used the diode + zener network. The diode + zener network Like the resistor, the zener allows a faster decurrent decay. In addition it , 33.55 ±0.25 BC BJ = BD BN = = = BC BD BJ BN Ø5.5 STUD ØM3 ØM3 ØUNC4.40 ØM2.5 D 9.5 7.3 , )_| | | 3-Mounting Style (00,DB,DJ,DE,DQ,DD,DM,HA,BC,BD,BJ,BN)_| | 4-Nominal Voltage (06,12 , dissipated. Semi-conductor devices The diode It is the most simple method to totally suppress the surge Leach International
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SCC3602 DATA ABOUT RELAY SWITCH
Abstract: Rating Unit Collector-base voltage, With Zener diode (11±3V) Parameter VCBO 20 V Collector-emitter voltage, With Zener diode (11±3V) VCEO 15 V Emitter-base voltage VEBO 5 V , +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Contains a diode between , voltage V(BR)CEO Diode forward voltage VF Base-emitter resistance RBE IF = 0.5A 1.5 1 V kÙ Marking Marking BN www.kexin.com.cn 1 Kexin Kexin
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2SD2324 smd diode marking BN marking BN smd transistor bn smd transistor marking BN smd zener
Abstract: Rating Unit Collector-base voltage, With Zener diode (11±3V) Parameter VCBO 20 V Collector-emitter voltage, With Zener diode (11±3V) VCEO 15 V Emitter-base voltage VEBO 5 V , 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Contains a diode between colletor , voltage V(BR)CEO Diode forward voltage VF Base-emitter resistance IF = 0.5A RBE 1.5 1 V kÙ Marking Marking BN http://www.twtysemi.com sales@twtysemi.com 4008-318-123 TY Semiconductor
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Abstract: transistor current switches. By far the dominant error source is the drift of the zener diode that makes up , offset current of amplifiers, A1 and A2, as well as the drift of the zener reference diode. By far, the dominant error source is the drift of this zener, while the offsets of A1 contribute to the gain drift , VFSR (1 + K) bn 2n b1 2 + b2 4 +.+ bn 2n + V­FS + V­FS + VOFFSET Error , . V OUT V REF V REF b1 b 2 bn + ­ K + +K+ n = 0 RF R BPO R REF 2 4 2 where K is a Burr-Brown
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B12 2N DIODE AB-063
Abstract: HITACHI 2SD2323- Silicon NPN Triple Diffused High Voltage Switching, Igniter Feature * Built-in I ligh voilage zener diode (300V) â'¢ High speed switching Absolute Maximum Ratings (Ta = 25 , Emitter to base voltage VEBO 7 V Collector current ¡C 6 A Diode Current Id'1 6 A Collector peak , 2 5°C) Symbol Min Typ Max Unit Test condition Collector to base breakdown voltage v(Bn)CBO 300 â , ) DC Current Transfer Ratio vs. Collector Current 10000 HITACHI 2SD2323 Zener Voltage vs. Ambient -
OCR Scan
sa1 Zener diode diode 300v Scans-009514 igniter 2SD2323--
Abstract: UDZ2V0B-UDZ56B SURFACE MOUNT PRECISION ZENER DIODE Features UNDER DEVELOPMENT SOD-323 Dim A H , Automated Assembly Processes Very Sharp Breakdown Characteristics Very Tight Tolerance on Zener Breakdown , number in Table 1 from Sheet 2 example: 6.2V Zener = UDZ6V2B-7. Notes: 1. For Packaging Details, go to , UDZ2V0B-UDZ56B Electrical Characteristics @ TA = 25°C unless otherwise specified Zener Voltage Range (Note , 300 300 300 350 350 Maximum Zener Impedance (Note 4) ZZT @ IZT W 1000 1000 1000 1000 1000 1000 1000 Diodes
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zener diode BZ 320 100n18 B9 zener diode BZ 140 zener J-STD-020A MIL-STD-202 3000/T UDZ11B UDZ12B UDZ10B
Abstract: ZENER DIODE SOT-23 0.100 0.013 1.40 0.95 0.50 0.35 FEATURES : 3.10 2.70 0.19 0.08 1 2 1.02 0.89 2.04 1.78 MECHANICAL DATA : 3.00 2.20 3 1.65 1.20 * Zener , ELECTRICAL CHARACTERISTICS Zener Voltage Type No. Marking VZ @ IZT (1) (V) Certificate TW00/17276EM (Ta=25 °C unless otherwise noted) Test Maximum Zener Test Maximum Reverse , 0.25 0.1 15 MMBZ5251B BN 20.90 22 23.10 5.6 29 600 0.25 0.1 17 EIC Semiconductor
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MMBZ5221B MMBZ5261B MMBZ5223B MMBZ5225B MMBZ5253B BJ marking SOT-23 package zener diode BH-16 transistor Zener Diode SOT-23 cd 4515 bp zener diode BZ 55 DIODE BZ TH97/10561QM MMBZ5246B
Abstract: VC VE VF VL VN xx 06A20 diode + zener; diodo + zener 1â'¦27 - 10 (b8 , + diode + zener (other Led colours  b7); Led rosso + diodo + zener (altri colori Led  b7 , case of connectors supplied without cable): bn = brown, gn = green, ye = yellow, bu = blue, bk = black , di connettori forniti senza cavo): bn = marrone, gn = verde, ye = giallo, bu = blu, bk = nero; (b7 , 1A parallel diode; diodo parallelo 1A 1.250 - 10 (b8) -1 CA - - - - SHIELD
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DIODO LED VERDE DIODO LED diodo led rosso t 4 diodo diodo led giallo diodo zener EN175301-803 43650-B 43650-C 79A2H 79C2M 83A2T
Abstract: ZENER DIODE ZENER DIODE DIODE MOSFET ZMM5257B DO213AA\PS SOT23 1 DIODES INC , Step 3) Connect W1 (BN) to the most negative point on the battery cell stack. Step 4) Connect W6 (BP , D T - C D T PN BN U1 R11 1N 2N BP 3N W 11 W 10 U2 1N 2N BP 3N C = W9 , ., 2001 C D T PN BN U1 R11 1N 2N BP 3N W 11 W 10 U2 1N 2N BP 3N C = W9 D = , Module Data Sheet Li Ion 2-cell Connection Example + C D T - C D T PN BN U1 R11 PowerSmart
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PS3100 PS331 PS331S Data sheet of thermistor 10K ohms ntc Microcrystal MX1V-TL-32.768K 2N7002-SOT23 MX1V-TL PS3110 PS3120 ISO-9001
Abstract: "Zener" operation â'¢ Direct replacement for LM336, LM136/236, & MC1400 â'¢ Low cost APPLICATIONS â'¢ 8 , AS336AT 50 TO-46 MIL. AS336BT 50 TO-46 IND. AS336AN/BN 50 TO-92 IND. AS336AS/BS 50 SO-8 IND. 1. For lower , .20 mA Operating Temperature AS336AT.-55 °C to+125 °C AS336BT/BN/BS , temperature range. APPLICATION HINTS The AS336 voltage reference is much easier to use than ordinary zener , is adjusted to 5.00 Volts. Any diode such as 1N914, 1N4148 or a 1N457 can be used for this propose -
OCR Scan
LM136 336 LM136- 336 LM136/236/336 AS336AN/BN
Abstract: UDZ2V0B-UDZ56B SURFACE MOUNT PRECISION ZENER DIODE UNDER DEVELOPMENT NEW PRODUCT Features , Very Sharp Breakdown Characteristics Very Tight Tolerance on Zener Breakdown Voltage SOD-323 Dim , * Add "-7" to the appropriate type number in Table 1 from Sheet 2 example: 6.2V Zener = UDZ6V2B , otherwise specified Zener Voltage Range (Note 3) VZT @ IZT Maximum Reverse Current (Note 3) Maximum Zener Impedance (Note 4) IZT ZZT @ IZT ZZK @ IZK W IZK IR VR Min (V) Max Diodes
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zener diode B5 zener diode BZ 22 precision zener diode BZ 85 18 zener diode zener diode udz13b zener diode B6 UDZ47B UDZ6V2B-UDZ10B UDZ10B-UDZ20B UDZ20B-UDZ30B UDZ30B-UDZ47B DS30290
Abstract: UDZ2V0B-UDZ56B SURFACE MOUNT PRECISION ZENER DIODE Features UNDER DEVELOPMENT SOD-323 Dim A H , Automated Assembly Processes Very Sharp Breakdown Characteristics Very Tight Tolerance on Zener Breakdown , number in Table 1 from Sheet 2 example: 6.2V Zener = UDZ6V2B-7. Notes: 1. For Packaging Details, go to , UDZ2V0B-UDZ56B Electrical Characteristics @ TA = 25°C unless otherwise specified Zener Voltage Range (Note , 300 300 300 350 350 Maximum Zener Impedance (Note 4) ZZT @ IZT W 1000 1000 1000 1000 1000 1000 1000 Diodes
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BZ 85 20 zener diode UDZ30B UDZ39B UDZ43B
Abstract: UDZ2V0B-UDZ56B SURFACE MOUNT PRECISION ZENER DIODE UNDER DEVELOPMENT NEW PRODUCT Features , Very Sharp Breakdown Characteristics Very Tight Tolerance on Zener Breakdown Voltage ESD Rating , type number in Table 1 from Sheet 2 example: 6.2V Zener = UDZ6V2B-7. Notes: 1. For Packaging , Characteristics Type Number Marking Code @ TA = 25°C unless otherwise specified Zener Voltage Range (Note 3) VZT @ IZT Maximum Reverse Current (Note 3) Maximum Zener Impedance (Note 4) IZT Diodes
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sod*323* diode MARKING B3 Zener Diode B1 9 zener BZ UDZ15B UDZ13B b3 zener
Abstract: UDZ2V0B-UDZ56B SURFACE MOUNT PRECISION ZENER DIODE Features UNDER DEVELOPMENT SOD-323 Dim A H , Automated Assembly Processes Very Sharp Breakdown Characteristics Very Tight Tolerance on Zener Breakdown , number in Table 1 from Sheet 2 example: 6.2V Zener = UDZ6V2B-7. Notes: 1. For Packaging Details, go to , UDZ2V0B-UDZ56B Electrical Characteristics @ TA = 25°C unless otherwise specified Zener Voltage Range (Note , 300 300 300 350 350 Maximum Zener Impedance (Note 4) ZZT @ IZT W 1000 1000 1000 1000 1000 1000 1000 Diodes
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DIODE ZENER BV zener diode BZ 250 Zener Diode code BU UDZ24B
Abstract: UDZ2V0B-UDZ56B SURFACE MOUNT PRECISION ZENER DIODE UNDER DEVELOPMENT NEW PRODUCT Features , Very Sharp Breakdown Characteristics Very Tight Tolerance on Zener Breakdown Voltage SOD-323 Dim , * Add "-7" to the appropriate type number in Table 1 from Sheet 2 example: 6.2V Zener = UDZ6V2B , Characteristics Type Number Marking Code @ TA = 25°C unless otherwise specified Zener Voltage Range (Note 3) VZT @ IZT Maximum Reverse Current (Note 3) Maximum Zener Impedance (Note 4) IZT Diodes
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B2 Zener Diode marking CODE 1M b8 MARKING CODE zener 740 e UDZ27B marking code b6
Abstract: UDZ2V0B-UDZ56B SURFACE MOUNT ZENER DIODE Features UNDER DEVELOPMENT D E Dim A B SOD-323 Min , : 6.2V Zener = UDZ6V2B-7. Notes: 1. For Packaging Details, go to our website at http://www.diodes.com , Characteristics @ TA = 25°C unless otherwise specified Zener Voltage Range (Note 2) VZT @ IZT IZT mA 5 5 5 5 5 , Zener Impedance (Note 3) ZZT @ IZT W 1000 1000 1000 1000 1000 1000 1000 1000 1000 800 500 200 100 60 60 , B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ U1 2.020 Diodes
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Ym 3010 UDZ16B UDZ18B UDZ20B UDZ22B UDZ33B UDZ36B
Abstract: UDZ2V0B-UDZ56B SURFACE MOUNT ZENER DIODE UNDER DEVELOPMENT NEW PRODUCT Features ·  , '-7â' to the appropriate type number in Table 1 from Sheet 2 example: 6.2V Zener = UDZ6V2B-7. Notes: 1 , specified Zener Voltage Range (Note 2) VZT @ IZT Maximum Reverse Current (Note 2) Maximum Zener , UDZ15B BM 14.340 14.980 5 42 80 0.5 0.1 11.0 UDZ16B BN 15.850 , zener impedances (ZZT, ZZK) are measured by superimposing a minute alternating current on the regulated Diodes
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UDZ51B UDZ56B
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