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LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 ri Buy

transistor BJT

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Abstract: Diodes Power Zener Diodes SBR® (Super Barrier Rectifiers) Bipolar Transistors Transistor (BJT) Master , Contact Us FZT560 FZT560 Transistor (BJT) Master Table Transistors >100V FZT560 FZT560 Product description , SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1­ NOVEMBER 1998 FEATURES * 500 Volt VCEO , Avalanche Transistors Pre-Bias Transistors Darlington Transistors Transistor and Schottky Combination , (N+P) 20V Complementary 30V Complementary 31V to 100V Complementary MOSFET plus SBR MOSFET plus BJT ... Original
datasheet

5 pages,
363.9 Kb

transistor catalog 300 WATT 500v p channel mosfet 7336 BJT IC Vce 5v FZT560 p channel mosfet 100v transistor BJT 1.2 Volt led boost driver BJT IC Vce power bjt transistor 600v bjt 500v power BJT 1000 volt vce FZT560 abstract
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Abstract: Transistor (BJT) DC servo circuit with a CMOS design. Limit amp servo amplifier's default is now "off" ... Original
datasheet

2 pages,
105.65 Kb

CX20464 transistor bjt CX20464 abstract
datasheet frame
Abstract: greater power efficiency than the equivalent solution using a bipolar transistor (BJT) and inductor. ... Original
datasheet

2 pages,
220.59 Kb

ZXMN7A11K electronic halogen transformer design electronic transformer halogen TO252-3L ZXMN10A08G ZXMN10A11G ZXMN10A11K ZXMN10A25K ZXMN15A27K ZXMN6A25N8 ZXMN7A11G ZXMN20B28K uis test ZXMN20B28K abstract
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Abstract: junction transistor's (BJT) VCE saturation. Choosing a BJT with a lower VCE saturation lowers the amount , MOSFET transistor instead of a BJT (see Figure 3). A MOSFET pulls the CM voltage closer to 0 V than a , 1-MICROCONTROLLER FLAG Option 1 uses a general-purpose NPN transistor and three biasing resistors (see Figure 1). Normally, with a floating load connected to the headphone jack, the base and emitter of the transistor are , , which can range from 1.8 V to 3.3 V. The transistor is normally off because VBE = 0 V. When a plug ... Original
datasheet

2 pages,
85.52 Kb

ADAU1361 ADAU1X61 advantages of microcontroller AN-1056 bipolar junction transistor stereo jack socket MMBT3904 small signal BJT transistor DISADVANTAGES OF TRANSISTOR BJT IC Vce ADAU1761 headphone jack amplifier advantages and disadvantages AN-1056 abstract
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Abstract: transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an exter , The EL lamp is connected between VA and V B. The switching BJT charges the external inductor and dis , Cs reaches a nominal value of 50V, the switching BJT is turned off to conserve power. The outputs VA , transistor VDD supply current (excluding inductor current) HV8061 HV8061 HV8063 HV8063 HV8061 HV8061 HV8063 HV8063 Idd V D0 = 1.0V , 3.5V VA.B output drive frequency ^sw Switching transistor frequency HV8061 HV8061 HV8063 HV8063 D3 ... OCR Scan
datasheet

4 pages,
81.31 Kb

Transistor BJT High Current transistor 1N4148 HV8061 HV8063 HV8061 abstract
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Abstract: , a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the Rsw-osc pin and the VDD , function Applications Pagers Cellular phones Watches The switching BJT charges the external , the voltage at Cs reaches a nominal value of 50V, the switching BJT is turned off to conserve power. , Conditions RDS(on) On-resistance of switching transistor IDD VDD supply current (excluding ... Original
datasheet

4 pages,
33.62 Kb

1mh inductor data sheet 1mh inductor design 1N4148 1n4148 die Bipolar Junction Transistor bjt transistors DC 5V to DC 100V CIRCUIT DIAGRAM DC converter 24v input 100v output switching transistor data book LQH4N102K04M00 DC TO AC CONVERTER BJT, General electric HV8061/HV8063 HV8061 HV8061/HV8063 abstract
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Abstract: Diodes Power Zener Diodes SBR® (Super Barrier Rectifiers) Bipolar Transistors Transistor (BJT) Master , Contact Us FZT560 FZT560 Transistor (BJT) Master Table Transistors >100V FZT560 FZT560 Product description , SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1­ NOVEMBER 1998 FEATURES * 500 Volt VCEO , Avalanche Transistors Pre-Bias Transistors Darlington Transistors Transistor and Schottky Combination , (N+P) 20V Complementary 30V Complementary 31V to 100V Complementary MOSFET plus SBR MOSFET plus BJT ... Original
datasheet

6 pages,
374.02 Kb

transistors diodes ics cross reference FMMT723TA FMMT734TA FMMTA92QTA FMMTL717QTA FR107-T-F fzt1049ata fzt560 FZT649TA FZT689BTA Cross Reference sot23 FMMT634TA FMMTA42QTA FZT560 FZT560 abstract
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Abstract: , Source-Follower gain, BJT, bipolar junction transistor, common drain amplifier, small-signal model, calculating , junction transistor (BJT). Thus, nonconventional followers must be designed to give a gain close to 1. In , of 5 and: Where is the DC gain from the transistor, UO is surface mobility, COX is gate oxide capacitance per unit area, W is transistor gate width, and L is transistor gate length. Note: The intrinsic , Resistance (RS) The RS results in Table 2 were obtained using the same transistor that was used for the gain ... Original
datasheet

5 pages,
37.58 Kb

7490 IC CHIP tsmc bjt model tsmc 0.18um CMOS transistor APP4231 MAX2645 ic 7490 TSMC cmos 0.18um Datasheet of 7490 IC TSMC 0.18um ic 7490 data sheet Bipolar Junction Transistor datasheet abstract
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Abstract: oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the RSW-osc pin and the supply , Pagers Portable Transceiver Cellular phones Remote control units Calculators The switching BJT , On-resistance of switching transistor max conditions µA RSW-osc=GND I=50mA IDDQ Quiescent , Switching transistor frequency 30 KHz VDD=1.5V. See test circuit. D Switching transistor duty ... Original
datasheet

4 pages,
24.88 Kb

HV825X HV825MG HV825LG HV825 1n4148 die 1N4148 100v/capacitor datasheet 100V transistor bjt 100v capacitor HV825 abstract
datasheet frame
Abstract: oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the RSW-osc pin and the supply , Pagers Portable Transceiver Cellular phones Remote control units Calculators The switching BJT , 15 On-resistance of switching transistor Max Conditions µA RSW-osc=GND I=50mA , circuit. fSW Switching transistor frequency 30 KHz VDD=1.5V. See test circuit. D ... Original
datasheet

4 pages,
325.1 Kb

transistor databook BJT 1n4148 die bjt specifications HV82 HV825 HV825LG HV825MG HV825X transistor BJT Driver 1N4148 HV825 abstract
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Datasheet Content (non pdf)

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Bipolar Junction Transistor (BJT) A PN junction device formed from back to back junctions. Since it is a three terminal device
www.datasheetarchive.com/files/agilent/hprfhelp/glossary/glos_a_e/bjt.htm
Agilent 23/11/1999 13.47 Kb HTM bjt.htm
drive an external low resistance NPN bipolar junction transistor (BJT). The DRIVE output provides typically 7 mA at 100 kHz typical switching frequency to drive the BJT. Features Operates from 0.7 to 9 V DC Ultra low operating supply current-typically 17 uA Uses external power BJT transistor SA57255-20GW SA57255-20GW SA57255-20GW SA57255-20GW 2.4 DC-DC converters DC-DC Switching Regulator 3.8 0.7@1 mA 76 no
www.datasheetarchive.com/files/philips/pip/sa57255-xx_1.html
Philips 23/04/2003 8.58 Kb HTML sa57255-xx_1.html
designed to drive an external low resistance NPN bipolar junction transistor (BJT). Features Uses external power NPN BJT High efficiency-typically 83 pct. High precision output-typically +- dissipation(mW) Remarks Switching transistor SA57251-20GW SA57251-20GW SA57251-20GW SA57251-20GW 2.4 DC-DC converters DC-DC Switching
www.datasheetarchive.com/files/philips/pip/sa57251-xx_1.html
Philips 23/04/2003 8.64 Kb HTML sa57251-xx_1.html
semiconductors are the Power Diode, the power Bipolar Junction Transistor (BJT), the Thyristor (Triacs and SCRs), the Gate Turn-off Thyristor (GTO), the Power MOSFET, and the Insulated Gate Bipolar Transistor ) Darlington = 0.8V + V CE(sat) BJT and also the increased turn-off time - the power stage transistor can voltage ratings of the transistor (forward, V F and reverse, V DRM ) depend upon the thickness of ) APPLICATION NOTE 4/15 3 THE BIPOLAR TRANSISTOR see figure 6. 3.1 Current The current capability is defined
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3729.htm
STMicroelectronics 20/10/2000 28.53 Kb HTM 3729.htm
Diode, the power Bipolar Junction Transistor (BJT), the Thyristor (Triacs and SCRs), the Gate Turn-off Thyristor (GTO), the Power MOSFET, and the Insulated Gate Bipolar Transistor (IGBT). 2 ) Darlington = 0.8V + V CE(sat) BJT and also the increased turn-off time - the power stage transistor to cause breakdown - hence the voltage ratings of the transistor (forward, V F and reverse, V /15 3 THE BIPOLAR TRANSISTOR see figure 6. 3.1 Current The current capability is defined by: V
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3729-v1.htm
STMicroelectronics 25/05/2000 27.39 Kb HTM 3729-v1.htm
Transistor Specification Selection Guide Maximum Collector Current (BJT Size HPRFhelp home Products BJTs FETs & PHEMTs Select by Spec Bias: Voltage Bias: Current Packages: BJT Packages: FET size: BJT size: FET transistor. A higher rating equates to a higher output power capability; a lower rating indicates lower power
www.datasheetarchive.com/files/agilent/hprfhelp/products/xrs/sp_im_m.htm
Agilent 23/11/1999 27.48 Kb HTM sp_im_m.htm
: Voltage Bias: Current Packages: BJT Packages: FET size: BJT size: FET Transistor Specification Selection Guide Output Power as an Oscillator The oscillator P out of a transistor is approximately equal to the P 1dB available in amplifier transistor breakdown voltages. Direction: typically P out is between -10 and +10 dBm Range
www.datasheetarchive.com/files/agilent/hprfhelp/products/xrs/sp_po_o.htm
Agilent 23/11/1999 25.96 Kb HTM sp_po_o.htm
HPRFhelp home Products BJTs FETs & PHEMTs Select by Spec Bias: Voltage Bias: Current Packages: BJT Packages: FET size: BJT size: FET Transistor Specification Selection Guide Gate Width (FET Size field effect transistor's gate. It is directly related to P 1dB (bigger FETs can produce more output
www.datasheetarchive.com/files/agilent/hprfhelp/products/xrs/sp_wg_m.htm
Agilent 23/11/1999 11.96 Kb HTM sp_wg_m.htm
Silicon RF BJT/SIEGET ® SIEGET 25 Low Noise Amplifier with BFP420 BFP420 BFP420 BFP420 Transistor at 2.4GHz 81 K SIEGET 25 Silicon Bipolar Dielectric Resonator Oscillator (DRO) at 235 K Low-Noise Amplifier Optimized for Minimum Noise Figure at 1.9GHz using BFP420 BFP420 BFP420 BFP420 37 K Low-Noise with BFP520 BFP520 BFP520 BFP520 Transistor at 1.9 GHz 203 K 869 - 894 MHz Receiver Front End
www.datasheetarchive.com/files/infineon/products/35/35app3r.htm
Infineon 26/11/1998 4.8 Kb HTM 35app3r.htm
No abstract text available
www.datasheetarchive.com/download/17136562-608891ZC/mc34063a pspice models.zip (33063sub.DWG)
On Semiconductor 29/08/2007 70.84 Kb ZIP mc34063a pspice models.zip