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BCV26_L99Z Fairchild Semiconductor Corporation PNP Darlington Transistor ri Buy
KSA1156YSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy
KSA1156OSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy

transistor NEC B 617

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 2SC5010 is an NPN epitaxial silicon transistor designed for use in , fo r any e rro rs w h ich may appear in th is docum ent. NEC C orporation does not assum e any lia b , nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique , . * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall ... OCR Scan
datasheet

10 pages,
228.04 Kb

zo 607 p 408 transistor 3568 ic 151 811 7749 transistor 2sc5010 transistor NEC B 617 nec 2035 744 TEXT
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Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA , u b lish ed N o ve m b e r 1 996 N P rinted in Ja p a n _ © n . NEC Corporation 1994 NEC 2SC5186 2SC5186 ELEC TR IC A L C H A RA CTERISTICS (T a = 25 C) PARAMETER SYMBOL MIN , . * C ontact your NEC sales representatives to order sam ples for evaluation (available in batches of , not to allow excessive current to flo w through the transistor, including static electricity. D o c u ... OCR Scan
datasheet

9 pages,
82.78 Kb

TEXT
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Abstract: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5338 2SC5338 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY , perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 113.6 103.3 96.7 92.0 89.2 86.9 84.3 82.7 81.8 80.4 77.2 67.5 64.6 63.4 61.7 60.9 60.3 , 95.0 91.8 89.3 86.7 84.9 84.0 82.6 79.5 69.9 67.0 66.2 64.7 64.1 62.6 61.7 60.7 0.037 ... NEC
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datasheet

8 pages,
52.83 Kb

transistor NEC B 617 iC 828 Transistor 2SC5338-T1 2SC5338 2SC4703 TEXT
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Abstract: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR , N CP(K) Printed in Japan © NEC Corporation 1998 NEC hFE CLASSIFICATION RANK Marking hFE EB , DISSIPATION 50 Vce= 3 V 5 £ < E 40 COLLECTOR CURRENT vs. DC BASE VOLTAGE 30 Q ¡5 5 CL o B O £ o O , 2 Preliminary Data Sheet NEC GAIN BANDWIDTH PRODUCT 2SC5435 2SC5435 INSERTION POWER GAIN fr - , /fNSERTlON N F - Noise Figure - d B 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 ... OCR Scan
datasheet

8 pages,
342.88 Kb

TL 431 0323 9418 transistor transistor NEC D 822 P TL 1701 transistor NEC B 617 NEC 2987 2SC5435 TEXT
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Abstract: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R , pT Notel T, Tstg PIN CONNECTIONS E: Emitter C: Collector B: Base Note 1 . 0.7 mm x 16 cm , Published April 1996 P Printed in Japan © NEC Corporation 1996 NEC ELECTRICAL CHARACTERISTICS (TA , < < NEC TYPICAL CHARACTERISTICS (TA= 25 °C) lc - V ce 2SC5338 2SC5338 Characteristics lc- Collector , Collector Current - mA - Collector to Base Voltage - V IM2 - lc Characteristics Distortion - d B ... OCR Scan
datasheet

10 pages,
139.92 Kb

transistor NEC D 587 transistor NEC B 617 nec 2501 Le 629 nec hf 324 2SC5338 TEXT
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Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES · · · · Small Package High Gain Bandwidth Product , 0.1 ^ 0- 15-o, * Please contact with responsible NEC person, if you require evaluation sample , S 0 0 (2nd e d itio n ) (P re v io u s No. T D -7 9 3 8 ) D ale P u b lish e d A u g u s i 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL CHARACTERISTICS (T a = 25 C ... OCR Scan
datasheet

8 pages,
154.41 Kb

nec d 1590 transistor NEC B 617 3563 1231 TEXT
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Abstract: DATA DATA PRELIMINARY SHEETSHEET Silicon Transistor 2SC5338 2SC5338 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5338 2SC5338 is designed for a low , ±0.06 V Collector Current E 0.42 ±0.06 V Collector to Emitter Voltage B , Storage Temperature Tstg 1.5 3.0 0.46 ±0.06 PIN CONNECTIONS E: Emitter C: Collector B , .322 - 96.3 1600 .349 157.0 2.017 61.7 .220 68.8 .314 - 92.3 1700 ... NEC
Original
datasheet

10 pages,
73.2 Kb

2SC4703 NPN transistor mhz s-parameter transistor NEC B 617 sf 818 transistor 2SC5338 TEXT
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Abstract: DATA SHEET SILICON TRANSISTOR 2SC3355 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 2SC3355 is an NPN silicon epitaxial transistor designed for low , = 11 d B T Y P . @ V c e = 1 0 V , Ic = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (T a = 25 °C , EST CO NDITIONS Collector Cutoff Current Ic B O 1.0 juA V cb = 10 V , I e = 0 Em , Printed in Japan © NEC Corporation 1985 NEC 2SC3355 2SC3355 TYPICAL CHARACTERISTICS (T a = 2 5 °C ... OCR Scan
datasheet

4 pages,
92.21 Kb

2SC3355 TEXT
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Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 2SC4228 is a low supply voltage transistor , high density surface mount assembly since the , transistor has been applied super mini mold , (NESAT™ process) which is an NEC proprietary fabrication technique. FEATURES • High fT : 8.0 , 2. Base 3. Collector Please contact with responsible NEC person, if you require evaluation ... OCR Scan
datasheet

6 pages,
58.06 Kb

TEXT
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Abstract: transistor junction and package capacitors CEB, CCB and CCE are separated from the rest of the transistor , View of the Colpitts VCO Alpha Industries, Inc. [781] 935-5150 · Fax [617] 824-4579 · Email , measured at the input of the transistor), and QL is loaded Q. These three parameters have significant , depend on transistor choice. Usually the best noise is achieved with high gain transistors with maximum , currently available for industry standard transistors, we can only base our transistor choice on ... Alpha Industries
Original
datasheet

12 pages,
392.33 Kb

Colpitts circuit design Colpitts VCO CR10-101J CR10-152J-T varactor diode for Colpitts oscillator APN1007 spice model smp1320-079 Colpitts 0402AU101KAT SMP1320-079 VCO circuit diagram loop gain of Colpitts VCO design 4 ghz SMP1320-079 spice APN1015 transistor NEC B 617 APN1015 kvar schematic APN1015 KYOCERA RESISTOR NETWORKS APN1015 SMV1320-079 APN1015 gsm circuit diagram project APN1015 Colpitts VCO design APN1015 varactor 650 manual APN1015 APN1015 APN1015 TEXT
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.SUBCKT MJ15023 MJ15023 1 2 3 * TERMINALS: C B E * 200 Volt 16 Amp SiPNP Power Transistor 08-16-1995 1 2 3 * TERMINALS: C B E * Motorola 60 Volt 60 Amp SiPNP Power Transistor 08-02-1993 Q1 1 1 2 3 * TERMINALS: C B E * Motorola 140 Volt 20 Amp SiNPN Power Transistor 08-02-1993 Q1 * TERMINALS: C B E * 60 Volt 1.5 Amp SiPNP Power Transistor 11-11-1992 Q1 1 2 3 QPWR .67 Q2 1 4 3 BD135 BD135 1 2 3 * TERMINALS: C B E * 45 Volt 1.5 Amp SiNPN Power Transistor 11-11-1992 Q1 1 2
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