NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SEMICONDUCTOR KIA7019AF KIA7019AF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 6A KIA7019AF KIA7019AF * Grade - - Lot No. 816 1 8 Year 0 ~ 9 : 1900~1999 16 2 Week 16 : 16th Week Note) * Grade: Transistor only 98.06.23 Revision No : 00 1/1 ... | Original |
1 pages, |
KIA7019AF transistor marking 6A transistor KIA7019AF abstract |
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| Abstract: Transistors SMD Type NPN Silicon Planar High Current (High Performance)Transistor FZT851 FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at , IC=2A, IB=50mA IC=6A, IB=300mA 50 100 170 375 mV Base-emitter saturation voltage * VBE(sat) IC=6A, IB=300mA 1200 mV Base-Emitter Turn-On Voltage * VBE(on) IC=6A, VCE=1V 1150 , frequency fT Output capacitance * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 ... | Original |
2 pages, |
transistor smd 6a smd transistor MARKING 2A npn smd transistor 2A npn smd 2a 6a smd transistor fzt851 FZT851 FZT851 abstract |
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| Abstract: amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807 BC807. MARKING TYPE MARKING TYPE MARKING NUMBER CODE*1) NUMBER CODE*1) BC817 BC817 6D* BC817-25 BC817-25 6B* BC817-16 BC817-16 6A* BC817-40 BC817-40 6C* Note 1. * = , Philips Semiconductors Product specification NPN general purpose transistor BC817 BC817 FEATURES • High , Note 1. Transistor mounted on an FR4 printed-circuit board. PINNING PIN DESCRIPTION 1 base 2 emitter 3 , Product specification NPN general purpose transistor BC817 BC817 THERMAL CHARACTERISTICS SYMBOL PARAMETER ... | OCR Scan |
5 pages, |
6B marking transistor BC807 transistor 6D sot23 MBH721 MARKING CODE 16 transistor sot23 BC817-40 BC817-16 BC817-25 BC817 MARKING 16 transistor sot23 transistor marking 6A bc817 philips transistor marking 6c BC817 abstract |
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| Abstract: for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51 , : Zigzag folded tape inspecial box. Marking for orientation of transistor not necessary, because box can be , , /g » â- 5 A, /B â- 1.2 A 11.0 A Base-emitter saturation voltage /c=6A,/B = t.2A /C = 5A,/B-1.0A DC , capacitance 'CB «10V,/. = 0,f=1 MHz VÄ-160V -160V. -I, -I, 'C«6A,/B). /c«5A,/B1 = Turn on time Storage time , 6A,/BMi-1.2A 5A,/B,nd-1.0A BUT 76 A Storage time Fall time T =100 °C cas» w 'CES 'cES 'CES ... | OCR Scan |
7 pages, |
BUT76 Electronic Transistors marking va transistors sot-23 MARKING CODE ZA sot-23 TRANSISTOR MARKING 76 TCA 321 transistor BC 245 transistor BF 245 marking 712 transistor BUT 12 transistor t2a 82 MARKING NJ CODE SOT 23 datasheet abstract |
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| Abstract: Orientation of transistor on tape11 Additional marking for specials51 •I 06 «â- View on flat side of , Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example , fiSSOQ^b 0QEH503 0QEH503 S BU 903 IAL66 IAL66 Silicon NPN Power Transistor Application: Switching mode power supply , Emitter-base breakdown voltage /E»1 mA Collector saturation voltage /c*=6A,/b*2A, Base saturation voltage /c-6A,/b»2A DC forward current transfer ratio Vce = 2V,/C-3.2A Vce-BV./0-1.BA VCE=5V,fc«10mA vce = ... | OCR Scan |
8 pages, |
101S transistor BU 102 T0126 marking 603 npn transistor K 2642 transistor K 2642 12A3 101S-122 transistor d 2645 K 2645 transistor 0QEH503 IAL66 0QEH503 abstract |
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| Abstract: 2SC4939 2SC4939 Transistor, NPN Features • available in PSD package • high-speed switching, typically , 6A/0.3A • wide safe operating area (SOA) Applications • high speed dc-dc converter Dimensions , 7020^1 oomaoo 145 â- Transistor, NPN, 2SC series 2SC5001F5 2SC5001F5 Electrical characteristics (unless otherwise , (sus) 60 V lc/lB = 6A/0.6A,L=l mH Collector-to-base breakdown voltage bVcbo 100 V lc = 50 nA , , f = 1 MHz Turn on time 'on 0.3 US lc = 6A, IBI=-IB2 =0-3 A, Vccs30V Storage time lstg 1.5 JXS ... | OCR Scan |
6 pages, |
2SA1834 2sc4939 2SC5001 2SC5001F5 marking code Yb Transistor transistor marking C5001 TRANSISTOR MARKING YB C5001 R c5001 transistor C5001 C5001 transistor 2SC4939 2SC4939 abstract |
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| Abstract: TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE(SAT , Structure 0.55V @ IC / IB = 6A / 300mA TSC5988CT TSC5988CT B0 TSC5988CT TSC5988CT A3 Epitaxial Planar Type , pF Version: D08 TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical , /5 Version: D08 TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical ... | Original |
5 pages, |
TSC5988 Silicon NPN Epitaxial Planar Type npn 120v 10a transistor 60V transistor npn 2a TSC5988 abstract |
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| Abstract: ZXT14P12DX ZXT14P12DX SuperSOT4TM 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 16m ; IC= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the , characterised up to 20A · IC=6A Continuous Collector Current · MSOP8 package C B , MARKING T14P12DX T14P12DX ISSUE 1 - MARCH 2000 1 8 2 1000 units ZXT14P12DXTC ZXT14P12DXTC B 7 QUANTITY , =-1A, I B =-10mA* I C =-1A, I B =-50mA* I C =-6A, I B =-60mA* I C =-6A, I B =-300mA* Base-Emitter ... | Original |
6 pages, |
ZXT14P12DXTC ZXT14P12DXTA ZXT14P12DX MO-187 ZXT14P12DX abstract |
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| Abstract: -CHANNEL MOS FIELD EFFECT TRANSISTOR 3. APPLICATIONS SWITCHING 4. ABSOLUTE MAXIMUM RATINGS [Ta=25 , CONTINUOUS PULSED IDP SOURCE CURRENT CONTINUOUS PULSED 6A PW10s DUTY CYCLE1% IS IP S 2A 2A 6A 10s DUTY CYCLE1% PW TOTAL POWER DISSIPATION (Tc=25) PD 20W CANNEL , BODY DIODE 9. MARKING K3050 K3050 "K3050 K3050 MEANS 2SK3050 2SK3050 . " " " MEANS THE PRODUCTION MONTH PLEASE SEE TABLE 1 FOR DETAILS. Table 1 Production month Marking REV. A TSZ22111 TSZ22111 04 Even ... | Original |
3 pages, |
TSZ22111 2SK3050 300V switching transistor 91208-01001 Diode Marking N iGSS 100nA Vgs 0v transistor equivalent table TSQ03019-108-E00 "Field Effect Transistor" month marking 2A marking transistor 1A 300V TRANSISTOR K3050 2SK3050 abstract |
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| Abstract: Transistors SMD Type PNP Silicon Power Switching Transistor FCX718 FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE(sat) 96mÙ at 2.5A. Absolute , IC=-0.1A,VCE=-2V IC=-2A,VCE=-2V IC=-4A,VCE=-2V IC=-6A,VCE=-2V 300 300 150 35 15 475 450 230 , ) IB1=IB2=15mA 670 ns * Pulse test: tp = 300 ìs; d Marking Marking 2 718 www.kexin.com.cn ... | Original |
2 pages, |
MARKING SMD PNP TRANSISTOR FCX718 MARKING SMD PNP TRANSISTOR 2a smd transistor 718 FCX718 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| = 0) -150 V V EBO Emitter-Base Voltage (I C = 0) -5 V I CM Collector Peak Current -0.6 A P ST | SMALL SIGNAL PNP TRANSISTORS Datasheet SMALL SIGNAL PNP TRANSISTORS SO5401 SO5401 SO5401 SO5401 Document Format Size Document TRANSISTORS n SILICON EPITAXIAL PLANAR PNP TRANSISTORS n MINIATURE PLASTIC PACKAGE FOR APPLICATION IN October 1997 1 2 3 SOT-23 Type Marking SO5401 SO5401 SO5401 SO5401 P33 ABSOLUTE MAXIMUM RATINGS Symbol Parameter www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4305.htm |
STMicroelectronics | 20/10/2000 | 6.54 Kb | HTM | 4305.htm |
| C = 0) -5 V I CM Collector Peak Current -0.6 A P tot Total Dissipation at T c = 25 ST | SMALL SIGNAL PNP TRANSISTORS Datasheet SMALL SIGNAL PNP TRANSISTORS SO5401 SO5401 SO5401 SO5401 Document Format Size 5401 SMALL SIGNAL PNP TRANSISTORS n SILICON EPITAXIAL PLANAR PNP TRANSISTORS n MINIATURE AMPLIFIER INTERNAL SCHEMATIC DIAGRAM October 1997 1 2 3 SOT-23 Type Marking SO5401 SO5401 SO5401 SO5401 P33 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4305-v3.htm |
STMicroelectronics | 25/05/2000 | 6.22 Kb | HTM | 4305-v3.htm |
| FREQUENCY OPERATION SPECIFIED TURN ON SWITCHING CHARACTERISTICS TYPICAL TOTAL LOSSES: 3.5 W (I Fpeak = 6 A TV's and monitors. This device is packaged in D 2 PAK. DESCRIPTION I F(AV) 6 A V RRM 1500 V V F (max forward current d = 0.5 Tc=1305C 1305C 1305C 1305C 6 A I FSM Surge Non Repetitive Forward Current tp = 10ms sinusoidal * I F =6A Tj = 255C 1.5 V Tj = 1005C 1005C 1005C 1005C 1.4 pulse test : * tp = 5 ms , d < 2% * tp = 380 m s, d < 2 A 140 ns RECOVERY CHARACTERISTICS Symbol Test Conditions Min Typ Max Unit t fr (2) Tj = 1005C 1005C 1005C 1005C I F = 6 A www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599-v2.htm |
STMicroelectronics | 14/06/1999 | 5.67 Kb | HTM | 4599-v2.htm |
| FREQUENCY OPERATION SPECIFIED TURN ON SWITCHING CHARACTERISTICS TYPICAL TOTAL LOSSES: 3.5 W (I Fpeak = 6 A TV's and monitors. This device is packaged in D 2 PAK. DESCRIPTION I F(AV) 6 A V RRM 1500 V V F (max forward current d = 0.5 Tc=1305C 1305C 1305C 1305C 6 A I FSM Surge Non Repetitive Forward Current tp = 10ms sinusoidal * I F =6A Tj = 255C 1.5 V Tj = 1005C 1005C 1005C 1005C 1.4 pulse test : * tp = 5 ms , d < 2% * tp = 380 m s, d < 2 A 140 ns RECOVERY CHARACTERISTICS Symbol Test Conditions Min Typ Max Unit t fr (2) Tj = 1005C 1005C 1005C 1005C I F = 6 A www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599-v1.htm |
STMicroelectronics | 02/04/1999 | 5.71 Kb | HTM | 4599-v1.htm |
| SWITCHING CHARACTERISTICS TYPICAL TOTAL LOSSES: 3.5 W (I Fpeak = 6 A, F = 56 kHz) SUITABLE WITH BUH D 2 PAK. DESCRIPTION I F(AV) 6 A V RRM 1500 V V F (max) 1.5 V MAIN PRODUCTS .5 Tc=1305C 1305C 1305C 1305C 6 A I FSM Surge Non Repetitive Forward Current tp = 10ms sinusoidal 100 A T stg Tj = 1005C 1005C 1005C 1005C 1 m A V F * I F =6A Tj = 255C 1.5 V Tj = 1005C 1005C 1005C 1005C 1.4 pulse test : * tp = 5 ms CHARACTERISTICS Symbol Test Conditions Min Typ Max Unit t fr (2) Tj = 1005C 1005C 1005C 1005C I F = 6 A dI F /dt www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599.htm |
STMicroelectronics | 20/10/2000 | 7.88 Kb | HTM | 4599.htm |
| TYPICAL TOTAL LOSSES: 3.5 W (I Fpeak = 6 A, F = 56 kHz) SUITABLE WITH BUH TRANSISTORS SERIES in D 2 PAK. DESCRIPTION I F(AV) 6 A V RRM 1500 V V F (max) 1.5 V MAIN forward current d = 0.5 Tc=1305C 1305C 1305C 1305C 6 A I FSM Surge Non Repetitive Forward Current tp = 10ms * V R = V RWM Tj = 255C 200 m A Tj = 1005C 1005C 1005C 1005C 1 m A V F * I F =6A Tj = 255C 1 Symbol Test Conditions Min Typ Max Unit t fr (2) Tj = 1005C 1005C 1005C 1005C I F = 6 A dI F /dt www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599-v3.htm |
STMicroelectronics | 25/05/2000 | 7.52 Kb | HTM | 4599-v3.htm |
| V V EBO Emitter-Base Voltage (I C = 0) -5 V I CM Collector Peak Current -0.6 A P tot Total ST | SMALL SIGNAL PNP TRANSISTORS SO5401 SO5401 SO5401 SO5401 SMALL SIGNAL PNP TRANSISTORS Document Number: 4305 Date Update: 15/10/97 Pages: 4 The document is SIGNAL PNP TRANSISTORS n SILICON EPITAXIAL PLANAR PNP TRANSISTORS n MINIATURE PLASTIC PACKAGE FOR DIAGRAM October 1997 1 2 3 SOT-23 Type Marking SO5401 SO5401 SO5401 SO5401 P33 ABSOLUTE MAXIMUM RATINGS Symbol Parameter www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4305-v1.htm |
STMicroelectronics | 02/04/1999 | 4.45 Kb | HTM | 4305-v1.htm |
| V V EBO Emitter-Base Voltage (I C = 0) -5 V I CM Collector Peak Current -0.6 A P tot Total ST | SMALL SIGNAL PNP TRANSISTORS SO5401 SO5401 SO5401 SO5401 SMALL SIGNAL PNP TRANSISTORS Document Number: 4305 Date Update: 15/10/97 Pages: 4 The document is SIGNAL PNP TRANSISTORS n SILICON EPITAXIAL PLANAR PNP TRANSISTORS n MINIATURE PLASTIC PACKAGE FOR DIAGRAM October 1997 1 2 3 SOT-23 Type Marking SO5401 SO5401 SO5401 SO5401 P33 ABSOLUTE MAXIMUM RATINGS Symbol Parameter www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4305-v2.htm |
STMicroelectronics | 14/06/1999 | 4.41 Kb | HTM | 4305-v2.htm |
| repetitive peak reverse voltage 600 V I F(RMS) RMS forward current 6 A I FRM Repetitive peak forward current F = 1A dI F /dt = -8 A/ m s dI F /dt = -50 A/ m s 1.6 0.6 A S factor Softness factor Tj = 1255C 1255C 1255C 1255C V OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES AND versus reverse volt - age applied (typical values). STTA106/U STTA106/U STTA106/U STTA106/U 4/9 SWITCHING LOSSES in the transistor due ) considering both diode and companion transistor, thus optimizing the overall performance in the end www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3750-v2.htm |
STMicroelectronics | 14/06/1999 | 8.86 Kb | HTM | 3750-v2.htm |
| peak reverse voltage 600 V I F(RMS) RMS forward current 6 A I FRM Repetitive peak forward current I F = 1A dI F /dt = -8 A/ m s dI F /dt = -50 A/ m s 1.6 0.6 A S factor Softness TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES AND BENEFITS The TURBOSWITCH is a very high performance - age applied (typical values). STTA106/U STTA106/U STTA106/U STTA106/U 4/8 SWITCHING LOSSES in the transistor due to the diode ) considering both diode and companion transistor, thus optimizing the overall performance in the end www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3750.htm |
STMicroelectronics | 20/10/2000 | 11.23 Kb | HTM | 3750.htm |