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LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
HFA3101Y Intersil Corporation TRANSISTOR 6 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal ri Buy

transistor NEC B 617

Catalog Datasheet Results Type PDF Document Tags
Abstract: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY , perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. , Please check with local NEC representative for availability and additional information. Document No. , 66.0 66.1 64.0 64.2 63.5 63.3 61.7 0.017 0.027 0.035 0.042 0.052 0.061 0.071 0.081 , E B 2.45±0.1 C E 0.1 0.8 MIN. 1.55 3.95±0.25 0.3 1.5±0.1 0.46 ±0.06 ... Original
datasheet

8 pages,
48.76 Kb

P1093 NEC 718 4435 power ic 2SC5336-T1 2SC5336 2SC3357 nec k 3115 transistor NEC B 617 2SC5336 abstract
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Abstract: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH , ) B 0.42 ±0.06 0.42 ±0.06 1.5 3.0 2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Symbol , B: Base Note 1. 0.7 mm - 16 cm double sided ceramic substrate (Copper plating) Parameter E , .260 140.4 1.986 61.7 .184 77.5 .535 - 61.3 5 2SC5336 2SC5336 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC ... Original
datasheet

6 pages,
48.9 Kb

2SC3357 audio amplifier IC 810 2SC5336 nec b 536 transistor NEC B 617 s-parameter RF POWER TRANSISTOR NPN 822 ic MAKING NPN transistor mhz s-parameter gh 312 NEC B 536 IC 4435 transistor NEC B 617 4435 power ic 2SC5336 abstract
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Abstract: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R , 25 °C) P aram eter Collector to B ase V oltage Collector to Em itter Voltage Em itter to B ase V , rr n Notel W °C °c PIN C O N N EC TIO N S E: Emitter C: Collector B: Base Tj Tstg Note , Japan © NEC Corporation 1996 NEC TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION , Collector Current - mA GAIN B A NDW IDTH PRODUCT vs. INSERTION GAIN .MAXIMUM GAIN vs. FREQUENCY - ... OCR Scan
datasheet

6 pages,
104.44 Kb

transistor NEC D 822 P P1093 NEC D 822 P NEC D 809 F transistor NEC B 617 NEC B 617 2SC5336 2SC5336 abstract
datasheet frame
Abstract: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5338 2SC5338 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY , perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. , Please check with local NEC representative for availability and additional information. Document No. , 113.6 103.3 96.7 92.0 89.2 86.9 84.3 82.7 81.8 80.4 77.2 67.5 64.6 63.4 61.7 60.9 60.3 , 89.3 86.7 84.9 84.0 82.6 79.5 69.9 67.0 66.2 64.7 64.1 62.6 61.7 60.7 0.037 0.057 ... Original
datasheet

8 pages,
52.83 Kb

iC 828 Transistor 2SC5338-T1 2SC5338 2SC4703 2SC5338 abstract
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Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 2SC4228 is a low supply voltage transistor designed , w h ich may appear in th is docum ent. NEC C orporation does not assum e any lia b ility fo r in , ile NEC C orporation has been making co n tin u o u s e ffo rt to e n h a n c e th e re lia b ility of , transistor has been applied super mini mold package. This is achieved by direct nitride passivated base ... OCR Scan
datasheet

8 pages,
134.61 Kb

transistor NEC D 587 r44 marking 2SC4228 transistor NEC B 617 2SC4228 abstract
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Abstract: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R , pT Notel T, Tstg PIN CONNECTIONS E: Emitter C: Collector B: Base Note 1 . 0.7 mm x 16 cm , Published April 1996 P Printed in Japan © NEC Corporation 1996 NEC ELECTRICAL CHARACTERISTICS (TA= , < < NEC TYPICAL CHARACTERISTICS (TA= 25 °C) lc - V ce 2SC5338 2SC5338 Characteristics lc- Collector , Current - mA - Collector to Base Voltage - V IM2 - lc Characteristics Distortion - d B IMa- lc ... OCR Scan
datasheet

10 pages,
139.92 Kb

transistor NEC D 587 transistor NEC B 617 nec hf 324 2SC5338 2SC5338 abstract
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Abstract: DATA SHEET SILICON TRANSISTOR 2SC3355 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 2SC3355 is an NPN silicon epitaxial transistor designed for low , NF = 1.1 dB TYP., Ga = 8.0 d B T Y P . @ V c e = 10 V, Ic = 7 mA, f = 1.0 GHz NF = 1.1 d B T Y P ., Ga = 9.0 d B T Y P . @ V ce = 10 V, lc = 40 mA, f = 1.0 GHz · High Power Gain MAG = 11 dB TYP. @ V ce , NDITION S 10 1.0 V , Ie = 0 0 20 mA 20 mA = Ie b o V eb = V , Ic = hFE 50 120 6.5 ... OCR Scan
datasheet

8 pages,
154.06 Kb

nec a 634 transistor NEC B 617 2sc3355 NEC D 822 P transistor NEC D 587 transistor NEC D 822 P 2SC3355 2SC3355 abstract
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Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES · · · · Small Package High Gain Bandwidth Product , 0.1 ^ 0- 15-o, * Please contact with responsible NEC person, if you require evaluation , V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T D -7 9 3 8 ) D ale P u b lish e d A u g u s i 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL CHARACTERISTICS (T a = 25 C ... OCR Scan
datasheet

8 pages,
154.41 Kb

transistor NEC B 617 3563 1231 2SC5015 2SC5015 abstract
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Abstract: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR , N CP(K) Printed in Japan © NEC Corporation 1998 NEC hFE CLASSIFICATION RANK Marking hFE EB , DISSIPATION 50 Vce= 3 V 5 £ < E 40 COLLECTOR CURRENT vs. DC BASE VOLTAGE 30 Q ¡5 5 CL o B O £ o O , 2 Preliminary Data Sheet NEC GAIN BANDWIDTH PRODUCT 2SC5435 2SC5435 INSERTION POWER GAIN fr - , /fNSERTlON N F - Noise Figure - d B 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 ... OCR Scan
datasheet

8 pages,
342.88 Kb

transistor NEC D 822 P TL 1701 transistor NEC B 617 NEC 2987 2SC5435 2SC5435 abstract
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Abstract: (K) Printed in Japan © NEC Corporation 1998 NEC RECOMMENDED OPERATING CONDITION (Ta = 2 5 , 10 Unit kA 2 V, Vos = 0 V b Id 20 -0.2 50 =2V 60 -0.7 65 0.8 0.4 90 -2.0 mA V mS , Data Sheet NEC PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 0.2 V NE4210M01 NE4210M01 0.153' , o 5 6 Preliminary Data Shee 3 NEC TYPICAL CHARACTERISTICS (T a = 25 °C) NE4210M01 NE4210M01 , Id -D rain Current - m A f - Frequency - GHz 4 Preliminary Data Sheet NEC Gain ... OCR Scan
datasheet

12 pages,
227.79 Kb

datasheet abstract
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.SUBCKT MJ15023 MJ15023 MJ15023 MJ15023 1 2 3 * TERMINALS: C B E * 200 Volt 16 Amp SiPNP Power Transistor 08-16-1995 1 2 3 * TERMINALS: C B E * Motorola 60 Volt 60 Amp SiPNP Power Transistor 08-02-1993 Q1 1 1 2 3 * TERMINALS: C B E * Motorola 140 Volt 20 Amp SiNPN Power Transistor 08-02-1993 Q1 * TERMINALS: C B E * 60 Volt 1.5 Amp SiPNP Power Transistor 11-11-1992 Q1 1 2 3 QPWR .67 Q2 1 4 3 BD135 BD135 BD135 BD135 1 2 3 * TERMINALS: C B E * 45 Volt 1.5 Amp SiNPN Power Transistor 11-11-1992 Q1 1 2
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Spice Models 18/04/2010 134.66 Kb LIB powbjt.lib
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are those which (a) are intended for surgical implant into the body, or (b) support or sustain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .154 6.1.7 Macros . . . . .260 9.2.3.3 The Timer B overflow interrupt service routine . . . . . . . . . . . . . . . . . . . . .
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STMicroelectronics 11/01/2000 559.16 Kb HTM 6623-v3.htm
or systems are those which (a) are intended for surgical implant into the body, or (b . . . . . . . . . . . . . . . . . . . . . . . .154 6.1.7 Macros . . . . . . . . . . . . . . . . . Timer B overflow interrupt service routine . . . . . . . . . . . . . . . . . . . . . . . . . .267 9.3
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STMicroelectronics 25/05/2000 559.12 Kb HTM 6623-v2.htm
or systems are those which (a) are intended for surgical implant into the body, or (b . . . . . . . . . . . . . . . . . . . . . . . .154 6.1.7 Macros . . . . . . . . . . . . . . . . . Timer B overflow interrupt service routine . . . . . . . . . . . . . . . . . . . . . . . . . .267 9.3
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STMicroelectronics 11/01/2000 559.16 Kb HTM 6623-v1.htm
into the body, or (b) support or sustain life, and whose failure to perform, when properly . . . . . . . . . . . .154 6.1.7 Macros . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .260 9.2.3.3 The Timer B overflow interrupt service routine . . . . .
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STMicroelectronics 20/10/2000 570.22 Kb HTM 6623.htm
No abstract text available
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Xilinx 07/09/1996 10340.01 Kb ZIP dbookold.zip
No abstract text available
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Hitachi 22/10/2000 92325.55 Kb ZIP gn99r1p1.zip
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