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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor T1J

Catalog Datasheet MFG & Type PDF Document Tags

transistor T1J

Abstract: T1J marking PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion , capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB T1J , T1J 4 1 2.0 ± 0.1 2 0.65 0.59 ± 0.05 PIN CONNECTIONS 1. 2. 3. 4. Base Emitter
NEC
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transistor T1J T1J marking NESG2101M05-T1 PU10190EJ01V0DS

transistor T1J

Abstract: T1J marking Philips Semiconductors Product specification NPN switching transistor FEATURES · Low current , portable and consumer equipment. DESCRIPTION NPN switching transistor in a SOT323 plastic package. MARKING TYPE NUMBER PMST2369 MARKING CODE t1J PINNING PIN 1 2 3 base emitter collector PMST2369 , switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL ^th j-a Note
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transistor T1J

Abstract: NESG2101M05-A NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP , 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB T1J 130 to 260 2 Data Sheet
California Eastern Laboratories
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NESG2101M05-A M05 MARKING transistor T1J 4pin NESG2101M05-T1-A PU10190EJ02V0DS

transistor T1J

Abstract: NESG2101M05-T1 NPN RF NPN Silicon Germanium RF Transistor NESG2101M05 NPN SiGe RF 125 mW 4 M05 PO , ­ dB 1. PW 350 µsDuty Cycle 2% 2. 3. MSG = S21 S12 hFE T1J hFE 2 , 4 M05mm 2.05±0.1 2 0.11+0.1 ­0.05 1 4 0.30+0.1 ­0.05 T1J 0.65 0.65 1.30
NEC
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RF transistor PU10190JJ02V0DS L044-435-1588 X044-435-1579 X044-435-1918

transistor T1J

Abstract: NESG2101M05-T1 DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion, low , when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking T1J hFE , T1J 0.65 0.65 1.30 0.59±0.05 2.0±0.1 3 1.25±0.1 PIN CONNECTIONS 1. 2. 3. 4
NEC
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IC802

Abstract: RTL 602 W %61#+%!)*%!"#.-!V5U7 ED8 5*%+$!&,?):#(%!&%).-/7 X%61#+%!)*%!B6%#$%(&7 EDP Z,%&!,6%(#).,-!(%)'(-!), -,(T#1J EDE X , ,-!(%)'(-!), 9O -,(T#1J >D8 5*%+$!+,-?./'(#).,-7 D H"#IJKL3-D$M#$.-2/34.4 /). 8 4FEB?)E ^%W!),6 , )%3J ID8 X%61#+%!)*%!$%W0,#(37 , DIODE DIODE DIODE TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR 2 5 1 1 4 1 2 5 6 5 4 2 17-3 Q213 247 LD1 IC222 IC221 IC9 IC203 IC206 IC28
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VC175 IC802 RTL 602 W K40 fet IC-221 DFJP050ZA002 I/08/4 65134B 086C3 9E73B 518D9 I5134

transistor T1J

Abstract: 2N3904 the absolute value of the transistor's base emitter voltage so that no calibration is required. The , temperature sensor. Figure 13 shows the external sensor as a substrate transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector is not grounded and should be linked to the base. To prevent ground noise , transistor, operated at constant current. Unfortunately, this technique requires calibration to null out the
ON Semiconductor
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ADM1032 2N3904 2N3906 ADM10321 2N3904/06

ADM1032ARMZ T1J

Abstract: ADM1032ARMZ-1 ), accurate to 1°C. A novel measurement technique cancels out the absolute value of the transistor's base , sensor as a substrate transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector is not , the base-emitter voltage of a transistor, operated at constant current. Unfortunately, this , sensor is performed in a similar manner. VDD N×I IBIAS D+ REMOTE SENSING TRANSISTOR VOUT
Analog Devices
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ADM1032ARMZ T1J ADM1032ARMZ-1 ADM1032ARMZ-2REEL MO-187-AA MS-012-AA ADM1032ARMZ-REEL7 C01906-0-11/05

nesg2101m05-t1-a

Abstract: NESG2101M05-A A Business Partner of Renesas Electronics Corporation. NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) Data Sheet R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES · · · · The device is an ideal choice for medium output , 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB/YFB T1J 130 to 260 , (Bottom View) (1.05) (0.65) T1J 4 1 2.0±0.1 0.65 0.30+0.1 ­0.05 1.30 0.5 PIN
Renesas Technology
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transistor T1J

Abstract: NESG2101M05-T1 . DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM , when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking T1J hFE , T1J 0.65 0.65 1.30 0.59±0.05 2.0±0.1 3 1.25±0.1 PIN CONNECTIONS 1. 2. 3. 4
NEC
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NEC NESG2101M05 MICROWAVE TRANSISTOR

IH33

Abstract: gsm 900 amplifier fechnoiogies Infineon CGY 98 GSM/PCN Dual Band Power Amplifier 1 1.1 Schematic of the CGY 98 PA Application Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1 .2. Each one uses a BFP 420 SIEGET® transistor for first-stage amplification, and the CGY 98 GaAs MMIC for the final two stages. The amplifier chains can be , ' Delta 1[T1J RefLvI -43.51 dB 36.8 dBm 1.74299198 GHz 40 36.8 cBOffset 30 ri RßW 1 0 MH2 RFAtl 10 dB
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IH33 gsm 900 amplifier 1AP 164 d 317 transistor LQG21N D-85375 LL1005
Abstract: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise , hFE CLASSIFICATION Rank Marking hFE Value FB/YFB T1J 130 to 260 R09DS0036EJ0300 Rev. 3.00 Jun , ) 2.05±0.1 1.25±0.1 (1.05) 3 2 (Bottom View) (0.65) T1J 4 1 2.0±0.1 0.65 0.30+0.1 ­0.05 Renesas Electronics
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Abstract: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES â'¢ The device is an ideal choice for medium output power, high-gain amplification and low distortion, low , T1J 130 to 260 R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 2 of 13 NESG2101M05 TYPICAL , 2 1 4 0.30+0.1 â'"0.05 T1J (0.65) 0.65 1.30 3 (1.05) 2.0±0.1 0.11+0.1 Renesas Electronics
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marking A4t sot23

Abstract: A1t SOT23 NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · · · · · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M05 , LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 3 2 T1J 4 1 0.65 1.30 2.0 ±0.1
Philips Semiconductors
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marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 transistor marking codes A4p 1N5817 1N821 1N5818 1N821A 1N5819 1N823

marking A4t sot23

Abstract: PH C5V1 NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) · HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz · LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz · HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz · LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better , ) PACKAGE OUTLINE M05 FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 2 T1J 3 2.0
Philips Semiconductors
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T2D 79 diode C18 ph diode T2D DIODE A4T SOT23 1n4148 sot23 A6t SOT23 1PS59SB10 SC-59/SOT346 1N823A 1PS59SB14 1N825 1PS59SB15

transistor T1J

Abstract: bjt npn NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) · HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz · LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz · HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz · LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better , MINIMOLD 2.05±0.1 1.25±0.1 3 T1J 2 2.0 ±0.1 4 0.65 1.30 0.65 1 +0.1
California Eastern Laboratories
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bjt npn NEC 9319

transistor gl 1117

Abstract: NEC NESG2101M05 absolute value of the transistor's base emitter voltage so that no calibration is required. The ADM1032 , base-emitter voltage of a transistor, operated at constant current. Unfortunately, this technique requires , the external sensor as a substrate transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the , + REMOTE SENSING TRANSISTOR C1 D­ BIAS DIODE LOW-PASS FILTER fC = 65kHz VOUT+ TO ADC VOUT­ CAPACITOR
California Eastern Laboratories
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transistor gl 1117 1GP20 IC 7408 re 10019 S21E

BF 3027

Abstract: transistor T1J absolute value of the transistor's base emitter voltage so that no calibration is required. The ADM1032 , transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector is not grounded and should be linked , negative temperature coefficient of a diode, or the base-emitter voltage of a transistor, operated at , SENSING TRANSISTOR C1* D- BIAS DIODE VOUT+ To ADC VOUT- LOW-PASS FILTER fC = 65 kHz * CAPACITOR C1
California Eastern Laboratories
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BF 3027 13444 GA1060 nec 2562 14851 mje 2055

1032AR

Abstract: SOT23 NPN marking 4d discrete microwave transistor series can be broadly divided into single type and twin type. The former , made up of transistor arrays and prescalers, amplifiers, mixers, modulators/demodulators, and PLL , FB T1J F4TSMM NESG2101M05 2 20 2 18 2 5 2 0.9 1.1 FB zD , available. Absolute Maximum Ratings Part Transistor (TA = +25°C) Internal Number Electrical
ON Semiconductor
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1032AR SOT23 NPN marking 4d T1C MSOP-8 0250C ADM1032-1 ADM1032-2 846AB ADM1032/D

1032ar

Abstract: T1J marking diode absolute value of the transistor's base emitter voltage so that no calibration is required. The ADM1032 , sensor. Figure 12 shows the external sensor as a substrate transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector is not grounded and should be linked to the base. To prevent ground noise , the base-emitter voltage of a transistor, operated at constant current. Unfortunately, this technique
ON Semiconductor
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T1J marking diode SOT-23 marking t1c 1032ar01 1023A 1023AR

transistor marking T79 ghz

Abstract: marking code C1H mmic the absolute value of the transistor's base emitter voltage so that no calibration is required. The , transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector is not grounded and should be linked , voltage of a transistor, operated at constant current. Unfortunately, this technique requires calibration , currents. VDD I N× I IBIAS D+ REMOTE SENSING TRANSISTOR VOUT+ TO ADC C1 D­ BIAS
NEC
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transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic data book transistors 2SA PU10015EJ04V0PF

ADM1032 D

Abstract: temperature sensor. Figure 12 shows the external sensor as a substrate transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector is not grounded and should be linked to the base. To prevent ground noise , negative temperature coefficient of a diode, or the base-emitter voltage of a transistor, operated at , IBIAS VOUT+ D+ REMOTE SENSING TRANSISTOR To ADC C1* Dâ' BIAS DIODE VOUTâ
ON Semiconductor
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ADM1032 D

1032AR

Abstract: SOT-23 marking t1c relatively low impedance transistor (« Si kii) is switched on momentarily for 1/5 of a machine cycle whenever a '1' is written to the line. When a '0' is written, a low impedance (= 300 O) transistor overcomes the light pull-up and provides TTL current sinking capability. Since the pull-down transistor is , Quasi-bidirectional port structure. Test (TO, T1j and INT inputs Three piins serve as inputs and are testable with
ON Semiconductor
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ADM1032ARZ marking code 8 lead soic-n package analog devices
Abstract: transistor, Q1, and capacitor, Cd, to be used. Base-emitter damping is important to reduce the possibility , current paths are via the 5 0 m fi sense resistor, the series switching transistor, output inductor L1 , transistor. Using an FMMT718 which drops only 200mV @ 1.5A the converter operates at an efficiency of over 90% at minimum input voltage and an Iout of 1.5A. The transistor's high gain allows base drive ON Semiconductor
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philips diode PH 33D

Abstract: philips diode PH 33J example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , dual gate digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
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philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph 1N825A 1PS59SB16 1N827 1PS59SB20 1N827A 1PS59SB21

philips diode PH 33D

Abstract: PH C5V1 transistor with a Vc e (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation , BC547C 1Gs 1GR 1GT 1G 1G p1G t1G t1G 1GM 1Hp 1Ht 1Ht 1H1H 1H t1H 1HT 1J 1Js 1Js 1J 1J 1Js 1Jp p1J t1J t1J 1JA 1JR 1JZ 1K 1Kp 1Ks 1Ks 1K p1K t1K t1K 1K 1Ks 1Kp 1KR 1KM 1KZ 1L 1Lp 1Ls 1Ls 1L 1L 1L 1Lp p1L
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PH 33D PH33D ph33g PH 33G philips diode PH 37m ph c24 1N829 1N829A 1N914 1N4148 1N4150 1N4151

MAB8048HP

Abstract: 16x8 dual ram example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small signal , transistor maximum available gain maximum minimum microwave minature integrated circuit modular amplifier - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
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MAB8048H MAB8035HL MAB8048HP 16x8 dual ram intel 8048h PC SOT-145 sot145 MAB8048M 40-LEAD

AD5820

Abstract: ­ cepting the interrupt request. OP08/IP08) R83 (T1J of external interrupt should be disabled or
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AD5820 OPA655 OPA655P BY328 PCF8583T P87C528EBPN NE5200D

SMD Codes

Abstract: TRANSISTOR SMD T1P Codebook Page 1 t1J t1J 1JA 1JR 1JZ 1K 1Kp 1Ks 1Ks 1K p1K t1K t1K 1K 1Ks 1Kp PMBT2369 PMBT2369
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SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

MMBD2104

Abstract: Transistor NEC 05F 12 Application Notes Understanding Transistor Response Parameters RF Small-Signal Design Using 2-Port Parameters Selecting Commercial Power Transistor HeatSinks Mounting Procedure For, And Thermal Aspects of , Theory and Characteristics of the Unijunction Transistor Unijunction Transistor Timers and Oscillators , Bi-Polar Transistor Short-Form Specifications This table serves tw o functions. It lists all 2N and 3N , transistor types. Those 2N type numbers repre­ senting semiconductor devices other than bi-polar
SMD Code Book
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Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d T2D DIODE 3w MMBD2103 BAV105 LL4148 LL4448 BB241 BB249 LL914

MMBD2103

Abstract: ZENER DIODE t2d with the Transistor D.A.T.A. book. 81F3801- Type XT. 54.00 DIODES Over 43,300 diodes
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MMBD2101 MMBD2102 bc107 TRANSISTOR SMD CODE PACKAGE SOT23 ZENER DIODE t2d 93 BAT15-115S NDS358N LL4150 BB219 LL300 BA682 BA683 BA423L
Abstract: (resistors, coils, etc.) that might have been damaged if the original transistor was shorted. In most auto radio output stages, check emitter resistor (replacement transistor will be permanently damaged if this , positive, the transistor is NPN, if the voltage reading is negative, the transistor is PNP. 2. Germanium , , the transistor is germanium. If the voltage is approximately 0.6 volt, the transistor is silicon. 3 -
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TLCS-47E P47C243/443 47C243/443 TLCS-470 TMP47C243N TMP47C443N