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PCM1702U/2K Texas Instruments 120dB SNR Stereo DAC with BiCMOS Advanced Sign Magnitude Architecture 20-SO
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TPS22924BYZPRB Texas Instruments 3.6V, 2A, 18.3mΩ Load Switch with Quick Output Discharge 6-DSBGA -40 to 85
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transistor w 431

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor Applications â'¢ â'¢ â'¢ â'¢ â'¢ â , ® T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor Specifications Absolute Maximum Ratings , a l Ne two rk® T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor Specifications (cont , rld to the Glo b a l Ne two rk® T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor Load , Wo rld to the Glo b a l Ne two rk® T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor TriQuint Semiconductor
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TIC 122 Transistor transistor 431 smd transistor SE 431 6 pin TRANSISTOR SMD CODE tm transistor je 123 EAR99
Abstract: T1G6001528-Q3 DC ­ 6 GHz 18 W GaN RF Power Transistor Applications · · · · · · · , Digital World to the Global Network® T1G6001528-Q3 DC ­ 6 GHz 18 W GaN RF Power Transistor , DC ­ 6 GHz 18 W GaN RF Power Transistor Load Pull Data RF performance that the device typically , Digital World to the Global Network® T1G6001528-Q3 DC ­ 6 GHz 18 W GaN RF Power Transistor Typical , 18 W GaN RF Power Transistor Typical Performance (cont.) Performance is measured at DUT reference TriQuint Semiconductor
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transistor SMD p90 smd transistor 901 100A150JW500XC 431 TRANSISTOR smd RO3203 S2834
Abstract: factor = 2.0 W/°C up to and including T.- = +200°C. 2/ Pulsed (see 4.3.1 herein) = 90A. 3/ _ , above J/ 2/ See 4.3.3 herein. See 4.3.1 herein. 3/ With the transistor mounted in normal mounting , MILITARY SPECIFICATION Semiconductor Device, Transistor, NPN, Silicon Power Types 2N5926 and TX2N5926 , February 1975 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON POWER TYPE 2N5926 and , ) covered herein, the term 'inspection lot' shall be as defined in paragraph 4.3.1 of specification MIL-S -
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c2689 Z027 diode cc 3053 diode Z027 D0D012 cc 3053 MIL-S-19500/447 MIL-S-19500/477 MIL-S-19500 5961-A340
Abstract: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode , reversal protection 431DD SPDT relay with internal transistor driver and coil transient suppression , Weight 0.109 oz. (3.09g) max. 431 Page 1 The TO-5 relay, originally conceived and developed by , . Designed for high-density PC board mounting, its small size and low coil power dissipation make the 431 Teledyne Relays
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h a 431 transistor transistor 431t 431T 431T1 ER411M3-12A 722XM3-26 ER411T ER412 ER412T ER420
Abstract: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode , reversal protection 431DD SPDT relay with internal transistor driver and coil transient suppression , , its small size and low coil power dissipation make the 431 relay one of the most versatile , relay features an internal silicon suppression diode and transistor driver. This hybrid package Teledyne Relays
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J412 lm 431 DAtasheet TRANSISTOR 431 431 transistor a 431 transistor 431t-5 ER421 ER422 ER431T ER432 ER432T 712TN
Abstract: » BC 431 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and power stages Besondere Merkmale: â , £ 25°C,«thJA< 200°C/W Sperrschichttemperatur Junction temperature Lagerungstemperaturbereich Storage , V mA A mA mW mW °C °C 109 BC 431 0 40 80 120 °C 'amtr'case Wärmewiderstände Thermal , °C/W *thJA 200 °C/W *thJC 90 °C/W KenngröÃen Characteristics 'amb = 25 falls nicht anders -
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TRANSISTOR BC 431 transistor 431 c y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor CEO60
Abstract: Collector voltage Vce(V) POWER TRANSISTOR Type Pc [w] IC I IB (A] I (A) VCBO [v] VCEO (V) Vces (V) hFE , Dimensions Unit: mm 19±0.3 Ratings Item Symbol Unit ^""^^Type Conditions~^-^ 2SC 431 2SC 432 2SC 433 , current Ic A 30 Base current Ib A 10 Collector dissipation Pg W 200 Electrical , MAX 2 Thermal resistance Rth "C/W Between ¡unction and case 0.625 High-frequency , "C Vceâ'"5 V 2SC 432 L 434 \ 436 2SC\ 431 433 rv^435 10 15 20 Collector -
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MAX30 2SB206 2SB207 2SB208 2SB208A 2SB212 2SB205 2SC1466 2SB214 2sd206 1BMAX11 MAX50
Abstract: 431 [ 9 ] MULTI CHIP TRANSISTOR A R R A Y DATA SHEETS , SERIES . TRANSISTOR ARRAY SELECTION GUIDE , LINEUP . 1. 2. 3. 4. BIPOLAR TRANSISTOR ARRAYS . DMOS TRANSISTOR ARRAYS . MULTICHIP TRANSISTOR ARRAYS , ] PRODUCT O V E R V IE W AND APPLICATION E X A M P L E S -
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n 431 transistor a 103 m Transistor transistor 431 N Transistor Arrays transistor 431 a transistor TD/TB62
Abstract: wideband transistor FEATURES Product specification b7E J> BFG94 PINNING â'¢ High , collector DESCRIPTION DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. It is , /DISCRETE NPN 6 GHz wideband transistor Product specification L7E » BFG94 LIMITING VALUES In , soldering point CONDITIONS up to T9= 140 °C (note 1) THERMAL RESISTANCE 50K/W Note 1. Ts is the , PHILIPS/DISCRETE NPN 6 GHz wideband transistor Product specification b?E T > BFG94 -
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Ghz dB transistor S3T31
Abstract: Sink Lubricated Rees _ 0.6 °C/W Thermal Resistance, Junction to Case Rwc Transistor Part â'" â , , Ybungwood, Pennsylvania 1S697 (412) 925-7272 SÌX- DSflinCftOFI P Transistor Module 8 Amperes/300 Volts I COM ECHO XOiMftAU CT iZri tipâ'" â'"i e«p-1 -t>-w< i-C * s.h-T x 8»k-r ; ; y y y 300 Volt KEE225B0 Outline Drawing KEE22.5B0 Six-Darlington Module Transistor Module 8 Amperes/300 Volts , ±0.1 Dia. Note: Each Transistor symbol represents a Darlington Transistor with base emitter resistors on -
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KEE225BD 300 volt 5 ampere transistor transistor TF 431 tip 300 volts 50 amperes TIP 22 transistor transistor tip 412
Abstract: an enhanced version of the industry standard 431. It is a three terminal shunt regulator giving , lower than industry standard 431 parts. (Please refer to Appendix A) Following are a few example , ' versions of the '431 generally require values of 3.3uF or greater). Switch-Mode Power Supply , loads greater than a few milliamps losses can be significant. H o w e v e r , a s e r i e s r e g u l , using a ZR431 to perform all but the pass transistor functi on. F igure 3 shows a series regulator Zetex Semiconductors
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ZTX108B ZR431Q1 ic 431 431 sot23 431 regulator FMMT493
Abstract: LMV 431 A SOT23-3 TO92: Plastic Package Top View SOT23-5 20030819 , ds100958 11800 24060 33200 24180 19880809 LMV 431 LMV431/LMV431A/LMV431B (1.24V , 0.05mA 3mA LMV431C TA 25 www.national.com/JPN/ 161 /W ( - 1/ JA) TO92 /SOT23 -5SOT23-3 (Note 2) TO92 SOT23-5SOT23-3 455 /W TO-92 0 70 , /LMV431A/LMV431B inches (millimeters) SOT23-5 Molded Small Outline Transistor Package (M5) NS National Semiconductor
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LMV431B MA05A MF05A sot23-5 transistor T1 431 SOT23-5 Package M5 SOT23 transistor 028W r2rz R2 sot23-3 LMV431AI 39PPM/ LMV431
Abstract: DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching , Thermal Resistance JA Thermal Resistance UNITS V V V A A A A A A W W 400 700 9.0 4.0 8.0 2.0 4.0 6.0 12 2.0 75 -65 to +150 °C °C/W 1.67 JC 62.5 °C/W ELECTRICAL , MJE13005 NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (CONTINUED) TEST CONDITIONS SYMBOL MIN Central Semiconductor
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NPN Transistor TO220 VCEO 50v i 10A TRANSISTOR a 1270
Abstract: LMV 431 A SOT23-3 TO92: Plastic Package Top View SOT23-5 20030819 , ds100958 11800 24060 33200 24180 19880809 LMV 431 LMV431/LMV431A/LMV431B (1.24V , 0.05mA 3mA LMV431C TA 25 www.national.com/JPN/ 161 /W ( - 1/ JA) TO92 /SOT23 -5SOT23-3 (Note 2) TO92 SOT23-5SOT23-3 455 /W TO-92 0 70 , /LMV431A/LMV431B inches (millimeters) SOT23-5 Molded Small Outline Transistor Package (M5) NS National Semiconductor
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T1 SOT23-3 low noise transistor sot23 LM431 JR SOT23-3 DS100958-13-JP MF03A CSP-9-111C2 CSP-9-111S2
Abstract: N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES â'¢ BSN204 , 3 Vos DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope , specification N-channel enhancement mode vertical D-MOS transistor BSN204/BSN204A LIMITING VALUES In , total power dissipation up t o T , ^ 25 °C - 1 W storage temperature range J j , P«i (â  * PARAMETER from junction to ambient (note 1) VALUE 125 UNIT K/W Note 1 -
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BSN204A
Abstract: CMPTA27 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR Central" Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA27 type is a Silicon NPN Darlington Transistor manufactured by the , Storage Junction Temperature Thermal Resistance Tj.Tstg 0 JA -65 to +150 357 °C °c /w v CBO VCES v EBO *C , Corp. CMPTA27 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE , 0.50 SOT-23 (REV: R3) R5 (20-February 2003) 431 -
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sot-23 MARKING CODE 431 sot 23 marking code 431 839 transistor transistor c 839 431 marking code sot transistor marking code 431 100MH CP307
Abstract: 2 5 125 7 10 PTC 431 400 325 400 Unit Volts Volts Volts A A A A W A A Conditions TC = 25 , · Solenoid Drivers SPECIFICATIONS General The PTC 430 and PTC 431 Powermode series transistors , 00003E3 3 | SERIES PTC 430, PTC 431 High Voltage Fast Switching NPN Transistors Absolute maximum , Unit °C/W Conditions °c °c tJ.tSTG D IN ACCORDANCE WITH JEDEC REGISTRATION DATA. H PULSE TEST: PW = 300 /*s, DUTY CYCLE 2% m A LLEN -BR A D LEY MANUFACTURED BY POWER TRANSISTOR COMPONENTS -
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T0-204MA Transistor PJ 431 PTC430
Abstract: Transistor Anwendungen: Treiber und Endstufen Applications: Driver and power stages Besondere Merkmale: â , '¢ Komplementär zu BC 431 Features: â'¢ High reverse voltage â'¢ Power dissipation 625 mW â'¢ In groups selected â'¢ Matched pairs available â'¢ Complementary to BC 431 Abmessungen in mm Dimensions in mm , '" 25^thJA ~ 200°c/w Sperrschichttemperatur Junction temperature Lagerungstemperaturbereich Storage , V V V mA A mA mW mW °C B 2/V.2.489/0875 A 1 115 BC 432 t 'tot 1,0 W 0,8 0,6 0,4 0,2 -
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TFK u 116 TFK 236 6tfk transistor BC 236 BC431 tfk 106
Abstract: 435 435 435 435 435 435 435 435 434 435 435 435 435 431 432 432 432 437 437 435 431 433 433 435 435 435 431 431 436 431 432 435 435 433 435 431 432 430 430 435 436 436 430 426 426 427 427 426 426 426 , 81-0050 47-2538 81-0052 81-0138 81-0140 47-3402 47-3444 81-0404 Page Number 431 434 436 427 433 427 437 432 432 432 434 434 427 432 432 436 436 437 437 427 427 432 432 433 432 433 434 431 427 430 427 429 430 429 430 431 431 436 430 431 431 431 436 431 431 436 434 430 434 433 433 433 434 430 434 434 Rapid Electronics Catalog
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2SA1085E 2SC2547E BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V DO-15 DO-201AD T0202-3 1N914 1N4001 1N4002
Abstract: BSN204/BSN204A N-channel enhancement mode vertical D-MOS transistor FEATURES â'¢ Direct interface to , enhancement mode verticaf D-MOS transistor in a TO-92 envelope, intended for use as a line current interrupter , D-MOS transistor BSN204/BSN204A LIMITING VALUES In accordance with the Absolute Maximum System (I EC , PM total power dissipation uptoTort = 25°C - 1 W "U storage temperature range -65 150 °C Ti , (note 1 ) 125 K/W Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm -
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tL 431 transistor transistor tl 431
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