500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TMS417809A-50DZ Texas Instruments 2MX8 EDO DRAM, 50ns, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 visit Texas Instruments
TMS417809-70DZ Texas Instruments 2MX8 EDO DRAM, 70ns, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 visit Texas Instruments
TMS417809-80DZ Texas Instruments 2MX8 EDO DRAM, 80ns, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 visit Texas Instruments
ADS7809UB Texas Instruments 16-Bit 10us Serial CMOS Sampling Analog-to-Digital Converter 20-SOIC -40 to 85 visit Texas Instruments
TMS427809A-60DGCR Texas Instruments IC,DRAM,EDO,2MX8,CMOS,TSOP,28PIN,PLASTIC visit Texas Instruments
TMS417809A-70DZ Texas Instruments 2MX8 EDO DRAM, 70ns, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 visit Texas Instruments

ua 7809

Catalog Datasheet MFG & Type PDF Document Tags

ic 7804

Abstract: LA 7809 .analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998 AD 7804/A D 7805/A D 7808/A D 7809 AD7804 , 7804/A D 7805/A D 7808/A D 7809 AD7808/AD7809â'" SPECIFICATIONS (AVdd and DV dd = 3.3 V ± 1 0 % , /A D 7808/A D 7809 AD7804/AD7808 TIMING CHARACTERISTICS1 DD= (V In te rn a l R e fe re n c e . All , /A D 7809 AD7805/AD7809 TIM IN G C H A R A C T E R IST IC S1 (V D = 3 .3 V ± D = In te rn a l , FOR ASYNCHRONOUS LDAC UPDATE. F ig u re 2. T im in g D ia g ra m fo r A D 7805/A D 7809 P a ra lle
-
OCR Scan
ic 7804 LA 7809 ua 7809 function ic 7809 K/7809 A Specifications IC 7809 AD7804/AD7805/AD7808/AD7809 AD7805 AD7808 AD7809 RS-28 ST-44B

ua 7809

Abstract: 7809 = VGS, ID = 250 µA 2.8 ID(on) VDS = 5 V, VGS = 10 V 943 VGS = 10 V, ID = 30 A , Measured Data 0.0099 IF = 60 A, VGS = 0 V 0.91 1 7809 7900 Unit Static Gate
Vishay Siliconix
Original
SUP90N08-06 7809 transistor 7809 VOLTAGE sd 7809 S-71518R

SOT-89-3, 7805

Abstract: 7805 to 92 (Max)(µA) Quiescent Current (Max) (mA) 8.0500 (7809) VDROP (Typ) (V) Detect Voltage (Typ) VIN , -252-2 -40 to 125oC AZ7808DTR-E1 Lead Free Green Supply Current (Max)(µA) AZ7805T-E1 AZ7806T-G1
BCD Semiconductor
Original
SOT-89-3, 7805 7805 to 92 7805 voltage regulator 3v 7809 TO-92 PACKAGE 7805 internal circuit 7805 sot-89 AZ78XX AZ70XX AZ7023/25/27/29/ AZ7806D-E1 AZ7806D-G1 AZ7808D-E1

1N 7812

Abstract: 7812 5A 17.3 19 19 19 19 19 19 19 19 18 2 18 2 ID Toi. , 11033 11036 4459 4460 7806 7807 8621 9563 9564 11034 11035 22803 22804 4462 4465 7809 7812 9566 9569
-
OCR Scan
1N 7812 7812 5A 7808 or 7809 U 7812 JAN1N6108 JAN1N6108US DO-41 DO-213AB DO-214AC O-213AB SA33A

ua 7809

Abstract: transistor 7809 VOLTAGE = VGS, ID = 250 µA 2.8 ID(on) VDS = 5 V, VGS = 10 V 943 VGS = 10 V, ID = 30 A , Measured Data 0.0099 IF = 60 A, VGS = 0 V 0.91 1 7809 7900 Unit Static Gate
Vishay Siliconix
Original
use of 7809 Diode 7809 V943

20-PIN

Abstract: ADS7809 ADS7809 ADS 7809 7809 ADS SBAS017A ­ NOVEMBER 1996 ­ REVISED MAY 2002 16-Bit 10µs Serial CMOS Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION q 100kHz SAMPLING RATE q , 2.5 1 2.52 V µA 2.3 No Load 2.5 2.7 V µA V V µA µA Ext. 2.5000V Ref 100 ­0.3 +2.0 VIL = 0V VIH = 5V ADS7809 SBAS017A , CONDITIONS 10 MIN TYP MAX UNITS MHz MHz +0.4 ±5 V V µA 15
Texas Instruments
Original
ADS7808 20-PIN 7809 MARKING ADS7809P ADS7809PB ADS7809U 12-BIT

super cap 5.5v

Abstract: ds1302 will be discharged. Using the data sheet spec of ICC1T max of 0.3 µA at 2.5 VCC1 gives a value for RL , diodes 698.3 476.8 832.8 639.5 952.5 780.9 1.5F 1 diode 2228.7 2657.9 3039.8 2 diodes 1521.7 2040.9
Dallas Semiconductor
Original
super cap 5.5v ds1302 ds1302 circuit real time clock super cap DS1302 DS1202

super cap 5.5v

Abstract: ds1302 circuit real time clock discharged. Using the data sheet spec of ICC1T max of 0.3 µA at 2.5 VCC1 gives a value for RL of 8.3M . Then , 832.8 639.5 952.5 780.9 5 of 7 1.5F 1 diode 2228.7 2657.9 3039.8 2 diodes 1521.7
Dallas Semiconductor
Original
ds1302 circuit BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT trickle battery charger circuit

ua 7809

Abstract: Pin Diagram of ic 7806 l)L2 l|H3 l|L3 Frif = 42 MHz OSCi, = 11 MHz OSCins V dd Vm 5 uA uA uA uA uA uA OSCin = , 0.01 Ö I < o o 1.0 1.0 V uA V PDT, PDR; Vo = VD D /Vss LDT; l0 = 1mA LDT; Vo VoH2 Voo (LKG) 2 VoH3 Voi3 = V ss Vdd-1.0 5.0 uA V F Ì; l0 = 0.5mA P i; l0 = 0.5mA FT;Vo = Vdd Vdd = , 5.5V (Note 1) 1.0 5.0 3.0 5.0 10 4.0 7.0 13 V uA mA mA mA mA mA mA Output OFF Leakage Current , 39.075 39.180 39.135 39.195 39.235 39.295 39.275 39.275 N 7800 7803 7806 7809 7812 7795 7830 7833 7815
-
OCR Scan
Pin Diagram of ic 7806 ic 7815 pin out diagram ua 7812 PIN DIAGRAM 7812 samsung ic 9945 a 8 pin st 9318 KS8802 46/49MH KS8802N KS8802D

st 9318

Abstract: CI 7809 = 0.4V VIH *2 VIL *2 MHz MHz VDD-0.5 *1 60 300 VP-P µA mA 0.4 , 7809 0 1 0 1 5 46590 9318 49755 39060 7812 0 1 1 0 6
Nippon Precision Circuits
Original
M5132 SM5132 SM5132CP SM5132DS SM5132DP SM5132CS CI 7809 ST 9322 9374 ci 7815 7855 SM5132NPC 4649MH 16DIP

DA1 7809

Abstract: 7809 MARKING Input Current VIN =0 µA IIH VIN =VD D - 0.5 Standby Current Operating Current Input , 1 Transmit N* 7795 7830 7833 7815 7836 7827 7839 7847 7859 7855 7800 7803 7806 7809 7812 DA2
AUK
Original
DA1 7809 pin out of 7812 DA312 N9934 marking sbn L5601 SL5601/P SL5601 SL5601P DIP16 KSI-W008-000 610MH

A928

Abstract: transistor a928 20 30 lBACKUP VDD = 4V, s/w1 = b - - 10 µA Input High Voltage Input Low , 1.0 2.5 4.0 Vrms DCO Output current IO(DCO) 1 step 70 100 140 µA ATT , . The current of each step is increased or decreased approximately 100/uA. STEP DCO ATTENUATION 0 0 - 64dB - - 1 I = 100 uA + 30 uA - 60dB - - 62dB 2 2*1 - 54dB - - 58dB , C945 C229 R243 4.7k R241 3.9k 2 3 IC203 4 C236 1µF/50V Q205 A928 7809
Samsung Electronics
Original
R1009 A928 transistor a928 ic ka4558 pin diagram 4.7K variable resistor IC 7809 pin diagram transistor r1009 S5A2250A01 16-DIP-300A S5A2250A01-D0B0 P-300A 1N4001 S1A0065A

st 9318

Abstract: ic 7815 pin out diagram . 5.5 V dd 0.3V dd V dd 0.1 V dd 27 42 Unit V v V V V MHz MHz MHz Vrm s Vrm s Vrm s uA uA uA uA uA uA D 0 - D 3 , SB D 0 - D 3 , SB Mode Mode VTif = 0.15Vrm s V rif = 0.15V,m s O S C ir = 0.3Vrm s , -1.0 0.4 0.01 Vdd-1.0 5.0 0.4 5.0 3.0 5.0 10 5.0/4.0 10.0/7.0 15.0/13.0 1.0 Typ. Max. Unit V V uA V uA V uA , 7803 7806 7809 7812 7795 7830 7833 7815 7836 7827 7839 7847 7859 7855 7855 FTx (MHz) 46.510 46.530
-
OCR Scan
ic 7815 pin diagram 50/KS8800/KS8801 pin diagram of ic 7815 IC 7815 15V supply 8801 st ic 7815 KS8800/8801 15CH/10CH KS8800/KS8801 KS8800 KS8801 KS8800N

NJM7805A

Abstract: NJM7812A 7805 â'" 7809 7812-7815 7818-7824 35 35 40 V Storge Temperature Range Tstg -40 - +150 X, Operating , tSinl ¿¡8 = /W &HS =20"C ut He
-
OCR Scan
NJM7805 NJM7805A NJM7812A jrc 7805 NJM7809A 7805 jrc NJM7800 NIM78MFA NJM7B000LA NJM7805/15/24 NJM7812

kkz 12

Abstract: 1J23 [C5DéQêë5ºlö÷øZ"éQêëòKWX cùà a .úZf5Z , ,45dyz 012%5 6 - 4 .// 4 .// 03% .- 012%5 6 780&9&:; {7ý9J/¶c|}f
-
Original
kkz 12 1J23 1C45 5789 FGH125

DS1302

Abstract: ds1302 circuit will be discharged. Using the data sheet spec of ICC1T max of 0.3 µA at 2.5 VCC1 gives a value for RL , 78.1 952.5 780.9 3039.8 2492.5 hours 090794 4/6 APPLICATION NOTE 82 SUPER CAP
Dallas Semiconductor
Original
Diode RL 4B ds1202 dallas

ic 7815 pin out diagram

Abstract: ua 7809 0.3 0.3 Vdd vrms Input Current Iih1 OSCin = VDD 20 uA I,l1 OSCiâ'ž = Vss 20 uA I,h2 TIF, RIF: Vod 40 uA Iil2 TIF, RIF: Vss 40 uA Iih3 SB, Mode, D0-D3: VDD 10 uA I,l3 SB, Mode, D0-D3: Vss 10 uA :g SAMSUNG Electronics This Material Copyrighted By Its Respective Manufacturer 191 , , PDR; lo = 0.5mA 0.4 V Output OFF Leakage Current Ilkg1 PDT, PDR; Vo = VDD/Vss 0.01 1.0 uA Output Voltage Voh2 LDT; lo= 1mA Vdd-1.0 V Output OFF Leakage Current Ii_kg2 LDT; Vo = Vss 5.0 uA Output
-
OCR Scan
IC 7830 CHARACTERISTICS OF IC 7812 IC 7812 pin configuration ua 7803 name of ic 7809 7812 c KS8801N KS8800D KS8801D

ic 7809

Abstract: OF IC 7809 , IE = 0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE , 7 TYP µA MAX 0.1 0.1 70 140 11 fT Gain Bandwidth at VCE = 1 V, IC = 10 mA, f , CURRENT GAIN vs. COLLECTOR CURRENT 500 20 200 µA 180 µA 160 µA 15 140 µA 120 µA 10 100 µA 80 µA 60 µA 5 40 µA DC Current Gain,hFE Collector Current, lc (mA) 25 200 VCE = 2 V 100 VCE = 1 V 50 20 lB = 20 µA 10 0 1.0 2.0 3.0 Collector to
NEC
Original
UPA828TF NE687 UPA828TF-T1 ic 7809 OF IC 7809 electrical characteristics IC 7809 3699 npn

KS8803

Abstract: IC 7812 pin configuration 0.3VDD Vrms IIH VIN = VDD - - 40 µA IIL VIN = VSS - - 40 µA , 1.0 V Output OFF Leakage ILKG1 PDT, PDR : VO = VDD/VSS - 0.01 1.0 µA Current ILKG2 LDT : VO = VSS - - 5.0 µA ISB1 VDD = 3V (Note 2) - 1.0 2.0 , 49.740 39.045 7809 46.570 46.570 9314 1 0 1 0 5 49.755 39.060 7812
Samsung Electronics
Original
KS8803B 16-SOP-225 KS8804B KS8803BD KS8803 datasheet ic 7809 KS8803B/4B 695MH

OF IC 7809

Abstract: ic 7809 =5mA, f=2GHz µA 6.5 VCE=3V, IC=30mA µA 10 VCB=5V, IE=0 VEB=1V, IC=0 2 S21e 1 2 , 83.97 0.110 63.56 0.200 -98.49 1000 0.375 -166.62 4.943 78.09 0.134
SANYO Electric
Original
2SC5665 C 5763 transistor TA 7176 IC TRANSISTOR 9642 ic 17358 dc 8069 ENN7351
Showing first 20 results.