500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
SN74LS136NSR Texas Instruments Quad 2-Input Exclusive-OR Gates with Open-Collector Outputs 14-SO 0 to 70 visit Texas Instruments Buy
SN74LS136NSRG4 Texas Instruments Quad 2-Input Exclusive-OR Gates with Open-Collector Outputs 14-SO 0 to 70 visit Texas Instruments
SN74LS136NSRE4 Texas Instruments LS SERIES, QUAD 2-INPUT XOR GATE, PDSO14, GREEN, PLASTIC, SOP-14 visit Texas Instruments
RC4136NS Texas Instruments QUAD OP-AMP, 7500uV OFFSET-MAX, 3MHz BAND WIDTH, PDSO14 visit Texas Instruments

tras 36ns

Catalog Datasheet MFG & Type PDF Document Tags

tras 36ns

Abstract: Graphic RAM Latency relationship to frequency (Unit: clock cycles) tRRD 12ns 1 1 1 2 2 tRAS 36ns , 21 22 23 24 25 26 27 28 29 30 Key Specifications VG468321C tCK tRAS tAC tRC Clock Cycle time(min , asserted anytime after tRAS(min.) is satisfied from the BankActivate command in the desired bank. The maximum time any bank can be active is specified by tRAS(max.). Therefore, the precharge function must be performed in any active bank within tRAS(max.). At the end of precharge, the precharged bank is still the
Vanguard International Semiconductor
Original
tras 36ns 072X32X2 VG468321CQ 125MH 143MH 166MH 1G5-0182

TC59S1616AFT

Abstract: TC59S1616AFT-10 2 -12 Version (calculation with tCK = 12ns ~ 36ns) CLK period (tPRD) tRC tRAS tRF tCAC tRCD (R) tRCD (W) tRSC tRRD 120ns 72ns 36ns 32ns 36ns 24ns 24ns , -12 Clock Cycle Time (Min.) 10ns 12ns tRAS Active to Precharge Command Period (Min , ) Symbol -10 Parameter Min. tRC Ref/Active to Ref/Active Command Period 100 tRAS , cycles) -10 Version (calculation with tCK = 10ns ~ 30ns) CLK period (tPRD) tRC tRAS tRF
Toshiba
Original
TC59S1616AFT-10 TC59S1608AFT-10 TC59S1616AFT TC59S1604AFT TC59S1616 TC59S1608 tc59s1608aft TC59S1604AFT-10 TC59S1608AFT TC59S1604FT

K4D261638F-TC40

Abstract: K4D261638F 15tCK to 16tCK · Changed tRAS of K4D261638F-TC25 from 12tCK to 13tCK. · Changed tRAS of , read command tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD 18 19 13 6 4 5 4 100K - 16 , ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 3 200MHz ( 5.0ns ) 3 tRC 18 16 16 16 13 12 tRFC 19 17 17 17 15 14 tRAS 13 11 11 11 9 8 tRCDRD tRCDWR 6 4 , 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 3 200MHz ( 5.0ns ) 3 tRC 16 16 16 13 12 tRFC 17 17
Samsung Electronics
Original
K4D261638F K4D261638F-TC40 K4D261638F-TC2A K4D261638F-TC33 K4D261638F-TC36 K4D261638F-TC50 K4D261638F-TC25/2A/33/36 K4D261638F-TC2A/33/36 200MH 65TYP 20MAX

tc59s1608

Abstract: tCAC CAS Access Time (Max.) 30ns 36ns tCKA CLK Access Time (Max.) 10ns with CL = 3 12ns , Power Down Mode Entry Time 0 15 0 18 tRAS RAS to Precharge Command Delay Time 60 , tRRD tCAC tRAS tRAC tRSC tRST 100ns 40ns 20ns 30ns 60ns 60ns 40ns , -12 (Calculation with tPRD = 12ns~30ns) clock period (tPRD) tRC tRP tRRD tCAC tRAS tRAC tRSC tRST 120ns 48ns 24ns 36ns 72ns 72ns 48ns 24ns 24ns 5 2 1
Toshiba
Original
TC59S1608FT-10/12 TC59S1604FT-10/12 TC59S1608FT 100MH TSOP44-P-400 TC59S1608/1608/1604FT

GDDR

Abstract: LP SDRAM 350MHz ( 2.86ns ) 5 300MHz ( 3.3ns ) 5 275MHz ( 3.6ns ) 5 tRC 20 17 15 13 13 tRFC 22 19 17 15 15 tRAS 14 , ( 3.6ns ) 5 tRC 13 13 tRFC 15 15 tRAS 9 9 tRCDRD tRCDWR 5 2 5 2 tRP 4 4 tRRD 3 3 tDAL , command Power down exit time Refresh interval time Symbol tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD tWR tWR_A , ( 2.5ns ) 6 350MHz ( 2.86ns ) 5 300MHz ( 3.3ns ) 5 275MHz ( 3.6ns ) 5 tRC 17 15 13 13 tRFC 19 17 15 15 tRAS 12 10 9 9 tRCDRD tRCDWR 6 4 5 3 5 2 5 2 tRP 5 5 4 4 tRRD 4 4 3 3 tDAL 10 10 9
Samsung Electronics
Original
K4D55323QF-GC K4D55323QF-GC2A GDDR LP SDRAM 144-B 350MH

HYM7V64801TFG1

Abstract: ) 30ns (B) 36ns (C) 45ns tRRD BYTE28 (A) 30ns (B) 24ns (C) 30ns tRCD BYTE29 (A) 30ns (B) 36ns (C) 45ns tRAS BYTE30 BYTE31 BYTE32-61 BYTE62 BYTE63 (A) 50ns (B) 48ns (C) 45ns 64MB - , (C) 24ns tRP BYTE27 (A) 30ns (B) 36ns (C) 45ns tRRD BYTE28 (A) 30ns (B) 24ns (C) 30ns tRCD BYTE29 (A) 30ns (B) 36ns (C) 45ns tRAS BYTE30 Module Bank Density Superset , bank active tRAS>tRAS(min), tR P>tRP(m in), Parameter Operating current Precharge Standby Current
-
OCR Scan
HYM7V64801TFG1 8MX64 HYM7V64800/ HYM7V64801/ HYM7V64830/ HYM7V64831 168-P
Abstract: ( 3.6ns ) 5 tRC 17 15 13 13 tRFC 19 17 15 15 tRAS 12 10 9 9 tRCDRD tRCDWR 6 4 , ( 3.6ns ) 5 tRC 15 13 13 tRFC 17 15 15 tRAS 10 9 9 tRCDRD tRCDWR 5 3 5 2 5 2 , 300MHz ( 3.3ns ) 5 275MHz ( 3.6ns ) 5 tRC 13 13 tRFC 15 15 tRAS 9 9 tRCDRD tRCDWR 5 , read command tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD -22 -25 Min Max 17 19 12 100K 6 , 400MHz ( 2.5ns ) 6 350MHz ( 2.86ns ) 5 300MHz ( 3.3ns ) 5 275MHz ( 3.6ns ) 5 tRC 20 17 15 Samsung Electronics
Original
K4D55323QF-GC33 5323QF-GC 300MH 275MH

K4D551638D

Abstract: K4D551638D-TC Exit self refresh to read command Symbol tRC tRFC tRAS tRCDRD tRCDW -2A Min 15 17 10 5 , exit time Refresh interval time tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD tXSR tPDEX tREF , Frequency Cas Latency 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 , 17 17 17 15 14 14 12 tRAS 10 10 10 9 8 8 7 tRCDRD tRCDWR 5 3 5 3 5 3 4 2 , 6 Unit K4D551638D-TC33 Frequency Cas Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4
Samsung Electronics
Original
K4D551638D-TC K4D551638D-TC45 K4D551638D-TC2A K4D551638D-TC60 K4D551638D-TC50 K4D551638D-TC40 K4D551638D K4D551638D-TC30 K4D551638D-TC33/36
Abstract: tRC tRFC tRAS tRCDRD tRCDW tRP tRRD tWR tWR_A tCDLR tCCD tMRD tDAL tXSR tPDEX tREF -2A Min 15 17 10 5 , time Symbol tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD tWR tWR_A tCDLR tCCD tMRD tDAL tXSR tPDEX tREF -50 Min , 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 4 200MHz ( 5.0ns ) 3 166MHz ( 6.0ns ) 3 K4D551638D-TC33 Frequency Cas Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 , 17 17 17 15 14 14 12 tRAS 10 10 10 9 8 8 7 tRCDRD tRCDWR 5 3 5 3 5 3 4 2 4 2 4 2 3 2 256M GDDR Samsung Electronics
Original
K4D551638D-TC50/60 8K/64 A10/AP 25TYP

K4D261638E-TC36

Abstract: K4D261638E-TC50 15tCK to 17tCK · Changed tRAS of K4D261638E-TC33/36 from 9tCK to 10tCK · Changed tRP of , Min Max Min Max tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD 15 17 10 4 2 5 3 , 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 3 200MHz ( 5.0ns ) 3 tRC 15 15 15 13 12 tRFC 17 17 17 15 14 tRAS 10 10 10 9 8 tRCDRD tRCDWR 4 2 4 2 4 2 4 2 4 2 tRP 5 5 5 , Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 3 200MHz ( 5.0ns ) 3 tRC 15 15
Samsung Electronics
Original
K4D261638E K4D261638E-TC2A K4D261638E-TC33 K4D261638E-TC36 K4D261638E-TC40 K4D261638E-TC50
Abstract: tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD Last data in to Row precharge @NortWR mal Precharge Last data , 17 tRFC 19 tRAS 12 tRCDRD tRCDWR 6 4 tRP 5 tRRD 4 tDAL 8 Unit tCK K4D263238E-GC2A Frequency Cas Latency 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 tRC 15 13 13 13 12 tRFC 17 15 15 15 14 tRAS 10 9 9 9 8 tRCDRD tRCDWR 5 3 4 2 4 2 4 , K4D263238E-GC33 Frequency Cas Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 Samsung Electronics
Original
K4D263238E-GC K4D263238E-GL36 K4D263238E-GC25 250MH

Ras 1210

Abstract: K4D263238E-GC36 Row precharge time Row active to Row active Symbol tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD , CHARACTERISTICS (II) K4D263238E-GC25 Frequency Cas Latency 400MHz ( 2.5ns ) 5 tRC 17 tRFC 19 tRAS , Latency 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 tRC 15 13 13 13 12 tRFC 17 15 15 15 14 tRAS 10 9 9 9 8 tRCDRD , Unit K4D263238E-GC33 Frequency Cas Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz
Samsung Electronics
Original
Ras 1210 K4D263238E-GC36 samsung ddr sdram 128Mbit 144-BALL K4D263238E-GC2A/33/36 K4D263238E-GC40 222MH K4D263238E-GC45

KHX5300

Abstract: KHX5300S2LLK2 (tCK) CL=4 Row Cycle Time (tRC) Refresh to Active/Refresh Command Time (tRFC) Row Active Time (tRAS , .) 60ns (min.) 105ns 36ns (min.) / 70,000ns (max.) +1.8V (+/- .1V) 1.800 W (operating per module) 94 V - 0
Kingston Technology
Original
KHX5300 KHX5300S2LLK2 2g 667mhz ddr2 sodimm KHX5300S2LLK2/2G PC2-5300 200-P 1024MB DDR2-667 2048MB
Abstract: tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD Last data in to Row precharge @NortWR mal Precharge Last data , 17 tRFC 19 tRAS 12 tRCDRD tRCDWR 6 4 tRP 5 tRRD 4 tDAL 8 Unit tCK K4D263238E-GC2A Frequency Cas Latency 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 tRC 15 13 13 13 12 tRFC 17 15 15 15 14 tRAS 10 9 9 9 8 tRCDRD tRCDWR 5 3 4 2 4 2 4 , K4D263238E-GC33 Frequency Cas Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 Samsung Electronics
Original

K4D263238E-GC25

Abstract: K4D263238E-GC2A Row precharge time Row active to Row active Symbol tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD , CHARACTERISTICS (II) K4D263238E-GC25 Frequency Cas Latency 400MHz ( 2.5ns ) 5 tRC 17 tRFC 19 tRAS , Latency 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 tRC 15 13 13 13 12 tRFC 17 15 15 15 14 tRAS 10 9 9 9 8 tRCDRD , Unit K4D263238E-GC33 Frequency Cas Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz
Samsung Electronics
Original
JEDEC 144ball FBGA
Abstract: tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD Last data in to Row precharge @NortWR mal Precharge Last data , 17 tRFC 19 tRAS 12 tRCDRD tRCDWR 6 4 tRP 5 tRRD 4 tDAL 8 Unit tCK K4D263238E-GC2A Frequency Cas Latency 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 tRC 15 13 13 13 12 tRFC 17 15 15 15 14 tRAS 10 9 9 9 8 tRCDRD tRCDWR 5 3 4 2 4 2 4 , K4D263238E-GC33 Frequency Cas Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 Samsung Electronics
Original

K4D553238F-JC40

Abstract: GDDR Min Max Min Max tRC tRFC tRAS tRCDRD tRCDW 16 - 16 - 16 - 13 - , Cas Latency 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 3 200MHz ( 5.0ns ) 3 tRC 16 16 16 13 12 tRFC 17 17 17 15 14 tRAS 11 11 11 9 8 , 7 7 Unit K4D553238F-JC33 Frequency Cas Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 3 200MHz ( 5.0ns ) 3 tRC 16 16 13 12 tRFC 17 17 15 14 tRAS 11 11
Samsung Electronics
Original
K4D553238F-JC K4D553238F-JC40 K4D553238F-JC50 K4D553238F-JC36 K4D553238F-JC2A K4D553238F
Abstract: CHARACTERISTICS (II) K4D263238E-GC25 Frequency Cas Latency 400MHz ( 2.5ns ) 5 tRC 17 tRFC 19 tRAS 12 , 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 tRC 15 13 13 13 12 tRFC 17 15 15 15 14 tRAS 10 9 9 9 8 tRCDRD tRCDWR 5 3 4 2 4 2 4 2 4 2 tRP 5 4 , Frequency Cas Latency 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 250MHz ( 4.0ns ) 4 222MHz ( 4.5ns ) 3 tRC 13 13 13 12 tRFC 15 15 15 14 tRAS 9 9 9 8 tRCDRD tRCDWR 4 2 4 2 4 2 4 2 tRP 4 4 4 4 tRRD Samsung Electronics
Original

K4D26323RA-GC33

Abstract: GC33 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 tRC 15 13 16 tRFC 17 15 18 tRAS 10 9 11 , K4D26323RA-GC36 Frequency Cas Latency 275MHz ( 3.6ns ) 4 tRC 16 tRFC 18 tRAS 11 tRCDRD tRCDWR , tRFC of K4D26323RA-GC2A from 22tCK to 17tCK · Changed tRAS of K4D26323RA-GC2A from 14tCK to 10tCK · , 19tCK to 15tCK · Changed tRAS of K4D26323RA-GC33 from 12tCK to 9tCK · Changed tRCDRD of , 1tCK+tIS 7.8 - 1tCK+tIS 7.8 - ns us tRC tRFC tRAS tRCDRD tRCDWR tRP tRRD
Samsung Electronics
Original
K4D26323RA-GC GC33 K4D26323AA-GL
Abstract: K4D26323RA-GC2A from 22tCK to 17tCK · Changed tRAS of K4D26323RA-GC2A from 14tCK to 10tCK · Changed tRCDRD of , K4D26323RA-GC33 from 17tCK to 13tCK · Changed tRFC of K4D26323RA-GC33 from 19tCK to 15tCK · Changed tRAS of , 200 1tCK+tIS 7.8 -33 Max 100K Min 16 18 11 5 3 5 3 3 3 2 1 2 8 200 1tCK+tIS 7.8 tRC tR F C tRAS , CHARACTERISTICS (II) K4D26323RA-GC2A Frequency Cas Latency 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4 tRC 15 13 16 tRFC 17 15 18 tRAS 10 9 11 tRCDRD 5 4 5 tRCDWR 3 2 3 tRP 5 4 5 tRRD 4 3 3 tDAL 8 7 8 Samsung Electronics
Original
K4D26323RA-GC33/36
Showing first 20 results.