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Part Manufacturer Description Datasheet BUY
CC1000 Texas Instruments TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO28, 4.40 MM, TSSOP-28 visit Texas Instruments
CC1000/T&R Texas Instruments TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO28, 4.40 MM, TSSOP-28 visit Texas Instruments
SN75FC1000BPHD Texas Instruments SPECIALTY TELECOM CIRCUIT, PQFP64, THERMALLY ENHANCED, PLASTIC, QFP-64 visit Texas Instruments
CC1000YZ Texas Instruments TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PBGA28, ROHS COMPLIANT, UCSP-28 visit Texas Instruments
SN75FC1000PHD Texas Instruments 1-Gigabyte Per Second Fibre Channel Transceiver 64-HTQFP visit Texas Instruments
CC1000_UCSP/T&R Texas Instruments TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PBGA28, LEAD FREE, BGA-28 visit Texas Instruments

transistor C1000 USA

Catalog Datasheet MFG & Type PDF Document Tags

transistor C1000 USA

Abstract: Transistor D2025 semiconductor is an inex pensive low-noise silicon bipolar transistor in the SOT-143 surface-mountable package. For buffers, one version uses an HP AT-42086 medium-power bipolar transistor and the other uses an HP , network XR , in series with the base of the transistor and ground. This configuration offers a simple , connected between the transistor emitter and collector. The actual capacitance value will determine the , -port network Initially, the oscillator was analyzed as a 1-port network (Figure 3). The transistor, used in a
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AN-S014 MSA-1104 transistor C1000 USA Transistor D2025 hp_ at41411 transistor rf cm 1104 MSA1104 AVANTEK AT-41411 BB405B MSA-1105 AT-41411/AT-42086

TDA4601

Abstract: BY258 OF SWITCHING TRANSISTOR COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REVERSE-GOING LINEAR , is a monolithic integrated circuit desi-gned to regulate and control the switching transistor in a , 4.7nF B250/ C1000 18 17 16 15 14 13 12 11 10 2.7 TDA4601 1N4007 , , and protects the switching transistor in reverse converter power supplies at starting, normal, and , the supply to the coupling electrolytic capacitor and the switching transistor. Up to a supply
STMicroelectronics
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TDA4601B BY258 tda 2032 BY258/200 BY295 i c tda 4601 voltage DIP18PW PMDIP18W

TDA4601

Abstract: BY295 OF SWITCHING TRANSISTOR COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REVERSE-GOING LINEAR , is a monolithic integrated circuit desi-gned to regulate and control the switching transistor in a , 4.7nF B250/ C1000 18 17 16 15 14 13 12 11 10 2.7 TDA4601 1N4007 , , and protects the switching transistor in reverse converter power supplies at starting, normal, and , the supply to the coupling electrolytic capacitor and the switching transistor. Up to a supply
STMicroelectronics
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TDA 4601 C2540 4601 1N4003 BY295-450 TDA4601 application note

transistor c 5936 circuit diagram

Abstract: 18 sot-363 rf power amplifier Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note , silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a single , 2 transistors. One transistor is operating in a common emitter configuration followed by a second transistor operating in the common base configuration. When properly designed this configuration has the , Figure 1. The first transistor connected as a common emitter has its emitter hard grounded for both
Hewlett-Packard
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transistor c 5936 circuit diagram 18 sot-363 rf power amplifier c 2073 amplifier circuit diagram D2030 S2PB SC-70 5966-0781E

34C86

Abstract: MAX3094E C1000-4-2 Air-Gap Discharge ±15 IE C1000-4-2 Contact Discharge ESD Protection (Note 2) V , recommended. 10 Chip Information TRANSISTOR COUNT: 676 , Printed USA is a registered trademark of Maxim Integrated Products. MAX3093E/MAX3094E Package
Maxim Integrated Products
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MAX3093E MAX3094E 34C86 MAX3093ECPE MAX3093ECSE MAX3093ECUE RS-422/RS-485 AX3094E MS012
Abstract: Body Model 2 ±15 IE C1000-4-2 Air-Gap Discharge ±15 IE C1000-4-2 Contact Discharge , recommended. 10 Chip Information TRANSISTOR COUNT: 676 , Printed USA is a registered trademark of Maxim Integrated Products. MAX3093E/MAX3094E Package Maxim Integrated Products
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MAX3094E

Abstract: VCC, output enabled -7V VCM 12V No load, output enabled Output disabled Human Body Model IE C1000-4-2 Air-Gap Discharge IE C1000-4-2 Contact Discharge ±7 48 2.4 0.001 ±15 ±15 ±8 kV 3.5 10 VCC - 1.5 0.4 ±1 ±75 , TRANSISTOR COUNT: 676 10 , 94086 408-737-7600 © 2001 Maxim Integrated Products Printed USA is a registered trademark of Maxim
Maxim Integrated Products
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RS-485

transistor C1000 USA

Abstract: 34C86 C1000-4-2 Air-Gap Discharge ±15 IE C1000-4-2 Contact Discharge ESD Protection (Note 2) V , recommended. 10 Chip Information TRANSISTOR COUNT: 676 , Products Printed USA is a registered trademark of Maxim Integrated Products. Maxim Integrated
Maxim Integrated Products
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MAX3094EEUE MAX3093EESE MAX3093EEUE transistor C1000 Y MAX3093E/MA
Abstract: VCC, output enabled -7V VCM 12V No load, output enabled Output disabled Human Body Model IE C1000-4-2 Air-Gap Discharge IE C1000-4-2 Contact Discharge ±7 48 2.4 0.001 ±15 ±15 ±8 kV 3.5 10 VCC - 1.5 0.4 ±1 ±75 , TRANSISTOR COUNT: 676 10 , 94086 408-737-7600 © 2001 Maxim Integrated Products Printed USA is a registered trademark of Maxim Maxim Integrated Products
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34C86

Abstract: MAX3093E IE C1000-4-2 Air-Gap Discharge ±15 IE C1000-4-2 Contact Discharge ESD Protection (Note 2 , recommended. 10 Chip Information TRANSISTOR COUNT: 676 , Printed USA is a registered trademark of Maxim Integrated Products. MAX3093E/MAX3094E Package
Maxim Integrated Products
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RS-422/RS-485/RS-423 MAX3093EEPE MAX3094ECUE MAX3094ECSE MAX3094ECPE MAX3094EESE

hamamatsu c1000

Abstract: OG 72 DN 1024 R 128 S10202-08 4160 × 128 S10202-16 4224 × 128 *1: The C1000 series cam eras Type No. Number , temperature * 2 Storage temperature Output transistor drain voltage R e s e t d ra in vo lta g e Overflow , transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Overflow drain voltage , -1 Transfer gate-a Digital GND No connection Analog GND Output transistor source-a 1 Output drain-1 Output transistor source-a 2 No connection No connection Output gate Reset drain Overflow drain
Hamamatsu Photonics
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S10200-02 S10201-04 hamamatsu c1000 OG 72 DN 1024 R transistor 1BW 57 s14800 TDI CCD bi-directional D-82211 SE-171 KMPD1098E04

transistor t348

Abstract: 276-640 use in the following markets: USA, South America, Europe and most of the Far East countries. The , Linear zoom function X X X 50/60 50/60 60 Colour matrix USA / Japan X YUV , America M/N M1970M USA M M1970M West Europe B/G G1984M West Europe + U.K. B , originally designed for the USA market, where the modulation level of commercials is increased. A second , an emitter follower (TR105) is connected, to drive the sound traps. The collector of this transistor
STMicroelectronics
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STV0676 STV-676-E01 transistor t348 276-640 transistor t349 v2wtool STMicroelectronics transistor r1004 VV6411 VV6501 7316135C VV6500

transistor C9012

Abstract: transistor c9018 vice versa. Some dead time must be inserted between the time one transistor of the half-bridge is , Power MOSFETs and IGBTs. A Power MOSFET is a voltage-controlled transistor. It is designed for , Transistor (IGBT) is controlled by a MOSFET on its base. A built-in temperature monitor and overtemperature
Philips Semiconductors
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transistor C9012 transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram GTV1000 AN98051 TDA884X C1023 C1020 C1035

2711P-RN6

Abstract: 2711P-RDT10C ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M .for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product. Model No. CF-731 2 3 4 X 5 6 1: CPU type E: Intel® Pentium® M Processor 1.4 GHz 2: LCD type 3: 13.3-type TFT /XGA Color 3: HDD type , table 2-1 LASER SAFETY INFORMA TION For U.S.A. Class 1 LASER-Product This product is certified
Rockwell Automation
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2711P-RN6 2711P-RDT10C 9701-VWSTENE 2711p-t6c20d 2711P-T10C4d1 2711P-T7C4D1 2706-PRIO 2706-PDHP 2711P-CBL-EX04 DH-485 2706-PDH485 1747-AIC

d5023

Abstract: C5027 R Integrated Circuit IGBT Insulated-Gate Bipolar Transistor IM Induction Motor IPM Integrated , turn-on time, some dead time must be inserted between the time one transistor of the half-bridge is , voltage-controlled transistor. It is designed for high-frequency operation and has a low-voltage drop, so it has low power losses. An Insulated-Gate Bipolar Transistor (IGBT) is controlled by a MOSFET on its base. The
Freescale Semiconductor
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d5023 C5027 R d3000 mosfet C5027 r transistor mosfet c5027 C6017 56F8013 56800E DRM075

d667 transistor

Abstract: nec tokin oe 128 SEMICON INDEXES volume: i INTERNATIONAL TRANSISTOR INDEX 23nd EDITION 1997/8 â \ 1 .5 â , .* CAR CARTER TRANSISTOR CORP. CRT CENTRAL SEMICONDUCTOR CORPORATION CEN CENTRONIC Ltd. CET CERLED ELS CHINA SEMICONDUCTOR CORP. CSC CLAI REX ELECTRONICS CLX CLEVITE TRANSISTOR PRODUCTS* ITT COLLMER SEMICONDUCTOR INC. COL COMMUNICATIONS TRANSISTOR CORP.* CTC COMPAGNIE DE LAMPS* CDL COMPAGNIE INDUSTRIELLE , DIODE TRANSISTOR INC. DIT DIODES INC. Dll DIOTEC ELECTRONICS CORP. DIO DIOTEC ELEKTRONISCHE
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d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin K105 mosfet tokin lcd inverter EN60825 HSGND11 C1611 R1601 R1600 R1602

equivalent of transistor c5027

Abstract: equivalent transistor D5023 U.S.A. Our Green Initiative symbol recognizes our role and responsibility in promoting
Freescale Semiconductor
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equivalent of transistor c5027 equivalent transistor D5023 r2003 TRANSISTOR IN4007 diode documentation. free equivalent of transistor c6017 IRAMS10UP60A with sensorless bldc DRM077
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