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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Transistor (BJT) DC servo circuit with a CMOS design. Limit amp servo amplifier's default is now "off" ... | Original |
2 pages, |
CX20464 transistor bjt CX20464 abstract |
| Abstract: greater power efficiency than the equivalent solution using a bipolar transistor (BJT) and inductor. ... | Original |
2 pages, |
ZXMN7A11K electronic transformer halogen TO252-3L ZXMN10A08G ZXMN10A11G ZXMN10A11K ZXMN10A25K ZXMN15A27K ZXMN6A25N8 ZXMN7A11G electronic halogen transformer design ZXMN20B28K uis test ZXMN20B28K abstract |
| Abstract: junction transistor's (BJT) VCE saturation. Choosing a BJT with a lower VCE saturation lowers the amount , MOSFET transistor instead of a BJT (see Figure 3). A MOSFET pulls the CM voltage closer to 0 V than a , 1-MICROCONTROLLER FLAG Option 1 uses a general-purpose NPN transistor and three biasing resistors (see Figure 1). Normally, with a floating load connected to the headphone jack, the base and emitter of the transistor are , , which can range from 1.8 V to 3.3 V. The transistor is normally off because VBE = 0 V. When a plug ... | Original |
2 pages, |
ADAU1361 stereo jack socket small signal BJT transistor ADAU1761 MMBT3904 AN-1056 bipolar junction transistor power bjt advantages and disadvantages headphone jack Transistor BJT High Current disadvantages of microcontroller AN-1056 abstract |
| Abstract: , a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the Rsw-osc pin and the VDD , function Applications Pagers Cellular phones Watches The switching BJT charges the external , the voltage at Cs reaches a nominal value of 50V, the switching BJT is turned off to conserve power. , Conditions RDS(on) On-resistance of switching transistor IDD VDD supply current (excluding ... | Original |
4 pages, |
1mh inductor data sheet 1mh inductor design switching transistor data book 1N4148 LQH4N102K04M00 1n4148 die DC 5V to DC 100V CIRCUIT DIAGRAM Bipolar Junction Transistor bjt transistors BJT, General electric DC TO AC CONVERTER transistor BJT HV8061/HV8063 HV8061 HV8061/HV8063 abstract |
| Abstract: , Source-Follower gain, BJT, bipolar junction transistor, common drain amplifier, small-signal model, calculating , junction transistor (BJT). Thus, nonconventional followers must be designed to give a gain close to 1. In , of 5 and: Where is the DC gain from the transistor, UO is surface mobility, COX is gate oxide capacitance per unit area, W is transistor gate width, and L is transistor gate length. Note: The intrinsic , Resistance (RS) The RS results in Table 2 were obtained using the same transistor that was used for the gain ... | Original |
5 pages, |
MAX2645 APP4231 7490 IC CHIP TSMC 0.18um ic 7490 Datasheet of 7490 IC ic 7490 data sheet Bipolar Junction Transistor datasheet abstract |
| Abstract: oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the RSW-osc pin and the supply , Pagers Portable Transceiver Cellular phones Remote control units Calculators The switching BJT , 15 On-resistance of switching transistor Max Conditions uA RSW-osc=GND I=50mA , circuit. fSW Switching transistor frequency 30 KHz VDD=1.5V. See test circuit. D ... | Original |
4 pages, |
transistor databook BJT 1n4148 die bjt specifications HV82 HV825 HV825LG HV825MG HV825X transistor BJT Driver 1N4148 HV825 abstract |
| Abstract: oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the RSW-osc pin and the supply , Pagers Portable Transceiver Cellular phones Remote control units Calculators The switching BJT , On-resistance of switching transistor max conditions uA RSW-osc=GND I=50mA IDDQ Quiescent , Switching transistor frequency 30 KHz VDD=1.5V. See test circuit. D Switching transistor duty ... | Original |
4 pages, |
HV825X HV825MG HV825LG HV825 1n4148 die 1N4148 100v/capacitor datasheet 100V HV825 abstract |
| Abstract: transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an , phones Remote control units Calculators The switching BJT charges the external inductor and , switching transistor 15 VDD supply current (excluding HV8051 HV8051 1.5 mA VDD = 1.0V to 1.6V , = 1.0V to 1.6V, RSW-osc = 470K, REL-osc = 10 M HV8053 HV8053 Switching transistor frequency , = 330K, REL-osc = 5 M 85 % Switching transistor duty cycle VDD = 1.0V to 3.5V ... | Original |
4 pages, |
transistor a 1413 HV8053X HV8053LG HV8053 HV8051X HV8051LG HV8051 Bipolar Junction Transistor a 1413 transistor HV8051/HV8053 HV8051/HV8053 abstract |
| Abstract: internal oscillators, a switching bipolar junction transistor (BJT), and a high voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the RSW-osc pin , switching BJT charges the external inductor and discharges it into the 0.01 to 0.1uF, 100V capacitor at CS. , See test circuit. 1.0 uA R SW-osc=GND On-resistance of switching transistor VDD supply , output drive frequency 400 Hz VDD=1.5V. See test circuit. fSW Switching transistor ... | Original |
4 pages, |
HV825X HV825MG HV825LG HV825 HV82 1N4148 HV825 abstract |
| Abstract: elements exist, such as capacitances, bipolar junction transistor (BJT), and a diode. The inherent , parasitic BJT are connected together by source metal. In practice, the small resistance works as base resistance. Therefore, parasitic BJT can be turned on when enough current flows through Rb. Once the parasitic BJT turns on, a hot spot is formed and more current flows through it due to negative temperature coefficient of the BJT. Finally, the device fails. If the P-N junction temperature is higher than room ... | Original |
5 pages, |
pn junction diode structure Drive Base BJT BJT Gate Drive circuit fairchild power bjt AN-9065 AN-9065 abstract |
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| .lib" ; Optocouplers .lib "pwrbjt.lib" ; Power bipolar transistors (BJTs) .lib "pwrmos _misc.lib" ; Miscellaneous circuits .lib "bipolar.lib" ; Bipolar transistors .lib "darlngtn.lib" ; Darlington transistors .lib "diode.lib" ; Diodes .lib "jfet.lib" ; JFET transistors .lib "opamp.lib" ; Linear ICs: op-amps, voltage comparators, ; and voltage , ; varactors, Schottky diodes, BJTs, ; JFETs, power BJTs, power MOSFETs, opamps www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/nom_bscp.lib |
Spice Models | 29/07/2012 | 3.94 Kb | LIB | nom_bscp.lib |
| transistors (BJTs) .lib "pwrmos.lib" ; Power MOSFETs .lib "xtal.lib" ; Quartz .lib" ; Bipolar transistors .lib "dc_prim.lib" ; Primitive models for DAC & ADC Schematic models .lib "diode.lib" ; Diodes .lib "darlngtn.lib" ; Darlington transistors .lib "igbt.lib" ; IGBT transistors .lib "jfet.lib" ; JFET transistors , rectifiers, zeners, ; varactors, Schottky diodes, BJTs www.datasheetarchive.com/download/70346808-922803ZC/tps40200_pspice_transient_model.zip (nom.lib) |
Texas Instruments | 11/08/2011 | 145.05 Kb | ZIP | tps40200_pspice_transient_model.zip |
| transistors (BJTs) .lib "pwrmos.lib" ; Power MOSFETs .lib "xtal.lib" ; Quartz .lib" ; Bipolar transistors .lib "dc_prim.lib" ; Primitive models for DAC & ADC Schematic models .lib "diode.lib" ; Diodes .lib "darlngtn.lib" ; Darlington transistors .lib "igbt.lib" ; IGBT transistors .lib "jfet.lib" ; JFET transistors , rectifiers, zeners, ; varactors, Schottky diodes, BJTs www.datasheetarchive.com/download/70346808-922803ZC/tps40200_pspice_transient_model.zip (nom.lib) |
Texas Instruments | 11/08/2011 | 145.05 Kb | ZIP | tps40200_pspice_transient_model.zip |
| transistors (BJTs) .lib "pwrmos.lib" ; Power MOSFETs .lib "xtal.lib" ; Quartz .lib" ; Bipolar transistors .lib "dc_prim.lib" ; Primitive models for DAC & ADC Schematic models .lib "diode.lib" ; Diodes .lib "darlngtn.lib" ; Darlington transistors .lib "igbt.lib" ; IGBT transistors .lib "jfet.lib" ; JFET transistors , ; varactors, Schottky diodes, BJTs, ; JFETs, power BJTs, power MOSFETs, opamps www.datasheetarchive.com/files/spicemodels/misc/nom.lib |
Spice Models | 27/01/2010 | 3.84 Kb | LIB | nom.lib |
| bipolar transistors (BJTs) .lib "pwrmos.lib" ; Power MOSFETs .lib "xtal _misc.lib" ; Miscellaneous circuits .lib "bipolar.lib" ; Bipolar transistors .lib "dc .lib" ; Darlington transistors .lib "igbt.lib" ; IGBT transistors .lib "jfet.lib" ; JFET transistors .lib "linedriv.lib" ; Line Drivers, Receivers and Transceivers .lib , ; varactors, Schottky diodes, BJTs, ; JFETs, power BJTs, power MOSFETs, opamps www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/nom_mix.lib |
Spice Models | 29/07/2012 | 3.5 Kb | LIB | nom_mix.lib |
| .lib" ; Optocouplers .lib "pwrbjt.lib" ; Power bipolar transistors (BJTs) .lib "pwrmos transistors .lib "darlngtn.lib" ; Darlington transistors .lib "diode.lib" ; Diodes .lib "jfet.lib" ; JFET transistors .lib "igbt.lib" ; IGBT transistors .lib "opamp.lib" ; Linear ICs: op-amps, voltage comparators, ; and voltage .lib" ; Japanese diodes, rectifiers, zeners, ; varactors, Schottky diodes, BJTs www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/nom_ana.lib |
Spice Models | 29/07/2012 | 3.02 Kb | LIB | nom_ana.lib |
| transistors (BJTs) .lib "pwrmos.lib" ; Power MOSFETs .lib "xtal.lib" ; Quartz .lib" ; Bipolar transistors .lib "dc_prim.lib" ; Primitive models for DAC & ADC Schematic models .lib "diode.lib" ; Diodes .lib "darlngtn.lib" ; Darlington transistors .lib "igbt.lib" ; IGBT transistors .lib "jfet.lib" ; JFET transistors , ; varactors, Schottky diodes, BJTs, ; JFETs, power BJTs, power MOSFETs, opamps www.datasheetarchive.com/files/spicemodels/misc/nom_mix.lib |
Spice Models | 19/08/2008 | 3.79 Kb | LIB | nom_mix.lib |
| to drive an external low resistance NPN bipolar junction transistor (BJT). The DRIVE output provides typically 7 mA at 100 kHz typical switching frequency to drive the BJT. Features Operates from 0.7 to 9 V DC Ultra low operating supply current-typically 17 uA Uses external power BJT (kHz) Output voltage(V) Package Part type Power dissipation(mW) Remarks Switching transistor SA www.datasheetarchive.com/files/philips/pip/sa57255-xx_1.html |
Philips | 23/04/2003 | 8.58 Kb | HTML | sa57255-xx_1.html |
| designed to drive an external low resistance NPN bipolar junction transistor (BJT). Features Uses external power NPN BJT High efficiency-typically 83 pct. High precision output-typically +- 2 dissipation(mW) Remarks Switching transistor SA57251-20GW SA57251-20GW SA57251-20GW SA57251-20GW 2.4 DC-DC converters DC-DC Switching www.datasheetarchive.com/files/philips/pip/sa57251-xx_1.html |
Philips | 23/04/2003 | 8.64 Kb | HTML | sa57251-xx_1.html |
| has been in limited use for bipolar junction transistors (BJT). The NP package will be used . Since MOSFET die sizes are larger than BJT equivalents (for the same power output level), the NP www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6979.htm |
STMicroelectronics | 20/10/2000 | 12.48 Kb | HTM | 6979.htm |