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transistor Common Base configuration

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Abstract: * =s=-z-s .- z = -= = x5 r = an AMP company v2.00 Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-8M PH1214-8M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization SystemInternal Input Impedance Matching Herrktic Metal/Ceramic Package Absolute Maximum Ratings at 25°C .i37z.P10 .304z.531 Storage Temperature Electrical ... Original
datasheet

1 pages,
78.08 Kb

PH1214-8M transistor Common Base configuration PH1214-8M abstract
datasheet frame
Abstract: an AMP company Radar Pulsed Power Transistor, 25W, loops Pulse, 10% Duty PH2729-25M PH2729-25M 2.7 - 2.9 GHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package , FIXTURE 1, OUTPUT CIRtUIT 5rJR / 2.90 - Radar Pulsed Power Transistor, 25W PH2729-25M PH2729-25M ... Original
datasheet

2 pages,
148.76 Kb

wacom 2052-5636-02 transistor J17 transistor j8 PH2729-25M PH2729-25M abstract
datasheet frame
Abstract: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package ' 820 (20.83> I 573 K.z.48) .3: d:1.271 1 , : I i I / . Absolute , Europe: Tel. +44 (1344) 869 595 Fax ~44 (1344) 300 020 PH2323-5 PH2323-5 CW Power Transistor, 5W SMA ... Original
datasheet

2 pages,
135.17 Kb

1271 5w transistor microwave transistor 03 transistor C 1344 PH2323-5 power transistor SILICON npn POWER TRANSISTOR c 869 transistor 1271 transistor J17 transistor Common Base configuration j170 2052-5636-02 Transistor 5503 datasheet abstract
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Abstract: z-s?=`= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic` FleWCeramic Package Matching Absolute Maximum Ratinas at 25°C 1 Symbol I Parameter 1 Rating ... Original
datasheet

1 pages,
85.16 Kb

13MM datasheet abstract
datasheet frame
Abstract: ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M PH2226-50M Features l l l l l l l ,900 (22.85) NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package 1w Absolute Maximum Ratings at 25°C 100 :2 3) EH!TTEQ 71 100 (2.54) -: - ... Original
datasheet

1 pages,
89.2 Kb

PH2226-50M PH2226-50M abstract
datasheet frame
Abstract: Transistor, 5W, loops Pulse, 10% Duty PH31355M PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry , 73050255-24 BOARD CAPACITOR, CARRIER, 73050258-06 TRANSISTOR NDRYL 73050258-05 L BOARD CARRIER BRASS 73050258-03 BASE PLATE, ALUMINUM 73050258-04 Y TRANSISTOR CDPPER 73050258-01 , (1344) 300 020 Radar Pulsed Power Transistor, PH3135-5M PH3135-5M SW v2.00 RF Test Fixture BNC ... Original
datasheet

2 pages,
145.25 Kb

PH3135-5M electrolytic Mallory Capacitor transistor 15j30 J3 transistor transistor b 595 Mallory Capacitor b 595 transistor datasheet abstract
datasheet frame
Abstract: -= -=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting , Radar Pulsed Power Transistor, PH3134-30s 30W v2.00 RF Test Fixture BNC CONNECTOR PDMONA , HEATSINK, ALUMINUM 73050255-24 L BASE PLATE, ALWIMJM 73050258-04 ;mR; \ 73050258-03 ... Original
datasheet

2 pages,
142.91 Kb

Mallory Capacitor datasheet abstract
datasheet frame
Abstract: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors , ) 300 020 PH3134-9L PH3134-9L Radar Pulsed Power Transistor, 9W v2.00 RF Test Fixture BNC f";PA , 2052-5636-02 2 PLACES - CHIP CAPACIT `DR 73050255-24 y BASE PLATE, ALUHINUH 73056258-04 I, 1 ... Original
datasheet

2 pages,
131.6 Kb

transistor j145 PH3134-9L J370 capacitor J37 J37 transistor transistor j37 transistor j8 datasheet abstract
datasheet frame
Abstract: an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M PH2731-5M 2.7 - 3.1 GHz v2.00 Features ,930 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic ~tal/Ceramic Package , : inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 PH2731-5M PH2731-5M Radar Pulsed Power Transistor ... Original
datasheet

2 pages,
146.72 Kb

CAPACITOR 653 TT50M50A transistor power 5w PH2731-5M tal 9-30 transistor 335 transistor 5w transistor j18 capacitor mallory zfw 03 PH2731-5M abstract
datasheet frame
Abstract: 3 .- an AMP comDanv CW Power Transistor, 2.3 GHz 1W PH2323-1 PH2323-1 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package , I .lOCZ31C :2.s4.25, !t Absolute Maximum Ratings at 25°C 1 , (7 344) 300 020 PH2323-1 PH2323-1 CW Power Transistor, 1W v2.00 RF Test Fixture 34N4UA 34N4UA JACKS 2 ... Original
datasheet

2 pages,
140.55 Kb

transistor Common Base configuration PH2323-1 EL84 b 595 transistor 2S425 datasheet abstract
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NPN microwave power transistor NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C. Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN MX0912B351Y MX0912B351Y MX0912B351Y MX0912B351Y NPN microwave power transistor 19-Feb-97 Product Specification 12
www.datasheetarchive.com/files/philips/pip/mx0912b351y_2-v3.html
Philips 05/12/2000 7.01 Kb HTML mx0912b351y_2-v3.html
NPN microwave power transistor NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application. MZ0912B50Y MZ0912B50Y MZ0912B50Y MZ0912B50Y NPN microwave power transistor 18-Feb-97 Product Specification 12
www.datasheetarchive.com/files/philips/pip/mz0912b50y_2-v3.html
Philips 05/12/2000 7.13 Kb HTML mz0912b50y_2-v3.html
NPN microwave power transistor NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C. Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN MX0912B251Y MX0912B251Y MX0912B251Y MX0912B251Y NPN microwave power transistor 19-Feb-97 Product Specification 12
www.datasheetarchive.com/files/philips/pip/mx0912b251y_2-v3.html
Philips 05/12/2000 7 Kb HTML mx0912b251y_2-v3.html
Product information page MZ0912B50Y MZ0912B50Y MZ0912B50Y MZ0912B50Y; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and allows an easier design of circuits. Applications Common base, class C, broadband, pulse power microwave power transistor 18-feb-97 Product Specification 12 75.4 Products
www.datasheetarchive.com/files/philips/pip/mz0912b50y_2.html
Philips 23/04/2003 2.88 Kb HTML mz0912b50y_2.html
microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and easier design of circuits. Applications Intended for use in common base class C broadband MX0912B251Y MX0912B251Y MX0912B251Y MX0912B251Y NPN microwave power transistor 19-2-1997 Product Specification 12.0 77.0
www.datasheetarchive.com/files/philips/pip/mx0912b251y_2-v2.html
Philips 06/06/2005 4.14 Kb HTML mx0912b251y_2-v2.html
NPN microwave power transistor NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application. ) MZ0912B50Y MZ0912B50Y MZ0912B50Y MZ0912B50Y NPN microwave power transistor 18-Feb-97 Product Specification 12
www.datasheetarchive.com/files/philips/pip/mz0912b50y_2-v1.html
Philips 14/02/2002 8.79 Kb HTML mz0912b50y_2-v1.html
Product information page MX0912B251Y MX0912B251Y MX0912B251Y MX0912B251Y; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and circuits. Applications Intended for use in common base class C broadband pulse power amplifier from power transistor 19-feb-97 Product Specification 12 77.0 Products and
www.datasheetarchive.com/files/philips/pip/mx0912b251y_2.html
Philips 23/04/2003 2.89 Kb HTML mx0912b251y_2.html
microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and easier design of circuits. Columns Applications Intended for use in common base class C MX0912B351Y MX0912B351Y MX0912B351Y MX0912B351Y NPN microwave power transistor 19-2-1997 Product Specification 12.0 76.5
www.datasheetarchive.com/files/philips/pip/mx0912b351y_2-v2.html
Philips 06/06/2005 4.15 Kb HTML mx0912b351y_2-v2.html
Product information page MX0912B351Y MX0912B351Y MX0912B351Y MX0912B351Y; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and circuits. Columns Applications Intended for use in common base class C broadband pulse power microwave power transistor 19-feb-97 Product Specification 12 76.5 Products
www.datasheetarchive.com/files/philips/pip/mx0912b351y_2.html
Philips 23/04/2003 2.9 Kb HTML mx0912b351y_2.html
NPN microwave power transistor NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C. Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN ) MX0912B351Y MX0912B351Y MX0912B351Y MX0912B351Y NPN microwave power transistor 19-Feb-97 Product Specification 12
www.datasheetarchive.com/files/philips/pip/mx0912b351y_2-v1.html
Philips 14/02/2002 8.41 Kb HTML mx0912b351y_2-v1.html