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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 47 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.47 Price Each : $2.77
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transistor marking 6A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51 , transistor, view on gummed tape S) Additional marking "0": Taping without paper film Additional marking "Z": Zigzag folded tape inspecial box. Marking for orientation of transistor not necessary, because , Base-emitter saturation voltage /c=6A,/B = t.2A /C = 5A,/B-1.0A DC forward current transfer ratio 'ce' >3V , VÃ"-160V. -I, -I, 'C«6A,/B). /c«5A,/B1 = Turn on time Storage time Fall time Inductive load -
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BUT76 BUT76A transistor t2a 82 transistor 81 110 w 85 transistor BUT 12 transistor BC 245 transistor BF 245 T-33-/3 T-33-13 T0126 15A3DIN
Abstract: Tube Tape Reel 1 of 4 QW-R203-008.G TIP41C  NPN PLANAR TRANSISTOR MARKING INFORMATION PACKAGE MARKING TO-220/TO-220F TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-008.G TIP41C  NPN PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC , UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using Unisonic Technologies
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TIP42C TIP41CL- TIP41CG-
Abstract: Transistors UMA6N / FMA6A UMG6N / UMH14NI FMG6A / IMH14A / IMH15A I Digital Transistor , I li II IU91 liv t LW « V V * 2 200mW per eiement must not be e ·Package, marking, and packaging specifications Type Package Marking Code B asic ordering unit (pieces) U M A6A U M T5 A6 TR 3000 , Digital Transistor (Dual Digital Transistors for Inverter Driver) · A b so lu te maximum ratings (Ta=25°C} Parameter Collector-base voltage Coilector-emitter voltage FM G6 U M G 6N / UMH14N / FM G 6A / IMH14A -
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transistor A6A transistor A6A 5 transistor a6n A6A MARKING 6a digital transistor a144* transistor JMH15A 96-492-C
Abstract: UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH , : Emitter  Pin Assignment 1 2 3 B C E B C E Packing Tube Tube MARKING INFORMATION PACKAGE MARKING TO-3P TO-3PN www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R214-008.E 2SC3320  NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM , =1mA MIN 500 400 400 7 IC=6A, IB=1.2A VCBO=500V VEBO=7V IC=6A, VCE=5V 10 IC=7.5A, IB1 =1.5A Unisonic Technologies
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2sc3320 transistor 2SC3320L-
Abstract: UNISONIC TECHNOLOGIES CO., LTD TIP42C-Q PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC TIP42C-Q is a PNP epitaxial planar transistor, designed for using , TIP42CG-Q-x-TA3-T  Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube MARKING INFORMATION PACKAGE MARKING TO-220 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R203-049.a TIP42C-Q  PNP PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATING Unisonic Technologies
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TIP42CL-Q- TIP42CG-Q-
Abstract: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.55V @ IC / IB = 6A / 300mA (Max.) Excellent gain , / IB = 6 / 300mA Epitaxial Planar Type NPN Silicon Transistor Package Packing TO-92 TO , 6A, IB = 30mA IC = 6A, IB = 30mA VCE = 1V, IC = 6A VCE(SAT) 4 VBE(SAT) VBE(ON) - 0.40 Taiwan Semiconductor
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TSC5988CT
Abstract: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR  1 FEATURES SOT-223 * Low saturation voltage with equivalent , MARKING SOT-89 UP1868G SOT-223 Date Code 1 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-015.D UP1868  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM , =-5mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-50mA (Note) IC=-6A, IB=-250mA Base-Emitter Saturation Unisonic Technologies
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UP1868G-AA3-R UP1868G-AB3-R
Abstract: Orientation of transistor on tape11 Additional marking for specials51 â'¢I 06 Â«â  View on flat side of , . Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example ,   fiSSOQ^b 0QEH503 S BU 903 IAL66 Silicon NPN Power Transistor Application: Switching mode power supply , voltage /c~100mA.tc=125mH Emitter-base breakdown voltage /E»1 mA Collector saturation voltage /c*=6A,/b*2A, Base saturation voltage /c-6A,/b»2A DC forward current transfer ratio Vce = 2V,/C-3.2A Vce-BV -
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K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 DIN41
Abstract: Marking Plate 20.4 5.1 19.0 Reliability 3.7 Dimensions (mm) · The simple design without using lead wires ensures high reliability. LED Indicator Versatility · Snap-on marking plate as standard. Optional marking plates are also available in five colors. · Wide switching current ranges Type RU2 RU4 RU42 Maximum Switching Current 10A 6A 3A Minimum , marking plate; optional marking plates are available in four other colors · Maximum contact ratings: 10A IDEC
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transistor a110 zener diode a24 SA406B transistor a200 latching RELAY 4PDT 12V SY4S-05A 262-IDEC D-20537 EP1037-1
Abstract: RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY , transistor, thus optimizing the overall performance in the end application. The way of calculating the , TRANSISTOR IL DIODE: TURBOSWITCH "A" VR t T F = 1/T = t/T LOAD 3/8 ® STTA1206D(I , : (in the transistor, due to the diode) V IL TRANSISTOR I VR × IRM 2 × ( 3 + 2 × S ) × F 6 x , =24A IL=12A I L=6A dIF/dt(A/ s) 0 100 200 300 400 500 600 700 800 900 1000 Fig 8 : Switching STMicroelectronics
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STTA1206DI marking L6A
Abstract: low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 0.45 0.55 (—) (—) 0.95 solder , PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 â'" 30 January 2010 Product , (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP , Semiconductors 30 V, 3.5 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning , SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS4032ND ZF 5 NXP Semiconductors
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PBSS4032PD AEC-Q101
Abstract: PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 â'" 27 January 2010 Product , (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN , NXP Semiconductors 30 V, 2.7 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2 , SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS4032PD ZG 5 , VCEsat (BISS) transistor Table 5. Limiting values â'¦continued In accordance with the Absolute NXP Semiconductors
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Abstract: 2SC4939 Transistor, NPN Features â'¢ available in PSD package â'¢ high-speed switching , lc/lB = 6A/0.3A â'¢ wide safe operating area (SOA) Applications â'¢ high speed dc-dc converter , Transistors : â  7020^1 oomaoo 145 â  Transistor, NPN, 2SC series 2SC5001F5 Electrical characteristics , Collector-to-emitter voltage VCEO (sus) 60 V lc/lB = 6A/0.6A,L=l mH Collector-to-base breakdown voltage bVcbo 100 , VCB = 10 V, lE = 0 A, f = 1 MHz Turn on time 'on 0.3 US lc = 6A, IBI=-IB2 =0-3 A, Vccs30V Storage -
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transistor C5001 C5001 transistor TRANSISTOR MARKING YB transistor marking C5001 c5001 C5001 R
Abstract: Transistors SMD Type NPN Silicon Planar High Current (High Performance)Transistor FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A , =2A, IB=50mA IC=6A, IB=300mA 50 100 170 375 mV Base-emitter saturation voltage * VBE(sat) IC=6A, IB=300mA 1200 mV Base-Emitter Turn-On Voltage * VBE(on) IC=6A, VCE=1V 1150 , Transitional frequency fT Output capacitance * Pulse test: tp = 300 ìs; d 0.02. Marking Marking Kexin
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6a smd transistor npn smd 2a smd 6a transistor smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a
Abstract: P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E , such as aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. The transistor , CRETE M ECH AN ICAL D A TA Dimensions in mm Fig. 1 SOT-173. Marking code: C l ♦ 4 min , Rth j-a 200 K/W i r â  bbS 3 T 31 Q017 S 75 5 â  P-N-P 2 GHz wideband transistor , . 302 October 1986 N AUER PHILIPS/DISCRETE ESE D bb5313: P-N-P 2 GHz wideband transistor -
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QQ17S73 BFQ51C BFP90A S3131
Abstract: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 â'" 28 June 2011 , Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN , ) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 C , ); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code , PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5 NXP Semiconductors
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PBSS4350D
Abstract: amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. MARKING TYPE MARKING TYPE MARKING NUMBER CODE*1) NUMBER CODE*1) BC817 6D* BC817-25 6B* BC817-16 6A* BC817-40 6C* Note 1 , Philips Semiconductors Product specification NPN general purpose transistor BC817 FEATURES â'¢ High , Note 1. Transistor mounted on an FR4 printed-circuit board. PINNING PIN DESCRIPTION 1 base 2 emitter 3 , Product specification NPN general purpose transistor BC817 THERMAL CHARACTERISTICS SYMBOL PARAMETER -
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6C TRANSISTOR MARKING transistor marking 6c transistor 6D bc817 philips transistor 6D sot23 Transistor BC817 MBH720 MBH722
Abstract: WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It , systems, oscilloscopes, spectrum analysers etc. The transistor features extremely high power gain coupled , AMER PHILIPS/DISCRETE mechanical data Fig. 1 SOT-173. T-31-17 ESE D Dimensions in mm Marking code , transistor N AMER PHILIPS/DISCRETE fab53*i31 0017Ã"75 5 â  25E D BFQ51C Tâ'"31â'"17 CHARACTERISTICS Tj , wideband transistor s-parameters (common-emitter) at -Vce = 10 V; Tamt, = 25 °C; typical values. Ic mA f -
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marking code ci SOT173 MARKING 0 SOT173 SOT-173 7Z86991 53T31
Abstract: Philips Semiconductors Product specification NPN general purpose transistor BC817W , amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. 3 3 MARKING TYPE NUMBER MARKING CODE«1) TYPE NUMBER MARKING CODE«1) BC817W 6D* BC818W BC817-16W 6A* BC818-16W 6E* BC817-25W 6B* BC818-25W 6F* BC817-40W 6C , Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 A pr 15 2 Philips S em -
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BC818-40W MAM062 SC-70
Abstract: Snap-on yellow marking plate; optional marking plates are available in four other colors Maximum contact ratings: 10A (RU2), 6A (RU4), 3A (RU42) UL Recognized, CSA Certified, EN Compliant UL508 CSA C22.2 No , through the five small windows. Marking Plate Standard yellow marking plate is easily replaced with optional marking plates in four colors for easy identification of relays. In Normal Operation Timers , . Standard (without lever) AC/DC Color Marking For identification of AC or DC coils. AC coil: Yellow DC IDEC
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LR35144 EN61810-1 ZENER A24 RU coil DC 12v relay 240v 10a pcb A220 E66043 800-262-IDEC 888-317-IDEC
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