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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TRF7003PKR Texas Instruments Silicon RFMOS Discrete Transistor 3-SOT-89 visit Texas Instruments
TRF7003PK Texas Instruments Silicon RFMOS Discrete Transistor 3-SOT-89 visit Texas Instruments

transistor XM SOT-89

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DTC143 XM/XE/XUA/XCA/XSA NPN Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input , DTC143 XM/XE/XUA/XCA/XSA NPN Small Signal Transistor SOT-23 SOT-323 A A F B F B , code. Ordering Information Package Part No. SOT-723 DTC143 XM 8K / 7" Reel SOT , . Type Number Symbol XM 100 Value XUA XCA 200 XE 150 XSA 300 Units Power Taiwan Semiconductor
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100MH 31TYP

transistor XM

Abstract: DTA143 DTA143 XM/XE/XUA/XCA/XSA PNP Small Signal Transistor Small Signal Diode Features Built-in bias , Information Package SOT-723 SOT-523 SOT-323 SOT-23 TO-92S Part No. DTA143 XM DTA143 XE DTA143 XUA DTA143 XCA , XM 100 XE 150 XSA 300 Units mW V V mA °C Notes:1. Valid provided that electrodes are kept , 30 3.29 1.7 4.7 2.1 250 6.11 2.6 K VO=-10V,IO=5mA,f=100MHz MHz Version:A12 DTA143 XM/XE/XUA/XCA/XSA PNP Small Signal Transistor SOT-23 SOT-323 A F A F B E B E
Taiwan Semiconductor
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transistor XM MARKING A12 SOT-23
Abstract: DTA143 XM/XE/XUA/XCA/XSA PNP Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input , =100MHz MHz Version:A12 DTA143 XM/XE/XUA/XCA/XSA PNP Small Signal Transistor SOT-23 SOT-323 A , code. Ordering Information Package Part No. SOT-723 DTA143 XM 8K / 7" Reel SOT , . Type Number Symbol XM 100 PD Value XUA XCA 200 XE 150 XSA 300 Units Power Taiwan Semiconductor
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transistor XM

Abstract: diode marking code xm DTC143 XM/XE/XUA/XCA/XSA NPN Small Signal Transistor Small Signal Diode Features Built-in bias , Information Package SOT-723 SOT-523 SOT-323 SOT-23 TO-92S Part No. DTC143 XM DTC143 XE DTC143 XUA DTC143 XCA , Voltage Output Current Junction and Storage Temperature Range Symbol PD VCC VIN IO TJ, TSTG XM 100 , 2.6 K VO=-10V,IO=5mA,f=100MHz MHz Version:A12 DTC143 XM/XE/XUA/XCA/XSA NPN Small Signal Transistor SOT-23 SOT-323 A F A F B E B E C C D G D Dimensions A B
Taiwan Semiconductor
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diode marking code xm transistor marking code 43 TO92S package
Abstract: DTA143 XM/XE/XUA/XCA/XSA PNP Small Signal Transistor Small Signal Product Features ◇ Built-in , Packing code Packing code (Green) Marking Manufacture code DTA143 XM SOT-723 8K / 7 , specified. Maximum Ratings Parameter Symbol Value XM 100 XE 150 XUA / XCA 200 -50 , code (Green) Marking Manufacture code (Note) DTA143 XM SOT-723 8K / 7" Reel RM , -92S 3K / Box(Ammo) A3 A3G DTA143 XM SOT-723 8K / 7" Reel RM RMG 33 M0 Taiwan Semiconductor
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transistor NEC K 946

Abstract: transistor XM SOT-89 V =1 > \>=7>ì>7.5 Silicon Transistor 2SD1614 NPNi t9 i&mi&wtimmm ft Wl O iâWÅ'icIII» , : Emitter C : Collector* Fin) B : Base (SOT-89) *PWS10 ms, Duty CycleS50 % *16 cm2 X 0.7 mmC7)-fe7î 7 HI , Cycled 2 %/ Pulsed IifeîJiHîîKÃI W i'-P XM XL XK ^FEl 135-270 200-400 300-600 Ïfl'1-S v TC-5811A( Â
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2SB1114 TS14S transistor NEC K 946 transistor XM SOT-89 t460 transistor Nec b 616 T460 PWS350
Abstract: Transistor Ordering information ACE1543B XX + H Halogen - free Pb - free XM : SOT-223 Electrical , ACE1543B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel , Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE1543B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-223 Units: mm VER 1.2 4 ACE1543B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any ACE Technology
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Abstract: ACE1557B N-Channel Enhancement Mode Field Effect Transistor Description The ACE1557B uses , Halogen - free Pb - free XM : SOT-223 VER 1.2 1 ACE1557B N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TA=25â"ƒ, unless otherwise specified. Parameter , =1MHz 1.4 2 VER 1.2 Ω 2 ACE1557B N-Channel Enhancement Mode Field Effect Transistor , Transistor Packing Information SOT-223 Units: mm VER 1.2 4 ACE1557B N-Channel Enhancement Mode ACE Technology
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marking A4t sot23

Abstract: PH C5V1 1N4738A 4738A P SOD66 (DO41) 1PS89SB14 44 SC-89/SOT490 1N4739A 4739A P SOD66 (DO41) 1PS89SB15 43 SC-89/SOT490 1N4740A 4740A P SOD66 (DO41) 1PS89SB16 45 SC-89/SOT490 1N4741A 4741A P SOD66 (DO41) 1PS89SS04 S4 SC-89/SOT490 1N4742A 4742A P SOD66 (DO41) 1PS89SS05 S5 SC-89/SOT490 1N4743A 4743A P SOD66 (DO41) 1PS89SS06 S6 SC-89/SOT490 , BZX84-B68 Z85 SOT23 BZX99-C2V7 XM SOT23 BZX84-B75 Z86 SOT23 BZX99-C3V0 XN
Philips Semiconductors
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marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 1N5817 1N821 1N5818 1N821A 1N5819 1N823

marking A4t sot23

Abstract: A1t SOT23 (DO41) 1PS89SB14 44 SC-89/SOT490 1N4739A 4739A P SOD66 (DO41) 1PS89SB15 43 SC-89/SOT490 1N4740A 4740A P SOD66 (DO41) 1PS89SB16 45 SC-89/SOT490 1N4741A 4741A P SOD66 (DO41) 1PS89SS04 S4 SC-89/SOT490 1N4742A 4742A P SOD66 (DO41) 1PS89SS05 S5 SC-89/SOT490 1N4743A 4743A P SOD66 (DO41) 1PS89SS06 S6 SC-89/SOT490 1N4744A , BZX84-B68 Z85 SOT23 BZX99-C2V7 XM SOT23 BZX84-B75 Z86 SOT23 BZX99-C3V0 XN
Philips Semiconductors
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A1t SOT23 3Ft SOT23 transistor t04 sot23 A4T SOT23 sot23 marking A1T A6t SOT23 1PS59SB10 SC-59/SOT346 1N823A 1PS59SB14 1N825 1PS59SB15

bcv64 SOT143

Abstract: BCV64 BCV64B SILICON PLANAR TRANSISTOR Double P-N-P tran sisto r in a plastic SOT-143 package , N C E D A T A transistor C o lle c to r-e m itte r voltage (open base) Collector-base voltage (open , v CEsat maxhfe 300 100 to 900 mV - V C EO - V C BO - IC Tj m a xm a xmax. max. T1 30 30 100 150 250 , g values in accordance w ith the A b so lu te M axim um System (IEC 134] transistor_ C o lle c , stated transistor C o lle ctor c u t-o ff cu rre n t - l E = 0 ; - V Cb o = 3 0 V - I e = 0; - V C B O Tj
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bcv64 SOT143 BCV63

bd179

Abstract: / = 7 SCS-THOMSON moos Li(gTFi®M(gS BD179 NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed lor medium power linear and switching applications. INTERNAL SCHEMATIC DIAGRAM C o (2) l 6(3) ABSOLUTE MAXIMUM RATINGS , Saturation Voltage · V t w m m xm m m ess sct-moMsoii 3/3 131
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Abstract: designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board , Halide-Free Devices MARKING DIAGRAM XM 1 SOT-963 CASE 527AD MAXIMUM RATINGS (TA = 25°C unless ON Semiconductor
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NSBA114EDP6T5G NSBA114EDP6/D
Abstract: replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is , Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM xM x M G or G = Device ON Semiconductor
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NSBA114EF3T5G 524AA NSBA114EF3/D
Abstract: replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is , Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM xM x M G or G = Device ON Semiconductor
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NSBC114YF3T5G

Abstract: replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is , Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM xM x M G or G = Device
ON Semiconductor
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NSBC114YF3T5G NSBC114EF3T5G NSBC114EF3/D

NSBA114YF3T5TG

Abstract: NSBA114EF3T5G replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The , Recommended Operating Conditions may affect device reliability. xM x M G or G = Device Code = Date
ON Semiconductor
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NSBA114YF3T5TG NSBA114EFT5G NSBA123TF3T5G NSBA124EF3T5G NSBA143EF3T5G NSBA144EF3T5G

NSBC123TPDP6T5G

Abstract: 306 marking code transistor Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , and Q2, - minus sign for Q1 (PNP) omitted) Rating XM SOT-963 CASE 527AD Symbol Value , CHARACTERISTICS - NSBC114EPDP6 NPN TRANSISTOR TA = 150°C 0.10 TA = -55°C 0.01 0 5 10 15 20 25 , NSBC114EPDP6 PNP TRANSISTOR TA = 25°C TA = 150°C 0.10 TA = -55°C 0.01 0 5 10 15 20 25 30 35
ON Semiconductor
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NSBC114EPDP6T5G NSBC123TPDP6T5G 306 marking code transistor NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC124EPDP6T5G NSBC114EPDP6/D
Abstract: NSBA123TF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base , , Halogen Free/BFR Free and are RoHS Compliant PIN 2 EMITTER (GROUND) MARKING DIAGRAM XM 1 XXX M G ON Semiconductor
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AEC-Q101 DTA123T/D

philips diode PH 33D

Abstract: philips diode PH 33J 1N4738A 4738A P SOD66 (DO41) 1PS89SB14 44 SC-89/SOT490 1N4739A 4739A P SOD66 (DO41) 1PS89SB15 43 SC-89/SOT490 1N4740A 4740A P SOD66 (DO41) 1PS89SB16 45 SC-89/SOT490 1N4741A 4741A P SOD66 (DO41) 1PS89SS04 S4 SC-89/SOT490 1N4742A 4742A P SOD66 (DO41) 1PS89SS05 S5 SC-89/SOT490 1N4743A 4743A P SOD66 (DO41) 1PS89SS06 S6 SC-89/SOT490 , BZX84-B68 Z85 SOT23 BZX99-C2V7 XM SOT23 BZX84-B75 Z86 SOT23 BZX99-C3V0 XN
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philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph 1N825A 1PS59SB16 1N827 1PS59SB20 1N827A 1PS59SB21
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