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Catalog Datasheet MFG & Type PDF Document Tags
Abstract: -5=1.0×0.75×0.062 in. 2. Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width300s; Duty Cycle2.0%. Page 0 of 4 , ns 4. Pulse Test: Pulse Width300s; Duty Cycle2.0%. Page 1 of 4 *2005 2 * All Rights Reserved Fenghua Advanced Technology
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FHS4403 100MH
Abstract: Width300s; Duty Cycle2.0%. Page 0 of 6 *2005 2 * All Rights Reserved 18 TEL:0758-2865088 2865091 , ns 4. Pulse Test: Pulse Width300s; Duty Cycle2.0%. Page 1 of 6 *2005 2 * All Rights Reserved Fenghua Advanced Technology
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FHS3904
Abstract: Width300s; Duty Cycle2.0%. Page 0 of 5 *2005 2 * All Rights Reserved 18 TEL:0758-2865088 , tr ts tf - - - - 35 35 225 75 ns ns 4. Pulse Test: Pulse Width300s; Duty Fenghua Advanced Technology
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FHS3906
Abstract: 1. FR-5=1.0×0.75×0.062 in. 2. Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width300s; Duty , ns 4. Pulse Test: Pulse Width300s; Duty Cycle2.0%. Page 1 of 6 *2005 2 * All Rights Reserved Fenghua Advanced Technology
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FHS4401
Abstract: sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300s - pulse width limited by , /dt= 100A/s NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2 Zetex Semiconductors
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ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC 6A25D D-81673
Abstract: implied. 2. Pulse Test : Pulse width300s, Duty cycle2% 3. Pulse width limited by TJ(MAX) Drain-Source , Test : Pulse width300s, Duty cycle2% Junction to Ambient (Note) MIN TYP JA MAX 110 78 Unisonic Technologies
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UT8205A UT8205AL-S08-R UT8205AG G2DG1 MOSFET TSSOP-8 UT8205AL-AG6-R UT8205AG-AG6-R UT8205AG-S08-R UT8205AL-P08-R
Abstract: PCB, D=0.02, pulse width=300s - pulse width limited by maximum junction temperature. (d) For a dual , ) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are Zetex Semiconductors
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Abstract: . Pulse width=300s. Duty cycle 2%Spice parameter data is available upon request for these devices Tel , t(OFF) 1300 *Measured under pulsed conditions. Pulse width=300s. Duty cycle Tel -
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FT717 FT618 FT619 FT624 FT625 fT723 BR-C FT617 FT718 FT720
Abstract: . 3. Pulse Width300s; Duty Cycle2.0%. 12 Type General Purpose Transistors NPN Silicon , . Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width300s; Duty Cycle2.0%. 13 Type General , =10Vdc, IE=0,f=1.0MHz FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width300s , =1.0MHz FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width300s; Duty Cycle2 , . Pulse Width300s; Duty Cycle2.0%. 26 High Voltage Transistors NPN Silicon (FHTA44) MAXIMUM Fenghua Advanced Technology
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FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FH9014 FHT9018 FHT1815G FHT807-40 FHT817-16 FHT817-25 FHT20
Abstract: Reverse Transfer Capacitance CRSS Note : 1. Pulse Test: Pulse width300s, Duty Cycle2%. 2. MOSFET , Charge QRR TJ = 25°C, ISD = 8.0A, dISD/dt = 100A/s 2 4.6 8.2 C Notes: 1. Pulse Test: Pulse width300s Unisonic Technologies
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UF840 UF840-TA3-T UF840L-TA3-T UF840-TF3-T UF840-TQ2-T MOSFET 400V TO-220 TQ2 rohs UF840L UF840G UF840G-TA3-T
Abstract: 1.0MHz Reverse Transfer Capacitance CRSS Note : 1. Pulse Test: Pulse width300s, Duty Cycle2%. 2. MOSFET , 8.0A, dISD/dt = 100A/s 2 4.6 8.2 C Notes: 1. Pulse Test: Pulse width300s, Duty Cycle2%. 2. Modified Unisonic Technologies
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N-Channel mosfet 400v to220 specifications of power mosfet UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840G-TF3-T
Abstract: FR4 PCB measured at t 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300s - , under pulsed conditions. Width=300s. Duty cycle 2% . () Switching characteristics are independent of Zetex Semiconductors
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Abstract: Capacitance CRSS NOTE : 1. Pulse Test: Pulse width300s, Duty Cycle2%. 2. MOSFET Switching Times are , Test: Pulse width300s, Duty Cycle2%. 2. Modified MOSFET symbol showing the integral reverse P-N Unisonic Technologies
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UF830 UF830L-TN3-R uf830l RGS12 5V GATE TO SOURCE VOLTAGE MOSFET mosfet TEST RGS-12 UF830L UF830-TA3-T UF830L-TA3-T UF830-TF3-T UF830L-TF3-T
Abstract: . Pulse width=300^s. Duty cycle < 2% Spice parameter data is available upon request for this device T -
OCR Scan
BFQ31 BFQ31A BFQ31AR MI350 bfq31r BFQ31R
Abstract: 15.7KHz :2N5088 :2N5089 %Pulse Test: Pulse Width300s, Duty Cycle2% 3 2 dB dB 2N5088/5089 Samsung Electronics
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2N5088 equivalent 2n5088 transistor transistor 2N5088 transistor amplifier 5v to 15v 2N5089 equivalent 5089 silicon npn transistor 2N4403 2N4402
Abstract: Capacitance (note 2) Notes: 1.Pulse Test-Pulse width=300S, Duty Cycle 2%. 2.Measured at 1MHz and applied Promax-Johnton
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1N5817/1N5818/1N5819 DO-41 UL94V-0 MIL-STD-202 1N5817 1N5818
Abstract: VBE(sat) 1 VBE1 fT Cob Measured under pulsed conditions, Pulse width=300s, Duty cycle2 -
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fmmt491 Marking 491 FMMT491 OT-23
Abstract: * Pulse Test: Pulse Width300s, Duty Cycle2% Note. Package Mark information. R hFE2 Semihow
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KSH772 ksh77 KSH8 ksh882 KSH882
Abstract: =1.0A) Typical Junction Capacitance (note 2) Notes: 1.Pulse Test-Pulse width=300S, Duty Cycle 2%. Tj,Tstrg Promax-Johnton
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1N5819 1N5819 package datasheets diode 1n5818 datasheets diode 1n5819 1N581
Abstract: Capacitance (note 2) Notes: 1.Pulse Test-Pulse width=300S, Duty Cycle 2%. 2.Measured at 1MHz and applied Promax-Johnton
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PJ5822 pj5822- PJ5820/PJ5821/PJ5822 DO-201AD DO-201 PJ5820 PJ5821
Abstract: . 3. Pulse Width300s; Duty Cycle2.0%. 12 Type General Purpose Transistors NPN Silicon , . Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width300s; Duty Cycle2.0%. 13 Type General , =10Vdc, IE=0,f=1.0MHz FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width300s , =1.0MHz FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width300s; Duty Cycle2 , . Pulse Width300s; Duty Cycle2.0%. 26 High Voltage Transistors NPN Silicon (FHTA44) MAXIMUM Advanced Analogic Technologies
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AAT4681 TDFN-10L AAT4681IDE-T1 SMPS circuit for charging 6v battery AAT4681IDE 10L5 AAT4681IDE-1-T1 AAT4681/-1
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