NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: * =s=-z-s .- z = -= = x5 r = an AMP company v2.00 Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-8M PH1214-8M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization SystemInternal Input Impedance Matching Herrktic Metal/Ceramic Package Absolute Maximum Ratings at 25°C .i37z.P10 .304z.531 Storage Temperature Electrical ... | Original |
1 pages, |
PH1214-8M transistor Common Base configuration PH1214-8M abstract |
|
|||
| Abstract: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package ' 820 (20.83> I 573 K.z.48) .3: d:1.271 1 , : I i I / . Absolute , Europe: Tel. +44 (1344) 869 595 Fax ~44 (1344) 300 020 PH2323-5 PH2323-5 CW Power Transistor, 5W SMA ... | Original |
2 pages, |
power transistor PH2323-5 1271 transistor J17 j170 2052-5636-02 transistor Common Base configuration Transistor 5503 transistor power 5w datasheet abstract |
|
|||
| Abstract: ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M PH2226-50M Features l l l l l l l ,900 (22.85) NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package 1w Absolute Maximum Ratings at 25°C 100 :2 3) EH!TTEQ 71 100 (2.54) -: - ... | Original |
1 pages, |
PH2226-50M PH2226-50M abstract |
|
|||
| Abstract: z-s?=`= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic` FleWCeramic Package Matching Absolute Maximum Ratinas at 25°C 1 Symbol I Parameter 1 Rating ... | Original |
1 pages, |
13MM datasheet abstract |
|
|||
| Abstract: Transistor, 5W, loops Pulse, 10% Duty PH31355M PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry , 73050255-24 BOARD CAPACITOR, CARRIER, 73050258-06 TRANSISTOR NDRYL 73050258-05 L BOARD CARRIER BRASS 73050258-03 BASE PLATE, ALUMINUM 73050258-04 Y TRANSISTOR CDPPER 73050258-01 , (1344) 300 020 Radar Pulsed Power Transistor, PH3135-5M PH3135-5M SW v2.00 RF Test Fixture BNC ... | Original |
2 pages, |
PH3135-5M electrolytic Mallory Capacitor transistor 15j30 J3 transistor transistor b 595 Mallory Capacitor b 595 transistor datasheet abstract |
|
|||
| Abstract: -= -=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting , Radar Pulsed Power Transistor, PH3134-30s 30W v2.00 RF Test Fixture BNC CONNECTOR PDMONA , HEATSINK, ALUMINUM 73050255-24 L BASE PLATE, ALWIMJM 73050258-04 ;mR; \ 73050258-03 ... | Original |
2 pages, |
Mallory Capacitor datasheet abstract |
|
|||
| Abstract: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors , ) 300 020 PH3134-9L PH3134-9L Radar Pulsed Power Transistor, 9W v2.00 RF Test Fixture BNC f";PA , 2052-5636-02 2 PLACES - CHIP CAPACIT `DR 73050255-24 y BASE PLATE, ALUHINUH 73056258-04 I, 1 ... | Original |
2 pages, |
PH3134-9L J37 transistor transistor j8 datasheet abstract |
|
|||
| Abstract: -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input , Radar Pulsed Power Transistor, PH1214-20EL PH1214-20EL 2OW v2.00 RF Test Fixture "cc Q w ou TPUT ... | Original |
2 pages, |
PH1214-25M PH1214-20EL 6010.5 Rogers 6010.5 datasheet abstract |
|
|||
| Abstract: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic`MetaUCeramic Package , Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 PH2731-75L PH2731-75L Radar Pulsed Power Transistor, 75W ... | Original |
2 pages, |
PH2731-75L J122 transistor j122 J122 transistor transistor j6 J6 transistor datasheet abstract |
|
|||
| Abstract: z-s?=`= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic` , +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, PH2931-135s 135W ... | Original |
2 pages, |
transistor Common Base configuration 13MM datasheet abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| 0912B251Y 0912B251Y 0912B251Y 0912B251Y; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and easier design of circuits. Applications Intended for use in common base class C broadband 0912B251Y 0912B251Y 0912B251Y 0912B251Y NPN microwave power transistor 19-2-1997 Product Specification 12 www.datasheetarchive.com/files/philips/pip/mx0912b251y_2-v2.html |
Philips | 06/06/2005 | 4.14 Kb | HTML | mx0912b251y_2-v2.html |
| designs. The MZ0912B100Y MZ0912B100Y MZ0912B100Y MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C. Features MX0912B100Y MX0912B100Y MX0912B100Y MX0912B100Y; MZ0912B100Y MZ0912B100Y MZ0912B100Y MZ0912B100Y; NPN microwave power transistors General info NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y MX0912B100Y MX0912B100Y MX0912B100Y has a SOT Input and output matching cell allows an easier design of circuits. Applications Common www.datasheetarchive.com/files/philips/pip/mx_mz0912b100y_2-v2.html |
Philips | 06/06/2005 | 4.37 Kb | HTML | mx_mz0912b100y_2-v2.html |
| 0912B351Y 0912B351Y 0912B351Y 0912B351Y; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and easier design of circuits. Columns Applications Intended for use in common base class C MX0912B351Y MX0912B351Y MX0912B351Y MX0912B351Y NPN microwave power transistor 19-2-1997 Product Specification 12 www.datasheetarchive.com/files/philips/pip/mx0912b351y_2-v2.html |
Philips | 06/06/2005 | 4.15 Kb | HTML | mx0912b351y_2-v2.html |
| 0912B50Y 0912B50Y 0912B50Y 0912B50Y; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and cell allows an easier design of circuits. Applications Common base, class C, broadband MZ0912B50Y MZ0912B50Y MZ0912B50Y MZ0912B50Y NPN microwave power transistor 18-2-1997 Product Specification 12 www.datasheetarchive.com/files/philips/pip/mz0912b50y_2-v2.html |
Philips | 06/06/2005 | 4.14 Kb | HTML | mz0912b50y_2-v2.html |
| microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. Features Interdigitated structure provides high emitter matching cell allows an easier design of circuits. Applications Common base, class C, broadband 0912B50Y 0912B50Y 0912B50Y 0912B50Y NPN microwave power transistor 18-feb-97 Product Specification 12 75 www.datasheetarchive.com/files/philips/pip/mz0912b50y_2.html |
Philips | 23/04/2003 | 2.88 Kb | HTML | mz0912b50y_2.html |
| microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C. Features Interdigitated structure; high emitter efficiency allows an easier design of circuits. Applications Intended for use in common base class C MX0912B251Y MX0912B251Y MX0912B251Y MX0912B251Y NPN microwave power transistor 19-feb-97 Product Specification 12 www.datasheetarchive.com/files/philips/pip/mx0912b251y_2.html |
Philips | 23/04/2003 | 2.89 Kb | HTML | mx0912b251y_2.html |
| microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C. Features Interdigitated structure; high emitter efficiency allows an easier design of circuits. Columns Applications Intended for use in common base class MX0912B351Y MX0912B351Y MX0912B351Y MX0912B351Y NPN microwave power transistor 19-feb-97 Product Specification 12 www.datasheetarchive.com/files/philips/pip/mx0912b351y_2.html |
Philips | 23/04/2003 | 2.9 Kb | HTML | mx0912b351y_2.html |
| front-ends in common base configuration. Datasheet Typenumber Title ; PNP medium frequency transistor General info PNP medium frequency transistor in a TO-92; SOT54 plastic package. Features frequency transistor 5-11-2004 Product Specification 6.0 51.6 Products and Chemical content Support Spice model of BF324 BF324 BF324 BF324 Letter Symbols - Transistors General (1999 www.datasheetarchive.com/files/philips/pip/bf324_3.html |
Philips | 15/06/2005 | 3.68 Kb | HTML | bf324_3.html |
| front-ends in common base configuration. Datasheet Typenumber Title BF324 BF324 BF324 BF324_CNV_2 Product information page BF324 BF324 BF324 BF324; PNP medium frequency transistor General info PNP medium frequency transistor in a TO-92; SOT54 plastic package frequency transistor 07-jul-97 Product Specification 8 48.4 Products and - Transistors General (01-mei-99) WWW View the PIP online www.datasheetarchive.com/files/philips/pip/bf324_cnv_2.html |
Philips | 23/04/2003 | 3.2 Kb | HTML | bf324_cnv_2.html |
| package with the base connected to the flange. It is mounted in common base configuration and specified . Applications Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN 0912B100Y 0912B100Y 0912B100Y 0912B100Y; NPN microwave power transistors General info NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y MX0912B100Y MX0912B100Y MX0912B100Y has a SOT439A metal ceramic flange package and improved output POWER Transistor 10 45 960 - 1215 115 50 SOT439A 7.5 10 MZ0912B100Y MZ0912B100Y MZ0912B100Y MZ0912B100Y Avionics www.datasheetarchive.com/files/philips/pip/mx_mz0912b100y_2.html |
Philips | 23/04/2003 | 4.35 Kb | HTML | mx_mz0912b100y_2.html |