NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: OF SWITCHING TRANSISTOR COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REVERSE-GOING LINEAR , is a monolithic integrated circuit desi-gned to regulate and control the switching transistor in a , 4.7nF 4.7nF B250/ B250/ C1000 18 17 16 15 14 13 12 11 10 2.7 TDA4601 TDA4601 , , controls, and protects the switching transistor in reverse converter power supplies at starting, normal , enables the supply to the coupling electrolytic capacitor and the switching transistor. Up to a supply ... | Original |
8 pages, |
transistor bu508 1N4007 4601 BU508 TRANSISTOR specification BY295-450 C1000 eps CONTROLLER 1N4003 Philips Electrolytic Capacitor 250v TDA 4601 C2540 BY295/450 220V AC 12V DC regulated switching TDA4601 TDA4601 abstract |
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| Abstract: OF SWITCHING TRANSISTOR COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REVERSE-GOING LINEAR , is a monolithic integrated circuit desi-gned to regulate and control the switching transistor in a , 4.7nF 4.7nF B250/ B250/ C1000 18 17 16 15 14 13 12 11 10 2.7 TDA4601 TDA4601 , , controls, and protects the switching transistor in reverse converter power supplies at starting, normal , enables the supply to the coupling electrolytic capacitor and the switching transistor. Up to a supply ... | Original |
8 pages, |
i c tda 4601 voltage C2540 1N4003 1N4007 BY295-450 C1000 TDA4601B 4601 TDA 4601 BY258 TDA4601 BY258/200 BY295 TDA4601 abstract |
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| Abstract: 128 S10202-08 S10202-08 4160 Ã- 128 S10202-16 S10202-16 4224 Ã- 128 *1: The C1000 series cam eras Type No. Number , * 2 Storage temperature Output transistor drain voltage R e s e t d ra in vo lta g e Overflow , transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Overflow drain voltage , Transfer gate-a Digital GND No connection Analog GND Output transistor source-a 1 Output drain-1 Output transistor source-a 2 No connection No connection Output gate Reset drain Overflow drain ... | Original |
11 pages, |
TDI ccd sensor CCD Linear Image Sensor lta 601 mosfet ssd OSb13 S10200-02 C1000 S10202-08 tdi ccd 512 S10202-16 HAMAMATSU TDI CCD Linear Image Sensor 2048 schematic S10201-04 OG 72 DN 1024 R S10200-02 abstract |
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| Abstract: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 AT-32063 Dual Transistor Application Note , silicon bipolar transistor. The AT-32063 AT-32063 consists of two AT-320XX AT-320XX transistors mounted in a single , transistors. One transistor is operating in a common emitter configuration followed by a second transistor , Figure 1. The first transistor connected as a common emitter has its emitter hard grounded for both good RF performance and a dc ground. Circuit Topologies The AT-32063 AT-32063 dual transistor can be used ... | Original |
12 pages, |
D2030 c 2073 amplifier circuit diagram AT-32063 18 sot-363 rf power amplifier AT-320XX SC-70 AT-32063 abstract |
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| Abstract: , output enabled Output disabled VCC - 1.5 V k Human Body Model 2 � IE C1000-4-2 Air-Gap Discharge � IE C1000-4-2 Contact Discharge ESD Protection (Note 2) V � , recommended. 10 Chip Information TRANSISTOR COUNT: 676 , Products Printed USA is a registered trademark of Maxim Integrated Products. ... | Original |
12 pages, |
MAX3093EESE MAX3094E MAX3093EEUE MAX3093E MAX3093ECUE MAX3093ECSE MAX3093ECPE MAX3094EEUE 34C86 transistor C1000 USA RS-422/RS-485 MAX3093E/MAX3094E RS-422/RS-485 abstract |
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| Abstract: STV0676 STV0676 Evaluation Kit User Manual USER MANUAL Introduction This document details the STV0676 STV0676 evaluation kit contents and operation. The STV-676-E01 STV-676-E01 evaluation kit allows the user to evaluate the operation of the STV0676 STV0676 co-processor used in conjunction with the VV6411 VV6411(CIF) and VV6501 VV6501 (VGA) colour CMOS image sensors. The EVK allows the STV0676 STV0676 to be used both as a webcam and in 8-wire parallel output "digiport" mode. Key Features s Real-time video - up to 30fps VGA s 8-wire paralle ... | Original |
53 pages, |
VV6501 webcam SOCKET CONNECTION DIAGRAM webcam circuit diagram CCIR-656 R1004 image sensor digital vga i2c webcam SCHEMATIC webcam board smd diode code g6 9 smd TRANSISTOR code b6 STV-676-E01 webcam Schematic Diagram transistor r1004 STV0676 STV0676 abstract |
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| Abstract: , output enabled Output disabled VCC - 1.5 V k Human Body Model 2 � IE C1000-4-2 Air-Gap Discharge � IE C1000-4-2 Contact Discharge ESD Protection (Note 2) V � , recommended. 10 Chip Information TRANSISTOR COUNT: 676 , Printed USA is a registered trademark of Maxim Integrated Products. MAX3093E/MAX3094E MAX3093E/MAX3094E Package ... | Original |
13 pages, |
MAX3093EEUE MAX3093EESE MAX3093ECUE MAX3093ECSE MAX3093ECPE MAX3093E MAX3094E 34C86 RS-422/RS-485 MAX3093E/MAX3094E RS-422/RS-485 abstract |
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| Abstract: - 1.5 V k 2.4 3.5 mA 0.001 10 礎 Human Body Model 2 � IE C1000-4-2 Air-Gap Discharge � IE C1000-4-2 Contact Discharge ESD Protection (Note 2) V � , recommended. 10 Chip Information TRANSISTOR COUNT: 676 , Printed USA is a registered trademark of Maxim Integrated Products. MAX3093E/MAX3094E MAX3093E/MAX3094E Package ... | Original |
13 pages, |
MAX3094E MAX3093EEUE MAX3093EESE MAX3093ECUE MAX3093ECSE MAX3093ECPE MAX3093E 34C86 RS-422/RS-485 MAX3093E/MAX3094E RS-422/RS-485 abstract |
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| Abstract: use in the following markets: USA, South America, Europe and most of the Far East countries. The , Linear zoom function X X X 50/60 50/60 60 Colour matrix USA / Japan X YUV , America M/N M1970M M1970M USA M M1970M M1970M West Europe B/G G1984M G1984M West Europe + U.K. B , originally designed for the USA market, where the modulation level of commercials is increased. A second , an emitter follower (TR105 TR105) is connected, to drive the sound traps. The collector of this transistor ... | Original |
76 pages, |
C9012 pnp transistor c2026 transistor data C9012 datasheet TDA7075AQ TELEVISION EHT TRANSFORMERS transistor c9012 application TDA8842 s1 C9012 transistor C9014 Transistor transistor C9015 c9015 transistor transistor C9013 GTV1000 AN98051 GTV1000 abstract |
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| Abstract: Visualization Platforms Selection Guide Operator Interface Terminals Industrial Computers and Monitors Message Displays HMI Software 2 Visualization Platforms Selection Guide Information.in the right place.at the right time.and in the right format. Comprised of a suite of scalable HMI software and family of operator interface hardware, the Rockwell Automation visualization solutions you'll see here provide plant floor machine operators, supervisors, engineers, and busine ... | Original |
88 pages, |
2711p-B6c20d 2711P-B15C4A2 PanelView Plus 600 FactoryTalk View Machine 2711P-RN3 Allen-Bradley panelview plus 1250 2711PC-B4C20D 2711P-RDT10C 2711P-T10C4d2 2711PC-T6M20D Allen-Bradley 2711p-T12C4D1 2711P-T12C4D1 2711p-t6c20d datasheet abstract |
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| DISS Power Dissipation* (T C 3 805C) 1000 W I C Device Current* 28 A V CC Collector ST | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS MSC81400M MSC81400M MSC81400M MSC81400M TRANSISTORS .400 x .500 2LFL (S038) hermetically sealed . REFRACTORY\GOLD METALLIZATION . RUGGEDIZED " transistor is a high peak pulse power device specifically de- signed for DME/TACAN avionics applications www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2749-v3.htm |
STMicroelectronics | 25/05/2000 | 5.66 Kb | HTM | 2749-v3.htm |
| ST | GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed . EMITTER sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a re A R BE = 10 W 45 - - V I CBO V CB = 28V - - 5.0 mA h FE V CE = 5V I C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2759-v3.htm |
STMicroelectronics | 25/05/2000 | 6.13 Kb | HTM | 2759-v3.htm |
| Parameter Value Unit P DISS Power Dissipation* (T C 3 805C) 1000 W I C Device Current* 28 A V CC ST | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS MSC81400M MSC81400M MSC81400M MSC81400M October 1992 AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038) hermetically DESCRIPTION The MSC81400M MSC81400M MSC81400M MSC81400M "Super Power" transistor is a high peak pulse power device specifically de www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2749.htm |
STMicroelectronics | 20/10/2000 | 5.88 Kb | HTM | 2749.htm |
| C = 1000mA 15 - 120 - DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY COLLECTOR ST | GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS MSC October 1992 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010 hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2759.htm |
STMicroelectronics | 20/10/2000 | 6.4 Kb | HTM | 2759.htm |
| = 28V - - 5.0 mA h FE V CE = 5V I C = 1000mA 15 - 120 - DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs ST | GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS MSC82010 MSC82010 MSC82010 MSC82010 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS Document Number: 2759 Date APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed . EMITTER BALLASTED . VSWR .0 GHz DESCRIPTION The MSC82010 MSC82010 MSC82010 MSC82010 is a common base hermetically sealed silicon NPN microwave transistor www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2759-v1.htm |
STMicroelectronics | 02/04/1999 | 4.32 Kb | HTM | 2759-v1.htm |
| = 5V I C = 1000mA 15 - 120 - DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY ST | GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .230 2L STUD (S016) hermetically sealed . EMITTER - United Kingdom - U.S.A MSC81020 MSC81020 MSC81020 MSC81020 5/5 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2736-v3.htm |
STMicroelectronics | 25/05/2000 | 6.03 Kb | HTM | 2736-v3.htm |
| IC = 15mA R BE = 10 W 45 - - V I CBO V CB = 28V - - 5.0 mA h FE V CE = 5V I C = 1000m ST | GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS MSC October 1992 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .230 2L STUD (S016 - U.S.A MSC81020 MSC81020 MSC81020 MSC81020 5/5 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2736.htm |
STMicroelectronics | 20/10/2000 | 6.29 Kb | HTM | 2736.htm |
| = 28V - - 5.0 mA h FE V CE = 5V I C = 1000mA 15 - 120 - DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs ST | GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS MSC82010 MSC82010 MSC82010 MSC82010 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS Document Number: 2759 Date APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed . EMITTER BALLASTED . VSWR .0 GHz DESCRIPTION The MSC82010 MSC82010 MSC82010 MSC82010 is a common base hermetically sealed silicon NPN microwave transistor www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2759-v2.htm |
STMicroelectronics | 14/06/1999 | 4.28 Kb | HTM | 2759-v2.htm |
| Value Unit P DISS Power Dissipation* (T C 3 805C) 1000 W I C Device Current* 28 A V CC Collector ST | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS MSC81400M MSC81400M MSC81400M MSC81400M AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Document Number: 2749 Date Update: 8/4/94 Pages Format October 1992 AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038 DESCRIPTION The MSC81400M MSC81400M MSC81400M MSC81400M "Super Power" transistor is a high peak pulse power device specifically de- signed www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2749-v1.htm |
STMicroelectronics | 02/04/1999 | 3.86 Kb | HTM | 2749-v1.htm |
| Value Unit P DISS Power Dissipation* (T C 3 805C) 1000 W I C Device Current* 28 A V CC Collector ST | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS MSC81400M MSC81400M MSC81400M MSC81400M AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Document Number: 2749 Date Update: 8/4/94 Pages Format October 1992 AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038 DESCRIPTION The MSC81400M MSC81400M MSC81400M MSC81400M "Super Power" transistor is a high peak pulse power device specifically de- signed www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2749-v2.htm |
STMicroelectronics | 14/06/1999 | 3.82 Kb | HTM | 2749-v2.htm |