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PMP180 Texas Instruments Single Transistor Forward Reference Design visit Texas Instruments
CC1190EM915-RD Texas Instruments CC1190EM 915MHz Reference Design visit Texas Instruments
PMP7870 Texas Instruments Hot Swap Controller Design visit Texas Instruments
AUTO-ECALL-REF Texas Instruments Automotive eCall Reference Design visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil

uhf amplifier design Transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888A. AN11062 NXP Semiconductors Broadband DVB-T UHF power amplifier with the , AN11062 NXP Semiconductors Broadband DVB-T UHF power amplifier with the BLF888A The transistor , AN11062 Broadband DVB-T UHF power amplifier with the BLF888A Rev. 1 â'" 30 May 2011 , reserved. 2 of 20 AN11062 NXP Semiconductors Broadband DVB-T UHF power amplifier with the NXP Semiconductors
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UT-090C-25

Abstract: BLF888 This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888. AN10869 NXP Semiconductors Broadband DVB-T UHF power amplifier with the BLF888 , Semiconductors Broadband DVB-T UHF power amplifier with the BLF888 3. Design and Simulation 3.1 BLF888 , AN10869 Broadband DVB-T UHF power amplifier with the BLF888 Rev. 01 - 25 May 2010 Application , Broadband DVB-T UHF power amplifier with the BLF888 1. Introduction For the past few years, new product
NXP Semiconductors
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UT-090C-25 DVB-T Schematic dvb-t transmitters C4532X7R1E475MT020U DVB-T Terrestrial Schematic DVB-T transistor amplifier

222259016629

Abstract: bvc62 transistor 1 Application Note AN98013 ABSTRACT A broadband linear amplifier design is presented , R5 BLV859 UHF linear push-pull power transistor full pagewidth 1998 Mar 23 amplifier 1 , amplifier; d. Philips Semiconductors BLV859 UHF linear push-pull power transistor CH1 S11 log , APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION
Philips Semiconductors
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222259016629 bvc62 222259116641 BLV589 BD139 transistor circuit diagram smd transistor nc 61 SCA57

motorola rf Power Transistor

Abstract: transistor equivalent table chart equivalent circuit for the transistor. Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , transistor with the required performance capabilities, the next step in the design of a power amplifier is , SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF
Motorola
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AN282A motorola rf Power Transistor transistor equivalent table chart 2N6256 transistor equivalent table 2N5849 motorola AN282A/D
Abstract: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 AN9315.1 Introduction [ /Title (AN93 15.1) /Subject (RF Amplifier Design Using HFA30 46 , and a wideband amplifier using the Intersil UHF transistor arrays is summarized. A two-stage , capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor , feedback amplifier are described. The HFA3046, HFA3096, HFA3127, HFA3128 transistor arrays are fabricated Intersil
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HFA31 800MH 2500MH 600MH ISO9000

transistor equivalent table chart

Abstract: 2N6256 equivalent circuit for the transistor. Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , the products referenced may be discontinued. Systemizing RF Power Amplifier Design Prepared by , inadequacy of using small-signal characterization data for large-signal amplifier design. Resistances and
Motorola
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2N5941-2 LARGE SIGNAL IMPEDANCES transistor 2N5849 motorola application note an-548A 2N5941 MOTOROLA TRANSISTOR

Q545

Abstract: SOI series shunt RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note , PACKAGED TRANSISTOR ARRAYS Circuit Design High-Gain Low-Noise Amplifier The SOI process has the , designing a high-gain low-noise and a wideband amplifier using the Intersil UHF transistor arrays is , RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-gain low-noise amplifier and a
Intersil
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Q545 SOI series shunt rf transistors amplifier design and matching network AC 187 npn transistor TO 1 uhf amplifier design Transistor uhf transistor amplifier

900mhz-1800mhz rf frequency amplifier circuit

Abstract: uhf amplifier design Transistor RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM , SOIC PACKAGED TRANSISTOR ARRAYS Circuit Design High-Gain Low-Noise Amplifier One important design , low-noise and a wideband amplifier using the Intersil UHF transistor arrays is summarized. VCC A , on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-gain low-noise
Intersil
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900mhz-1800mhz rf frequency amplifier circuit PNP Transistor Arrays Intersil PNP transistor 263

900mhz-1800mhz rf frequency amplifier circuit

Abstract: PNP UHF transistor the Harris UHF transistor arrays is summarized. VCC A two-stage, high-gain, low-noise amplifier , Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using , transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to , OF HFA3046/3096/3127/3128 SOIC PACKAGED TRANSISTOR ARRAYS Circuit Design High-Gain Low-Noise , (800MHz to 2500MHz) high-gain amplifier design, while the HFA3096 is used for the 10MHz to 600MHz
Harris Semiconductor
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PNP UHF transistor complementary npn-pnp transistor amplifier 3 ghz NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor 900MH

rf transistors amplifier design and matching network

Abstract: silicon bipolar transistor low noise amplifier Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor , process of designing a high-gain low-noise and a wideband amplifier using the Intersil UHF transistor , capabilities of ISL73096RH/ISL73127RH/ ISL73128RH transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-gain low-noise amplifier and a 10MHz to 600MHz wideband feedback amplifier are described. The ISL73096RH, ISL73127RH and ISL73128RH transistor arrays
Intersil
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AN1503 silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 transistor amplifier wideband PNP monolithic Transistor Arrays

HFA3046

Abstract: transistor arrays 5v Sem iconductor RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays A , /3127/3128 SOIC PACKAGED TRANSISTOR ARRAYS High-Gain Low-Noise Amplifier One important design , exploiting the FIF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-galn low-noise amplifier , hardness. The HFA3127 is used for the two stage matched (800MHz to 2500MHz) high-gain amplifier design
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transistor arrays 5v 3000MH 300MH
Abstract: AMPLIFIER MODULE UHF broadband am plifier module designed fo r use in mobile com m unication equipment , . BGY46B _ J v _ _ U H F POWER AMPLIFIER MODULE UHF broadband am plifier , = 9.6 V; typical values. May 1991 51 BGY47A yv UHF POWER AMPLIFIER MODULE A , RF amplifier, using npn transistor chips w ith lumped-element matching components in a plastic , 138 May 1994 5 VHF Car mobile modules UHF Portable modules SHF Portable modules SHF Car -
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BLF642

Abstract: Doherty efficiency Optimized for Doherty power amplifier designs, this 650 W transistor achieves a , NXP LDMOS RF power transistors BLF88x, BLF879P & BLF642 RF power UHF/DVB-T broadcasting at its best Supporting all broadcast amplifier designs in the 470 to 860 MHz band, this complete family , operation #7; } Solutions available for all sub-bands across UHF band #7; } High-performance finals #7; - , matched line-ups #7; Applications } Communication transmitters in the UHF band #7; } Industrial
NXP Semiconductors
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BLF88 BLF881 BLF884P BLF888B

EIAJ-SC74

Abstract: ultra low noise NPN transistor exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high f j enables the design of UHF amplifiers which exhibit exceptional stability. Features · · · · NPN Transistor ( f j , Transistor pairs that are fabricated with Harris Semiconductor's complementary bipolar UHF-1X process. The
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HFA3135 EIAJ-SC74 ultra low noise NPN transistor sot23 Bipolar NPN Transistor NPN pnp MATCHED PAIRS Matched pair transistors HFA3134 HFA3134IH96 HFA3135IH96 1-800-4-HARRIS
Abstract: Operating between 470 and 860 MHz, the BLF881 (driver) and BLF888A (final) LDMOS transistor line-ups , `` Best broadband performance `` Excellent manufacturing consistency `` Best-in-class design , Key applications `` Digital (DVB-T) broadcast transmitters in the UHF band `` Industrial applications in the UHF band NXPâ'™s BLF88x family comprises the BLF881 and BLF888A, ` 50 V LDMOS transistors for the HF, VHF and UHF bands and supports digital broadcast transmitters with one-octave NXP Semiconductors
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UHF amplifier schematic diagram

Abstract: homelink Amplifier with the ESD- 1 Low Cost, Low Current Broadband UHF Low Noise Amplifier with the , Application Note No. 142 Low Cost, Low Current Broadband UHF Low Noise Amplifier with the ESDPCB Cross , Application Note No. 142 Low Cost, Low Current Broadband UHF Low Noise Amplifier with the ESDNoise Figure , UHF Low Noise Amplifier with the ESDNoise Figure, Tabular Data From Rohde & Schwarz FSEM30 + FSEK3 , Cost, Low Current Broadband UHF Low Noise Amplifier with the ESDScanned Image of PC Board Figure 4
Infineon Technologies
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UHF amplifier schematic diagram homelink BFP540ESD Garage Door Opener UHF SCHEMATIC garage opener schematic

Philips Application Note ECO6907

Abstract: AN98032 Semiconductors RF transmitting transistor and power amplifier fundamentals Power amplifier design 0 dB , RF transmitting transistor and power amplifier fundamentals 3.1.1.2 Power amplifier design , transmitting transistor and power amplifier fundamentals Power amplifier design g0 = g 4 = R where , Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing
Philips Semiconductors
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Philips Application Note ECO6907 AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 MGM242
Abstract: NXP UHF/DVB-T power LDMOS transistor BLF888A(S) The most powerful LDMOS broadcast transistor delivering 125 W output power Designed for broadband operation (470 and 860 MHz), this LDMOS transistor , transmitter applications in the UHF band `` Industrial applications in the UHF band The BLF888A is a 600 W LDMOS RF power transistor for broadcast transmitter and industrial applications. It is built in NXPâ , design flexibility. Due to the high power levels handled by the devices, the thermal resistance of the NXP Semiconductors
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2002/95/EC

TP3024A

Abstract: transistor 355 TECHNICAL DATA Advance Information The RF Line UHF Linear Power Transistor The TP3024A is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a Class AB push-pull, high gain, broadband amplifier having a high degree of linearity without the need , â'¢ Push-Pull Configuration MAXIMUM RATINGS 35.5 W â'" 960 MHz UHF LINEAR POWER TRANSISTOR NPN , measured separately 2 Both transistor chips operating m push-pull amplifier This document contains
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transistor 355 35 W 960 MHz RF POWER TRANSISTOR NPN Gan transistor Gan on silicon transistor MOTOROLA POWER TRANSISTOR for power amplifier F33-11

am79rf440

Abstract: 8 PIN PACKAGE UHF PLL TRANSMITTER 3 PA_EMIT O Ground pin for the final transistor amplifier stage (common emitter). 4 , UHF VCO. This voltage is typically a regulated voltage supplied by an external PNP pass transistor , transistor used as a voltage regulator for the UHF VCO. 45 REF_VCC I VCC supply pin (+3.0 VDC , MHz is provided on-chip. The UHF VCO is of a design that uses a differential resonant tank, and , PNP pass transistor. The UHF VCO is active during TX, RX, or TUNE modes, and is powered down during
Advanced Micro Devices
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am79rf440 8 PIN PACKAGE UHF PLL TRANSMITTER ir active bandpass filter circuit diagram pll FM MODULATOR amplifier mixer circuit diagram band pass active filters 79RF440 US900
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