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ultra fast recovery diodes

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MUR6040PT, MUR6060PT Ultra Fast Recovery Diodes A C A Dimensions TO , , MUR6060PT Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max , at lower temperature or space saving by reduced cooling MUR6040PT, MUR6060PT Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt , package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching Sirectifier
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UR6060PT
Abstract: MUR3080, MUR30100 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C Millimeter , by reduced cooling . MUR3080, MUR30100 Ultra Fast Recovery Diodes Fig. 1 Forward current , torque o C 138 0.8.1.2 . Nm 6 Weight W g MUR3080, MUR30100 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ , passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft -
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MUR3080 ultra fast recovery diodes
Abstract: MUR3080PT, MUR30100PT Ultra Fast Recovery Diodes A C A Dimensions TO , Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit , at lower temperature or space saving by reduced cooling MUR3080PT, MUR30100PT Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt , package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching Sirectifier
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Abstract: MUR6080, MUR60100 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C Millimeter , temperature or space saving by reduced cooling MUR6080, MUR60100 Ultra Fast Recovery Diodes Fig. 1 , Mounting torque Weight o C 189 W 0.8.1.2 Nm 6 g MUR6080, MUR60100 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR , -247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values Sirectifier
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Abstract: MUR6030, MUR6040, MUR6060 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C 19.81 , MUR6030, MUR6040, MUR6060 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic , , MUR6040, MUR6060 Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 , * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high -
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SEMPO ELECTRONIC
Abstract: MUR3080PT, MUR30100PT Ultra Fast Recovery Diodes A C Dimensions TO-247AD A , , MUR30100PT Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max , at lower temperature or space saving by reduced cooling . MUR3080PT, MUR30100PT Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt , package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching -
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Abstract: MUR15100 Ultra Fast Recovery Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode , temperature or space saving by reduced cooling MUR15100 Ultra Fast Recovery Diodes Fig. 1 Forward , =25oC Md Mounting torque Weight o C 78 W 0.4.0.6 Nm 2 g MUR15100 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR , -220AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values Sirectifier
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Abstract: MUR6040PT, MUR6060PT Ultra Fast Recovery Diodes A C Dimensions TO-247AD A , , MUR6060PT Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max , at lower temperature or space saving by reduced cooling . MUR6040PT, MUR6060PT Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt , package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching -
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Abstract: MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes Dimensions TO-220AC A C A C C(TAB , 50 W 0.4.0.6 Nm 2 g MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes , , MUR860, MUR8100 Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic , * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour Sirectifier
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MUR860 Diode DATASHEET mur860 diode fast recovery diode 54
Abstract: MUR6030, MUR6040, MUR6060 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C C , 6 g MUR6030, MUR6040, MUR6060 Ultra Fast Recovery Diodes Symbol Test Conditions , , MUR6060 Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery , * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high Sirectifier
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Abstract: MUR6080PT, MUR60100PT Ultra Fast Recovery Diodes A C A Dimensions TO , , MUR60100PT Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max , at lower temperature or space saving by reduced cooling MUR6080PT, MUR60100PT Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt , package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching Sirectifier
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Ultrasonic cleaner ultra fast recovery time diode 0100PT
Abstract: MUR3020PT, MUR3030PT, MUR3040PT, MUR3060PT Ultra Fast Recovery Diodes A C Dimensions TO , Weight W g MUR3020PT, MUR3030PT, MUR3040PT, MUR3060PT Ultra Fast Recovery Diodes Symbol , cooling . MUR3020PT, MUR3030PT, MUR3040PT, MUR3060PT Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current , recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour -
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Abstract: MUR6080PT, MUR60100PT Ultra Fast Recovery Diodes A C Dimensions TO-247AD A , W g MUR6080PT, MUR60100PT Ultra Fast Recovery Diodes Symbol Test Conditions , , MUR60100PT Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery , standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Rectifiers in switch mode power supplies -
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Abstract: MUR3020PT, MUR3030PT, MUR3040PT, MUR3060PT Ultra Fast Recovery Diodes A C A Dimensions , 62 W 0.4.0.6 Nm 2 g MUR3020PT, MUR3030PT, MUR3040PT, MUR3060PT Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ , temperature or space saving by reduced cooling MUR3020PT, MUR3030PT, MUR3040PT, MUR3060PT Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt Sirectifier
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Abstract: MUR6080, MUR60100 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C Millimeter , MUR6080, MUR60100 Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 , torque o C 189 0.8.1.2 . Nm 6 Weight W g MUR6080, MUR60100 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ , * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour -
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Abstract: MUR8100 Ultra Fast Recovery Diodes C A Dimensions TO-220AC A C A B C D E F G H , temperature or space saving by reduced cooling . MUR8100 Ultra Fast Recovery Diodes Fig. 1 Forward , =25oC Md mounting torque o C 78 0.4.0.6 . Nm 2 Weight W g MUR8100 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR , -220AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values -
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Abstract: MUR6020PT, MUR6030PT Ultra Fast Recovery Diodes A C A Dimensions TO , , MUR6030PT Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max , temperature or space saving by reduced cooling MUR6020PT, MUR6030PT Ultra Fast Recovery Diodes 120 A , -247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Rectifiers in switch mode power supplies (SMPS) * Uninterruptible power Sirectifier
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Abstract: MUR2960S Ultra Fast Recovery Diodes Dimensions TO-263(D2PAK) MUR2960S Symbol VRSM V , by reduced cooling MUR2960S Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage , -40.+150 TVJ TVJM Tstg Ptot Weight TC=25oC o C 125 W 2 g MUR2960S Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR , passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft Sirectifier
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Abstract: MUR60120PT Ultra Fast Recovery Diodes A C A Dimensions TO-247AD Millimeter Min , temperature or space saving by reduced cooling MUR60120PT Ultra Fast Recovery Diodes 70 A 60 50 , torque Weight o C 125 W 0.8.1.2 Nm 6 g MUR60120PT Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ , passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft Sirectifier
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Abstract: MUR20100, MUR20120 Ultra Fast Recovery Diodes Dimensions TO-220AC A C A C C(TAB , 0.4.0.6 Nm 2 g MUR20100, MUR20120 Ultra Fast Recovery Diodes Symbol Test Conditions , , MUR20120 Ultra Fast Recovery Diodes 50 6 70 A 60 TVJ=100°C VR= 540V uC 5 TVJ= 25 , standard package * Glass passivated chips * Very short recovery time * Extremely low losses at high switching frequencies * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high Sirectifier
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