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ZENER 27V 0,5W - - 750 (Aug 2016) Chip One Exchange Buy
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zener diode, t2

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Abstract: temperature change amount The actual Zener voltage temperature coefficient Z (ambient temperature T1 to T2 , context, NEC's RD Series of Zener diodes, which are used for voltage regulation applications such as , . This manual describes the characteristics of Zener diodes and noise clipping diodes and is designed as , OF ZENER DIODE AND NOISE CLIPPING DIODE 2.1 Zener Diode Definition A Zener diode has the , is reversed. (1) Zener breakdown occurring through quantum mechanical tunnel effect (2) Avalanche ... NEC
Original
datasheet

31 pages,
139.46 Kb

1SZ52 zener t5 diode zener b2 diode zener ZL 7 japanese diode manual tunnel diode General Electric zener diode B2 t5 zener B2 Zener d1472 zener diode numbering system RD zener diode lm 338 zener D14724EJ3V0UM00 zener diode t5 D14724EJ3V0UM00 DEI-602 D14724EJ3V0UM00 zener diode data manual D14724EJ3V0UM00 diode zener ZL 15 D14724EJ3V0UM00 zener diode B3 D14724EJ3V0UM00 D14724EJ3V0UM00 D14724EJ3V0UM00 TEXT
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Abstract: VVFB VP1 VP R3 C3 C9 C6 T2-1 VVFS U Mini DIP-IPM T1 VWFB VWFS V T2-2 V VP1 WP WP C10 UN VN W UN VN WN T2-3 W VN1 WN FO +5V +15V , -2 N1 Fig.4 Circuit schematic Note: Although there is no zener diode mounted to P-side three , recommend to add these zener diodes in actual system board. (3 / 4) (5) Parts list Table 1 Parts , Japan International U1ZB24 U1ZB24 24V 1W Zener Diode Toshiba C1 UPW1H220MDD UPW1H220MDD 22uF50V Al ... Powerex
Original
datasheet

4 pages,
261.49 Kb

snubber capacitor Nichicon Capacitor UP series zener 600v mini electrolytic C1608X7R1H102K zener diode, t2 Capacitor 600v RK73H1JTD10F Denko Nichicon Capacitor nichicon RC snubber ac motor PS21765 DIP-IPM ps21767 MINI DIP-IPM Mitsubishi ps21767 diode zener 600v 1a ZENER DIODE t2 TP42097-21 TEXT
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Abstract: 1N5913B 1N5913B THRU 1N5956B 1N5956B 3W SILICON ZENER DIODE VZ : 3.3 - 200 Volts PD : 3 Watts DO - 41 , 1N5913B 1N5913B THRU 1N5956B 1N5956B 3W SILICON ZENER DIODE ELECTRICAL CHARACTERISTICS (Rating at 25 °C ambient temperature unless otherwise specified) TYPE Nominal Zener Voltage VZ @ IZT IZT (V) (mA) ZZT @ IZT Maximum Zener Impedance ZZK @ IZK Maximum Reverse Leakage Current IR @ VR IZK (Ω) (Ω) (mA) (ÂuA) (V) Maximum DC Zener Current IZM (mA) 1N5913B 1N5913B 3.3 113.6 ... KD Diode
Original
datasheet

4 pages,
1009.19 Kb

1N5913B 1N5956B TEXT
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Abstract: CHARGE SOURCE T2 T1 PACK+ R4 R1 R2 150W DS2770 DS2770 VDD CC VIN VCH DQ , transistors T1 and T2, which the DS2770 DS2770 turns on and off as needed. 1 of 5 041502 AN201 AN201 Fast , TRICKLE CHARGING Trickle charging is gated by T2 and is current limited by R6. The value of R6 depends on , x R6 The T2 base current can be determined using Equation 1, so that it will operate in the saturated region. However, the b is less important for T2 due to the low trickle charge current, so a less ... Dallas Semiconductor
Original
datasheet

5 pages,
101.38 Kb

200w Transistor AN201 charge 6v battery DS2770 FMMT718 low drop 6V 1A 5.6v zener zener diode 4.4V transistor bt2 4403 transistor TEXT
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Abstract: COMCHIP SMD DIODE SPECIALIST Surface Mount Zener Diode CZRM27C3V6P CZRM27C3V6P THRU C200P C200P Features Low profile surface-mount package Zener and surge current specification Low leakage current Power , : 510-657-8671 · Fax: 510-657-8921 · www.comchiptech.com Page 1 COMCHIP Surface Mount Zener Diode , 1 18 0.06 0.11 Zener Mini-SMA CZRM27C27P CZRM27C27P 25.1 28.9 25 15 7 1 20 , Page 2 COMCHIP Surface Mount Zener Diode SMD DIODE SPECIALIST RATINGS AND CHARACTERISTIC ... Comchip Technology
Original
datasheet

3 pages,
52.81 Kb

12p smd 27p smd diode CZRM27C110P CZRM27C200P CZRM27C3V6P CZRM27C6V8P CZRM27C7V5P CZRM27C8V2P smd zener diode 6v 13.8 8w zener diode transistor 12p smd smd zener diode 5v C200P TEXT
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Abstract: . Diode Zener Diodes 1. Zener Diode Characteristics Generally, when a junction is reverse biased, a breakdown phenomenon appears abruptly at a certain voltage. This phenomenon is called "zener breakdown" or "avalanche breakdown". In silicon diodes the zener breakdown appears before 5 to 6 V and the avalanche breakdown afterwards. · Zener breakdown refers to the phenomenon whereby electrons pass through , Characteristics A typical zener diode voltage-current characteristic is shown in figure 1.1. There are ... Renesas Technology
Original
datasheet

69 pages,
548.86 Kb

Diode zener 3a zener diode, t2 zener diode numbering system 3b zener diode zener diode t5 smd zener diode code zener 2B3 Zener Diode marking 3a zener diode catalogue 2sc458 model Zener diode smd marking code 5t 7B2 zener diode H 48 zener diode smd glass diode color codes smd zener diode 5v zener diodes color coded smd zener diode color code smd zener color codes 2l TRANSISTOR SMD MARKING CODE smd glass zener diode color codes TEXT
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Abstract: temperature change amount The actual Zener voltage temperature coefficient Z (ambient temperature T1 to T2 , context, NEC's RD Series of Zener diodes, which are used for voltage regulation applications such as , . This manual describes the characteristics of Zener diodes and noise clipping diodes and is designed as , OF ZENER DIODE AND NOISE CLIPPING DIODE 2.1 Zener Diode Definition A Zener diode has the , is reversed. (1) Zener breakdown occurring through quantum mechanical tunnel effect (2) Avalanche ... Renesas Electronics
Original
datasheet

33 pages,
271.06 Kb

diode ZENER A1 NEC ZENER HS RD10E RD11E RD12E RD13E RD15E RD16E RD18E RD20E RD5.6E ty 612 zener diode, t2 zener diode catalogue nec zener zener diode numbering system RD zener diode DEI-602 NEC Zener diode RD3.0E diode zener ZL 15 TEXT
datasheet frame
Abstract: Diode Zener Diodes 1. Zener Diode Characteristics Generally, when a junction is reverse biased, a breakdown phenomenon appears abruptly at a certain voltage. This phenomenon is called "zener breakdown" or "avalanche breakdown". In silicon diodes the zener breakdown appears before 5 to 6 V and the avalanche breakdown afterwards. · Zener breakdown refers to the phenomenon whereby electrons pass through , Characteristics A typical zener diode voltage-current characteristic is shown in figure 1.1. There are ... Renesas Technology
Original
datasheet

68 pages,
581 Kb

Zener diode smd marking T4 TN SMD TRANSISTOR MARKING 1L Maple, ta11 smd zener color codes smd zener diode T4 zener diode 2b3 smd zener diode marking code 511 transistor 9015 c 2l TRANSISTOR SMD MARKING CODE Zener diode smd marking T4 SMD MARKING CODE QV zener JISC6484 HZT33 equivalent maple TA11 RD zener diode transistor smd 1Bp smd glass diode color codes TRANSISTOR SMD MARKING CODE 1Bp smd glass zener diode color codes TEXT
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Abstract: COMCHIP Surface Mount Zener Diode www.comchiptech.com CZRM27C3V6P CZRM27C3V6P THRU C200P C200P Features Low profile surface-mount package Zener and surge current specification Low leakage current Power , Surface Mount Zener Diode www.comchiptech.com CZRM27C6V8P CZRM27C6V8P THRU CZRM27C200P CZRM27C200P Application Case , CZRM27C24P CZRM27C24P 22.8 25.6 25 15 7 1 18 0.06 0.11 Zener Mini-SMA CZRM27C27P CZRM27C27P , Surface Mount Zener Diode www.comchiptech.com RATINGS AND CHARACTERISTIC CURVES CZRM27C6V8P CZRM27C6V8P THRU ... Comchip Technology
Original
datasheet

3 pages,
85.53 Kb

CZRM27C8V2P CZRM27C7V5P CZRM27C6V8P CZRM27C3V6P CZRM27C200P CZRM27C110P TEXT
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Abstract: 1N5221B 1N5221B - 1N5267B 1N5267B 500mW EPITAXIAL ZENER DIODE Features · · · · · 500mW Power Dissipation High , Characteristic Power Dissipation (Note 1) Zener Current (Note 1) Thermal Resistance, Junction to Ambient Air , 2.0 1.8 1.7 Maximum Zener Impedance ZZT @ IZT W 30 30 30 30 30 28 24 23 22 19 17 11 7.0 7.0 5.0 6.0 , +0.094 +0.095 +0.095 +0.096 +0.096 +0.097 +0.097 +0.097 +0.098 Zener Voltage Range (Note 2) VZ @ IZT , Temperature VZ, ZENER VOLTAGE (V) Fig. 2 Diode Capacitance vs Zener Voltage Tj = 25°C 1000 ... Diodes
Original
datasheet

3 pages,
64.08 Kb

DS18006 1N523 1N5221B 1N5267B TEXT
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Archived Files

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No abstract text available
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Texas Instruments 17/01/2012 347.26 Kb ZIP snvm010.zip
2SJ179-T1/T2   2SJ179-T1/T2 single more.  DESCRIPTION The 2SJ179-T1/T2, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching R DS(on)2 = 1.0 Ohm MAX.@V GS = -10V, I D = -0.5A Bidirectional zener
/datasheets/files/nec/mosfet/product/2sj179-t.htm
NEC 02/02/2000 6.93 Kb HTM 2sj179-t.htm
biassed. Turning on T2 causes Zener Z2 to clamp the IGBT gate voltage at 6V, limiting the collector off the switch, a pulse is applied to the diode D2 which turns on T2, which in turn discharges the gate of T1 and turns the device off. As T2 remains on, T1 cannot be accidentally turned on due to dV/dt effects, and so the gate of T2 is now behaving as a memory of the off state of T1. As clamped at 6V (the Zener diode voltage of Z2), limiting the collector current. Overcurrent is
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3703-v1.htm
STMicroelectronics 25/05/2000 17.9 Kb HTM 3703-v1.htm
Zener Z1, Z1 begins to conduct, turning on T2, and clamping the voltage at point P, causing D to become reverse biassed. Turning on T2 causes Zener Z2 to clamp the IGBT gate voltage at 6V, limiting the on T2, which in turn discharges the gate of T1 and turns the device off. As T2 remains on, T1 cannot be accidentally turned on due to dV/dt effects, and so the gate of T2 is now behaving as a memory an overcurrent is detected, the gate voltage is clamped at 6V (the Zener diode voltage of Z2
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3703.htm
STMicroelectronics 20/10/2000 18.38 Kb HTM 3703.htm
the gate through the zener diode. The resistance limits the charging current thus adjusting the , as the zener diode is reverse biased. -switching off requires the application of a negative pulse (OFF pulse) to overcome the zener voltage and discharge the gate Figure 2: 3.1 Drive Circuit simplified, consisting of a zener diode and a series resistor (see figure 2). 3.2 Digital controller off period of T1, to prevent spurious turn-on. T1 on T1 off T3 on T3 off T5 on T5 off T2
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3730-v1.htm
STMicroelectronics 25/05/2000 15.12 Kb HTM 3730-v1.htm
through the zener diode. The resistance limits the charging current thus adjusting the switching time. short circuit is applied across the primary transformer and the gate remains charged, as the zener overcome the zener voltage and discharge the gate Figure 2: 3.1 Drive Circuit capacitance. During this gate drive. The transformer secondary circuit is simplified, consisting of a zener diode and a off T5 on T5 off T2 T4 T6 Figure 3: Inverter pulse timing Figure 4: DC PM brushless motor drive bloc
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3730.htm
STMicroelectronics 20/10/2000 15.53 Kb HTM 3730.htm
Cable 2 Turns Thru Fair-rite Multi-aperture Core T2 UT141-25 UT141-25 MICRO COAX R.F. Transformer 1:4, 25 Ohm sides, er =4.8 T1 50 Ohm Flexible Coax Cable OD 0.06", 3" Long. Ferrite Core NEOSIDE T2 / T3 9:1 6.8 V Zener Diode L1 20 nH Inductor L2 70 nH Inductor L3 30 nH Inductor L4 10 nH Inductor L5 15 nH 0.06", 5" Long T2 / T3 9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1", 3.9". Ferrite Core NEOSIDE R7 3.3K Ohm / 5 W Resistor R8 15 Ohm / 1 W Resistor D1 6.8 V Zener Diode L1 10 nH Inductor L2 40 nH
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4847-v2.htm
STMicroelectronics 14/06/1999 12.29 Kb HTM 4847-v2.htm
Cable 2 Turns Thru Fair-rite Multi-aperture Core T2 UT141-25 UT141-25 MICRO COAX R.F. Transformer 1:4, 25 Ohm sides, er =4.8 T1 50 Ohm Flexible Coax Cable OD 0.06", 3" Long. Ferrite Core NEOSIDE T2 / T3 9:1 6.8 V Zener Diode L1 20 nH Inductor L2 70 nH Inductor L3 30 nH Inductor L4 10 nH Inductor L5 15 nH 0.06", 5" Long T2 / T3 9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1", 3.9". Ferrite Core NEOSIDE R7 3.3K Ohm / 5 W Resistor R8 15 Ohm / 1 W Resistor D1 6.8 V Zener Diode L1 10 nH Inductor L2 40 nH
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4847.htm
STMicroelectronics 20/10/2000 14.81 Kb HTM 4847.htm
Turns thru Fair-rite Multi-Aperture Core T2 R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D. Core NEOSIDE T2,T3 9:1Transformer, 16.5 Ohm Flexible Coax Cable 0.1", 3" Long T4,T5 4:1 Transformer, 25 3.3 K Ohm / 5 W Resistor D1 6.8 V Zener Diode L1 20 nH Inductor L2 70 nH Inductor L3 30 nH Inductor L4 Ohm Flexible Coax Cable OD 0.06", 5" Long T2,T3 9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1" Resistor R7 3.3 K Ohm / 5 W Resistor R8 15 Ohm / 5 W Resistor D1 6.6 V Zener Diode L1 10 nH Inductor L2 40
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6876.htm
STMicroelectronics 20/10/2000 14.59 Kb HTM 6876.htm
Core T2 R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D. 0.141[3.58] L = 5.90[149.86] L1 , sides, e r = 4.8 T1 50 Ohm Flexible Coax Cable OD 0.06", 3" Long. Ferrite Core NEOSIDE T2,T3 9 / 5 W Resistor D1 6.8 V Zener Diode L1 20 nH Inductor L2 70 nH Inductor L3 30 nH Inductor L4 10 sides, e r = 4.8 T1 50 Ohm Flexible Coax Cable OD 0.06", 5" Long T2,T3 9:1 Transformer, 25 Ohm Resistor D1 6.6 V Zener Diode L1 10 nH Inductor L2 40 nH Inductor L3 70 nH Inductor 11/12 SD2932 SD2932
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6876-v1.htm
STMicroelectronics 12/10/2000 13.79 Kb HTM 6876-v1.htm