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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

transistor NEC B 617

Catalog Datasheet MFG & Type PDF Document Tags

transistor NEC B 617

Abstract: nec 2035 744 DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in , fo r any e rro rs w h ich may appear in th is docum ent. NEC C orporation does not assum e any lia b , nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique , . * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall
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transistor NEC B 617 nec 2035 744 transistor 3568 7749 transistor zo 607 p 408 ic 151 811 2SC5010-T1

NF 831

Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA , u b lish ed N o ve m b e r 1 996 N P rinted in Ja p a n _ © n . NEC Corporation 1994 NEC 2SC5186 ELEC TR IC A L C H A RA CTERISTICS (T a = 25 C) PARAMETER SYMBOL MIN , . * C ontact your NEC sales representatives to order sam ples for evaluation (available in batches of , not to allow excessive current to flo w through the transistor, including static electricity. D o c u
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NF 831 2SC5186-T1

transistor NEC B 617

Abstract: dsa0022806 DATA SHEET NPN SILICON RF TRANSISTOR 2SC5338 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY , perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 113.6 103.3 96.7 92.0 89.2 86.9 84.3 82.7 81.8 80.4 77.2 67.5 64.6 63.4 61.7 60.9 60.3 , 95.0 91.8 89.3 86.7 84.9 84.0 82.6 79.5 69.9 67.0 66.2 64.7 64.1 62.6 61.7 60.7 0.037
NEC
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2SC4703 2SC5338-T1 dsa0022806 iC 828 Transistor sf 818 transistor

NEC 2987

Abstract: transistor NEC B 617 PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR , N CP(K) Printed in Japan © NEC Corporation 1998 NEC hFE CLASSIFICATION RANK Marking hFE EB , DISSIPATION 50 Vce= 3 V 5 £ < E 40 COLLECTOR CURRENT vs. DC BASE VOLTAGE 30 Q ¡5 5 CL o B O £ o O , 2 Preliminary Data Sheet NEC GAIN BANDWIDTH PRODUCT 2SC5435 INSERTION POWER GAIN fr - , /fNSERTlON N F - Noise Figure - d B 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2
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NEC 2987 transistor NEC D 822 P TL 1701 TL 431 0323 9418 transistor

nec hf 324

Abstract: transistor NEC D 587 PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R , pT Notel T, Tstg PIN CONNECTIONS E: Emitter C: Collector B: Base Note 1 . 0.7 mm x 16 cm , Published April 1996 P Printed in Japan © NEC Corporation 1996 NEC ELECTRICAL CHARACTERISTICS (TA , < < NEC TYPICAL CHARACTERISTICS (TA= 25 °C) lc - V ce 2SC5338 Characteristics lc- Collector , Collector Current - mA - Collector to Base Voltage - V IM2 - lc Characteristics Distortion - d B
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nec hf 324 transistor NEC D 587 nec 2501 Le 629 NEC 2501 LE 737 341S P10940EJ1V0DS00

3563 1231

Abstract: transistor NEC B 617 DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES · · · · Small Package High Gain Bandwidth Product , 0.1 ^ 0- 15-o, * Please contact with responsible NEC person, if you require evaluation sample , S 0 0 (2nd e d itio n ) (P re v io u s No. T D -7 9 3 8 ) D ale P u b lish e d A u g u s i 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL CHARACTERISTICS (T a = 25 C
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3563 1231 nec d 1590 2SC5015-T1 2SC5015-T2 2SC5014

sf 818 transistor

Abstract: transistor NEC B 617 DATA DATA PRELIMINARY SHEETSHEET Silicon Transistor 2SC5338 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5338 is designed for a low , ±0.06 V Collector Current E 0.42 ±0.06 V Collector to Emitter Voltage B , Storage Temperature Tstg 1.5 3.0 0.46 ±0.06 PIN CONNECTIONS E: Emitter C: Collector B , .322 - 96.3 1600 .349 157.0 2.017 61.7 .220 68.8 .314 - 92.3 1700
NEC
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NPN transistor mhz s-parameter

transistor NEC D 822 P

Abstract: transistor NEC B 617 DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low , = 11 d B T Y P . @ V c e = 1 0 V , Ic = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (T a = 25 °C , EST CO NDITIONS Collector Cutoff Current Ic B O 1.0 juA V cb = 10 V , I e = 0 Em , Printed in Japan © NEC Corporation 1985 NEC 2SC3355 TYPICAL CHARACTERISTICS (T a = 2 5 °C
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SC-43B

transistor NEC D 822 P

Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor , high density surface mount assembly since the , transistor has been applied super mini mold , (NESATâ"¢ process) which is an NEC proprietary fabrication technique. FEATURES â'¢ High fT : 8.0 , 2. Base 3. Collector Please contact with responsible NEC person, if you require evaluation
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SC-70 2SC4228-T1 2SC4228-T2

varactor 650 manual

Abstract: Colpitts VCO design transistor junction and package capacitors CEB, CCB and CCE are separated from the rest of the transistor , View of the Colpitts VCO Alpha Industries, Inc. [781] 935-5150 · Fax [617] 824-4579 · Email , measured at the input of the transistor), and QL is loaded Q. These three parameters have significant , depend on transistor choice. Usually the best noise is achieved with high gain transistors with maximum , currently available for industry standard transistors, we can only base our transistor choice on
Alpha Industries
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APN1015 APN1007 varactor 650 manual Colpitts VCO design gsm circuit diagram project SMV1320-079 KYOCERA RESISTOR NETWORKS kvar schematic PN9000 APN1004 APN1006 APN1005
Abstract: itio n ) D ate P u b lish ed F e b ru a ry 1 99 6 P P rinted in Ja pa n © NEC Corporation 1 9 9 6 NEC 2SC4185 TYPICAL CHARACTERISTICS (T a = 25 °C) TO TAL POWER DISSIPATION vs. AM , DATA SHEET SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device in m -
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nec 3326

Abstract: Nec b 616 -34.8 - 40.4 -46.1 -50.7 -5 4 5 -57.3 -62.3 -65.0 -70.0 S11 B NEC V ce = 2 V , lc = 5 mA, Zo , DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER , Japan Q N K Corporation 1994 ^ NEC ELECTRICAL CHARACTERISTICS (T a = 25 °C) PARAMETER , mo CURVES / jj O 3 S "0 6 0 p H md $ &. s B P t 3 «3 (T a = 2 5 °C) 5 lc - Collector Currarrt - mA 88 33 SS JJ > 5< 5 « 33Z o m 3 < Q _ I < NEC NOISE
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nec 3326 Nec b 616 NF 948 2SC5181-T1 P12105EJ2V0DS0Q TC-2478

transistor NEC D 822 P

Abstract: transistor NEC B 617 PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R , = 25 °C) P aram eter Collector to B ase V oltage Collector to Em itter Voltage Em itter to B ase V , rr n Notel W °C °c PIN C O N N EC TIO N S E: Emitter C: Collector B: Base Tj Tstg Note 1 , © NEC Corporation 1996 NEC TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs , Current - mA GAIN B A NDW IDTH PRODUCT vs. INSERTION GAIN .MAXIMUM GAIN vs. FREQUENCY - Gain
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NEC D 822 P NEC D 809 NEC B 617 NEC D 809 F 4435 power ic P1093 2SC3357
Abstract: DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER , (collector) facing the perforation C ontact your NEC sales representatives to order sam ples for , s h ig h -fre q u e n c y te c h n o lo g y . B e c a re fu l n o t to a llo w e x c e s s iv e c u , P u b lish ed N o ve m b e r 1 996 N P rinted in Ja p a n © N CC rp ratio E o o n r 1994 NEC 2SC5181 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) MAX. UNIT Collector Cutoff -
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transistor NEC B 617

Abstract: nec k 3115 DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY , perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 66.0 66.1 64.0 64.2 63.5 63.3 61.7 0.017 0.027 0.035 0.042 0.052 0.061 0.071 0.081 , E B 2.45±0.1 C E 0.1 0.8 MIN. 1.55 3.95±0.25 0.3 1.5±0.1 0.46 ±0.06
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2SC5336-T1 nec k 3115 NEC k 3115 transistor NEC 718

transistor NEC D 822 P

Abstract: NEC D 986 DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed , transistor has been applied super mini mold package. This is achieved by direct nitride passivated base surface process (N E S A TTM process) w hich is an NEC proprietary fabrication technique. PACKAGE , . Base 3. Collector * Please contact with responsible NEC person, if you require evaluation sample
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NEC D 986 transistor D 2624 r44 marking

transistor NEC D 882 p

Abstract: nec d 882 p transistor transistor others. W hile NEC C orporation has been making co ntinuous effort to enhance the re lia b ility of its , DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD , , pins No. 1 (Emitter) and No. 2 (Base) facing the perforations * Contact your NEC sales , . Collector CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity Document No. P12103EJ2V0DS00 (2nd
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transistor NEC D 882 p nec d 882 p transistor transistor 33 nec 125 t2 2SC5179-T1 2SC5179-T2 TC-2476

transistor C 5386

Abstract: 24 5805 054 000 829 DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER , : Contact your NEC sales representative to order sam ples for evaluation (available in batches of 50). , perature Storage Tem perature mA mW C C T, Tstg Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static , N Printed in Japan © NEC Corporation 1994 _ . NEC E L E C T R IC A L C H A R A C T E R
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transistor C 5386 24 5805 054 000 829 c 4468 power transistor 2SG5184-T1 2SC5184-T2 P12108EJ2V0DS00 TC-2481

4435 power ic

Abstract: transistor NEC B 617 PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH , ) B 0.42 ±0.06 0.42 ±0.06 1.5 3.0 2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Symbol , B: Base Note 1. 0.7 mm × 16 cm double sided ceramic substrate (Copper plating) Parameter E , .260 140.4 1.986 61.7 .184 77.5 .535 - 61.3 5 2SC5336 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC
NEC
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IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor gh 312 audio amplifier IC 810
Abstract: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR , 1998 N CP(K) Printed in Japan © NEC Corporation 1998 NEC 2SC5435 h fé CLASSIFICATION , VOLTAGE 50 V ce= 3 V < E r o CL 40 g D o 30 o à (I) 5 o D. â  B , Sheet 2 5 10 20 Ic - Collector Current - mA 50 100 NEC 2SC5435 GAIN BANDW , Collector Current - mA N - Noise Figure - d F B MAXIMUM AVAILABLE GAIN/INSERTIO N 0.5 1 2 -
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