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TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor w 431

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transistor w 431

Abstract: TIC 122 Transistor T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor Applications â'¢ â'¢ â'¢ â'¢ â'¢ â , ® T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor Specifications Absolute Maximum Ratings , a l Ne two rk® T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor Specifications (cont , rld to the Glo b a l Ne two rk® T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor Load , Wo rld to the Glo b a l Ne two rk® T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor
TriQuint Semiconductor
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transistor w 431 TIC 122 Transistor transistor 431 smd transistor SE 431 transistor je 123 transistor+431+smd EAR99

transistor SMD p90

Abstract: transistor 431 smd T1G6001528-Q3 DC ­ 6 GHz 18 W GaN RF Power Transistor Applications · · · · · · · , Digital World to the Global Network® T1G6001528-Q3 DC ­ 6 GHz 18 W GaN RF Power Transistor , DC ­ 6 GHz 18 W GaN RF Power Transistor Load Pull Data RF performance that the device typically , Digital World to the Global Network® T1G6001528-Q3 DC ­ 6 GHz 18 W GaN RF Power Transistor Typical , 18 W GaN RF Power Transistor Typical Performance (cont.) Performance is measured at DUT reference
TriQuint Semiconductor
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transistor SMD p90 smd transistor 901 100A150JW500XC RO3203 431 TRANSISTOR smd S2834

c2689

Abstract: Z027 factor = 2.0 W/°C up to and including T.- = +200°C. 2/ Pulsed (see 4.3.1 herein) = 90A. 3/ _ , above J/ 2/ See 4.3.3 herein. See 4.3.1 herein. 3/ With the transistor mounted in normal mounting , MILITARY SPECIFICATION Semiconductor Device, Transistor, NPN, Silicon Power Types 2N5926 and TX2N5926 , February 1975 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON POWER TYPE 2N5926 and , ) covered herein, the term 'inspection lot' shall be as defined in paragraph 4.3.1 of specification MIL-S
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c2689 Z027 diode cc 3053 diode Z027 0G001 D0D012 MIL-S-19500/447 MIL-S-19500/477 MIL-S-19500 5961-A340

h a 431 transistor

Abstract: transistor 431t SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode , reversal protection 431DD SPDT relay with internal transistor driver and coil transient suppression , Weight 0.109 oz. (3.09g) max. 431 Page 1 The TO-5 relay, originally conceived and developed by , . Designed for high-density PC board mounting, its small size and low coil power dissipation make the 431
Teledyne Relays
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h a 431 transistor transistor 431t 431T1 431T a/TRANSISTOR+431t ER411M3-12A 722XM3-26 ER411T ER412 ER412T ER420

transistor 431t

Abstract: h a 431 transistor SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode , reversal protection 431DD SPDT relay with internal transistor driver and coil transient suppression , , its small size and low coil power dissipation make the 431 relay one of the most versatile , relay features an internal silicon suppression diode and transistor driver. This hybrid package
Teledyne Relays
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J412 lm 431 DAtasheet a 431 transistor TRANSISTOR 431 y 431 transistor 431t-5 ER421 ER422 ER431T ER432 ER432T 712TN

transistor w 431

Abstract: TRANSISTOR BC 431 » BC 431 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and power stages Besondere Merkmale: â , £ 25°C,«thJA< 200°C/W Sperrschichttemperatur Junction temperature Lagerungstemperaturbereich Storage , V mA A mA mW mW °C °C 109 BC 431 0 40 80 120 °C 'amtr'case Wärmewiderstände Thermal , °C/W *thJA 200 °C/W *thJC 90 °C/W KenngröÃen Characteristics 'amb = 25 falls nicht anders
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TRANSISTOR BC 431 transistor 431 c 431 transistor transistor bc 488 bc 106 transistor w 431 transistor CEO60

2SB206

Abstract: 2SB205 Collector voltage Vce(V) POWER TRANSISTOR Type Pc [w] IC I IB (A] I (A) VCBO [v] VCEO (V) Vces (V) hFE , Dimensions Unit: mm 19±0.3 Ratings Item Symbol Unit ^""^^Type Conditions~^-^ 2SC 431 2SC 432 2SC 433 , current Ic A 30 Base current Ib A 10 Collector dissipation Pg W 200 Electrical , MAX 2 Thermal resistance Rth "C/W Between ¡unction and case 0.625 High-frequency , "C Vceâ'"5 V 2SC 432 L 434 \ 436 2SC\ 431 433 rv^435 10 15 20 Collector
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2SB206 2SB208 2SB208A 2SB212 2SB214 2SC407 2SB205 2sd206 GERMANIUM TRANSISTOR 1BMAX11 MAX50 MAX30 2SB207

transistor w 431

Abstract: a 431 transistor 431 [ 9 ] MULTI CHIP TRANSISTOR A R R A Y DATA SHEETS , SERIES . TRANSISTOR ARRAY SELECTION GUIDE , LINEUP . 1. 2. 3. 4. BIPOLAR TRANSISTOR ARRAYS . DMOS TRANSISTOR ARRAYS . MULTICHIP TRANSISTOR ARRAYS , ] PRODUCT O V E R V IE W AND APPLICATION E X A M P L E S
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n 431 transistor a 103 m Transistor transistor 431 N Transistor Arrays transistor 431 a E 32 TRANSISTOR TD/TB62

Ghz dB transistor

Abstract: wideband transistor FEATURES Product specification b7E J> BFG94 PINNING â'¢ High , collector DESCRIPTION DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. It is , /DISCRETE NPN 6 GHz wideband transistor Product specification L7E » BFG94 LIMITING VALUES In , soldering point CONDITIONS up to T9= 140 °C (note 1) THERMAL RESISTANCE 50K/W Note 1. Ts is the , PHILIPS/DISCRETE NPN 6 GHz wideband transistor Product specification b?E T > BFG94
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Ghz dB transistor S3T31

300 volt 5 ampere transistor

Abstract: h a 431 transistor Sink Lubricated Rees _ 0.6 °C/W Thermal Resistance, Junction to Case Rwc Transistor Part â'" â , , Ybungwood, Pennsylvania 1S697 (412) 925-7272 SÌX- DSflinCftOFI P Transistor Module 8 Amperes/300 Volts I COM ECHO XOiMftAU CT iZri tipâ'" â'"i e«p-1 -t>-w< i-C * s.h-T x 8»k-r ; ; y y y 300 Volt KEE225B0 Outline Drawing KEE22.5B0 Six-Darlington Module Transistor Module 8 Amperes/300 Volts , ±0.1 Dia. Note: Each Transistor symbol represents a Darlington Transistor with base emitter resistors on
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KEE225BD 300 volt 5 ampere transistor transistor TF 431 tip 300 volts 50 amperes TIP 22 transistor transistor tip 412 kee2

ZTX108B

Abstract: ZR431Q1 an enhanced version of the industry standard 431. It is a three terminal shunt regulator giving , lower than industry standard 431 parts. (Please refer to Appendix A) Following are a few example , ' versions of the '431 generally require values of 3.3µF or greater). Switch-Mode Power Supply , loads greater than a few milliamps losses can be significant. H o w e v e r , a s e r i e s r e g u l , using a ZR431 to perform all but the pass transistor functi on. F igure 3 shows a series regulator
Zetex Semiconductors
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ZTX108B ZR431Q1 431 regulator 431 sot23 ic 431 capacitor c1 220uF

sot23-5 transistor T1

Abstract: 431 SOT23-5 LMV 431 A SOT23-3 TO92: Plastic Package Top View SOT23-5 20030819 , ds100958 11800 24060 33200 24180 19880809 LMV 431 LMV431/LMV431A/LMV431B (1.24V , 0.05mA 3mA LMV431C TA 25 www.national.com/JPN/ 161 /W ( - 1/ JA) TO92 /SOT23 -5SOT23-3 (Note 2) TO92 SOT23-5SOT23-3 455 /W TO-92 0 70 , /LMV431A/LMV431B inches (millimeters) SOT23-5 Molded Small Outline Transistor Package (M5) NS
National Semiconductor
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LMV431B MA05A MF05A sot23-5 transistor T1 431 SOT23-5 Package M5 SOT23 transistor 028W LM431 LMV431AI 39PPM/ LMV431

h a 431 transistor

Abstract: transistor w 431 DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching , Thermal Resistance JA Thermal Resistance UNITS V V V A A A A A A W W 400 700 9.0 4.0 8.0 2.0 4.0 6.0 12 2.0 75 -65 to +150 °C °C/W 1.67 JC 62.5 °C/W ELECTRICAL , MJE13005 NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (CONTINUED) TEST CONDITIONS SYMBOL MIN
Central Semiconductor
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NPN Transistor TO220 VCEO 50v i 10A TRANSISTOR a 1270

sot23-5 transistor T1

Abstract: r2rz LMV 431 A SOT23-3 TO92: Plastic Package Top View SOT23-5 20030819 , ds100958 11800 24060 33200 24180 19880809 LMV 431 LMV431/LMV431A/LMV431B (1.24V , 0.05mA 3mA LMV431C TA 25 www.national.com/JPN/ 161 /W ( - 1/ JA) TO92 /SOT23 -5SOT23-3 (Note 2) TO92 SOT23-5SOT23-3 455 /W TO-92 0 70 , /LMV431A/LMV431B inches (millimeters) SOT23-5 Molded Small Outline Transistor Package (M5) NS
National Semiconductor
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r2rz T1 SOT23-3 JR SOT23-3 low noise transistor sot23 DS100958-13-JP R2 sot23-3 MF03A CSP-9-111C2 CSP-9-111S2
Abstract: N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES â'¢ BSN204 , 3 Vos DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope , specification N-channel enhancement mode vertical D-MOS transistor BSN204/BSN204A LIMITING VALUES In , total power dissipation up t o T , ^ 25 °C - 1 W storage temperature range J j , P«i (â  * PARAMETER from junction to ambient (note 1) VALUE 125 UNIT K/W Note 1 -
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BSN204A

sot-23 MARKING CODE 431

Abstract: h a 431 transistor CMPTA27 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR Central" Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA27 type is a Silicon NPN Darlington Transistor manufactured by the , Storage Junction Temperature Thermal Resistance Tj.Tstg 0 JA -65 to +150 357 °C °c /w v CBO VCES v EBO *C , Corp. CMPTA27 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE , 0.50 SOT-23 (REV: R3) R5 (20-February 2003) 431
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sot-23 MARKING CODE 431 sot 23 marking code 431 839 transistor transistor c 839 431 marking code sot transistor marking code 431 100MH CP307

Transistor PJ 431

Abstract: T0-204MA 2 5 125 7 10 PTC 431 400 325 400 Unit Volts Volts Volts A A A A W A A Conditions TC = 25 , · Solenoid Drivers SPECIFICATIONS General The PTC 430 and PTC 431 Powermode series transistors , 00003E3 3 | SERIES PTC 430, PTC 431 High Voltage Fast Switching NPN Transistors Absolute maximum , Unit °C/W Conditions °c °c tJ.tSTG D IN ACCORDANCE WITH JEDEC REGISTRATION DATA. H PULSE TEST: PW = 300 /*s, DUTY CYCLE 2% m A LLEN -BR A D LEY MANUFACTURED BY POWER TRANSISTOR COMPONENTS
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T0-204MA Transistor PJ 431 PTC430 PLA relay 2 c/o -MCC-12D-5A-WB PLA relay 1 c/o -MCC-12D-5A-WB

TFK u 116

Abstract: TFK 236 Transistor Anwendungen: Treiber und Endstufen Applications: Driver and power stages Besondere Merkmale: â , '¢ Komplementär zu BC 431 Features: â'¢ High reverse voltage â'¢ Power dissipation 625 mW â'¢ In groups selected â'¢ Matched pairs available â'¢ Complementary to BC 431 Abmessungen in mm Dimensions in mm , '" 25^thJA ~ 200°c/w Sperrschichttemperatur Junction temperature Lagerungstemperaturbereich Storage , V V V mA A mA mW mW °C B 2/V.2.489/0875 A 1 115 BC 432 t 'tot 1,0 W 0,8 0,6 0,4 0,2
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TFK u 116 TFK 236 6tfk BC431 transistor BC 236 CES10116

BZX85C12V

Abstract: bta41-600b application 435 435 435 435 435 435 435 435 434 435 435 435 435 431 432 432 432 437 437 435 431 433 433 435 435 435 431 431 436 431 432 435 435 433 435 431 432 430 430 435 436 436 430 426 426 427 427 426 426 426 , 81-0050 47-2538 81-0052 81-0138 81-0140 47-3402 47-3444 81-0404 Page Number 431 434 436 427 433 427 437 432 432 432 434 434 427 432 432 436 436 437 437 427 427 432 432 433 432 433 434 431 427 430 427 429 430 429 430 431 431 436 430 431 431 431 436 431 431 436 434 430 434 433 433 433 434 430 434 434
Rapid Electronics Catalog
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2SA1085E 2SC2547E BZX85C12V bta41-600b application TOSHIBA 2N3055 BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V DO-15 DO-201AD T0202-3 1N914 1N4001 1N4002

transistor w 431

Abstract: tL 431 transistor BSN204/BSN204A N-channel enhancement mode vertical D-MOS transistor FEATURES â'¢ Direct interface to , enhancement mode verticaf D-MOS transistor in a TO-92 envelope, intended for use as a line current interrupter , D-MOS transistor BSN204/BSN204A LIMITING VALUES In accordance with the Absolute Maximum System (I EC , PM total power dissipation uptoTort = 25°C - 1 W "U storage temperature range -65 150 °C Ti , (note 1 ) 125 K/W Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm
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tL 431 transistor transistor tl 431
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