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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistors crossreference

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR REPLACEMENT GUIDE

Abstract: ULN2083 array Temperature Number Package Description Range ULS-2045H 14-P n Hermetic DIP - H 3 Isolated Transistors & 1 Differential Amp. â'"55°Cto+125°C ULN-2046A 14-P n Plastic DIP-A 3 Isolated Transistors & 1 Differential Amp , Plastic DIP-A 7 Transistors with Common Emitters â'"40°C to +85°C ULN-2082A 16-P n Plastic DIP-A 7 Transistors with Common Collectors â'"40°C to +85°C ULN-2083A 16-P n Hermetic DIP - H 5 Transistor Array 0 , Plastic DIP-A 3 Isolated Transistors & 1 Differential Amp. 0°C to +85°C TYPE ULS-2045H, ULN-2046A, and
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SN76116N ULN2218 SFC2741 TRANSISTOR REPLACEMENT GUIDE ULN2083 array MC1310P sfc*2741 TBA221 All in one TRANSISTOR REPLACEMENT GUIDE ULN-2047A ULN-2054A ULN-2081A ULS-2083H ULN-2086A SN75462P

motorola transistor 7439

Abstract: 741TC Temperature Number Package Description Range ULS-2045H 14-P n Hermetic DIP - H 3 Isolated Transistors & 1 Differential Amp. â'"55°Cto+125°C ULN-2046A 14-P n Plastic DIP-A 3 Isolated Transistors & 1 Differential Amp , Plastic DIP-A 7 Transistors with Common Emitters â'"40°C to +85°C ULN-2082A 16-P n Plastic DIP-A 7 Transistors with Common Collectors â'"40°C to +85°C ULN-2083A 16-P n Hermetic DIP - H 5 Transistor Array 0 , Plastic DIP-A 3 Isolated Transistors & 1 Differential Amp. 0°C to +85°C TYPE ULS-2045H, ULN-2046A, and
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ULN2151D motorola transistor 7439 741TC sprague transistors MC1304 SN75474 ICL8008CTY ULN2151M ITT512 ITT552 ITT554
Abstract: GENERAL INFORMATION As a recognised world leader in the field of Power Transistors, SGS-THOMSON is strongly committed to producing state-of-the art Power Bipolar Transistors. These devices have been specifically developed to optimise price/performance ratio for the most important switching and linear applications. This second edition of the Power Bipolar Transistor databook contains new and , in the T0-220 and SOT32 packages. Selection and cross-reference guides are provided in the following -
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IGBT cross-reference

Abstract: AN9006 transistors having a planar gate structure. They also have wide noise Cross-reference immunity. These devices , Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity , applications Insulated Gate Bipolar Transistors (IGBTs) New products with a trench gate structure provide , Gate Bipolar Transistors (IGBTs) New products with a trench gate structure provide superior Product
Fairchild Semiconductor
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IGBT cross-reference AN9006 SGR20N40LTF IGBT application note IGBT Pspice SGR20N40L SGU20N40L SGU20N40LTU AN-9006

SM 4108

Abstract: TOPFETs FETs SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS , .4-5 General-purpose low-frequency transistors , .4-19 Switching transistors .4-21 High-voltage transistors , . 4-47 Tuner transistors
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SM 4108 TOPFETs FETs 484 am RS 432 marking codes medium power transistors

pc controlled car circuit diagram

Abstract: Cross-Reference for ? Really the Same? Maybe? The Cross-Reference Challenge By: Bill Laumeister Abstract: Parts cross-reference charts are created because customers want second sources to protect them from supply shortages , to ensure compatibility between parts from two manufacturers. Introduction A cross-reference , that the IC is application specific. In fact, a cross-reference chart is only as good as the , design success with pin-for-pin compatible parts, you must know how to manage the cross-reference
Maxim Integrated Products
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MAX6195 AN4425 APP4425 pc controlled car circuit diagram Cross-Reference for 4425 ic

tda 3611

Abstract: RCA 3086 , OR, or NOR logic gates, high-current switching transistors, and transient suppression diodes on the same chip. The two output transistors are capable of simultaneously sinking 300 mA continuously. In the , CIRCUIT CROSS REFERENCE GUIDE O.E.M. TO SPRAGUE I Alpha-Numeric CROSS-REFERENCE to SPRAGUE Integrated , CROSS-REFERENCE to SPRAGUE Integrated Circuits To Replace Use Sprague Type To Replace Use Sprague Type To , CROSS REFERENCE GUIDE O.E.M. TO SPRAGUE Original Source CROSS-REFERENCE to SPRAGUE Integrated Circuits
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SFC2741C tda 3611 RCA 3086 3613m mc1305p SN76116 MIL-M-38510 MIL-STD-883 UDN-3611M UDN-3611H UDS-3611H UDN-3612M
Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , applications Dotted line field effect transistors are produced using This pagePrint version Quality and , on-state resistance, Cross-reference provide superior switching performance, and search withstand high Fairchild Semiconductor
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FQI10N20TU
Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , transistors are produced using This pagePrint version Quality and reliability New products Fairchild , technology has been especially parametric search tailored to minimize on-state resistance, Cross-reference Fairchild Semiconductor
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FQI2N50TU
Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , transistors are produced using This pagePrint version Quality and reliability New products Fairchild , technology has been especially parametric search tailored to minimize on-state resistance, Cross-reference Fairchild Semiconductor
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FQI16N15TU
Abstract: and applications New products Product selection and parametric search Cross-reference search , transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced , Optoelectronics Markets and applications New products Product selection and parametric search Cross-reference , field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology Fairchild Semiconductor
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FQU6N40TU FQU6N40
Abstract: Optoelectronics Markets and These N-Channel enhancement mode power applications field effect transistors are , , Cross-reference provide superior switching performance, and search withstand high energy pulse in the avalanche , power applications field effect transistors are produced using New products Fairchild's proprietary , parametric search tailored to minimize on-state resistance, Cross-reference provide superior switching Fairchild Semiconductor
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FQI2N90TU
Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , N-Channel enhancement mode power applications Dotted line field effect transistors are produced using This , parametric search tailored to minimize on-state resistance, Cross-reference provide superior switching Fairchild Semiconductor
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FQI14N30TU
Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , N-Channel enhancement mode power applications Dotted line field effect transistors are produced using This , parametric search tailored to minimize on-state resistance, Cross-reference provide superior switching Fairchild Semiconductor
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FQI2N30TU
Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior Fairchild Semiconductor
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FQI14N15TU

FQB27N25

Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , N-Channel enhancement mode power applications Dotted line field effect transistors are produced using This , parametric search tailored to minimize on-state resistance, Cross-reference provide superior switching
Fairchild Semiconductor
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FQB27N25 FQI27N25TU

FQB19N20TM

Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , line field effect transistors are produced using This pagePrint version Quality and reliability New , resistance, Cross-reference provide superior switching performance, and search withstand high energy pulse in
Fairchild Semiconductor
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FQB19N20TM FQI19N20TU
Abstract: Markets and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors , has been especially parametric search tailored to minimize on-state resistance, Cross-reference , mode power applications Dotted line field effect transistors are produced using This pagePrint version , tailored to minimize on-state resistance, Cross-reference provide superior switching performance, and Fairchild Semiconductor
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FQI16N25TU
Abstract: and mail] These N-Channel enhancement mode power applications Dotted line field effect transistors are , especially parametric search tailored to minimize on-state resistance, Cross-reference provide superior , line field effect transistors are produced using This pagePrint version Quality and reliability New , resistance, Cross-reference provide superior switching performance, and search withstand high energy pulse in Fairchild Semiconductor
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FQI12N20TU

IPS76SB10

Abstract: mgs225 PREFACE Dear Customer We are pleased to issue Philips Semiconductors' `Small-Signal Transistors , small-signal transistors and diodes (SC10 supersedes SC01 and SC04) · Small-signal transistors and diodes at a , as a package cross-reference guide, replacement list and packing quantities per package · Survey of , broad product portfolio of small-signal transistors and diodes, which includes: · General purpose amplification and switching transistors · Switching transistors · High-amplification Darlington transistors ·
Philips Semiconductors
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PDTC144EEF 1PS89SS04 1PS89SS05 1PS89SS06 IPS76SB10 mgs225 IPS76SB70 IPS76SB40 IPS79SB40 IPS79SB10 BC857F 2PC4617J 2PA1774J PDTC114EEF PDTA123JEF PDTC124XEF
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