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ISL12008IB8Z-T Intersil Corporation I2C Real Time Clock with Battery Backup Low Power RTC with Battery ReSeal™ Function; SOIC8; Temp Range: -40° to 85°C
ISL12008IB8Z Intersil Corporation I2C Real Time Clock with Battery Backup Low Power RTC with Battery ReSeal™ Function; SOIC8; Temp Range: -40° to 85°C
AMC1200BDWV Texas Instruments 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105
LMR12007YMKX Texas Instruments 750mA Load Step-Down DC/DC Regulator in Thin SOT23 Package 6-SOT-23-THIN -40 to 125
CC1200RHMR Texas Instruments Low Power, High Performance RF Transceiver 32-QFN -40 to 85
LMR12007YMK Texas Instruments 750mA Load Step-Down DC/DC Regulator in Thin SOT23 Package 6-SOT-23-THIN -40 to 125

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vce 1200 and 5 amps npn transistor to 220 pack

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: vebo MJE 18204 M JF18204 POW ER TRANSISTORS 5 A M PERES 1200 VOLTS 35 and 75 WATTS · MJE18204 MJF18204 Unit Vdc Vdc Vdc Vdc Ado CASE 221A -06 TO-220AB 600 1200 1200 10 c 10 'C 'CM , application specific state-of-the-art die dedicated to the electronic ballast ("light ballast") and power supply applications. Improved Global Efficiency Due to Low Base Drive Requirements: - High and Flat DC , Parametric Distributions · Two Package Choices: Standard TO-220 or Isolated T 0-220 MAXIMUM RATINGS Rating -
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JE182 MJE/MJF18204 AN1040
Abstract: IGBT 25 Amp, 1200 Volt IGBT and Rectifier Co­packaged TMOS V D2PAK, TO­220 N & P­Channels Including , Ballast Transistor 1000 V, 2A Ballast Transistor Now Now Now Now Now Now TO­220 TO­220 , Now Now Now TO­220 TO­220 MJE18204 MJE18206 MJE18604D2 MJE18605D2 1200 V, 5A Ballast , each division considers key to their product portfolio and recommends for new design. Information , TO­247 TO­220 TO­264 TO­247 TO­264 TO­264 TO­247 TO­247 TO­264 TO­264 Data Sheet Eng Motorola
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TRANSISTOR MOTOROLA MAC 223 MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit
Abstract: 0 or Isolated T 0-2 20 MJE18204 MJF18204 POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS , Sheet SWITCHMODETM NPN Bipolar Power TVansistor for Electronic Light Ballast and Switching Power , electronic ballast ("light ballast") and power supply applications. · Improved Global Efficiency Due to Low , MJF18204 Unit Vdc Vdc Vdc Vdc Ade CASE 221A-06 TO-220AB 600 1200 1200 10 c 10 Ade Volts ·Total , TJ ' Tstg -6 5 to 150 THERMAL CHARACTERISTICS Rating Thermal Resistance - Junction to Case - -
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motorola to-220 motorola transistor number 18 MJE18204/D 2PHX34557C-0
Abstract: " Philosophy Provides Tight and Reproducible Parametric Distributions · Two Package Choices: Standard TO-220 or , °C Operating and Storage Temperature Watt W /°C °C T j. Tstg - 6 5 to 150 = THERMAL , temperature and second break down. Safe operating area curves indicate lc~VCE limits of the transistor that , Sheet SWITCHMODETM NPN Bipolar Power Ttansistor for Electronic Light Ballast and Sw itching Power , electronic ballast ("light ballast") and power supply applications. · Improved Global Efficiency Due to Low -
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SXA nippon MJE18206/D MJE/MJF18206 JE18206 JF18206 2PHX34558C
Abstract: , smart grid, or ignition switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. Equiv. RCS(ON , 34. TO-220, MOLDED, 3-LEAD, FULL PACK EIAJ SC91, STRAIGHT LEAD Package drawings are provided as a , FJPF2145 ESBCâ"¢ Rated NPN Power Transistor ESBC Features (FDC655 MOSFET) Description VCS , large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The Fairchild Semiconductor
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Abstract: ") and power supply applications. Improved Global Efficiency Due to Low Base Drive Requirements: - High , VCES vebo MJE 18206 M JF18206 POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS · MJE18206 MJF18206 Unit Vdc Vdc Vdc Vdc Ade CASE 221A -06 TO-220AB 600 1200 1200 10 8 16 ic 'CM , - 6 5 to 150 THERMAL CHARACTERISTICS Rating Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8' from Case for 5 Seconds Symbol ReJC -
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Abstract: Switches A Low VCE(sat) PNP transistor and an S-MOS to drive it are housed in a single package. This is , .to shib a .co.jp /en g Power Transistors for Switching Power Supplies Low VCE(sat) Transistor , Toshiba has developed IS packages which make easy to isolate a device and heatsink. The entire TO-220 packages are available in the IS type as standard. Products in the TO-126 and TO-220 packages are , 220 W. A wider selection of packages, including the TO-3P(N) and TO-3P(L), is available. Switching Toshiba
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smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 BCE0016C E-28831 BCE0016D
Abstract: Control IC Control IC General-Purpose Load Switches A Low VCE(sat) PNP transistor and an S-MOS to , selection of packages, including the TO-3P(N) and TO-3P(L), is available. Power Transistor Power , transistors, Toshiba provides the following packages to meet manufacturers' needs. Low VCE(sat) Transistor , Example Application Circuits Package Lineup Low VCE(sat) PNP and NPN transistors are housed in a , ) IB (mA) (MHz) VCE (V) IC (A) 1 200 5 10 m 80 to 240 5 10 m 1 Toshiba
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2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent 2SC2383 equivalent 2SC4793 2sa1837 2SA1962 equivalent
Abstract: , differentiated by power, security, reliability and performance to expand our leadership position in high-value , central office to the enterprise and the home, and to a broad array of network devices. Microsemi also , for applications ranging from industrial control to machine-to-machine (M2M) and products Power , Medical Discrete Components 66 To explore the entire portfolio of Microsemi products and for updated , 181 182 184 186 188 200 201 To explore the entire portfolio of Microsemi products and for Microsemi
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LE79Q2281 Dimming LED aplications Dimming LED Driver aplications GC4600 LED Driver aplications PIONEER mos car amplifier ic CATALOG
Abstract: amps and 2 comparators in a single package 0 to +70 DIP­14 0.001 30 0.0001 2.0 k 3.0 1000 ±1.5 to ±7.5 or 3.0 to 15 This device contains 2 op amps and 2 comparators in a , technologies, Analog circuit design techniques and processes have been continually refined and updated to , been refined to include higher current and voltage levels, low dropout regulators, CMOS technology, and more precise three­termi- nal fixed and adjustable voltages. The power area continues to expand ON Semiconductor
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transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR SG388/D
Abstract: = Pb-Free Pack- ORDERING INFORMATION Device Package Shipping BUL45D2 TO-220 50 , transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC -VCE , BUL45D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter , BiPolar transistor (H2BIP). High dynamic characteristics and lot-to-lot minimum spread (±150 ns on , Wheeling Diode · Fully Characterized and Guaranteed Dynamic VCE(sat) · "6 Sigma" Process Providing Tight ON Semiconductor
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BUL45D2G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 BUL45D2/D
Abstract: the SOT-223 lead fram e to accom modate the much larger Power Transistor chip. Central's CZT2955 and , 2.0 Amps. The space formerly required for 2.0 Amps, can now handle 3.0 Amps, and that for 3.0 Amps , provides a 44% savings in weight and 15% savings in height as compared to the MELF). See page 322. " , Diodes In addition to the BAS28 and BAS56 Switching Diodes, Schottky and High Voltage Switching Diodes , , and we strive to accomplish this by utilizing OngoingTraining for Continuous Improvement in all areas -
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Pnp transistor smd ba rn smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE Q9001-1994 CMSH1-20ML CMSH2-20L CMSH3-20L CSHD5-25L CSHD10-45L
Abstract: to 5.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 3 mA to 10 mA Date: 5/29/96 Note: 1. This nonlinear , NPN SILICON HIGH FREQUENCY TRANSISTOR · LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz · HIGH , , IC = 5 mA MSG 20 3.0 MAG 10 Associated Gain, Maximum Stable Gain and Maximum , REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 8 V, IC = 20 mA , damage. 2. TJ for NE68135 and NE68100 is 200°C. 3. Maximum storage temperature for the NE68135 is -65 to California Eastern Laboratories
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NE68133-T1B-A transistor npn d 2078 common emitter bjt mje 3009 transistor bf 494 NE681 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68139-T1
Abstract: RANGE Frequency: 0.05 to 5.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 3 mA to 10 mA Date: 5/29/96 , SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · HIGH , use a single matching point to simultaneously achieve both low noise and high gain. MSG 20 , Gain and Maximum Available Gain, GA, MSG, MAG (dB) Minimum Noise Figure, NF min (dB) VCE = 3 V, IC = 5 mA 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE) NOISE FIGURE, GAIN MSG AND California Eastern Laboratories
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BJT characteristics NE68118-T1-A NE68119 NE68130 11481 NE68139
Abstract: Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.05 to 5.0 GHz Bias: VCE = 10 V , NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · , series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and , (SOT 343 STYLE) NE85600 NOISE FIGURE AND GAIN vs. FREQUENCY 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 5 California Eastern Laboratories
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transistor NEC D 882 p NE85630-T1-A Transistor BF 479 transistor c 1349
Abstract: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES , cal a Ple ils: a det 5635 N E 8 5 6 39 R NE8 · LOW COST NEC's NE856 series of NPN epitaxial , , high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 , ) NE85600 NOISE FIGURE AND GAIN vs. FREQUENCY 1.5 1.0 0.4 0.5 1.0 2 3 4 5 33 (SOT , NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 20 mA California Eastern Laboratories
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016p NE85633-T1B-A NEC 2501 LE 737 transistor NEC b 882 p NEC NE85635 mje 1303
Abstract: forward voltage of each diode and VCE is the collector-emitter voltage of the NPN transistor (recommended , Negative charge pump regulator drive signal (connects to base of external NPN transistor) FBP 37 I , external NPN transistor to regulate an external charge pump circuit. The controller is optimized for , 's output voltage and the voltage drop across the diodes and NPN transistor. For a typical application in , source driver supply voltage (VAVDD), positive and negative charge pump controllers to generate gate Texas Instruments
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TPS65155 SLVSB29 ISO/TS16949
Abstract: forward voltage of each diode and VCE is the collector-emitter voltage of the NPN transistor (recommended , drive signal (connects to base of external NPN transistor) FBP 37 I Positive charge pump , Negative Charge Pump Controller The negative charge pump controller uses an external NPN transistor to , 's output voltage and the voltage drop across the diodes and NPN transistor. For a typical application in , source driver supply voltage (VAVDD), positive and negative charge pump controllers to generate gate Texas Instruments
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Abstract: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES · HIGH GAIN BANDWIDTH PRODUCT , amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 , ) VCE = 3 V, IC = 5 mA 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE) NOISE FIGURE, GAIN , NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS fT Gain Bandwidth Product at VCE = 8 V, IC = 20 , 50 0.27 0.18 2000 1.82 VCE = 3 V, IC = 5 mA VCE = 8 V, IC = 7mA 500 1.00 19.00 California Eastern Laboratories
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1820 0944 ca 4558 BJT BF 167 2SC5012 2SC4227 NE68118 NE68139R-T1
Abstract: part numbers and sizes. 5. Conductive Foam (Velostat)' Conductive Bench Top Static-Free Bubble Pack , . ANY UNAUTHORIZED USE MAY CONSTITUTE A THEFT. PURPOSE AND USE This catalog is not intended to be a , NOTES We have Included pages throughout the catalog entitled UPDATES AND NOTES for your use. HOW TO , .) Paper and old catalogs - Send to 02-001. Chemicals with precious metals - 10-000. Precious metals , *000-5930-00) and send it to 70-697, Ext. 4166. - To order TEK 1NSTRUMFNT MANUALS: 1. 2. From the field - Use -
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transistor cross reference MPT3N40 Westinghouse SCR handbook sje389 LT 8224 ZENER DIODE N9602N
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