NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: = Pb-Free Pack- ORDERING INFORMATION Device Package Shipping BUL45D2 BUL45D2 TO-220 50 , transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC -VCE , BUL45D2 BUL45D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter , BiPolar transistor (H2BIP). High dynamic characteristics and lot-to-lot minimum spread (╠150 ns on , Wheeling Diode ╥ Fully Characterized and Guaranteed Dynamic VCE(sat) ╥ "6 Sigma" Process Providing Tight ... | Original |
11 pages, |
MUR105 MTP8P10 MTP12N10 MPF930 MJE210 BUL45D2G BUL45D2 BUL45D2 abstract |
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| Abstract: , 1200 Volt IGBT and Rectifier Co�packaged TMOS V D2PAK, TO�220 N & P�Channels Including Logic Level , Ballast Transistor 1000 V, 2A Ballast Transistor Now Now Now Now Now Now TO�220 TO�220 , Now Now Now TO�220 TO�220 MJE18204 MJE18204 MJE18206 MJE18206 MJE18604D2 MJE18604D2 MJE18605D2 MJE18605D2 1200 V, 5A Ballast , each division considers key to their product portfolio and recommends for new design. Information , �247 TO�220 TO�264 TO�247 TO�264 TO�264 TO�247 TO�247 TO�264 TO�264 Data Sheet Eng. Samples ... | Original |
24 pages, |
MICROWAVE TRANSISTOR MRF9242 dual channel opto triac MRF1510 SILICON CONTROLLED RECTIFIERS 2AMP 600A thyristor scr tv uhf exciter module OPTO SCR blocking Voltage 1600 Volt MBD770 MHW910 MRF9282 solid state 220 volt stabilizer circuit datasheet abstract |
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| Abstract: 2SA2069 2SA2069, 2SA2059 2SA2059 TPCP8F01 TPCP8F01 General-Purpose Load Switches A Low VCE(sat) PNP transistor and an S-MOS to , .to shib a .co.jp /en g Power Transistors for Switching Power Supplies Low VCE(sat) Transistor , Toshiba has developed IS packages which make easy to isolate a device and heatsink. The entire TO-220 packages are available in the IS type as standard. Products in the TO-126 and TO-220 packages are , 220 W. A wider selection of packages, including the TO-3P(N) and TO-3P(L), is available. Switching ... | Original |
43 pages, |
SCR 131- 6 WJ 60 2SC2383 equivalent Toshiba 2SC3281 2sc5200 amplifier circuit diagram 2sc5200 amplifier circuit transistor H2A smd 2SA1930 2sc5171 tr 2sc3280 2sC5200, 2SA1943, 2sc5198 2sc5200 amplifiers circuit diagram tr 2sc5200 H2A transistor SMD datasheet abstract |
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| Abstract: Control IC Control IC General-Purpose Load Switches A Low VCE(sat) PNP transistor and an S-MOS to , selection of packages, including the TO-3P(N) and TO-3P(L), is available. Power Transistor Power , transistors, Toshiba provides the following packages to meet manufacturers' needs. Low VCE(sat) Transistor , TO-220NIS PS-8 V Transistor + S-MOS TO-3P(N) SMV TO-3P(N)IS TO-3P(L) PW-Mini W 2 in 1 NPN(or , Example Application Circuits Package Lineup Low VCE(sat) PNP and NPN transistors are housed in a ... | Original |
39 pages, |
2SC5200 2SC3665 equivalent tr 2sc5200 2SC6142 3 phase igbt INVERTER ac motor TTC013 TTA004 2SA1301 TOSHIBA TTC011 2SA1962 equivalent 2sc5200 amplifier circuit smd transistor h2a 2sC5200, 2SA1943 datasheet abstract |
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| Abstract: RANGE Frequency: 0.05 to 5.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 3 mA to 10 mA Date: 5/29/96 , SILICON TRANSISTOR NE681 NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · HIGH , use a single matching point to simultaneously achieve both low noise and high gain. MSG 20 , Gain and Maximum Available Gain, GA, MSG, MAG (dB) Minimum Noise Figure, NF min (dB) VCE = 3 V, IC = 5 mA 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE) NOISE FIGURE, GAIN MSG AND ... | Original |
21 pages, |
S21E 2SC5007 2SC5012 epitaxial micro-x NE AND micro-X NE681 NE68100 NE68118 NE68118-T1-A NE68119 NE68130 2SC4227 NE68135 NE681 abstract |
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| Abstract: to 5.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 3 mA to 10 mA Date: 5/29/96 Note: 1. This nonlinear , NPN SILICON HIGH FREQUENCY TRANSISTOR · LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz · HIGH , , IC = 5 mA MSG 20 3.0 MAG 10 Associated Gain, Maximum Stable Gain and Maximum , REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 8 V, IC = 20 mA , damage. 2. TJ for NE68135 NE68135 and NE68100 NE68100 is 200°C. 3. Maximum storage temperature for the NE68135 NE68135 is -65 to ... | Original |
20 pages, |
common emitter bjt NE681 NE681 abstract |
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| Abstract: NPN SILICON RF TRANSISTOR NE856 NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES , cal a Ple ils: a det 5635 N E 8 5 6 39 R NE8 · LOW COST NEC's NE856 NE856 series of NPN epitaxial , , high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 NE856 , ) NE85600 NE85600 NOISE FIGURE AND GAIN vs. FREQUENCY 1.5 1.0 0.4 0.5 1.0 2 3 4 5 33 (SOT , NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 20 mA ... | Original |
26 pages, |
2SC4226 2SC5006 2SC5011 mje 1303 NE AND micro-X NE856 NE85618 NE85619 NE85630 NE85632 NEC NE85635 NE85600 NEC 2501 LE 737 transistor NEC b 882 p NE856 abstract |
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| Abstract: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 NE681 SERIES FEATURES · HIGH GAIN BANDWIDTH PRODUCT , amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 , ) VCE = 3 V, IC = 5 mA 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE) NOISE FIGURE, GAIN , NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS fT Gain Bandwidth Product at VCE = 8 V, IC = 20 , 50 0.27 0.18 2000 1.82 VCE = 3 V, IC = 5 mA VCE = 8 V, IC = 7mA 500 1.00 19.00 ... | Original |
20 pages, |
S21E 2SC5007 2SC5012 9011 npn bjt 522 BJT IC Vce NE AND micro-X NE681 NE68100 NE68118 NE68119 2SC4227 BJT BF 167 NE68135 NE68130 datasheet abstract |
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| Abstract: RANGE Frequency: 0.05 to 5.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 3 mA to 10 mA Date: 5/29/96 , NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 NE681 SERIES FEATURES · HIGH GAIN BANDWIDTH , amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 , , MSG, MAG (dB) Minimum Noise Figure, NF min (dB) VCE = 3 V, IC = 5 mA 18 (SOT 343 STYLE) 19 , EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 8 ... | Original |
20 pages, |
transistor KF 507 2SC5007 2SC5012 NE AND micro-X NE681 NE68100 NE68118 NE68119 NE68130 S21E 2SC4227 682 MARKING SOT-23 kf 203 transistor NE681 abstract |
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| Abstract: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 NE681 SERIES FEATURES · HIGH GAIN BANDWIDTH PRODUCT , applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 NE681 , Stable Gain and Maximum Available Gain, GA, MSG, MAG (dB) Minimum Noise Figure, NF min (dB) VCE = , NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS fT Gain Bandwidth Product at VCE = 8 V, IC = 20 , 0.27 2000 1.82 VCE = 3 V, IC = 5 mA VCE = 8 V, IC = 7mA 500 1.00 19.00 0.37 43 ... | Original |
20 pages, |
S21E 2SC5007 2SC5012 bjt 522 DATASHEET OF BJT 547 epitaxial micro-x MICROWAVE TRANSISTOR NE AND micro-X NE681 NE68100 NE68118 NE68119 NE68130 RF TRANSISTOR NPN MICRO-X datasheet abstract |
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| 0 /models/bc847bpn_3.html Model : BC847BPN BC847BPN BC847BPN BC847BPN 3 BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN Complementary NPN and PNP Transistors FIGURE MAX dB 10 Local oscillator buffer and prescaler Supply current mA 70 One 5 1 0 /catalog .2 Gp min f min dB 16.5 DESCRIPTION Cascade Amps S11 10.0 f max ?14 Gp typ f min 9 1 0 /catalog /9/F1 ON-CHIP VOLTAGE MULTIPLIER LCD VOLTAGE V op max V 9 LOGIC VOLTAGE RANGE V 1.5 to 5.5 MATRIX Gain dB 5 GHz 0.88 V s V 3.0 Category MMIC amplifiers and 24 1 0 /catalog/parametrics/34.html www.datasheetarchive.com/files/philips/search/docindex-v2.txt |
Philips | 14/02/2002 | 998.47 Kb | TXT | docindex-v2.txt |
| 141 1 0 /catalog/appnotes/30924.html Applicationnotes for Transistor wideband NPN up to 10 GHz Title BUJ100 BUJ100 BUJ100 BUJ100: Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all TRIACS: Three quadrant triacs bring major benefits to OEMs 1999-05-17 AN SM T AND T: Surface Mounted 21 1 major benefits to OEMs 1999-05-17 AN SM T AND T: Surface Mounted 38 1 0 /catalog/appnotes/27958.html shifters Title Date AN240 AN240 AN240 AN240: Interfacing 3 Volt and 5 Volt Applications 130 1 0 /catalog/appnotes/29483.html www.datasheetarchive.com/files/philips/search/docindex.txt |
Philips | 25/04/2003 | 954.24 Kb | TXT | docindex.txt |
| -04-07 209 1 0 /catalog/appnotes/30919.html Applicationnotes for Transistor wideband NPN up to 3.5 GHz Title /appnotes/19809.html Applicationnotes for NPN Title Date AN10117 AN10117 AN10117 AN10117 1.pdf: Medium Power Transistors and Rectifiers Applicationnotes for Transistor wideband NPN up to 6 GHz Title Date AN97039 AN97039 AN97039 AN97039 1.pdf: Video amplifier board with TDA /appnotes/30924.html Applicationnotes for Transistor wideband NPN up to 10 GHz Title Date 1890MHZ 1890MHZ 1890MHZ 1890MHZ.pdf: 1890MHz low 1 0 /catalog/appnotes/30925.html Applicationnotes for Transistor wideband NPN up to 25 GHz Title www.datasheetarchive.com/files/philips/search/docindex-v1.txt |
Philips | 16/06/2005 | 2589.32 Kb | TXT | docindex-v1.txt |