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Part Manufacturer Description Datasheet BUY
LM431ACZ/LFT4 Texas Instruments Adjustable Precision Zener Shunt Regulator 3-TO-92 visit Texas Instruments
LM431ACZ/LFT3 Texas Instruments Adjustable Precision Zener Shunt Regulator 3-TO-92 visit Texas Instruments
LM431AIZ/LFT1 Texas Instruments Adjustable Precision Zener Shunt Regulator 3-TO-92 visit Texas Instruments
LM431CIZ/LFT1 Texas Instruments Adjustable Precision Zener Shunt Regulator 3-TO-92 visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil

zener DIODE marking A1

Catalog Datasheet MFG & Type PDF Document Tags

philips zener diode c24

Abstract: Zener diode smd marking code .18 270 Description Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Type number BZG01-C10 BZG01-C11 BZG01-C12 BZG01-C13 BZG01-C15 BZG01-C16
Philips Semiconductors
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philips zener diode c24 Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode M3D168 BZG01 DO-214AC MBL143 HTML04232003/BZG01-C10

HZU30L-1

Abstract: zener diode 332 HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0200Z Rev.2.00 Aug.18.2003 Features · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage and low zener impedance. · Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. · Ultra small Resin Package (URP) is suitable for surface , Tstg ­55 to +150 °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* Reverse
Renesas Technology
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HZU30L-1 zener diode 332 Zener Diode B1

361 Zener diode marking

Abstract: zener diode marking 333 HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0100Z Rev.1.00 Jun.05.2003 Features · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage and low zener impedance. · Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. · Ultra small Resin Package (URP) is suitable for surface , Tstg ­55 to +150 °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* Reverse
Renesas Technology
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361 Zener diode marking zener diode marking 333 HZU-L Series zener mark code A2

marking A3 Taiwan semiconductor

Abstract: REJ03G0043-0300Z HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features · · · · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. Ultra small Resin Package (URP) is suitable for surface , to +150 °C °C Electrical Characteristics (Ta = 25°C) Zener Voltage 1 VZ (V)* Type
Renesas Technology
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marking A3 Taiwan semiconductor B2 Zener Zener IT 243 A211-1 B1.66 a3 6 zener D-85622

ZENER DIODE marking l2

Abstract: AP209 , there is an integral Zener diode between VP and VN to suppress any voltage disturbance due to these ESD , high data rate signals Zener diode protects supply rail and eliminates the need for external by-pass , =25°C VF ESD Diode Forward Voltage IF = 20mA; TA=25°C VZBD Zener Clamp Reverse Breakdown , being protected is: The CM1209 has an integrated Zener diode between VP and VN. This greatly reduces , CM1209 4,6 & 8 Channel ESD Protection Arrays with Zener Supply Clamp Features Product
California Micro Devices
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MSOP-10 ZENER DIODE marking l2 AP209 CM1209-08MR Marking h 498 CM-120 IEC61000-4-2

CM1209-08MR

Abstract: CM1209-06MS , there is an integral Zener diode between VP and VN to suppress any voltage disturbance due to these ESD , of ESD protection for high data rate signals Zener diode protects supply rail and eliminates the , =25°C VF ESD Diode Forward Voltage IF = 20mA; TA=25°C Zener Clamp Reverse Breakdown Voltage At , The CM1209 has an integrated Zener diode between VP and VN. This greatly reduces the effect of supply rail inductance L2 on VCL by clamping VP at the breakdown voltage of the Zener diode. However, for
California Micro Devices
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CM1209-06MS 0137 0904

SOT-363 A1 marking codes

Abstract: Zener diode marking codes Silicon-Based Technology Corp. Small-Signal Zener Diodes QZX363C5V6 ­ QZX363C20 Features and Advantages: Surface mount package for automatic assembly process High precision Zener voltage (VZ) (Note3.) Small Zener diode dynamic impedance(ZZT) Low standby reverse current(VR) (Note4.) Very high , otherwise specified) Zener Part Type Marking Codes Voltage Max. Zener Impedance Vz@IZT , : See Cathode band in device configurations below Package outline and dimensions (see below) Marking &
Silicon-Based Technology
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QZX363CXVX QZX363C6V8 QZX363C12 QZX363C15 SOT-363 A1 marking codes Zener diode marking codes MIL-STD-202 J-STD-020C

TBZ363C20V8

Abstract: TBZ363C5V5 Silicon-Based Technology Corp. Small-Signal Zener Diodes TBZ363C5V5 ­ TBZ363C20V8 Features and Advantages: Surface mount package for automatic assembly process High precision Zener voltage (VZ) (Note3.) Small Zener diode dynamic impedance(ZZT) Low standby reverse current(VR) (Note4.) Very high , : (@TA=25°C unless otherwise specified) Zener Part Type Marking Codes Voltage Max. Zener Impedance , : See Cathode band in device configurations below Package outline and dimensions (see below) Marking &
Silicon-Based Technology
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TBZ363C6V4 TBZ363C7V0 Zener Diode A2 marking code a2 TD5 marking sot363 marking codes 20 TBZ363CXVX TBZ363C20

B2 Zener

Abstract: A2 9 zener diode HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A(Z) Rev 1 November 1996 Features · · · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 5.2V through 38V of zener voltage , Tstg -55 to +175 °C Electrical Characteristics (Ta = 25°C) Zener Voltage Reverese Current
Hitachi Semiconductor
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HZ30-2L A2 9 zener diode zener mark code C1 zener diode B3 HZ16L Hitachi DSA00776 zener diode c2 DO-35 HZ36-3L HZ36-2L HZ24-2L HZ20-1L
Abstract: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI Features · · · ADE-208-118A(Z) Rev 1 November 1996 Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 5.2V through 38V of zener , Zener voltage classification symbol equal to 81 or B3. Expanded drawing of marking -
OCR Scan
HZ11L HZ22L HZ24L HZ27L HZ30L HZ33L

do-34 302 zener diode

Abstract: 5.6 B1 zener diode HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A(Z) Rev 1 Dec. 1996 Features · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. · Wide spectrum from 5.2V through 38V of zener voltage provide , °C) Zener Voltage Reverese Current Dynamic Resistance Test Condition IR (µA) VZ (V)*1 Test
Hitachi Semiconductor
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do-34 302 zener diode 5.6 B1 zener diode A2 zener diode HZS6A2L HZS7L HZS24L HZS36-3L HZS36-2L HZS24-2L HZS20-2L HZS16-2L HZS12B2L

6.3 B1 zener diode

Abstract: zener diode B3 HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A(Z) Rev 1 Features · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for , Characteristics (Ta = 25°C) Zener Voltage VZ (V)*1 Type HZS6L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS7L A1 A2 A3 B1 , . Zener voltage classification symbol equal to B1 or B3. B 7 2 Expanded drawing of marking 6
Hitachi Semiconductor
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6.3 B1 zener diode 9.1 b3 a3 7 zener Hitachi DSA002786 HZS7L diode diode ZENER A2 6 HZS11L HZS12L HZS30-2L

12w sot 23-3

Abstract: CMSZDA33V Central CMSZDA3V0 THRU CMSZDA33V TM Semiconductor Corp. DUAL ZENER DIODE 3.0 VOLTS THRU 33 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZDA3V0 Series Silicon Dual Zener Diode is , MAXIMUM ZENER VOLTAGE TEMPERATURE COEFFICIENT IR @ VR MARKING CODE VZ mA mA , CMSZDA3V0 THRU CMSZDA33V Semiconductor Corp. DUAL ZENER DIODE 3.0 VOLTS THRU 33 VOLTS ELECTRICAL , VR MAXIMUM ZENER IMPEDANCE VZ MARKING CODE mA mA µA VOLTS %/OC
Central Semiconductor
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CMSZDA15V CMSZDA16V CMSZDA18V CMSZDA20V 12w sot 23-3 zener DIODE marking A1 12w SOT 323 zener diode a2 11 marking CODE Z2Z 12w marking code sot 23 CMSZDA22V CMSZDA24V

kpc 45 94v-0

Abstract: KPC 45 94V BZX84C2V4TS - BZX84C39TS NEW PRODUCT TRIPLE SURFACE MOUNT ZENER DIODE ARRAY Features · · Zener Voltages from 2.4 - 39V Three Isolated Diode Elements in a Single Ultra-Small Surface Mount , Zener Voltage Range (Note 2) Type Number Marking Code Maximum Zener Impedance (Note 3) VZ , Orientation: See Diagram Marking: Date Code and Marking Code (See Page 2) Weight: 0.006 grams (approx.) A1 A2 B C A3 Min Max 0.10 0.30 B C3 KXX YM Mechanical Data · · ·
Diodes
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J-STD-020A BZX84C6V2TS-7 kpc 45 94v-0 KPC 45 94V c27 zener diode marking 82 sot363 BZX84C2V7TS BZX84C3V0TS 3000/T DS30187

CM1293-04SO

Abstract: A1 D036 pulse to either the positive (VP) or negative (VN) supply rail. A Zener diode is embedded between VP , Zener diode protects supply rail and eliminates the need for external by-pass capacitors Each I/O pin , VP at the breakdown voltage of the Zener diode. However, for the lowest possible VCL, especially when , drastically increased negative voltage on the line being protected. The CM1293 has an integrated Zener diode , · · The CM1293 family of diode arrays has been designed to provide ESD protection for
California Micro Devices
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CM1293-04SO A1 D036 CM1293-02SR D032 D033 sot23-5 footprint CM1293-04MS/MR CM1293-08MS/MR
Abstract: pulse to either the positive (VP) or negative (VN) supply rail. A Zener diode is embedded between VP , typical Zener diode protects supply rail and eliminates the need for external by-pass capacitors Each I , VP at the breakdown voltage of the Zener diode. However, for the lowest possible VCL, especially when , Zener diode between VP and VN. This greatly reduces the effect of supply rail L2 VP POSITIVE , â'¢ â'¢ The CM1293 family of diode arrays has been designed to provide ESD protection for California Micro Devices
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marking code 9c diode

Abstract: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI Features ADE-208-121A(Z) Rev 1 Dec. 1996 · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. · Wide spectrum from 5.2V through 38V of zener voltage , °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)*1 Type Grade Min Max Reverese
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OCR Scan
marking code 9c diode HZS18L HZS20L HZS22L HZS27L HZS30L HZS33L
Abstract: CLL4728A THRU CLL4764A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON ZENER DIODE 1 WATT, 3.3 THRU 100 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4728A Series Silicon Zener Diode is a high quality voltage regulator for use in surface mount industrial, commercial, entertainment and computer applications. MARKING: CATHODE BAND MELF CASE MAXIMUM RATINGS: (TA=25 °C , 5.0 22.8 150 R4 (21-April 2010) CLL4728A THRU CLL4764A SURFACE MOUNT SILICON ZENER DIODE -
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CLL4729A CLL4730A CLL4731A CLL4732A CLL4733A CLL4734A
Abstract: pulse to either the positive (VP) or negative (VN) supply rail. A Zener diode is embedded between VP , typical Zener diode protects supply rail and eliminates the need for external by-pass capacitors Each I , VP at the breakdown voltage of the Zener diode. However, for the lowest possible VCL, especially when , Zener diode between VP and VN. This greatly reduces the effect of supply rail L2 POSITIVE SUPPLY , Description â'¢ â'¢ The CM1293 family of diode arrays has been designed to provide ESD protection for California Micro Devices
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marking L2 SOT23 6

Abstract: Marking D2 SOT23-6 capacitance 1.5pF typical Zener diode protects supply rail and eliminates the need for external by-pass , negative ESD current pulse to either the positive (VP) or negative (VN) supply rail. A Zener diode is , VP at the breakdown voltage of the Zener diode. However, for the lowest possible VCL, especially when , Zener diode between VP and VN. This greatly reduces the effect of supply rail L2 VP POSITIVE , Pin 1 Marking E1 E 1 2 3 b SIDE VIEW D A A1 END VIEW 0.95 BSC 1.90 BSC 0.30 0.60
California Micro Devices
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marking L2 SOT23 6 Marking D2 SOT23-6 SOT23-6 MARKING 310 D038
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