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Part Manufacturer Description Datasheet BUY
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor marking 6A

Catalog Datasheet MFG & Type PDF Document Tags

transistor t2a 82

Abstract: transistor 81 110 w 85 for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51 , transistor, view on gummed tape S) Additional marking "0": Taping without paper film Additional marking "Z": Zigzag folded tape inspecial box. Marking for orientation of transistor not necessary, because , Base-emitter saturation voltage /c=6A,/B = t.2A /C = 5A,/B-1.0A DC forward current transfer ratio 'ce' >3V , VÃ"-160V. -I, -I, 'C«6A,/B). /c«5A,/B1 = Turn on time Storage time Fall time Inductive load
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Abstract: Tube Tape Reel 1 of 4 QW-R203-008.G TIP41C  NPN PLANAR TRANSISTOR MARKING INFORMATION PACKAGE MARKING TO-220/TO-220F TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-008.G TIP41C  NPN PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC , UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using Unisonic Technologies
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TIP42C TIP41CL- TIP41CG-

transistor A6A

Abstract: transistor A6A 5 Transistors UMA6N / FMA6A UMG6N / UMH14NI FMG6A / IMH14A / IMH15A I Digital Transistor , I li II IU91 liv t LW « V V * 2 200mW per eiement must not be e ·Package, marking, and packaging specifications Type Package Marking Code B asic ordering unit (pieces) U M A6A U M T5 A6 TR 3000 , Digital Transistor (Dual Digital Transistors for Inverter Driver) · A b so lu te maximum ratings (Ta=25°C} Parameter Collector-base voltage Coilector-emitter voltage FM G6 U M G 6N / UMH14N / FM G 6A / IMH14A
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transistor A6A transistor A6A 5 transistor a6n A6A MARKING 6a digital transistor marking code A6a JMH15A 96-492-C

2sc3320

Abstract: 2sc3320 transistor UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH , : Emitter  Pin Assignment 1 2 3 B C E B C E Packing Tube Tube MARKING INFORMATION PACKAGE MARKING TO-3P TO-3PN www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R214-008.E 2SC3320  NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM , =1mA MIN 500 400 400 7 IC=6A, IB=1.2A VCBO=500V VEBO=7V IC=6A, VCE=5V 10 IC=7.5A, IB1 =1.5A
Unisonic Technologies
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2sc3320 transistor 2SC3320L-
Abstract: UNISONIC TECHNOLOGIES CO., LTD TIP42C-Q PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC TIP42C-Q is a PNP epitaxial planar transistor, designed for using , TIP42CG-Q-x-TA3-T  Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube MARKING INFORMATION PACKAGE MARKING TO-220 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R203-049.a TIP42C-Q  PNP PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATING Unisonic Technologies
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TIP42CL-Q- TIP42CG-Q-
Abstract: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.55V @ IC / IB = 6A / 300mA (Max.) Excellent gain , / IB = 6 / 300mA Epitaxial Planar Type NPN Silicon Transistor Package Packing TO-92 TO , 6A, IB = 30mA IC = 6A, IB = 30mA VCE = 1V, IC = 6A VCE(SAT) 4 VBE(SAT) VBE(ON) - 0.40 Taiwan Semiconductor
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TSC5988CT
Abstract: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR  1 FEATURES SOT-223 * Low saturation voltage with equivalent , MARKING SOT-89 UP1868G SOT-223 Date Code 1 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-015.D UP1868  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM , =-5mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-50mA (Note) IC=-6A, IB=-250mA Base-Emitter Saturation Unisonic Technologies
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UP1868G-AA3-R UP1868G-AB3-R

K 2645 transistor

Abstract: K 2642 transistor Orientation of transistor on tape11 Additional marking for specials51 â'¢I 06 Â«â  View on flat side of , . Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example ,   fiSSOQ^b 0QEH503 S BU 903 IAL66 Silicon NPN Power Transistor Application: Switching mode power supply , voltage /c~100mA.tc=125mH Emitter-base breakdown voltage /E»1 mA Collector saturation voltage /c*=6A,/b*2A, Base saturation voltage /c-6A,/b»2A DC forward current transfer ratio Vce = 2V,/C-3.2A Vce-BV
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T0126 K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 T-33-13 DIN41 15A3DIN

transistor a110

Abstract: zener diode a24 Marking Plate 20.4 5.1 19.0 Reliability 3.7 Dimensions (mm) · The simple design without using lead wires ensures high reliability. LED Indicator Versatility · Snap-on marking plate as standard. Optional marking plates are also available in five colors. · Wide switching current ranges Type RU2 RU4 RU42 Maximum Switching Current 10A 6A 3A Minimum , marking plate; optional marking plates are available in four other colors · Maximum contact ratings: 10A
IDEC
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transistor a110 zener diode a24 SA406B transistor a200 latching RELAY 4PDT 12V SY4S-05A 262-IDEC D-20537 EP1037-1

STTA1206DI

Abstract: STTA1206D RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY , transistor, thus optimizing the overall performance in the end application. The way of calculating the , TRANSISTOR IL DIODE: TURBOSWITCH "A" VR t T F = 1/T = t/T LOAD 3/8 ® STTA1206D(I , : (in the transistor, due to the diode) V IL TRANSISTOR I VR × IRM 2 × ( 3 + 2 × S ) × F 6 x , =24A IL=12A I L=6A dIF/dt(A/ s) 0 100 200 300 400 500 600 700 800 900 1000 Fig 8 : Switching
STMicroelectronics
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STTA1206DI marking L6A
Abstract: low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 0.45 0.55 (—) (—) 0.95 solder , PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 â'" 30 January 2010 Product , (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP , Semiconductors 30 V, 3.5 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning , SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS4032ND ZF 5 NXP Semiconductors
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PBSS4032PD AEC-Q101
Abstract: PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 â'" 27 January 2010 Product , (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN , NXP Semiconductors 30 V, 2.7 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2 , SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS4032PD ZG 5 , VCEsat (BISS) transistor Table 5. Limiting values â'¦continued In accordance with the Absolute NXP Semiconductors
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transistor C5001

Abstract: C5001 transistor 2SC4939 Transistor, NPN Features â'¢ available in PSD package â'¢ high-speed switching , lc/lB = 6A/0.3A â'¢ wide safe operating area (SOA) Applications â'¢ high speed dc-dc converter , Transistors : â  7020^1 oomaoo 145 â  Transistor, NPN, 2SC series 2SC5001F5 Electrical characteristics , Collector-to-emitter voltage VCEO (sus) 60 V lc/lB = 6A/0.6A,L=l mH Collector-to-base breakdown voltage bVcbo 100 , VCB = 10 V, lE = 0 A, f = 1 MHz Turn on time 'on 0.3 US lc = 6A, IBI=-IB2 =0-3 A, Vccs30V Storage
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transistor C5001 C5001 transistor TRANSISTOR MARKING YB transistor marking C5001 c5001 C5001 R

6a smd transistor

Abstract: fzt851 Transistors SMD Type NPN Silicon Planar High Current (High Performance)Transistor FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A , =2A, IB=50mA IC=6A, IB=300mA 50 100 170 375 mV Base-emitter saturation voltage * VBE(sat) IC=6A, IB=300mA 1200 mV Base-Emitter Turn-On Voltage * VBE(on) IC=6A, VCE=1V 1150 , Transitional frequency fT Output capacitance * Pulse test: tp = 300 ìs; d 0.02. Marking Marking
Kexin
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6a smd transistor npn smd 2a smd transistor 2A transistor marking 6A transistor smd 6a smd transistor MARKING 2A npn
Abstract: P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E , such as aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. The transistor , CRETE M ECH AN ICAL D A TA Dimensions in mm Fig. 1 SOT-173. Marking code: C l ♦ 4 min , Rth j-a 200 K/W i r â  bbS 3 T 31 Q017 S 75 5 â  P-N-P 2 GHz wideband transistor , . 302 October 1986 N AUER PHILIPS/DISCRETE ESE D bb5313: P-N-P 2 GHz wideband transistor -
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QQ17S73 BFQ51C BFP90A S3131
Abstract: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 â'" 28 June 2011 , Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN , ) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 C , ); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code , PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5 NXP Semiconductors
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PBSS4350D

6C TRANSISTOR MARKING

Abstract: transistor marking 6c amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. MARKING TYPE MARKING TYPE MARKING NUMBER CODE*1) NUMBER CODE*1) BC817 6D* BC817-25 6B* BC817-16 6A* BC817-40 6C* Note 1 , Philips Semiconductors Product specification NPN general purpose transistor BC817 FEATURES â'¢ High , Note 1. Transistor mounted on an FR4 printed-circuit board. PINNING PIN DESCRIPTION 1 base 2 emitter 3 , Product specification NPN general purpose transistor BC817 THERMAL CHARACTERISTICS SYMBOL PARAMETER
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6C TRANSISTOR MARKING transistor marking 6c transistor 6D bc817 philips transistor 6D sot23 transistor marking 6d MBH720 MBH722

BFQ51C

Abstract: marking code ci WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It , systems, oscilloscopes, spectrum analysers etc. The transistor features extremely high power gain coupled , AMER PHILIPS/DISCRETE mechanical data Fig. 1 SOT-173. T-31-17 ESE D Dimensions in mm Marking code , transistor N AMER PHILIPS/DISCRETE fab53*i31 0017Ã"75 5 â  25E D BFQ51C Tâ'"31â'"17 CHARACTERISTICS Tj , wideband transistor s-parameters (common-emitter) at -Vce = 10 V; Tamt, = 25 °C; typical values. Ic mA f
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marking code ci SOT173 MARKING 0 SOT173 SOT-173 7Z86991 53T31
Abstract: Philips Semiconductors Product specification NPN general purpose transistor BC817W , amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. 3 3 MARKING TYPE NUMBER MARKING CODE«1) TYPE NUMBER MARKING CODE«1) BC817W 6D* BC818W BC817-16W 6A* BC818-16W 6E* BC817-25W 6B* BC818-25W 6F* BC817-40W 6C , Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 A pr 15 2 Philips S em -
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BC818-40W MAM062 SC-70

ZENER A24

Abstract: transistor a110 Snap-on yellow marking plate; optional marking plates are available in four other colors Maximum contact ratings: 10A (RU2), 6A (RU4), 3A (RU42) UL Recognized, CSA Certified, EN Compliant UL508 CSA C22.2 No , through the five small windows. Marking Plate Standard yellow marking plate is easily replaced with optional marking plates in four colors for easy identification of relays. In Normal Operation Timers , . Standard (without lever) AC/DC Color Marking For identification of AC or DC coils. AC coil: Yellow DC
IDEC
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LR35144 EN61810-1 ZENER A24 A220 relay 240v 10a pcb RU coil DC 12v A24 zener E66043 800-262-IDEC 888-317-IDEC
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