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LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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transistor marking 6A

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Abstract: SEMICONDUCTOR KIA7019AF KIA7019AF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 6A KIA7019AF KIA7019AF * Grade - - Lot No. 816 1 8 Year 0 ~ 9 : 1900~1999 16 2 Week 16 : 16th Week Note) * Grade: Transistor only 98.06.23 Revision No : 00 1/1 ... Original
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1 pages,
9.96 Kb

KIA7019AF transistor transistor marking 6A KIA7019AF abstract
datasheet frame
Abstract: Transistors UMA6N / FMA6A UMG6N / UMH14NI UMH14NI FMG6A / IMH14A IMH14A / IMH15A IMH15A I Digital Transistor , I li II IU91 liv t LW « V V * 2 200mW per eiement must not be e ·Package, marking, and packaging specifications Type Package Marking Code B asic ordering unit (pieces) U M A6A U M T5 A6 TR 3000 , Digital Transistor (Dual Digital Transistors for Inverter Driver) · A b so lu te maximum ratings (Ta=25°C} Parameter Collector-base voltage Coilector-emitter voltage FM G6 U M G 6N / UMH14N UMH14N / FM G 6A / IMH14A IMH14A ... OCR Scan
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1 pages,
59.22 Kb

UMH14NI a144* transistor A6A MARKING fm transistor marking code A6a transistor marking 6A 144T 6a digital transistor transistor a6n transistor A6A 5 transistor A6A IMH14A IMH15A UMH14NI abstract
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Abstract: Transistors SMD Type NPN Silicon Planar High Current (High Performance)Transistor FZT851 FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at , IC=2A, IB=50mA IC=6A, IB=300mA 50 100 170 375 mV Base-emitter saturation voltage * VBE(sat) IC=6A, IB=300mA 1200 mV Base-Emitter Turn-On Voltage * VBE(on) IC=6A, VCE=1V 1150 , frequency fT Output capacitance * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 ... Original
datasheet

2 pages,
34.97 Kb

transistor smd 6a transistor marking 6A smd transistor MARKING 2A npn smd transistor 2A smd 6a transistor npn smd 2a fzt851 6a smd transistor FZT851 FZT851 abstract
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Abstract: (Min.)= 600V, ID= 6A 稲DS(ON)=1.4 (Max) @VGS =10V 稱g(typ.) =16nC KF6N60P/F KF6N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60P KF6N60P MAXIMUM RATING (Tc=25) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage , IS=6A, VGS=0V IS=6A, VGS=0V, s dIs/dt=100A/ 390 2.2 6 A 24 1.4 V ns C Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=25V, VGS=0V, f=1.0MHz VDD=300V, ID=6A RG=25 VGS=10V (Note4,5) VDS=480V, ID=6A , limited by junction temperature. Note 2) L = 9.5mH, IS=6A, VDD=50V, RG = 25, Starting Tj = 25. Note 3) IS ... Original
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7 pages,
1218.08 Kb

KF6N60F datasheet abstract
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Abstract: amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807 BC807. MARKING TYPE MARKING TYPE MARKING NUMBER CODE*1) NUMBER CODE*1) BC817 BC817 6D* BC817-25 BC817-25 6B* BC817-16 BC817-16 6A* BC817-40 BC817-40 6C* Note 1. * = , Philips Semiconductors Product specification NPN general purpose transistor BC817 BC817 FEATURES • High , Note 1. Transistor mounted on an FR4 printed-circuit board. PINNING PIN DESCRIPTION 1 base 2 emitter 3 , Product specification NPN general purpose transistor BC817 BC817 THERMAL CHARACTERISTICS SYMBOL PARAMETER ... OCR Scan
datasheet

5 pages,
149.65 Kb

BC807 BC817-16 BC817-25 MARKING 6c transistor marking 6D MBH721 sot23 marking JS v Transistor BC817 transistor marking 6A BC817-40 MARKING 16 transistor sot23 MARKING CODE 16 transistor sot23 transistor marking 6d datasheet abstract
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Abstract: for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51 , : Zigzag folded tape inspecial box. Marking for orientation of transistor not necessary, because box can be , , /g » - 5 A, /B - 1.2 A 11.0 A Base-emitter saturation voltage /c=6A,/B = t.2A /C = 5A,/B-1.0A DC , capacitance 'CB «10V,/. = 0,f=1 MHz VÄ-160V -160V. -I, -I, 'C«6A,/B). /c«5A,/B1 = Turn on time Storage time , 6A,/BMi-1.2A 5A,/B,nd-1.0A BUT 76 A Storage time Fall time T =100 °C cas» w 'CES 'cES 'CES ... OCR Scan
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7 pages,
413.59 Kb

BUT76 Electronic Transistors marking code T33 transistor marking va transistors sot-23 MARKING CODE ZA sot-23 TRANSISTOR MARKING 76 t2a 300v TCA 321 telefunken twt FOR TRANSISTOR BC 149 B marking 712 TRANSISTOR BI 237 datasheet abstract
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Abstract: 2SC4939 2SC4939 Transistor, NPN Features • available in PSD package • high-speed switching, typically , 6A/0.3A • wide safe operating area (SOA) Applications • high speed dc-dc converter Dimensions , 7020^1 oomaoo 145 - Transistor, NPN, 2SC series 2SC5001F5 2SC5001F5 Electrical characteristics (unless otherwise , (sus) 60 V lc/lB = 6A/0.6A,L=l mH Collector-to-base breakdown voltage bVcbo 100 V lc = 50 nA , , f = 1 MHz Turn on time 'on 0.3 US lc = 6A, IBI=-IB2 =0-3 A, Vccs30V Storage time lstg 1.5 JXS ... OCR Scan
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6 pages,
315.61 Kb

transistor marking 6A 2SC5001 2SA1834 2SC SERIES 2sc4939 2SC5001F5 marking code Yb Transistor C5001 R transistor marking C5001 c5001 TRANSISTOR MARKING YB C5001 transistor transistor C5001 2SC4939 2SC4939 abstract
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Abstract: Orientation of transistor on tape11 Additional marking for specials51 •I 06 «- View on flat side of , Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example , fiSSOQ^b 0QEH503 0QEH503 S BU 903 IAL66 IAL66 Silicon NPN Power Transistor Application: Switching mode power supply , Emitter-base breakdown voltage /E»1 mA Collector saturation voltage /c*=6A,/b*2A, Base saturation voltage /c-6A,/b»2A DC forward current transfer ratio Vce = 2V,/C-3.2A Vce-BV./0-1.BA VCE=5V,fc«10mA vce = ... OCR Scan
datasheet

8 pages,
433.25 Kb

K 2642 s 122 transistor sot 903 T0126 telefunken transistor TELEFUNKEN transistors 101S transistor r 606 j transistor BU 608 TRANSISTOR K 2645 transistor 101S-122 TRANSISTOR K 2645 marking 603 npn transistor datasheet abstract
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Abstract: TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 Pin Definition: 1. Emitter 2. Base 3. Collector PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 150V 60V 6A 0.55V @ IC / IB = 6A / 300mA Features , pF 1/5 Version: E11 TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical , /5 Version: E11 TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical , Curve 3/5 Version: E11 TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 Mechanical ... Original
datasheet

5 pages,
127.75 Kb

transistor E11 TSC5988 TSC5988 abstract
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Abstract: TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE(SAT , Structure 0.55V @ IC / IB = 6A / 300mA TSC5988CT TSC5988CT B0 TSC5988CT TSC5988CT A3 Epitaxial Planar Type , pF Version: D08 TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical , /5 Version: D08 TSC5988 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical ... Original
datasheet

5 pages,
200.2 Kb

TSC5988 Silicon NPN Epitaxial Planar Type npn 120v 10a transistor 60V transistor npn 2a TSC5988 abstract
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OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED 25.0 27.5 30.0 32.5 35.0 37.5 40.0 IRM(A) VR=400V 90% CONFIDENCE Tj=125 C IF=12A IF=6A IF=24A dIF/dt(A 0 20 40 60 80 100 120 140 160 180 200 220 trr(ns) VR=400V 90% CONFIDENCE Tj=1255C 1255C 1255C 1255C IF=12A IF=6A ) considering both the diode and the companion transistor, thus optimizing the overall performance in the end /9 Turn-on losses : (in the transistor, due to the diode) P5 = V R y I RM 2 y ( 3 + 2 y S ) y F
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3167-v1.htm
STMicroelectronics 02/04/1999 10.6 Kb HTM 3167-v1.htm
OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED 25.0 27.5 30.0 32.5 35.0 37.5 40.0 IRM(A) VR=400V 90% CONFIDENCE Tj=125 C IF=12A IF=6A IF=24A dIF/dt(A 0 20 40 60 80 100 120 140 160 180 200 220 trr(ns) VR=400V 90% CONFIDENCE Tj=1255C 1255C 1255C 1255C IF=12A IF=6A ) considering both the diode and the companion transistor, thus optimizing the overall performance in the end /9 Turn-on losses : (in the transistor, due to the diode) P5 = V R y I RM 2 y ( 3 + 2 y S ) y F
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3167-v2.htm
STMicroelectronics 14/06/1999 10.56 Kb HTM 3167-v2.htm
AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR 40.0 IRM(A) VR=400V 90% CONFIDENCE Tj=125 C IF=12A IF=6A IF=24A dIF/dt(A/ms) Fig. 4: Peak 80 100 120 140 160 180 200 220 trr(ns) VR=400V 90% CONFIDENCE Tj=1255C 1255C 1255C 1255C IF=12A IF=6A application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall = 1 / T = t / T V R STTA1206D/DI/G STTA1206D/DI/G STTA1206D/DI/G STTA1206D/DI/G 5/9 Turn-on losses : (in the transistor, due to the diode
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3167.htm
STMicroelectronics 20/10/2000 13.22 Kb HTM 3167.htm
BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE CONFIDENCE Tj=125 C IF=12A IF=6A IF=24A dIF/dt(A/ms) Fig. 4: Peak reverse recovery current versus 160 180 200 220 trr(ns) VR=400V 90% CONFIDENCE Tj=1255C 1255C 1255C 1255C IF=12A IF=6A IF=24A dIF/dt ) considering both the diode and the companion transistor, thus optimizing the overall performance in the F = 1 / T = t / T V R STTA1206D/DI/G STTA1206D/DI/G STTA1206D/DI/G STTA1206D/DI/G 5/9 Turn-on losses : (in the transistor, due to
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3167-v3.htm
STMicroelectronics 25/05/2000 12.36 Kb HTM 3167-v3.htm
No abstract text available
www.datasheetarchive.com/download/30239153-742909ZC/70287.pl
SGS-Thomson 07/08/1995 106.54 Kb PL 70287.pl
No abstract text available
www.datasheetarchive.com/download/90212243-999460ZC/dbookold.zip (DBOOKOLD.PDF)
Xilinx 07/09/1996 10340.01 Kb ZIP dbookold.zip
No abstract text available
www.datasheetarchive.com/download/20433182-93221ZC/mc9s12dp256_r11.zip (MC9S12DP256.pdf)
Elektronikladen 10/03/2002 2106.26 Kb ZIP mc9s12dp256_r11.zip
kept at logic zero, the N-channel transistor is off, while the P-channel is on and can conduct. , the configuration after RE- SET enables an internal weak pull-up transistor in order to avoid conditions. In fact, the P-channel transistor of the output buffer implements a direct diode to V DD disabled: it is important to highlight that physically the P-channel transistor is still present
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6993-v2.htm
STMicroelectronics 26/01/2001 725.04 Kb HTM 6993-v2.htm
N-channel transistor is off, while the P-channel is on and can conduct. The opposite occurs when an transistor in order to avoid floating conditions. For other pins this is intrinsically forbidden, like for affect the behaviour of the pin when ex- posed to illegal conditions. In fact, the P-channel transistor physically the P-channel transistor is still present, so the diode to V DD works. In some
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6993-v1.htm
STMicroelectronics 20/10/2000 733.23 Kb HTM 6993-v1.htm
Basic Inverter When an input is kept at logic zero, the N-channel transistor is off, while the most pins, the configuration after RE- SET enables an internal weak pull-up transistor in order to illegal conditions. In fact, the P-channel transistor of the output buffer implements a direct diode to disabled: it is important to highlight that physically the P-channel transistor is still present, so
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6993.htm
STMicroelectronics 09/02/2001 749.42 Kb HTM 6993.htm