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BCV26_L99Z Fairchild Semiconductor Corporation PNP Darlington Transistor ri Buy
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KSA1156OSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy

transistor w 431

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Abstract: T1G6001528-Q3 T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • â , ® T1G6001528-Q3 T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Specifications Absolute Maximum Ratings , a l Ne two rk® T1G6001528-Q3 T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Specifications (cont , rld to the Glo b a l Ne two rk® T1G6001528-Q3 T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Load , Wo rld to the Glo b a l Ne two rk® T1G6001528-Q3 T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor ... TriQuint Semiconductor
Original
datasheet

15 pages,
458.84 Kb

transistor SE 431 transistor je 123 T1G6001528-Q3 TEXT
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Abstract: T1G6001528-Q3 T1G6001528-Q3 DC ­ 6 GHz 18 W GaN RF Power Transistor Applications · · · · · · · , Digital World to the Global Network® T1G6001528-Q3 T1G6001528-Q3 DC ­ 6 GHz 18 W GaN RF Power Transistor , DC ­ 6 GHz 18 W GaN RF Power Transistor Load Pull Data RF performance that the device typically , Digital World to the Global Network® T1G6001528-Q3 T1G6001528-Q3 DC ­ 6 GHz 18 W GaN RF Power Transistor Typical , 18 W GaN RF Power Transistor Typical Performance (cont.) Performance is measured at DUT reference ... TriQuint Semiconductor
Original
datasheet

15 pages,
480.79 Kb

RO3203 EAR99 431 TRANSISTOR smd 100A150JW500XC smd transistor 901 T1G6001528-Q3 transistor 431 smd transistor SMD p90 TEXT
datasheet frame
Abstract: factor = 2.0 W/°C up to and including T.- = +200°C. 2/ Pulsed (see 4.3.1 herein) = 90A. 3/ _ , above J/ 2/ See 4.3.3 herein. See 4.3.1 herein. 3/ With the transistor mounted in normal mounting , MILITARY SPECIFICATION Semiconductor Device, Transistor, NPN, Silicon Power Types 2N5926 2N5926 and TX2N5926 TX2N5926 , February 1975 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON POWER TYPE 2N5926 2N5926 and , ) covered herein, the term 'inspection lot' shall be as defined in paragraph 4.3.1 of specification MIL-S ... OCR Scan
datasheet

28 pages,
635.23 Kb

0G001 TX2N5926 tx transistor transistor AS 431 npn marking tx 2N5926 cc 3053 D0D012 diode Z027 diode cc 3053 Z027 c2689 MIL-S-19500/447 TEXT
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Abstract: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode , reversal protection 431DD 431DD SPDT relay with internal transistor driver and coil transient suppression , Weight 0.109 oz. (3.09g) max. 431 Page 1 The TO-5 relay, originally conceived and developed by , . Designed for high-density PC board mounting, its small size and low coil power dissipation make the 431 ... Teledyne Relays
Original
datasheet

6 pages,
161.83 Kb

h a 431 transistor TEXT
datasheet frame
Abstract: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode , reversal protection 431DD 431DD SPDT relay with internal transistor driver and coil transient suppression , , its small size and low coil power dissipation make the 431 relay one of the most versatile , relay features an internal silicon suppression diode and transistor driver. This hybrid package ... Teledyne Relays
Original
datasheet

6 pages,
140.95 Kb

y 431 transistor 431D 431t-5 a 431 transistor 431 transistor TRANSISTOR 431 lm 431 DAtasheet J412 transistor w 431 431T h a 431 transistor transistor 431t TEXT
datasheet frame
Abstract: » BC 431 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and power stages Besondere Merkmale: â , £ 25°C,«thJA< 200°C/W Sperrschichttemperatur Junction temperature Lagerungstemperaturbereich Storage , V mA A mA mW mW °C °C 109 BC 431 0 40 80 120 °C 'amtr'case Wärmewiderstände Thermal , °C/W *thJA 200 °C/W *thJC 90 °C/W Kenngrößen Characteristics 'amb = 25 falls nicht anders ... OCR Scan
datasheet

5 pages,
97.65 Kb

transistor BC 106 BC 109 Transistor TRANSISTOR BC 113 bc 431 transistor 431 a TRANSISTOR BC 109 bc 431 transistor transistor BC 236 w 431 transistor bc 106 transistor transistor bc 488 y 431 transistor a 431 transistor 431 transistor transistor 431 c TRANSISTOR 431 TRANSISTOR BC 431 transistor w 431 TEXT
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Abstract: Collector voltage Vce(V) POWER TRANSISTOR Type Pc [w] IC I IB (A] I (A) VCBO [v] VCEO (V) Vces (V) hFE , Dimensions Unit: mm 19±0.3 Ratings Item Symbol Unit ^""^^Type Conditions~^-^ 2SC 431 2SC 432 2SC 433 , current Ic A 30 Base current Ib A 10 Collector dissipation Pg W 200 Electrical , MAX 2 Thermal resistance Rth "C/W Between ¡unction and case 0.625 High-frequency , "C Vce—5 V 2SC 432 L 434 \ 436 2SC\ 431 433 rv^435 10 15 20 Collector ... OCR Scan
datasheet

4 pages,
178.59 Kb

2sc1468 2SC1470 2SB208A transistor 431 c 2SC435 2SC412 2SC408 2SD208 2sc410 2SC436 transistor SE 431 2SC407 2SB208 2sd206 2SB214 2SC1466 GERMANIUM TRANSISTOR 2SB212 2SB205 2SB206 TEXT
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Abstract: 431 [ 9 ] MULTI CHIP TRANSISTOR A R R A Y DATA SHEETS , SERIES . TRANSISTOR ARRAY SELECTION GUIDE , LINEUP . 1. 2. 3. 4. BIPOLAR TRANSISTOR ARRAYS . DMOS TRANSISTOR ARRAYS . MULTICHIP TRANSISTOR ARRAYS , ] PRODUCT O V E R V IE W AND APPLICATION E X A M P L E S ... OCR Scan
datasheet

2 pages,
30.45 Kb

"Transistor Arrays" TRANSISTOR P 3 TRANSISTOR GUIDE 431 TRANSISTOR equivalent E 32 TRANSISTOR transistor 431 transistor transistor 431 transistor 431 a Transistor Arrays transistor 431 N a 103 m Transistor y 431 transistor n 431 transistor transistor 431 c a 431 transistor transistor w 431 TEXT
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Abstract: wideband transistor FEATURES Product specification b7E J> BFG94 BFG94 PINNING • High , collector DESCRIPTION DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. It is , /DISCRETE NPN 6 GHz wideband transistor Product specification L7E » BFG94 BFG94 LIMITING VALUES In , soldering point CONDITIONS up to T9= 140 °C (note 1) THERMAL RESISTANCE 50K/W Note 1. Ts is the , PHILIPS/DISCRETE NPN 6 GHz wideband transistor Product specification b?E T > BFG94 BFG94 ... OCR Scan
datasheet

13 pages,
449.04 Kb

TEXT
datasheet frame
Abstract: Sink Lubricated Rees _ 0.6 °C/W Thermal Resistance, Junction to Case Rwc Transistor Part — â , , Ybungwood, Pennsylvania 1S697 1S697 (412) 925-7272 SÌX- DSflinCftOFI P Transistor Module 8 Amperes/300 Amperes/300 Volts I COM ECHO XOiMftAU CT iZri tip— —i e«p-1 -t>-w< i-C * s.h-T x 8»k-r ; ; y y y 300 Volt KEE225B0 KEE225B0 Outline Drawing KEE22 KEE22.5B0 Six-Darlington Module Transistor Module 8 Amperes/300 Amperes/300 Volts , ±0.1 Dia. Note: Each Transistor symbol represents a Darlington Transistor with base emitter resistors on ... OCR Scan
datasheet

2 pages,
85.13 Kb

1S697 200 Ampere power transistor 200 Ampere transistor a 431 transistor DIODE 150-29 kee2 KEE225B0 KEE225BD TRANSISTOR 431 transistor 431 c transistor tip 412 TIP 22 transistor tip 300 volts 50 amperes transistor w 431 h a 431 transistor transistor TF 431 300 volt 5 ampere transistor Amperes/300 TEXT
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Archived Files

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darlington transistor) represented by R6 of Fig 5 is approximately 3.5 M W . Consequently the second transistor. HIGH correspond 100 W . LOW corresponds no load. Response with 10 m F, ESR = 4.7 W ; 0.5V : Middle trace: Bottom trace: Drive of load transistor. HIGH correspond 100 W load. LOW corresponds no PR + R6 ) R PR + R5 + R6 (4.3.1) With R PR being the external resistor R5 = 20K W and economical requirements of the customer. Quite soon the power transistor was integrated. It was implemented
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1852-v3.htm
STMicroelectronics 25/05/2000 36.21 Kb HTM 1852-v3.htm
transistor) represented by R6 of Fig 5 is approximately 3.5 M W . Consequently the second integrator with a : Middle trace Bottom trace Drive of load transistor. HIGH correspond 100 W . LOW corresponds no load. transistor was integrated. It was implemented as a NPN transistor (mostly in dar- lington configuration required drop. The next step was the low drop regulator using an darlington output transistor consisting of a PNP driver and a NPN power transistor. This structure reduced the voltage drop required downto
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1852-v2.htm
STMicroelectronics 14/06/1999 34.38 Kb HTM 1852-v2.htm
actu- ally is a darlington transistor) represented by R6 of Fig 5 is approximately 3.5 M W . transistor. HIGH correspond 100 W . LOW corresponds no load. Response with 10 m F, ESR = 4.7 W ; 0.5V : Middle trace: Bottom trace: Drive of load transistor. HIGH correspond 100 W load. LOW corresponds no requirements of the customer. Quite soon the power transistor was integrated. It was implemented as a NPN transistor (mostly in dar- lington configuration) because integrated NPN transistors can handle significantly
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1852.htm
STMicroelectronics 20/10/2000 37.24 Kb HTM 1852.htm
transistor) represented by R6 of Fig 5 is approximately 3.5 M W . Consequently the second integrator with a : Middle trace Bottom trace Drive of load transistor. HIGH correspond 100 W . LOW corresponds no load. transistor was integrated. It was implemented as a NPN transistor (mostly in dar- lington configuration required drop. The next step was the low drop regulator using an darlington output transistor consisting of a PNP driver and a NPN power transistor. This structure reduced the voltage drop required downto
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1852-v1.htm
STMicroelectronics 02/04/1999 34.42 Kb HTM 1852-v1.htm
1.2 PHOTO TRANSISTOR DETECTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.3.1 Control transfer with endpoint 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . associated with each slotted wheel to track the X-axis and Y-axis displacements. 1.2 PHOTO TRANSISTOR photo transistor detectors on the other side. During a mouse displacement, the slotted wheel crosses the infra-red signal so that the photo transistor detectors conduce alternatively one after the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6717.htm
STMicroelectronics 25/05/2000 54.11 Kb HTM 6717.htm
consumption. The HC266 HC266 has a high performance N-channel MOS transistor (OPEN DRAIN output). The HC7266 HC7266 has 4.31 4.13 4.10 6.0 I O =-5.2 mA 5.68 5.8 5.63 5.60 V OL Low Level Output Voltage 2.0 V I = 16 19 t PLZ t PZL Propagation Delay Time (HC266 HC266) 2.0 R L = 1K W 48 90 115 135 ns 4.5 12 current can be obtained by the following equation. I CC (opr) = C PD w V CC w f IN + I CC /4
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1934-v3.htm
STMicroelectronics 25/05/2000 10.06 Kb HTM 1934-v3.htm
CMOS low power consumption. The HC266 HC266 has a high performance N-channel MOS transistor (OPEN DRAIN I O =-4.0 mA 4.18 4.31 4.13 4.10 6.0 I O =-5.2 mA 5.68 5.8 5.63 5.60 V OL Low Level Output Voltage 7 13 16 19 t PLZ t PZL Propagation Delay Time (HC266 HC266) 2.0 R L = 1K W 48 90 115 135 ns 4.5 12 18 23 obtained by the following equation. I CC (opr) = C PD w V CC w f IN + I CC /4 (per Gate) SWITCHING
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1934.htm
STMicroelectronics 20/10/2000 10.62 Kb HTM 1934.htm
MOS transistor (OPEN DRAIN output). The HC7266 HC7266 has an output buffer which is CMOS structure. Input and 4.4 4.4 6.0 5.9 6.0 5.9 5.9 4.5 I O =-4.0 mA 4.18 4.31 4.13 4.10 6.0 I O =-5.2 mA 5.68 5.8 5.63 5.60 V 75 95 110 ns 4.5 8 15 19 22 6.0 7 13 16 19 t PLZ t PZL Propagation Delay Time (HC266 HC266) 2.0 R L = 1K W Average operting current can be obtained by the following equation. I CC (opr) = C PD w V CC w f IN + I CC
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1934-v1.htm
STMicroelectronics 02/04/1999 8.22 Kb HTM 1934-v1.htm
MOS transistor (OPEN DRAIN output). The HC7266 HC7266 has an output buffer which is CMOS structure. Input and 4.4 4.4 6.0 5.9 6.0 5.9 5.9 4.5 I O =-4.0 mA 4.18 4.31 4.13 4.10 6.0 I O =-5.2 mA 5.68 5.8 5.63 5.60 V 75 95 110 ns 4.5 8 15 19 22 6.0 7 13 16 19 t PLZ t PZL Propagation Delay Time (HC266 HC266) 2.0 R L = 1K W Average operting current can be obtained by the following equation. I CC (opr) = C PD w V CC w f IN + I CC
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1934-v2.htm
STMicroelectronics 14/06/1999 8.18 Kb HTM 1934-v2.htm
DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.2 PHOTO TRANSISTOR DETECTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3.1 Control transfer with displacements. 1.2 PHOTO TRANSISTOR DETECTORS The encoder consists of an infra-red LED on one side of the slotted wheel and two superim- posed photo transistor detectors on the other side. During a mouse displacement, the slotted wheel crosses the infra-red signal so that the photo transistor detectors conduce
/datasheets/files/stmicroelectronics/books/ascii/docs/6717.htm
STMicroelectronics 25/05/2000 55.56 Kb HTM 6717.htm