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transistor w 431

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Abstract: 431 [ 9 ] MULTI CHIP TRANSISTOR A R R A Y DATA SHEETS , SERIES . TRANSISTOR ARRAY SELECTION GUIDE , LINEUP . 1. 2. 3. 4. BIPOLAR TRANSISTOR ARRAYS . DMOS TRANSISTOR ARRAYS . MULTICHIP TRANSISTOR ARRAYS , ] PRODUCT O V E R V IE W AND APPLICATION E X A M P L E S ... OCR Scan
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2 pages,
30.45 Kb

"Transistor Arrays" Transistor Arrays E 32 TRANSISTOR y 431 transistor transistor 431 N transistor 431 a 103 m Transistor transistor 431 a n 431 transistor transistor 431 c a 431 transistor transistor w 431 datasheet abstract
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Abstract: » BC 431 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor , Base current Gesamtverlustleistung Total power dissipation 'amb = 25 °C 'amb £ 25°C,«thJA< 200°C/W , 431 0 40 80 120 °C 'amtr'case Wärmewiderstände Thermal resistances Sperrschicht-Umgebung Junction , Sperrschicht-Gehäuse Junction case Min. Typ. Max. *thJA 250 °C/W *thJA 200 °C/W *thJC 90 °C/W Kenngrößen , cut-off current UCE = 60 V /CES 100 nA i/CE = 60V,/amb=25°C /CES 10 MA 110 BC 431 ... OCR Scan
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5 pages,
97.65 Kb

bc 431 TRANSISTOR BC 113 IC 431 BC 109 Transistor bc 431 transistor transistor 431 a TRANSISTOR BC 109 transistor BC 236 y 431 transistor transistor bc 488 bc 106 transistor 431 transistor a 431 transistor datasheet abstract
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Abstract: Case Rwc Transistor Part - - 2.0 °C/W Thermal Resistance, Junction to Case Rwc Diode Part - - 3.0 °C/W , , Ybungwood, Pennsylvania 1S697 1S697 (412) 925-7272 SÌX- DSflinCftOFI P Transistor Module 8 Amperes/300 Amperes/300 Volts I COM ECHO XOiMftAU CT iZri tip- -i e«p-1 -t>-w< i-C * s.h-T x 8»k-r ; ; y y y 300 Volt KEE225B0 KEE225B0 Outline Drawing KEE22 KEE22.5B0 Six-Darlington Module Transistor Module 8 Amperes/300 Amperes/300 Volts , Note: Each Transistor symbol represents a Darlington Transistor with base emitter resistors on each ... OCR Scan
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2 pages,
85.13 Kb

1S697 200 Ampere power transistor 200 Ampere transistor a 431 transistor DIODE 150-29 KEE225B0 KEE225BD TRANSISTOR 431 transistor 431 c transistor tip 412 TIP 22 transistor tip 300 volts 50 amperes transistor w 431 datasheet abstract
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Abstract: CMPTA27 CMPTA27 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR Central" Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA27 CMPTA27 type is a Silicon NPN Darlington Transistor manufactured by the , Storage Junction Temperature Thermal Resistance Tj.Tstg 0 JA -65 to +150 357 °C °c /w v CBO VCES v EBO *C , Corp. CMPTA27 CMPTA27 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE , 0.50 SOT-23 (REV: R3) R5 (20-February 2003) 431 ... OCR Scan
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2 pages,
2611.93 Kb

marking 431 sot-23 transistor c 839 431 marking code sot transistor marking code 431 sot 23 marking code 431 839 transistor h a 431 transistor sot-23 MARKING CODE 431 CMPTA27 CMPTA27 abstract
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Abstract: DATA SHEET MJE13005 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching , Thermal Resistance JA Thermal Resistance UNITS V V V A A A A A A W W 400 700 9.0 4.0 8.0 2.0 4.0 6.0 12 2.0 75 -65 to +150 °C °C/W 1.67 JC 62.5 °C/W ELECTRICAL , MJE13005 MJE13005 NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (CONTINUED) TEST CONDITIONS SYMBOL MIN ... Original
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2 pages,
112.54 Kb

transistor TF 431 MJE13005 IC 431 transistor w 431 NPN Transistor TO220 VCEO 50v i 10A h a 431 transistor MJE13005 abstract
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Abstract: j-a max. 500 K/W CHARACTERISTICS Tamb = 25 °c unless otherwise stated transistor TI T2 , - b.b53131 0024551 557 HAPX N AMER PHILIPS/DISCRETE b?E D BCV63 BCV63 BCV63B BCV63B SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64 BCV64. QUICK REFERENCE DATA transistor T1 T2 Collector-emitter voltage (open base , 1 April 1991 431 This Material Copyrighted By Its Respective Manufacturer - bbSa^Bl D024552 D024552 4=13 ... OCR Scan
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3 pages,
58.9 Kb

d95 transistor BCV64 BCV63B BCV63 557 SOT-143 n 431 transistor y 431 transistor transistor 431 a transistor c 557 SCHMITT-TRIGGER application 557 sot-143 MARKING 557 sot143 marking 557 SOT143 transistor marking code 431 BCV63 abstract
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Abstract: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode , reversal protection 431DD 431DD SPDT relay with internal transistor driver and coil transient suppression , , its small size and low coil power dissipation make the 431 relay one of the most versatile , relay features an internal silicon suppression diode and transistor driver. This hybrid package ... Original
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6 pages,
140.95 Kb

431 transistor 431D TRANSISTOR 431 a 431 transistor lm 431 DAtasheet J412 transistor w 431 431T h a 431 transistor transistor 431t datasheet abstract
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Abstract: BSN204/BSN204A BSN204/BSN204A N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to , mode verticaf D-MOS transistor in a TO-92 envelope, intended for use as a line current interrupter in , D-MOS transistor BSN204/BSN204A BSN204/BSN204A LIMITING VALUES In accordance with the Absolute Maximum System (I EC , PM total power dissipation uptoTort = 25°C - 1 W "U storage temperature range -65 150 °C Ti , (note 1 ) 125 K/W Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm ... OCR Scan
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5 pages,
91.36 Kb

transistor tl 431 BSN204A BSN204 tL 431 transistor transistor w 431 BSN204/BSN204A BSN204/BSN204A abstract
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Abstract: silicon NPN epitaxial planer type transistor for liner power amplifiers in U H F band. OUTLINE DRAWING , = 7 7 0 M H z, P0 = 40W , l D = 100m A Low thermal resistance ceramic package w ith flange. A b , M H z, PQ = 40W , l D = 100m A , class AB condition High Input-lmpedance Transistor {H I2 T , specified) Conditions Ratings 45 4 Rbe Unit V V V A W =co 35 6 Pc T1 T c = 25"C 75 + 175 - 5 5 - +175 T stg R th-c Junction to casn 2 c c c/w ELECTRICAL CHARACTERISTICS Symbol ... OCR Scan
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3 pages,
167.81 Kb

transistor 431 ab h a 431 transistor datasheet abstract
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Abstract: POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C narrowband amplifier , good balance of dissipated power and low thermal resistance The transistor is housed in a metal ceramic , unneutralized common-base class-C narrowband amplifier. mode of operation f GHz vcc V PL W Gp dB nc % zi ZL n , N AMER PHILIPS/DISCRETE Pulsed microwave power transistor ObE D - hb53131 001520^ H - RZB12250Y RZB12250Y , from the case. ts|d < 10 s 500 Ptot (W> 250 ic Ptot Tstg Tj Tsld 7Z94228 7Z94228 max. 15 A max. 450 ... OCR Scan
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4 pages,
119.36 Kb

transistor 431 N RZB12250Y transistor w 431 h a 431 transistor RZB12250Y abstract
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darlington transistor) represented by R6 of Fig 5 is approximately 3.5 M W . Consequently the second transistor. HIGH correspond 100 W . LOW corresponds no load. Response with 10 m F, ESR = 4.7 W ; 0.5V : Middle trace: Bottom trace: Drive of load transistor. HIGH correspond 100 W load. LOW corresponds no PR + R6 ) R PR + R5 + R6 (4.3.1) With R PR being the external resistor R5 = 20K W and satisfy both technical and economical requirements of the customer. Quite soon the power transistor was
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1852.htm
STMicroelectronics 20/10/2000 37.24 Kb HTM 1852.htm
trace Drive of load transistor. HIGH correspond 100 W . LOW corresponds no load. Response with transistor. HIGH correspond 100 W load. LOW corresponds no load. Response with 10 m F, ESR (4.3.1) With R PR being the external resistor R5 = 20K W and R6 = 80K W , R5 and R6 are customer. Quite soon the power transistor was integrated. It was implemented as a NPN transistor (mostly using an darlington output transistor consisting of a PNP driver and a NPN power transistor. This
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1852-v3.htm
STMicroelectronics 25/05/2000 36.21 Kb HTM 1852-v3.htm
actu- ally is a darlington transistor) represented by R6 of Fig 5 is approximately 3.5 M W . transistor. HIGH correspond 100 W . LOW corresponds no load. Response with 10 m F, ESR = 4.7 W ; 0.5V : Middle trace: Bottom trace: Drive of load transistor. HIGH correspond 100 W load. LOW corresponds no transistor was integrated. It was implemented as a NPN transistor (mostly in dar- lington configuration required drop. The next step was the low drop regulator using an darlington output transistor consisting of
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1852-v1.htm
STMicroelectronics 02/04/1999 34.42 Kb HTM 1852-v1.htm
actu- ally is a darlington transistor) represented by R6 of Fig 5 is approximately 3.5 M W . transistor. HIGH correspond 100 W . LOW corresponds no load. Response with 10 m F, ESR = 4.7 W ; 0.5V : Middle trace: Bottom trace: Drive of load transistor. HIGH correspond 100 W load. LOW corresponds no transistor was integrated. It was implemented as a NPN transistor (mostly in dar- lington configuration required drop. The next step was the low drop regulator using an darlington output transistor consisting of
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1852-v2.htm
STMicroelectronics 14/06/1999 34.38 Kb HTM 1852-v2.htm
values of Cx and Rx : Cx : NO LIMIT Rx : V CC < 3.0 V 5 K W to 1 M W V CC . 3.0 V 1 K W to 1 M W All inputs are equipped with protection circuits against static discharge and transient excess stand-by state. Hence, before triggering, transistor Qp and Qn (connected to the Rx/Cx node) are both I.C. can be ignored, the width of the output pulse tw (out) is as follows : t W(OUT) = 0.46 Cx V Rx (HC423 HC423 HC423 HC423) t W(OUT) = Cx V Rx (HC423A HC423A HC423A HC423A) M54/M74HC423/423A M54/M74HC423/423A M54/M74HC423/423A M54/M74HC423/423A 3/14 FUNCTIONAL DESCRIPTION
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1974.htm
STMicroelectronics 20/10/2000 16.36 Kb HTM 1974.htm
period longer. Limit for values of Cx and Rx : Cx : NO LIMIT Rx : V CC < 3.0 V 5 K W to 1 M W V CC . 3.0 V 1 K W to 1 M W All inputs are equipped with protection circuits against triggering, transistor Qp and Qn (connected to the Rx/Cx node) are both turned-off. The two comparators : t W(OUT) = 0.46 Cx V Rx (HC423 HC423 HC423 HC423) t W(OUT) = Cx V Rx (HC423A HC423A HC423A HC423A) M54/M74HC423/423A M54/M74HC423/423A M54/M74HC423/423A M54/M74HC423/423A 3/14 is reset. Also transistor Op is turned on and Cx is charged quicky to V CC . This means if CL
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1974-v3.htm
STMicroelectronics 25/05/2000 15.52 Kb HTM 1974-v3.htm
Limit for values of Cx and Rx : Cx : NO LIMIT Rx : V CC < 3.0 V 5 K W to 1 M W V CC . 3.0 V 1 K W to 1 M W All inputs are equipped with protection circuits against static discharge and transient excess , transistor Qp and Qn (connected to the Rx/Cx node) are both turned-off. The two comparators that control the follows : t W(OUT) = 0.46 Cx V Rx (HC423 HC423 HC423 HC423) t W(OUT) = Cx V Rx (HC423A HC423A HC423A HC423A) M54/M74HC423/423A M54/M74HC423/423A M54/M74HC423/423A M54/M74HC423/423A 3/14 FUNCTIONAL because Q output goes low and trigger control flip-flop is reset. Also transistor Op is turned on and Cx
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1974-v1.htm
STMicroelectronics 02/04/1999 13.71 Kb HTM 1974-v1.htm
Limit for values of Cx and Rx : Cx : NO LIMIT Rx : V CC < 3.0 V 5 K W to 1 M W V CC . 3.0 V 1 K W to 1 M W All inputs are equipped with protection circuits against static discharge and transient excess , transistor Qp and Qn (connected to the Rx/Cx node) are both turned-off. The two comparators that control the follows : t W(OUT) = 0.46 Cx V Rx (HC423 HC423 HC423 HC423) t W(OUT) = Cx V Rx (HC423A HC423A HC423A HC423A) M54/M74HC423/423A M54/M74HC423/423A M54/M74HC423/423A M54/M74HC423/423A 3/14 FUNCTIONAL because Q output goes low and trigger control flip-flop is reset. Also transistor Op is turned on and Cx
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1974-v2.htm
STMicroelectronics 14/06/1999 13.67 Kb HTM 1974-v2.htm
. 10K W , the output pulse width value is approssimatively given by the formula: t w(out) = K w Cx w W to 1 M W V CC . 3.0 V 1 K W to 1 M W All inputs are equipped with protection circuits time in the I.C. can be ignored, the width of the output pulse tw (out) is as follows : t W(OUT) = 0.46 Cx V Rx (HC123 HC123 HC123 HC123) t W(OUT) = Cx V Rx (HC123A HC123A HC123A HC123A) M54/M74HC123/123A M54/M74HC123/123A M54/M74HC123/123A M54/M74HC123/123A 3/14 FUNCTIONAL DESCRIPTION (continued output goes low and trigger con- trol flip-flop is reset. Also transistor Op is turned on and Cx is
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1893-v2.htm
STMicroelectronics 14/06/1999 14.08 Kb HTM 1893-v2.htm
. 10K W , the output pulse width value is approssimatively given by the formula: t w(out) = K w Cx w W to 1 M W V CC . 3.0 V 1 K W to 1 M W All inputs are equipped with protection circuits time in the I.C. can be ignored, the width of the output pulse tw (out) is as follows : t W(OUT) = 0.46 Cx V Rx (HC123 HC123 HC123 HC123) t W(OUT) = Cx V Rx (HC123A HC123A HC123A HC123A) M54/M74HC123/123A M54/M74HC123/123A M54/M74HC123/123A M54/M74HC123/123A 3/14 FUNCTIONAL DESCRIPTION (continued output goes low and trigger con- trol flip-flop is reset. Also transistor Op is turned on and Cx is
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1893-v1.htm
STMicroelectronics 02/04/1999 14.12 Kb HTM 1893-v1.htm