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Part Manufacturer Description Datasheet BUY
PMP6710 Texas Instruments 85VAC-265VAC Input, 12V/1A Output, Green-mode Flyback With BJT visit Texas Instruments
PMP6788 Texas Instruments 85VAC-265VAC Input, 15V/1A Output, Green-mode Flyback With BJT visit Texas Instruments
LM96163CISD/NOPB Texas Instruments Remote Diode Dig Temp Sens w/Int Fan Cntrl & TruTherm BJT Transistor Beta Compensation Tech 10-WSON -40 to 125 visit Texas Instruments Buy
LM96163CISDX/NOPB Texas Instruments Remote Diode Dig Temp Sens w/Int Fan Cntrl & TruTherm BJT Transistor Beta Compensation Tech 10-WSON -40 to 125 visit Texas Instruments
LM95245CIM Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-SOIC visit Texas Instruments
LM95245CIMMX Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-VSSOP -40 to 125 visit Texas Instruments

transistor BJT

Catalog Datasheet MFG & Type PDF Document Tags

power BJT 1000 volt vce

Abstract: Catalog Bipolar Transistor Transistor (BJT) Master Table Transistors < 25V Transistors 30V to 50V Transistors 55V to 100V Transistors >100V Gate Drivers Avalanche Transistors Pre-Bias Transistors Darlington Transistors Transistor and , Contact Us FZT560 Transistor (BJT) Master Table Transistors >100V FZT560 Product description , SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1­ NOVEMBER 1998 FEATURES * 500 Volt VCEO , plus BJT IntelliFET H Bridge DIOFETTM (Diodes Schottky Integrated MOSFET) Protection Devices Zener TVSs
Diodes
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power BJT 1000 volt vce Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 7336 FZT560TA

HDR2X3

Abstract: HDR2X8 NUP2201 E HDR_1X2 R2 2 E U3 4 J1 2 TRANSISTOR\BJT +5VU S2 3 2 4 , C25 C4 10UF 31 16 R19 0 B B 3 C R32 10K U5 TRANSISTOR\BJT 1 B R1 +5V_SW R9 0 RESET_B 4,7 TRESET_IN C D1 1 U4 A R2 E R1 TRANSISTOR\BJT , 3 +5VU R31 2 U1 R2 TRANSISTOR\BJT 2 E TRESET_OUT A A ICAP Classification
Freescale Semiconductor
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HDR2X3 HDR2X8 TWR-S12G240 SCH-26925 SPF-26925 AD22/LCD AD23/LCD AD24/LCD

h bridge bjt

Abstract: transistor 1N4148 bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT , connected between Cs and ground. The EL lamp is connected between VA and V B. The switching BJT charges the , increase. Once the voltage at Cs reaches a nominal value of 50V, the switching BJT is turned off to , On-resistance of switching transistor VDD supply current (excluding inductor current) HV8061 HV8063 HV8061 , 10M fi V qq = 1.0V to 3.5V VA.B output drive frequency ^sw Switching transistor frequency
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LQH4N102K04M h bridge bjt transistor 1N4148 Transistor BJT High Current 24v to HV8061LG HV8063LG HV8061NG HV8063NG HV8061X HV8063X
Abstract: junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set , ⡠Pagers ⡠Cellular phones ⡠Remote control units ⡠Calculators The switching BJT , On-resistance o f switching transistor 15 £2 Idd V DD supply current (excluding HV8051 1.5 , el-osc = ^ ^£2 ^sw Switching transistor frequency ^SW-osc = 330KS2, R el-osc = 5 D3 Switching transistor duty cycle Recommended Operating Conditions Parameter Symbol Ta Load capacitance -
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HV8053 HV8051P HV8051LG HV8051X HV8053P HV8053LG

CAPACITOR CGW

Abstract: HV825 has tw o internal oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between , between V A and V B. The switching BJT charges the external inductor and discharges it into the 0.01 to , switching transistor V DD supply current (including inductor current) Quiescent V DD supply current O utput voltage on Vcs Differential output voltage across lamp VA.B output drive frequency Switching transistor
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CAPACITOR CGW HV825LG HV825MG HV825X LQH4N561

1N41482

Abstract: LQH4N102K04M00 transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an , phones Remote control units Calculators The switching BJT charges the external inductor and , switching transistor 15 VDD supply current (excluding HV8051 1.5 mA VDD = 1.0V to 1.6V , VDD = 1.0V to 1.6V, RSW-osc = 470K, REL-osc = 10 M HV8053 Switching transistor frequency , = 330K, REL-osc = 5 M 85 % Switching transistor duty cycle VDD = 1.0V to 3.5V
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HV8053X 1N41482 LQH4N102K04M00 a 1413 transistor Bipolar Junction Transistor transistor K 1413 HV8051/HV8053
Abstract: oscillators, a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an exter. pin and the VD pin. D nal resistor connected between the R , ¡ Remote enable function Applications â¡ Pagers â¡ Cellular phones â¡ Watches The switching BJT , start to increase. Once the voltage at Cs reaches a nominal value of 50V, the switching BJT is turned , VD = 2.4V to 3.5V, ENABLE = LOW D Min RoS(on) On-resistance of switching transistor *DD -
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HV8061/HV8063 00GM727 330KQ SO-14

disadvantages of microcontroller

Abstract: power bjt advantages and disadvantages the bipolar junction transistor's (BJT) VCE saturation. Choosing a BJT with a lower VCE saturation , Option 3 uses a MOSFET transistor instead of a BJT (see Figure 3). A MOSFET pulls the CM voltage closer , 1-MICROCONTROLLER FLAG Option 1 uses a general-purpose NPN transistor and three biasing resistors , of the transistor are biased at AVDD/2, the common-mode (CM) voltage. The collector is connected to the IOVDD of the codec, which can range from 1.8 V to 3.3 V. The transistor is normally off because
Analog Devices
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AN-1056 ADAU1361 ADAU1761 disadvantages of microcontroller power bjt advantages and disadvantages amplifier advantages and disadvantages disadvantages of mosfet mosfet stereo headphone amplifier circuit headphone jack ADAU1361/ADAU1761 AN08757-0-2/10

transistor bjt

Abstract: CX20464 signal acquisition (narrow: 4 to 8, wide: 16h to 180). Replaced the Bipolar Junction Transistor (BJT
Mindspeed Technologies
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CX20464 CX20464-11P CX20464-12P CX20464-13P CX20464-15P

HV82

Abstract: 1N4148 has two internal oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the , switching BJT charges the external inductor and discharges it into the 0.01 to 0.1µF, 100V capacitor at CS , =1.5V. See test circuit. 1.0 µA R SW-osc=GND On-resistance of switching transistor VDD supply , output drive frequency 400 Hz VDD=1.5V. See test circuit. fSW Switching transistor
Supertex
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HV82 1N4148

tsmc 0.18um CMOS transistor

Abstract: Bipolar Junction Transistor , Source-Follower gain, BJT, bipolar junction transistor, common drain amplifier, small-signal model, calculating , junction transistor (BJT). Thus, nonconventional followers must be designed to give a gain close to 1. In , of 5 and: Where is the DC gain from the transistor, UO is surface mobility, COX is gate oxide capacitance per unit area, W is transistor gate width, and L is transistor gate length. Note: The intrinsic , Resistance (RS) The RS results in Table 2 were obtained using the same transistor that was used for the gain
Maxim Integrated Products
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MAX2645 APP4231 tsmc 0.18um CMOS transistor TSMC 0.18um Process parameters TSMC 0.18um ic 7490 data sheet Datasheet of 7490 IC tsmc bjt model AN4231

BJT Driver

Abstract: power BJT , a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the Rsw-osc pin and the VDD pin , function Applications Pagers Cellular phones Watches The switching BJT charges the external , the voltage at Cs reaches a nominal value of 50V, the switching BJT is turned off to conserve power , Conditions RDS(on) On-resistance of switching transistor IDD VDD supply current (excluding
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BJT Driver power BJT bjt high voltage transistor BJT Driver BJT, General electric DC TO AC CONVERTER
Abstract: has two internal oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the R , 0.01 to 0.1 nF, 100V capacitor is connected between Cs and ground. The EL lamp is The switching BJT , conditions l=50mA VDD=1,5V. See test circuit. R s w -o s c = G N D On-resistance of switching transistor , Differential output voltage across lamp VA.B output drive frequency Switching transistor frequency Switching -
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Abstract: two internal oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the RSW-osc , VB . The switching BJT charges the external inductor and discharges it into the 0.01 to 0.1µ F, 100V , =25° C) Parameter On-resistance of switching transistor VDD supply current (including inductor current , frequency Switching transistor frequency Switching transistor duty cycle 52 104 400 30 88 56 112 30 min typ -
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Abstract: switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the Rsw-osc P'n ar|d the supply pin VDD. The , ⡠Pagers ⡠Portable transceiver ⡠Cellular phones The switching BJT charges the external , max units 15 typ £} On-resistance of switching transistor VD supply current , =1,5V. See test circuit. fs w Switching transistor frequency 30 KHz VDD=1,5V. See test -
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Abstract: bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT , switching BJT charges the external inductor and discharges it into the 0.01 to 0.1µF, 100V capacitor at the , specified Symbol RDS(ON) IIN IDDQ VCS VA-B fEL fSW D Parameter On-resistance of switching transistor VDD , Differential output voltage across lamp VA-B output drive frequency Switching transistor frequency Switching transistor duty cycle Min 52 104 400 Typ 30 56 112 30 88 Max 15 38 1.0 68 136 - TA=25°C) Units mA A V V Supertex
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27BSC 65BSC DSFP-HV825 A111306
Abstract: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES â'¢ Advanced primary sensing control circuitry achieves accurate voltage and current (CV and CC) regulation â'¢ Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design solutions â'¢ Fast start-up performance without additional active components for low BOM cost C2173 SOT23-6 â , the AUX pin. BD Base drive for BJT. ED Emitter drive for BJT. FB The FB input Cambridge Semiconductor
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DS-5706-1403

100v capacitor

Abstract: transistor bjt oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the RSW-osc pin and the supply , Pagers Portable Transceiver Cellular phones Remote control units Calculators The switching BJT , On-resistance of switching transistor max conditions µA RSW-osc=GND I=50mA IDDQ Quiescent , Switching transistor frequency 30 KHz VDD=1.5V. See test circuit. D Switching transistor duty
Supertex
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100v capacitor 100v/capacitor datasheet 100V 1n4148 die

uis test

Abstract: ZXMN20B28K greater power efficiency than the equivalent solution using a bipolar transistor (BJT) and inductor
Diodes
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ZXMN20B28K ZXMN15A27K ZXMN10A25K ZXMN10A08G ZXMN10A11K ZXMN10A11G uis test Avalanche Transistor Circuits for Generating TO252-3L TIP 298

bjt specifications

Abstract: transistor BJT Driver oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the RSW-osc pin and the supply , Pagers Portable Transceiver Cellular phones Remote control units Calculators The switching BJT , 15 On-resistance of switching transistor Max Conditions µA RSW-osc=GND I , . fSW Switching transistor frequency 30 KHz VDD=1.5V. See test circuit. D Switching
Supertex
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bjt specifications transistor databook BJT
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