NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Philips Semiconductors UHF power transistor 711002b DDbTBAS 212 â- RHIN Product specification BLT81 BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-lead SOT223 surface mounting package. It is primarily designed for use , From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors. Philips Semiconductors â- 711Qfl2b OOb^BflB 1ST â- PHIN Product specification UHF power transistor BLT81 BLT81 LIMITING VALUES In ... | OCR Scan |
8 pages, |
transistor ft 960 BLT81 smd transistor at t21 transistor 12p smd transistor smd 12p BLT81 abstract |
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| Abstract: ISL8500EVAL1ZREVAPCB ISL8500EVAL1ZREVAPCB C1 CAP, SMD, 0402, 2200pF, 50V, 10%, X7R, ROHS PANASONIC ECJ-0EB1H222K ECJ-0EB1H222K C10 CAP, SMD, 1206, 10uF, 25V, 10%, X5R, ROHS VENKEL C1206X5R250-106KNE C1206X5R250-106KNE TDK C3225X5R0J107M C3225X5R0J107M , CAP, SMD, 1210, 100uF, 6.3V, 20%, X5R, ROHS H1044-00100-50V5-T H1044-00100-50V5-T 1 ea C2 CAP, SMD ,0402 , CAP, SMD, 0402, 470pF, 50V, 10%, X7R, ROHS PANASONIC ECJ-0EB1H471K ECJ-0EB1H471K VENKEL C0402X74500-471KNE C0402X74500-471KNE H1044-00104-16V10-T H1044-00104-16V10-T 1 ea C4 CAP, SMD, 0402, 0.1uF, 16V, MURATA 10%, X7R, ROHS ... | Original |
6 pages, |
smd ss 5 transistor Yageo smd resistor 10k "ON Semiconductor" 2N7002 CAP 220UF 40V CR0402-16W transistor 12p smd C0402COG500-100JNE panasonic vertical preset 10k schematic liteon adapter notebook CR0402-16W-1002FT smd transistor 43k CR060310W1002FT ISL8500EVAL1Z AN1372 ISL8500EVAL1Z abstract |
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| Abstract: , 12P, DFN, 4x3, ROHS INTERSIL ISL85001IRZ ISL85001IRZ 2N7002-7-F-T 2N7002-7-F-T 1 ea Q4 TRANSISTOR , C9 CAPACITOR, SMD, 0603, 0.10uF, 50V, 10%, X7R TDK C1608X7R1H104K C1608X7R1H104K H1044-00104-16V10-T H1044-00104-16V10-T 1 ea C4 CAP, SMD, 0402, 0.1uF, 16V, 10%, X7R, ROHS MURATA GRM36X7R104K016AD GRM36X7R104K016AD H1044-00222-50V10-T H1044-00222-50V10-T 1 ea C1 CAP, SMD, 0402, 2200pF, 50V, 10%, X7R, ROHS PANASONIC ECJ-0EB1H222K ECJ-0EB1H222K H1044-00470-50V5-T H1044-00470-50V5-T 1 ea C2 CAP, SMD, 0402, 47pF, 50V, 5%, NPO, ROHS MURATA GRM36COG470J050AQ GRM36COG470J050AQ ... | Original |
6 pages, |
3161 220UF 2200PF 12p smd H1065-00106-25V10-T isl85001 ISL85001EVAL1Z TRANSISTOR SMD 1a 9 transistor smd 12p R Y SMD TRANSISTOR variable resistor 10w schematic liteon adapter notebook C1206X5R250 Yageo smd resistor 10k ISL85001EVAL1Z abstract |
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| Abstract: ISL8022EVAL1ZREVAPCB ISL8022EVAL1ZREVAPCB 1 ea C2012X5R0J226M-T C2012X5R0J226M-T 2 ea C2, C4 TDK CAP, SMD, 0805, 22uF, 6.3V, 20%, X5R, ROHS H1045-00100-50V5-T H1045-00100-50V5-T 2 ea C3, C5 CAP, SMD, 0603, 10pF, 50V, 5%, COG, ROHS , 0 ea C9 CAP, SMD, 0603, DNP-PLACE HOLDER, ROHS H1046-00106-6R3V10-T H1046-00106-6R3V10-T 2 ea C1, C10 VENKEL CAP, SMD, 0805, 10uF, 6.3V, 10%, X5R, KEMET ROHS C0805X5R6R3-106KNE C0805X5R6R3-106KNE , 0 ea C6-C8, C11 CAP, SMD, 0805, DNP-PLACE HOLDER, ROHS VLCF-4028T-1R2N2R7-2 VLCF-4028T-1R2N2R7-2 2 ea ... | Original |
6 pages, |
ECJ2FB0J106K AN-1554 6R3R15X106KV4E RC0603JR-070RL 22UF RK73Z1JTTD-T SMD 6 PIN IC FOR PWM smd transistor s3 TDK cap 12p smd transistor smd 12p Venkel CR0603 10W ISL8022 YAGEO RC0603JR-070RL ISL8022EVAL1Z ISL8022EVAL1Z abstract |
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| Abstract: capacitor, SMD 0402, NP0, 50V, +/0.25pF 1.2p 2 C201, C204 Ceramic capacitor, SMD 0402, NP0, 50V, +/-5% 12p 3 C413, C414, C415 Ceramic capacitor, SMD 0402, NP0, 50V, +/-10% 100p 1 C404 Ceramic capacitor, SMD 0402, X7R, 25V, +/-10% 4.7n 14 C208, C301, C405, C407 , , +/-5% 12p 2 C22, C23 Ceramic capacitor, SMD 0402, NP0, 50V, +/-5% 18p 2 C5, C6 , power. A switching transistor is connected to PB6 on the ATmega3290P so that sufficient current can be ... | Original |
27 pages, |
20CS08KQ-150ND AVR2016 AT90USB1297 J401 smd diode c418 xtal016207 smd diode B4 images D408 XTAL 8MHZ SMD D408 transistor ATMEGA1284PV-10MU ATMEGA1284P Atmel AVR RAVEN BT501 AVR2016 abstract |
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| Abstract: Manufacturer Part # 5 Ceramic capacitor, SMD 0402, NP0, 50V, +/0.25pF 1.2p 2 C201, C204 Ceramic capacitor, SMD 0402, NP0, 50V, +/-5% 12p 3 C413, C414, C415 Ceramic capacitor, SMD 0402, NP0, 50V, +/-10% 100p 1 C404 Ceramic capacitor, SMD 0402, X7R, 25V, +/-10% 4.7n , Ceramic capacitor, SMD 0402, NP0, 50V, +/-5% 12p 2 C22, C23 Ceramic capacitor, SMD 0402, NP0 , power. A switching transistor is connected to PB6 on the ATmega3290P so that sufficient current can be ... | Original |
26 pages, |
AT90USB1287 xc202 AT45DB161D-SU SMD TRANSISTOR PD4 dipole folded pcb antenna 3H DIODE smd 8117C-AVR-03 smd transistor 2f DIODE SMD r426 EL17-21USRC D408 transistor Atmel AVR RAVEN Board AT45D161D AVR2016 AT86RF230 AVR2016 abstract |
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| Abstract: , SMD, TFP, 150V, 57A,ROHS FUJI ELECTRIC MJD31CG MJD31CG 1 ea Q3 TRANSISTOR, NPN, 3P , power supply. It can be used in various single transistor topologies including forward and flyback , drain source of the transistor. As the main switch is turned off, a resonance is developed between the , of the transistor is clamped to VIN. VIN*NS/NP V DS V RES VOUT = VIN*D*NS/NP TX +VOUT + , source of the transistor Coss, the winding capacitance of the transformer Ct, and the external ... | Original |
10 pages, |
12p smd coev transformer MGPWT-00140-REVA smd 57a smd transistor equivalent table resonant single ended forward converter transistor 12p smd transistor SMD 12W ic 7490 data sheet ISL6721EVAL3Z Datasheet of 7490 IC IC 7490 pin configuration SMD transistor 2x sot 23 ISL6721EVAL3Z abstract |
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| Abstract: KMG 5*11 1 C7 020 SMD Diode 1N4148 1N4148 LL-34 LL-34 1 D2 021 Transistor MMBT2222AK MMBT2222AK , film fixed resistor 3WS 01 +/-5% Mini size 1 R31 012 SMD resistor 0805 10 +/-5% 4 R17,R18,R39,R59 013 SMD resistor 0805 20 +/-5% 1 R60 014 SMD resistor 0805 47 +/-5% 2 R54,R55 015 SMD resistor 0805 100 +/-5% 1 R84 016 SMD resistor 0805 120 +/-5% REEL 1 R52 017 SMD resistor 0805 180 +/-5% REEL 1 R51 018 ... | Original |
62 pages, |
R76 PI PM30006-02 core EEL19 transformer ERL-35 103, size 1204 SMD resistor transistor pn2222 eel19 230V AC to 5V DC ic smd transistor w17 SG6931 w12 smd transistor W17 SMD transistor 1N4148 SMD LL-34 PM30006-02 abstract |
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| Abstract: KMG 5*11 1 C7 020 SMD Diode 1N4148 1N4148 LL-34 LL-34 1 D2 021 Transistor MMBT2222AK MMBT2222AK , film fixed resistor 3WS 01 +/-5% Mini size 1 R31 012 SMD resistor 0805 10 +/-5% 4 R17,R18,R39,R59 013 SMD resistor 0805 20 +/-5% 1 R60 014 SMD resistor 0805 47 +/-5% 2 R54,R55 015 SMD resistor 0805 100 +/-5% 1 R84 016 SMD resistor 0805 120 +/-5% REEL 1 R52 017 SMD resistor 0805 180 +/-5% REEL 1 R51 018 ... | Original |
62 pages, |
SG6931 z5v mov R65 choke NTC3 transistor BD140 MOSFET IRF840 Zener DIODE SMD 10A 1N4148 SOD-80 SG6516 capacitor 1000uF/16V smps 230V eel19 1N4148 SMD LL-34 core EEL19 transformer PM30006-01 80PLUS PM30006-01 abstract |
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| Abstract: the switching frequency. The following formula for inductor value was used: L+ 12p * 0.1 * fSW C 2 + 12p * 0.1 * 100000 2 100 nF + 2.5 mH Output Rectifier The output rectifier must , sense resistor to the base-emitter junction of a general purpose PNP transistor Q1. Current through , the LED of an optical coupler and is limited by R4. The transistor of the optical coupler U2 provides , transistor. C6 was empirically determined in the range of 22 mF to 47 mF. Nb + Ns * This LED driver is ... | Original |
15 pages, |
BC857 t1A transistor smd BZX84C18LT1G EF16 TRANSFORMER Cree MC-E cree mc-e driver MMBZ5231BLT1G TDK 3C90 smd zener diode mark J2 xp-e NEC 820 bridge rectifier smd transistor t1A smd transistor T1C TND371/D TND371/D abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| -SOT-363 -SOT-363 -SOT-363 -SOT-363 (SMD) 30 Ohm 435 K/W 150 Grad C 70 V 1000 mV No BAT 165 - - 12 pF 750 mA 50 uA P-SOD-323 P-SOD-323 P-SOD-323 P-SOD-323 (SMD Wired Communica Wireless Commun AF Diodes AF Transistors RF Diodes RF Transistors Schottky Diodes Parameter List SMD Diodes for clamping A - P-SOD-323 P-SOD-323 P-SOD-323 P-SOD-323 (SMD) 10 Ohm 150 K/W 150 Grad C 40 V 1000 mV No BAS 170W - - 2 pF 70 mA 10 uA P-SOD-323 P-SOD-323 P-SOD-323 P-SOD-323 (SMD) 34 Ohm 210 K/W 150 Grad C 70 V 1000 mV No BAS 40 - - 5 pF 120 mA 10 uA P-SOT-23 P-SOT-23 P-SOT-23 P-SOT-23 (SMD) 10 www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~552.htm |
Infineon | 19/10/2000 | 53.17 Kb | HTM | para~552.htm |
| -SOT-363 -SOT-363 -SOT-363 -SOT-363 (SMD) 30 Ohm 435 K/W 150 Grad C 70 V 1000 mV No BAT 165 - - 12 pF 750 mA 50 uA P-SOD-323 P-SOD-323 P-SOD-323 P-SOD-323 (SMD Wired Communica Wireless Commun AF Diodes AF Transistors RF Diodes RF Transistors Schottky Diodes Parameter List SMD Diodes for clamping A - P-SOD-323 P-SOD-323 P-SOD-323 P-SOD-323 (SMD) 10 Ohm 150 K/W 150 Grad C 40 V 1000 mV No BAS 170W - - 2 pF 70 mA 10 uA P-SOD-323 P-SOD-323 P-SOD-323 P-SOD-323 (SMD) 34 Ohm 210 K/W 150 Grad C 70 V 1000 mV No BAS 40 - - 5 pF 120 mA 10 uA P-SOT-23 P-SOT-23 P-SOT-23 P-SOT-23 (SMD) 10 www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~171.htm |
Infineon | 19/10/2000 | 53.17 Kb | HTM | para~171.htm |
| .0 -55.0 150.0 PROD SIG LF 8n 12n 15n 20n 13n 20n 27n 36n 5n 8n 12n 16n 60p 80p 1M 25.0 0.0 8p 12p 1M 25 n 4n 6n 15n 20n 110p 150p 1M 25.0 -3 8p 12p 1M 25.0 -3 20.0 PIN SIL 6.5m 7.0m 1.8m 2.3m 3,5m 1,7m .7 1m 3.0 12p 20p 1M 25.0 0.0 2.5 3.5 T_j 0.03 0.0 25.0 3.5 200.0 0.0 FET 0.48 0.4 0.75 0.48 3.36 70 N 0.32 1u 240.0 10n 100n T_j 20.0 25.0 240.0 0.6 0.8 1.2 1m 240.0 8p 12p 1M 25.0 0.0 4.0 8.0 T_j 0 .8 1.5 2.0 1m 240.0 8p 12p 1M 25.0 0.0 3.5 6.0 T_j 0.36 10.0 25.0 6.0 240.0 10.0 FET 0.36 0.14 0,36 0 www.datasheetarchive.com/download/19281888-169556ZC/transsip.zip (transsip.xls) |
Infineon | 07/09/2000 | 92.95 Kb | ZIP | transsip.zip |
| fettrans SIG2 RF MOSFET Transistors (Tetrodes) RF MOSFET Transistors (Tetrodes) H549 H747 H546 1005 3000/10000 REEL SMD 25.0 200m T_s 76.0 150.0 INS N 25m 1,5m 5.0 50n T_amb 8.0 25.0 8.0 1.0 T NETWORK 13.0 50n 19.0 Q63702-F1498 Q63702-F1498 Q63702-F1498 Q63702-F1498 # bf1005 05.05.1999ds 36767.0 BF1005S BF1005S BF1005S BF1005S 3000/10000 REEL SMD 25.0 200m T_s 76.0 150.0 SMD N 25m 800u 5.0 50n T_amb 8.0 25.0 8.0 1.0 T_amb 100u 5.0 FET RF 30m 5.0 1.6 5.0 4 .05.1999ds 36767.0 BF1009 BF1009 BF1009 BF1009 3000/10000 REEL SMD 25.0 200m T_s 76.0 150.0 INS N 25m 500u 9.0 50n T_amb 8.0 25 www.datasheetarchive.com/download/36135405-169521ZC/fettrans.zip (fettrans.xls) |
Infineon | 07/09/2000 | 38.22 Kb | ZIP | fettrans.zip |
| Silicon Power Rectifier byt115 BYT115/200/400 BYT115/200/400 BYT115/200/400 BYT115/200/400 Ultra Fast Recovery Silicon Power Rectifier byt12p1 BYT12P/1000A Fast Recovery Silicon Power Rectifier byt12p6 BYT12P/600A/800A Fast Recovery Silicon Power Mode bf550 BF550/BF550R BF550/BF550R BF550/BF550R BF550/BF550R Silicon PNP RF Transistor bf569 BF569/BF569R BF569/BF569R BF569/BF569R BF569/BF569R Silicon PNP RF Transistor bf579 BF579/BF579R BF579/BF579R BF579/BF579R BF579/BF579R Silicon PNP RF Transistor cd_fax BF775 BF775 BF775 BF775 Silicon PNP RF Transistor bf961 BF961 BF961 BF961 BF961 N BF970 BF970 BF970 BF970 Silicon PNP RF Transistor bf979 BF979 BF979 BF979 BF979 Silicon PNP RF Transistor bf988 BF988 BF988 BF988 BF988 N-Channel Dual www.datasheetarchive.com/files/temic/database/text/allparts.txt |
Temic | 12/03/1997 | 67.32 Kb | TXT | allparts.txt |
| sieget AF+RF Bipolar Switching Transistors H549 H747 H546 H547 H548 C131 E006 E012 E017 E106 E _off-min t_off-typ t_off-max t_on-min t_on-typ t_on-max std-pac pack. taping transistor source s s s s s s s s m m m m m m m m m m m m m m m m m m m m m m m m m m V V Ohm pF dB mV dBm BFP 405 SMD ,1p 1M 2.0 RF 12m NPN 0,006g -65.0 150.0 PROD RF 3000/10000 REEL SOT-343 NPN SILICON RF TRANSISTOR ,525m 4.0 0,29p 23.0 15.0 Q62702-F-1592 Q62702-F-1592 Q62702-F-1592 Q62702-F-1592 bfp405 13.12.1999ds 36770.0 BFP 420 SMD 25.0 160m T_s 107.0 150 www.datasheetarchive.com/download/39431256-169545ZC/sieget.zip (sieget.xls) |
Infineon | 07/09/2000 | 67.4 Kb | ZIP | sieget.zip |
| power transistors. At that time this was the most economic solution to satisfy both technical and economical requirements of the customer. Quite soon the power transistor was integrated. It was implemented as a NPN transistor (mostly in dar- lington configuration) because integrated NPN transistors can handle significantly higher current densities than lateral PNP transistors. The draw- back of this regulator using an darlington output transistor consisting of a PNP driver and a NPN power transistor. This www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1852-v2.htm |
STMicroelectronics | 14/06/1999 | 34.38 Kb | HTM | 1852-v2.htm |
| power transistors. At that time this was the most economic solution to satisfy both technical and economical requirements of the customer. Quite soon the power transistor was integrated. It was implemented as a NPN transistor (mostly in dar- lington configuration) because integrated NPN transistors can handle significantly higher current densities than lateral PNP transistors. The draw- back of this regulator using an darlington output transistor consisting of a PNP driver and a NPN power transistor. This www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1852-v1.htm |
STMicroelectronics | 02/04/1999 | 34.42 Kb | HTM | 1852-v1.htm |
| available regulators still had external power transistors. At that time this was the most economic transistor was integrated. It was implemented as a NPN transistor (mostly in dar- lington configuration) because integrated NPN transistors can handle significantly higher current densities than lateral PNP transistors. The draw- back of this configuration was the required volt- age drop between input and output minimum required drop. The next step was the low drop regulator using an darlington output transistor www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1852-v3.htm |
STMicroelectronics | 25/05/2000 | 36.21 Kb | HTM | 1852-v3.htm |
| OF HISTORY The first available regulators still had external power transistors. At that time this . Quite soon the power transistor was integrated. It was implemented as a NPN transistor (mostly in dar- lington configuration) because integrated NPN transistors can handle significantly higher current densities than lateral PNP transistors. The draw- back of this configuration was the required volt- age darlington output transistor consisting of a PNP driver and a NPN power transistor. This structure reduced www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1852.htm |
STMicroelectronics | 20/10/2000 | 37.24 Kb | HTM | 1852.htm |