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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
HIP6601BECB-T Intersil Corporation 0.73A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8 visit Intersil

transistor Common Base configuration

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transistor Common Base configuration

Abstract: PH1214-8M * =s=-z-s .- z = -= = x5 r = an AMP company v2.00 Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-8M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization SystemInternal Input Impedance Matching Herrktic Metal/Ceramic Package Absolute Maximum Ratings at 25°C .i37z.P10 .304z.531 Storage Temperature Electrical
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transistor Common Base configuration

b 595 transistor

Abstract: Mallory Capacitor Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry , 73050255-24 BOARD CAPACITOR, CARRIER, 73050258-06 TRANSISTOR NDRYL 73050258-05 L BOARD CARRIER BRASS 73050258-03 BASE PLATE, ALUMINUM 73050258-04 Y TRANSISTOR CDPPER 73050258-01 , (1344) 300 020 Radar Pulsed Power Transistor, PH3135-5M SW v2.00 RF Test Fixture BNC
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b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5

transistor p8

Abstract: 52Z05 =_ rz an AMP comcww Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2226-11 OM 2.25 - 2.55 GHz v2.00 so3 Features l l l l l l l )_ NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package . T (22 95) ,553 _ I .175+ 015 :4 45z.33: Absolute Maximum Ratings at 25°C -:4 J571
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transistor p8 52Z05 f2224

13MM

Abstract: z-s?=`= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic` FleWCeramic Package Matching Absolute Maximum Ratinas at 25°C 1 Symbol I Parameter 1 Rating
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13MM

Rogers 6010.5

Abstract: 6010.5 -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input , Transistor, PH1214-20EL 2OW v2.00 RF Test Fixture "cc Q w ou TPUT IN&T 50 OHMS cu50
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PH1214-25M 6010.5 transistor j39

lc125

Abstract: Aß Features · · · · · · · · · Avionics Pulsed Power Transistor PH 1090-6S Preliminary 6 Watts, 1030-1090 MHz, 10 (is Pulse, 1% Duty Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter
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lc125 42ED5

transistor J17

Abstract: transistor j8 an AMP company Radar Pulsed Power Transistor, 25W, loops Pulse, 10% Duty PH2729-25M 2.7 - 2.9 GHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package , FIXTURE 1, OUTPUT CIRtUIT 5rJR / 2.90 - Radar Pulsed Power Transistor, 25W PH2729
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transistor J17 transistor j8 Z005 wacom 2052-5636-02

j78 transistor

Abstract: transistor j7 an AMP company Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic ~MetaUCeramic Package Absolute Maximum Ratings at , Pulsed Power Transistor, PH1214-3L 3W v2.00 RF Test Fixture OUTPUT 50 OHMS INPUT 50
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j78 transistor transistor j7 transistor 669 transistor j4 MICROWAVE TEST FIXTURE j4 transistor

transistor Common Base configuration

Abstract: capacitor 50 uf z-s?=`= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic , . +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, PH2931-135s 135W
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capacitor 50 uf PH2931-135

13MM

Abstract: PH3134-2OL Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal , Pulsed Power Transistor, 20W v2.00 RF Test Fixture BNC CONNECTOR 2451 PDULINA ELECT, PC , 2 PLACES -04 ! CHIP a;I ? L BASE PLATE, ALUMINUM 73050258~04 ATClOOA \-
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PH3134 transistor f20

7z transistor

Abstract: J401 ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M Features l l l l l l l ,900 (22.85) NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package 1w Absolute Maximum Ratings at 25°C 100 :2 3) EH!TTEQ 71 100 (2.54) -: -
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7z transistor J401

transistor power 5w

Abstract: Transistor 5503 an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package ' 820 (20.83> I 573 K.z.48) .3: d:1.271 1 , : I i I / . Absolute , Europe: Tel. +44 (1344) 869 595 Fax ~44 (1344) 300 020 PH2323-5 CW Power Transistor, 5W SMA
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transistor power 5w Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor C 1344

TRANSISTOR 618

Abstract: J22 transistor Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10us Pulse Width, 1% Duty Cycle Features · · · · · · · · Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High , Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10us , 17-06-2005 Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10us Pulse Width, 1% Duty Cycle
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TRANSISTOR 618 J22 transistor RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts

transistor c2383

Abstract: c2383 transistor an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features_-.- - =.* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic`MetalKeramic Package .820 C23 , . Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor
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PH1214-30EL transistor c2383 c2383 transistor C2383 NPN Transistor C2383

PH2731-20M

Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching , (1344) 869 595 Fax +44 (1344) 300 020 PI42731 -2OM Radar Pulsed Power Transistor, 2OW v2
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3 w RF POWER TRANSISTOR 2.7 ghz
Abstract: Afa Features · · · · · · · · Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Outline Drawing _ -650 -
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t 30 55el

Abstract: transistor 81 120 w 63 an AMP comDanv Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty PH1214-55EL 1.2 - 1.4 GHz v2.00 Features l l l l l l l l 903 (22 85) J NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic , Pulsed Power Transistor, 40W v2.00 RF Test Fixture "cc 0 00 II p-j;I / x/4 r
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PH1214-40M t 30 55el transistor 81 120 w 63 LL903 LL-903 transistor 81 120 w 55 ph1214-40

TRANSISTOR ZFW

Abstract: zfw 03 an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features ,930 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic ~tal/Ceramic Package , Transistor, 5W v2.00 RF Test Fixture BNC CONNECTOR &y?I&Y;`C PDMONA ELECT. 2451 CAPACITOR
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TRANSISTOR ZFW zfw 03 capacitor mallory ZFW TRANSISTOR transistor j18 transistor 5w TT50M50A7

transistor j6

Abstract: J122 transistor an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic`MetaUCeramic Package , . Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 PH2731-75L Radar Pulsed Power Transistor, 75W
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transistor j6 J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015

T-301-34

Abstract: Afa Features · · · · · · · · · Avionics Pulsed Power Transistor PH 1090-150S Preliminary 150 Watts, 1030-1090 MHz, 10 us Pulse, 1% Duty Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter
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T-301-34 4220S
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