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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.26 Price Each : $1.32
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transistor Common Base configuration

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: * =s=-z-s .- z = -= = x5 r = an AMP company v2.00 Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-8M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization SystemInternal Input Impedance Matching Herrktic Metal/Ceramic Package Absolute Maximum Ratings at 25°C .i37z.P10 .304z.531 Storage Temperature Electrical M/A-COM
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Abstract: Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry , 73050255-24 BOARD CAPACITOR, CARRIER, 73050258-06 TRANSISTOR NDRYL 73050258-05 L BOARD CARRIER BRASS 73050258-03 BASE PLATE, ALUMINUM 73050258-04 Y TRANSISTOR CDPPER 73050258-01 , (1344) 300 020 Radar Pulsed Power Transistor, PH3135-5M SW v2.00 RF Test Fixture BNC M/A-COM
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b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5
Abstract: =_ rz an AMP comcww Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2226-11 OM 2.25 - 2.55 GHz v2.00 so3 Features l l l l l l l )_ NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package . T (22 95) ,553 _ I .175+ 015 :4 45z.33: Absolute Maximum Ratings at 25°C -:4 J571 M/A-COM
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transistor p8 52Z05 f2224
Abstract: z-s?=`= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic` FleWCeramic Package Matching Absolute Maximum Ratinas at 25°C 1 Symbol I Parameter 1 Rating M/A-COM
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13MM
Abstract: -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input , Transistor, PH1214-20EL 2OW v2.00 RF Test Fixture "cc Q w ou TPUT IN&T 50 OHMS cu50 M/A-COM
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PH1214-25M 6010.5 transistor j39
Abstract: Aß Features · · · · · · · · · Avionics Pulsed Power Transistor PH 1090-6S Preliminary 6 Watts, 1030-1090 MHz, 10 (is Pulse, 1% Duty Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter -
OCR Scan
lc125 42ED5
Abstract: an AMP company Radar Pulsed Power Transistor, 25W, loops Pulse, 10% Duty PH2729-25M 2.7 - 2.9 GHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package , FIXTURE 1, OUTPUT CIRtUIT 5rJR / 2.90 - Radar Pulsed Power Transistor, 25W PH2729 M/A-COM
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transistor J17 transistor j8 2052-5636-02 wacom Z005
Abstract: an AMP company Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic ~MetaUCeramic Package Absolute Maximum Ratings at , Pulsed Power Transistor, PH1214-3L 3W v2.00 RF Test Fixture OUTPUT 50 OHMS INPUT 50 M/A-COM
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j78 transistor transistor j7 transistor 669 transistor j4 j4 transistor MICROWAVE TEST FIXTURE
Abstract: z-s?=`= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic , . +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, PH2931-135s 135W M/A-COM
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capacitor 50 uf PH2931-135
Abstract: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal , Pulsed Power Transistor, 20W v2.00 RF Test Fixture BNC CONNECTOR 2451 PDULINA ELECT, PC , 2 PLACES -04 ! CHIP a;I ? L BASE PLATE, ALUMINUM 73050258~04 ATClOOA \- M/A-COM
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PH3134 transistor f20
Abstract: ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M Features l l l l l l l ,900 (22.85) NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package 1w Absolute Maximum Ratings at 25°C 100 :2 3) EH!TTEQ 71 100 (2.54) -: - M/A-COM
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7z transistor J401
Abstract: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package ' 820 (20.83> I 573 K.z.48) .3: d:1.271 1 , : I i I / . Absolute , Europe: Tel. +44 (1344) 869 595 Fax ~44 (1344) 300 020 PH2323-5 CW Power Transistor, 5W SMA M/A-COM
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transistor power 5w Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor C 1344
Abstract: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10us Pulse Width, 1% Duty Cycle Features · · · · · · · · Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High , Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10us , 17-06-2005 Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10us Pulse Width, 1% Duty Cycle M/A-COM
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TRANSISTOR 618 J22 transistor RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Abstract: an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features_-.- - =.* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic`MetalKeramic Package .820 C23 , . Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor M/A-COM
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PH1214-30EL transistor c2383 c2383 transistor C2383 NPN Transistor C2383
Abstract: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching , (1344) 869 595 Fax +44 (1344) 300 020 PI42731 -2OM Radar Pulsed Power Transistor, 2OW v2 M/A-COM
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3 w RF POWER TRANSISTOR 2.7 ghz
Abstract: Afa Features · · · · · · · · Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Outline Drawing _ -650 -
OCR Scan
Abstract: an AMP comDanv Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty PH1214-55EL 1.2 - 1.4 GHz v2.00 Features l l l l l l l l 903 (22 85) J NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic , Pulsed Power Transistor, 40W v2.00 RF Test Fixture "cc 0 00 II p-j;I / x/4 r M/A-COM
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PH1214-40M t 30 55el transistor 81 120 w 63 LL903 LL-903 transistor 81 120 w 55 PJ 81
Abstract: an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features ,930 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic ~tal/Ceramic Package , Transistor, 5W v2.00 RF Test Fixture BNC CONNECTOR &y?I&Y;`C PDMONA ELECT. 2451 CAPACITOR M/A-COM
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TRANSISTOR ZFW zfw 03 capacitor mallory ZFW TRANSISTOR transistor j18 transistor 5w TT50M50A7
Abstract: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic`MetaUCeramic Package , . Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 PH2731-75L Radar Pulsed Power Transistor, 75W M/A-COM
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transistor j6 J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015
Abstract: Afa Features · · · · · · · · · Avionics Pulsed Power Transistor PH 1090-150S Preliminary 150 Watts, 1030-1090 MHz, 10 us Pulse, 1% Duty Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter -
OCR Scan
T-301-34 4220S
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