500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
BCV26_L99Z Fairchild Semiconductor Corporation PNP Darlington Transistor ri Buy
KSA1156OSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy
KSA1156YSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy

transistor Common Base configuration

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: In the common emitter configuration, the transistor collector-base capacitance Ccb is the feedback , transistor Q2, 2N4402 2N4402, placed as a common base amplifier, with the load connected to the collector of the , with Common Base Configuration Page 3 AN3009 AN3009 This configuration leads to overall improvement , phototransistor does not see the load resistor RL, only the input resistance of the common base transistor Q2 , = 25C. RL Q1 If VOUT 100 Figure 4: Additonal Transistor with Common Base ... California Eastern Laboratories
Original
datasheet

8 pages,
1846.97 Kb

2N4402 Common emitter amplifier NPN transistor 2n4400 2N4400 Optocouplers 205 phototransistor output 331 transistor 2n4400 transistor Common Base amplifier optocoupler pnp PS2501-1-A NPN/transistor NEC K 2500 digital optocoupler 4pin isolation AN3009 Transistor 2N4402 AN3009 Common collector configuration basic AN3009 314 optocoupler AN3009 transistor 9427 AN3009 AN3009 AN3009 transistor Comparison Tables pnp phototransistor TEXT
datasheet frame
Abstract: conductance gib Input conductance in common ­base configuration, short circuit at output gib= Re (y ib , common ­base configuration, short circuit at input gob= Re (y ob) goe Output conductance in common , current transfer ratio in common emitter configuration CCBO Capacitance between collector and base , forward transfer admittance in common ­base configuration (small signal value) |yfs| Short­circuit , : GP Power gain hFE DC forward current transfer ratio in common emitter configuration ZS Source ... Vishay Semiconductors
Original
datasheet

8 pages,
44.46 Kb

rs gp germanium diode NF50 Common collector configuration basic diode tunnel TEXT
datasheet frame
Abstract: conductance in common ­base configuration, short circuit at output gib= Re (y ib) gie Input , configuration, short circuit at input gob= Re (y ob) goe Output conductance in common ­base configuration , common emitter configuration CCBO Capacitance between collector and base with open emitter hfe Short circuit forward current transfer ratio in common emitter configuration Ceb IB DC base , current transfer ratio in common emitter configuration Source impedance Transition frequency 3 ... Vishay Intertechnology
Original
datasheet

8 pages,
53.7 Kb

yr yf transistor photo thyristor oscillator tunnel diode NF50 transistor Common emitter configuration Common collector configuration basic TEXT
datasheet frame
Abstract: base configuration c = common collector configuration Examples: (common base configuration) I1 = , ratio Anode Static current gain in common base configuration Dynamic short-circuit current gain in common base configuration A A b b11 b12 b21 b22 B, b C, c C Cb'c Cb'e Cc Ccase , short-circuit small signal current gain in common base configuration Cutoff frequency of the short-circuit , Power gain in common base configuration Power gain in common emitter configuration Power gain, optimum ... Infineon Technologies
Original
datasheet

24 pages,
375.56 Kb

ujt transistor transistor SMD b22 germanium varactor diode optocoupler H11B transistor SMD Z2 transistor ic equivalent book Y11 smd code SMD Transistor g22 smd code book transistors applications of ujt smd code book z1 SMD H21 "tunnel diode" oscillator SMD Transistor Y22 smd transistors code book Y22 transistor smd SMD transistor y11 g21 SMD Transistor transistor Common Base configuration SMD Transistor Y12 TEXT
datasheet frame
Abstract: omitted e = common emitter configuration b = common base configuration c = common collector configuration Examples: (common base configuration) I1 = y11b × V1b + y12b × V1b I2 = y21b × V1b + y22b × , a A A On-off base current ratio Anode Static current gain in common base configuration Dynamic short-circuit current gain in common base configuration b b11 b12 b22 B, b Imaginary , current gain in common base configuration Cutoff frequency of the short-circuit small signal current gain ... Siemens
Original
datasheet

23 pages,
367.33 Kb

y22c g21 SMD Transistor NF50 SMD Transistor g22 Technical Explanations power transistor tunnel diode y-parameter SMD transistor y11 Y22 transistor smd "tunnel diode" oscillator SMD Transistor Y12 UJT APPLICATION TEXT
datasheet frame
Abstract: second subscript may be omitted. e = common emitter configuration b = common base configuration c = common collector configuration Examples: (common base configuration) ^1 = > 11b x ^ 1b + y i 2b x h , Static current gain in common base configuration Dynamic short-circuit current gain in common base , common base configuration Cutoff frequency of the short-circuit small signal current gain in common , gain) Gain control range Power gain Power gain in common base configuration Power gain in common ... OCR Scan
datasheet

24 pages,
594.34 Kb

smd diode code 1B2 smd transistor A11b TEXT
datasheet frame
Abstract: omitted e = common emitter configuration b = common base configuration c = common collector configuration Examples: (common base configuration) I1 = y11b × V1b + y12b × V1b I2 = y21b × V1b + y22b × , On-off base current ratio Anode A Static current gain in common base configuration Dynamic short-circuit current gain in common base configuration b b11 b12 Imaginary part of y-parameters , small signal current gain in common base configuration Cutoff frequency of the short-circuit small ... Siemens
Original
datasheet

24 pages,
501.88 Kb

Z2E diode diode varactor B11 g21 SMD Transistor NF50 Technical Explanations power transistor tunnel diode SMD Transistor Y12 "tunnel diode" oscillator "Step Recovery Diode" germanium diode smd TEXT
datasheet frame
Abstract: omitted. e = common emitter configuration b = common base configuration c = common collector configuration Examples: (common base configuration) I1 = y11b × V1b + y12b × V1b I2 = y21b × V1b + y22b × V2b , of the Symbols Used On-off base current ratio Anode Static current gain in common base configuration Dynamic short-circuit current gain in common base configuration Imaginary part of y-parameters Imaginary , frequency Cutoff frequency of the short-circuit small signal current gain in common base configuration ... Infineon Technologies
Original
datasheet

24 pages,
215.35 Kb

applications of ujt Common collector configuration basic EHA07107 GaAs tunnel diode optocoupler H11B smd y12 SMD transistor BC RN SMD Transistor Y12 g21 SMD Transistor SMD transistor y11 transistor smd bc rn TEXT
datasheet frame
Abstract: emitter configuration b = common base configuration c = common collector configuration Examples: (common base configuration) h =>,11bx '/ 1b + >,12bx ^1b h = )'21b x y-lb + y22b x ^2b If the transistor is , current ratio Anode Static current gain in common base configuration Dynamic short-circuit current gain in common base configuration Imaginary part of y-parameters Imaginary part of the short-circuit input , damping) Power gain in common base configuration, optimum Power gain in common emitter configuration ... OCR Scan
datasheet

23 pages,
651.41 Kb

transistor smd AFE SIEMENS thyristor TEXT
datasheet frame
Abstract: single transistor coupler. This "photo diode" configuration can be schematically considered as the diode , time of a 4 pin standard coupler is to refrain from driving the base junction region of the transistor , optocoupler with the output in the common emitter or inverting configuration. There is a small delay between , the user access to the base of the phototransistor and allows us to modify the standard common , the common emitter amplifier configuration, the Miller capacitance formula becomes CM = CBC(1 ... Vishay Semiconductors
Original
datasheet

10 pages,
148.71 Kb

2N3904 npn bjt transistor spice model bjt ce amplifier darlington opto coupler Drive Base BJT OPTOCOUPLER 4-PIN application note working of darlington photo transistor optocoupler pnp theory phototransistor 2N3904 npn bjt transistor common emitter bjt optocoupler spice optocoupler basics power BJT PNP spice model optocoupler spice model bjt ce amplifier application BJT 2n3904 pnp phototransistor optocoupler, spice model, resistor phototransistor spice model TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in easier design of circuits. Applications Intended for use in common base class C broadband microwave power transistor 19-2-1997 Product Specification 12.0 77.0 Products and packages
/datasheets/files/philips/pip/mx0912b251y_2-v2.html
Philips 06/06/2005 4.14 Kb HTML mx0912b251y_2-v2.html
MX0912B351Y MX0912B351Y     NPN microwave power transistor NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C. Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN ) MX0912B351Y MX0912B351Y NPN microwave power transistor 19-Feb-97 Product Specification 12 76.5
/datasheets/files/philips/pip/mx0912b351y_2-v1.html
Philips 14/02/2002 8.41 Kb HTML mx0912b351y_2-v1.html
; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C. Features Interdigitated structure; high emitter matching cell allows an easier design of circuits. Applications Intended for use in common base NPN microwave power transistor 19-feb-97 Product Specification 12 77.0 Products and
/datasheets/files/philips/pip/mx0912b251y_2.html
Philips 23/04/2003 2.89 Kb HTML mx0912b251y_2.html
; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in easier design of circuits. Columns Applications Intended for use in common base class C microwave power transistor 19-2-1997 Product Specification 12.0 76.5 Products and packages
/datasheets/files/philips/pip/mx0912b351y_2-v2.html
Philips 06/06/2005 4.15 Kb HTML mx0912b351y_2-v2.html
; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and cell allows an easier design of circuits. Applications Common base, class C, broadband microwave power transistor 18-2-1997 Product Specification 12.0 75.4 Products and packages
/datasheets/files/philips/pip/mz0912b50y_2-v2.html
Philips 06/06/2005 4.14 Kb HTML mz0912b50y_2-v2.html
MX0912B251Y MX0912B251Y     NPN microwave power transistor NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C. Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN ) MX0912B251Y MX0912B251Y NPN microwave power transistor 19-Feb-97 Product Specification 12 77.0
/datasheets/files/philips/pip/mx0912b251y_2-v1.html
Philips 14/02/2002 8.4 Kb HTML mx0912b251y_2-v1.html
; NPN microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C. Features Interdigitated structure; high emitter common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application. MX0912B351Y MX0912B351Y NPN microwave power transistor 19-feb-97 Product Specification 12 76.5 Products
/datasheets/files/philips/pip/mx0912b351y_2.html
Philips 23/04/2003 2.9 Kb HTML mx0912b351y_2.html
microwave power transistor General info NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. Features Interdigitated structure provides high emitter matching cell allows an easier design of circuits. Applications Common base, class C, broadband transistor 18-feb-97 Product Specification 12 75.4 Products and packages Typenumber
/datasheets/files/philips/pip/mz0912b50y_2.html
Philips 23/04/2003 2.88 Kb HTML mz0912b50y_2.html
MZ0912B50Y MZ0912B50Y     NPN microwave power transistor NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application. microwave power transistor 18-Feb-97 Product Specification 12 75.4 View the
/datasheets/files/philips/pip/mz0912b50y_2-v1.html
Philips 14/02/2002 8.79 Kb HTML mz0912b50y_2-v1.html
transistor, Q 3 , emitter base voltage and the combined threshold voltages of the HEXFET Power MOSFETs, Q 6 , operate in source follower configuration. This offers a twofold advantage; a) the possibility circuit, C 4 , R 8 , R 9 also allows the driver transistor, Q 4 , to operate at near allows symmetry to be maintained under overload conditions. Transistor Q 3 and resistors R aircored Table 1. Components List The class A driver transistor, Q
/datasheets/files/international-rectifier/docs/wcd0000c/wcd00c22.htm
International Rectifier 06/10/1998 17.99 Kb HTM wcd00c22.htm