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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistors crossreference

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR REPLACEMENT GUIDE

Abstract: ULN2083 array Temperature Number Package Description Range ULS-2045H 14-P n Hermetic DIP - H 3 Isolated Transistors & 1 Differential Amp. â'"55°Cto+125°C ULN-2046A 14-P n Plastic DIP-A 3 Isolated Transistors & 1 Differential Amp , Plastic DIP-A 7 Transistors with Common Emitters â'"40°C to +85°C ULN-2082A 16-P n Plastic DIP-A 7 Transistors with Common Collectors â'"40°C to +85°C ULN-2083A 16-P n Hermetic DIP - H 5 Transistor Array 0 , Plastic DIP-A 3 Isolated Transistors & 1 Differential Amp. 0°C to +85°C TYPE ULS-2045H, ULN-2046A, and
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SN76116N ULN2218 SFC2741 TRANSISTOR REPLACEMENT GUIDE ULN2083 array MC1310P sfc*2741 TBA221 All in one TRANSISTOR REPLACEMENT GUIDE ULN-2047A ULN-2054A ULN-2081A ULS-2083H ULN-2086A SN75462P

motorola transistor 7439

Abstract: 741TC Temperature Number Package Description Range ULS-2045H 14-P n Hermetic DIP - H 3 Isolated Transistors & 1 Differential Amp. â'"55°Cto+125°C ULN-2046A 14-P n Plastic DIP-A 3 Isolated Transistors & 1 Differential Amp , Plastic DIP-A 7 Transistors with Common Emitters â'"40°C to +85°C ULN-2082A 16-P n Plastic DIP-A 7 Transistors with Common Collectors â'"40°C to +85°C ULN-2083A 16-P n Hermetic DIP - H 5 Transistor Array 0 , Plastic DIP-A 3 Isolated Transistors & 1 Differential Amp. 0°C to +85°C TYPE ULS-2045H, ULN-2046A, and
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ULN2151D motorola transistor 7439 741TC sprague transistors MC1304 SN75474 ICL8008CTY ULN2151M ITT512 ITT552 ITT554

transistor databook

Abstract: GENERAL INFORMATION As a recognised world leader in the field of Power Transistors, SGS-THOMSON is strongly committed to producing state-of-the art Power Bipolar Transistors. These devices have been specifically developed to optimise price/performance ratio for the most important switching and linear applications. This second edition of the Power Bipolar Transistor databook contains new and , in the T0-220 and SOT32 packages. Selection and cross-reference guides are provided in the following
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transistor databook

IGBT cross-reference

Abstract: AN9006 transistors having a planar gate structure. They also have wide noise Cross-reference immunity. These devices , Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity , applications Insulated Gate Bipolar Transistors (IGBTs) New products with a trench gate structure provide , Gate Bipolar Transistors (IGBTs) New products with a trench gate structure provide superior Product
Fairchild Semiconductor
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IGBT cross-reference AN9006 SGR20N40LTF IGBT application note IGBT Pspice SGR20N40L SGU20N40L SGU20N40LTU AN-9006

SM 4108

Abstract: TOPFETs FETs SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS , .4-5 General-purpose low-frequency transistors , .4-19 Switching transistors .4-21 High-voltage transistors , . 4-47 Tuner transistors
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SM 4108 TOPFETs FETs 484 am RS 432 marking codes medium power transistors

pc controlled car circuit diagram

Abstract: Cross-Reference for ? Really the Same? Maybe? The Cross-Reference Challenge By: Bill Laumeister Abstract: Parts cross-reference charts are created because customers want second sources to protect them from supply shortages , to ensure compatibility between parts from two manufacturers. Introduction A cross-reference , that the IC is application specific. In fact, a cross-reference chart is only as good as the , design success with pin-for-pin compatible parts, you must know how to manage the cross-reference
Maxim Integrated Products
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MAX6195 AN4425 APP4425 pc controlled car circuit diagram Cross-Reference for 4425 ic

tda 3611

Abstract: RCA 3086 , OR, or NOR logic gates, high-current switching transistors, and transient suppression diodes on the same chip. The two output transistors are capable of simultaneously sinking 300 mA continuously. In the , CIRCUIT CROSS REFERENCE GUIDE O.E.M. TO SPRAGUE I Alpha-Numeric CROSS-REFERENCE to SPRAGUE Integrated , CROSS-REFERENCE to SPRAGUE Integrated Circuits To Replace Use Sprague Type To Replace Use Sprague Type To , CROSS REFERENCE GUIDE O.E.M. TO SPRAGUE Original Source CROSS-REFERENCE to SPRAGUE Integrated Circuits
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SFC2741C tda 3611 RCA 3086 3613m mc1305p SN76116 MIL-M-38510 MIL-STD-883 UDN-3611M UDN-3611H UDS-3611H UDN-3612M
Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , applications Dotted line field effect transistors are produced using This pagePrint version Quality and , on-state resistance, Cross-reference provide superior switching performance, and search withstand high Fairchild Semiconductor
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FQI10N20TU
Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , transistors are produced using This pagePrint version Quality and reliability New products Fairchild , technology has been especially parametric search tailored to minimize on-state resistance, Cross-reference Fairchild Semiconductor
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FQI2N50TU
Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , transistors are produced using This pagePrint version Quality and reliability New products Fairchild , technology has been especially parametric search tailored to minimize on-state resistance, Cross-reference Fairchild Semiconductor
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FQI16N15TU
Abstract: and applications New products Product selection and parametric search Cross-reference search , transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced , Optoelectronics Markets and applications New products Product selection and parametric search Cross-reference , field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology Fairchild Semiconductor
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FQU6N40TU FQU6N40
Abstract: Optoelectronics Markets and These N-Channel enhancement mode power applications field effect transistors are , , Cross-reference provide superior switching performance, and search withstand high energy pulse in the avalanche , power applications field effect transistors are produced using New products Fairchild's proprietary , parametric search tailored to minimize on-state resistance, Cross-reference provide superior switching Fairchild Semiconductor
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FQI2N90TU
Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , N-Channel enhancement mode power applications Dotted line field effect transistors are produced using This , parametric search tailored to minimize on-state resistance, Cross-reference provide superior switching Fairchild Semiconductor
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FQI14N30TU
Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , N-Channel enhancement mode power applications Dotted line field effect transistors are produced using This , parametric search tailored to minimize on-state resistance, Cross-reference provide superior switching Fairchild Semiconductor
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FQI2N30TU
Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior Fairchild Semiconductor
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FQI14N15TU

FQB27N25

Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , N-Channel enhancement mode power applications Dotted line field effect transistors are produced using This , parametric search tailored to minimize on-state resistance, Cross-reference provide superior switching
Fairchild Semiconductor
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FQB27N25 FQI27N25TU

FQB19N20TM

Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , line field effect transistors are produced using This pagePrint version Quality and reliability New , resistance, Cross-reference provide superior switching performance, and search withstand high energy pulse in
Fairchild Semiconductor
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FQB19N20TM FQI19N20TU
Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , mode power applications Dotted line field effect transistors are produced using This pagePrint version , tailored to minimize on-state resistance, Cross-reference provide superior switching performance, and Fairchild Semiconductor
Original
FQI16N25TU
Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , line field effect transistors are produced using This pagePrint version Quality and reliability New , resistance, Cross-reference provide superior switching performance, and search withstand high energy pulse in Fairchild Semiconductor
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FQI12N20TU

IPS76SB10

Abstract: mgs225 PREFACE Dear Customer We are pleased to issue Philips Semiconductors' `Small-Signal Transistors , small-signal transistors and diodes (SC10 supersedes SC01 and SC04) · Small-signal transistors and diodes at a , as a package cross-reference guide, replacement list and packing quantities per package · Survey of , broad product portfolio of small-signal transistors and diodes, which includes: · General purpose amplification and switching transistors · Switching transistors · High-amplification Darlington transistors ·
Philips Semiconductors
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PDTC144EEF 1PS89SS04 1PS89SS05 1PS89SS06 IPS76SB10 mgs225 IPS76SB70 IPS76SB40 IPS79SB40 IPS79SB10 BC857F 2PC4617J 2PA1774J PDTC114EEF PDTA123JEF PDTC124XEF
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