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transistor BJT

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 AN-2337 When the transistor is , current available from the BJT, then there is a risk that the controller will hold the transistor in , depletion of this N- region and turns it into an insulator. The voltage withstand of the transistor in this condition is dependent on the insulation properties of the depleted region. When the transistor , transistor action) and b) the N- region has to be turned into a conductor. (a) happens very quickly but (b ... NXP Semiconductors
Original
datasheet

10 pages,
196.27 Kb

C2472 C2473 BJT Base Drive circuit bjt high voltage electric blanket high voltage diodes ionisation power BJT Bipolar Junction Transistor Transistor BJT High Current Low Capacitance bjt Drive Base BJT common emitter bjt AN-2337 BJT with V-I characteristics AN-2337 BJT characteristics AN-2337 APPCHP1 AN-2337 AN-2337 AN-2337 TEXT
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Abstract: light-activated circuit. Components Needed: 2N4400 2N4400 BJT, MC 14007 transistor array, Q4015L5 Q4015L5 Triac, Q4010LS2 Q4010LS2 SCR, XE2410 XE2410 24V-0.5A incandescent lamp, operational amplifier, photo transistor, photo resistor, or , transistor. These parameters appear in the forward active model for the BJT that relate the dependent , experimental understanding of the operation of the bipolar transistor and on relating the experimental , parameters that characterize the MOS transistor along with the physical parameters W and L. Most of these ... Original
datasheet

7 pages,
398.35 Kb

1N4148 2N4400 circuits using BJT design of triggering circuit of mosfet Photo SCR MOS Controlled Thyristor BJT characteristics BJT Transistors MC14007 mc 14007 Photo resistor bjt ic operational amplifier laser diode mosfet triggering circuit Q4015L5 bipolar junction transistor red laser pointer BJT IC Vce BJT amplifiers Q4010LS2 TEXT
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Abstract: transistor from the collector to the base. By assuming the BJT is unilateral, we have neglected this effect , understanding of the operation of the bipolar transistor and on relating the experimental performance to the models that were established in the lecture part of the course. Components Needed: 2N4400 2N4400 BJT , BJT Parameters The parameters IS , β, and VAF are key parameters that are used to chararize the operation of the bipolar junction transistor. These parameters appear in the forward active model for the ... Original
datasheet

5 pages,
398.69 Kb

TEXT
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Abstract: here. Bipolar Junction Transistor The bipolar junction transistor (BJT) was the first active , field effect transistor (FET) manufacturing process was perfected, it began competing with the BJT , areas of the BJT. An NPN transistor has a positively doped base and a negatively doped collector and , . . . . . . . 1 Bipolar Junction Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . , Field Effect Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... Texas Instruments
Original
datasheet

14 pages,
52.66 Kb

bipolar junction transistor germanium transistor pnp "P-Channel JFET" jfet differential transistor power BJT germanium transistors NPN bjt differential amplifier jfet discrete differential transistor pnp germanium bjt power BJT PNP BJT Driver pnp germanium low power bjt pnp germanium small signal bjt transistor BJT Driver SLOA026 Germanium Transistor BJT amplifiers "BJT Transistors" TRANSISTORS BJT list TEXT
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Abstract: . Bipolar Junction Transistor The bipolar junction transistor (BJT) was the first active semiconductor , effect transistor (FET) manufacturing process was perfected, it began competing with the BJT. Since , areas of the BJT. An NPN transistor has a positively doped base and a negatively doped collector and , . . . . Bipolar Junction Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction Field Effect Transistor . . ... Texas Instruments
Original
datasheet

10 pages,
102.22 Kb

germanium transistors NPN Mancini mosfet amp ic Germanium Transistor circuits using BJT power BJT BIPOLAR Junction TRANSISTOR jfet differential transistor "BJT Transistors" jfet discrete differential transistor power BJT PNP pnp germanium small signal bjt SLOA026A input output bjt npn transistor SLOA026A pnp germanium low power bjt SLOA026A pnp germanium bjt SLOA026A BJT amplifiers SLOA026A bjt differential amplifier SLOA026A TRANSISTORS BJT list SLOA026A SLOA026A SLOA026A TEXT
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Abstract: power BJT is turned on when the small base drive transistor is being turned on. On the contrary, the power BJT is turned ON by turning off the drive transistor in the fly-back driving method. However, an , Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea , resonant mode operation. Some recommendations for reducing the case temperature of the BJT are suggested , speed, low switching loss, low saturation voltage, and high voltage and current ratings. The transistor ... Fairchild Semiconductor
Original
datasheet

19 pages,
157.82 Kb

zvs flyback driver fairchild power bjt datasheet fly back transformer monitor crt flyback transformer KSD5072 KSD5702 power bjt Drive Base BJT KDS5072 POWER BJTs fairchild power bjt AN9009 AN9009 TRANSISTORS BJT list BJT isolated Base Drive circuit flyback transformer FBT 18 crt horizontal deflection circuit TEXT
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Abstract: the bipolar junction transistor's (BJT) VCE saturation. Choosing a BJT with a lower VCE saturation , Option 3 uses a MOSFET transistor instead of a BJT (see Figure 3). A MOSFET pulls the CM voltage closer , 1-MICROCONTROLLER FLAG Option 1 uses a general-purpose NPN transistor and three biasing resistors , of the transistor are biased at AVDD/2, the common-mode (CM) voltage. The collector is connected to the IOVDD of the codec, which can range from 1.8 V to 3.3 V. The transistor is normally off because ... Analog Devices
Original
datasheet

2 pages,
85.52 Kb

bipolar junction transistor AN-1056 advantages of microcontroller MMBT3904 ADAU1X61 ADAU1361 ADAU1761 bjt advantages and disadvantages BJT IC Vce small signal BJT transistor DISADVANTAGES OF TRANSISTOR headphone jack Transistor BJT High Current disadvantages of mosfet amplifier advantages and disadvantages power bjt advantages and disadvantages disadvantages of microcontroller TEXT
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Abstract: Darlington BJTs were also fabricated on the same wafer with an output to driver transistor ratio of 3:1 , short-circuited load at a collector bias of 4500 V, the 10 kV BJT shows a temperature-invariant, withstand time , . 3 shows distinct saturation (up to IC = 8 A) and quasisaturation regions, reminiscent of a Si BJT, combined with a very high current gain of 3400. The differential ron,sp for the Darlington BJT in the , discrete BJT, and also significantly lower than the unipolar limit for the n- collector region ... GeneSiC Semiconductor
Original
datasheet

4 pages,
1064.52 Kb

TEXT
datasheet frame
Abstract: the beginning of space a second look at BJT' may be in order. the 150 watt JANSR2N7270 JANSR2N7270 N-channel, s , (BJT) have been reliably used in power RDS(on) of .065 ohms at 34A.and the would have to fit a , . Power bipolar complementary due to the speed of the transistor. MOSFET, switch mode power supply , Number Polarity N-Channel NPN BJT. When these power supplies are pull circuits than large when , to the IRF120 IRF120 NCurrent ID = 5A IC = 5A evaluate the reevaluate the power BJT and its use in use ... Microsemi
Original
datasheet

1 pages,
20.37 Kb

to-39 transistors mosfet .5a 100v FSL130R 2N6437 2N6338 circuits using BJT npn power BJT JANSR2N7270 2N7272 2N7395 500 WATT smps JANS2N7372 smps 500 watt JANS2N73 power transistor bjt 100 a JANS2N5153 JANS2N5154 JANS2N7373 NPN Power BJT 100v power BJT pnp TEXT
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Abstract: run. The first using the standard Gummel-Poon BJT model and simple inductor chokes and a second using , approximately 100-200 MHz, the built-in SPICE BJT model, based on the Gummel Poon model, fails to accurately predict the real device performance. The BJT must be remodeled as a subcircuit (Table 1) in order to , the plane where the manufacturer measured the transistor s-parameters. LEC and LSP are RF chokes. The , emitter of the transistor (VIN 1 0 PWL.). Another possible method is to insert a current pulse somewhere ... Original
datasheet

7 pages,
93.48 Kb

2N5109 model BJT Spice models BJT Transistors DN414 DN5441 Inside the RF Power Transistor simple bjt circuit input output bjt npn transistor Intusoft ISSPICE 2N5109 bjt oscillator QN5109 TF011 B9112 2n5109 transistor 7432N 2N5109 spice power transistor bjt 1000 a DN4148 170NH TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
an external low resistance NPN bipolar junction transistor (BJT). The DRIVE output provides typically 7 mA at 100 kHz typical switching frequency to drive the BJT. Features Operates from 0.7 to 9 V DC Ultra low operating supply current-typically 17 uA Uses external power BJT transistor SA57255-20GW SA57255-20GW 2.4 DC-DC converters DC-DC Switching Regulator 3.8 0.7@1 mA 76 no
/datasheets/files/philips/pip/sa57255-xx_1.html
Philips 23/04/2003 8.58 Kb HTML sa57255-xx_1.html
to drive an external low resistance NPN bipolar junction transistor (BJT). Features control Uses external power NPN BJT High efficiency-typically 83 pct. High precision type Power dissipation(mW) Remarks Switching transistor SA57251-20GW SA57251-20GW 2.4 DC-DC
/datasheets/files/philips/pip/sa57251-xx_1.html
Philips 23/04/2003 8.64 Kb HTML sa57251-xx_1.html
semiconductors are the Power Diode, the power Bipolar Junction Transistor (BJT), the Thyristor (Triacs and SCRs), the Gate Turn-off Thyristor (GTO), the Power MOSFET, and the Insulated Gate Bipolar Transistor ) Darlington = 0.8V + V CE(sat) BJT and also the increased turn-off time - the power stage transistor can voltage ratings of the transistor (forward, V F and reverse, V DRM ) depend upon the thickness of ) APPLICATION NOTE 4/15 3 THE BIPOLAR TRANSISTOR see figure 6. 3.1 Current The current capability is defined
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3729-v1.htm
STMicroelectronics 25/05/2000 27.39 Kb HTM 3729-v1.htm
, the power Bipolar Junction Transistor (BJT), the Thyristor (Triacs and SCRs), the Gate Turn-off Thyristor (GTO), the Power MOSFET, and the Insulated Gate Bipolar Transistor (IGBT). 2 THE POWER DIODE the voltage ratings of the transistor (forward, V F and reverse, V DRM ) depend upon the thickness of DRM V DRM V F @ 12V I RM (A) APPLICATION NOTE 4/15 3 THE BIPOLAR TRANSISTOR see figure 6. 3.1 Current remains relatively constant with changing I C , and so the transistor can be considered as a current
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3729.htm
STMicroelectronics 20/10/2000 28.53 Kb HTM 3729.htm
[ INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR by P. Fichera 1/11 AN509/1293 AN509/1293 1. BJT In order to switch a BJT quickly and with low switching losses, minority carriers must be injected into and extracted from the base of the transistor very rapidly. 1.1 Turn-On Switching In terms of input signal, the transistor base- emitter junction can be schematically represented by a nanosecond). If the transistor is driven from a current source, the rate of rise of the base current is
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3726-v1.htm
STMicroelectronics 25/05/2000 14.68 Kb HTM 3726-v1.htm
Silicon RF BJT/SIEGET ® Silicon RF BJT/SIEGET ® SIEGET 25 Low Noise Amplifier with BFP420 BFP420 Transistor at 2.4GHz 81 K SIEGET 25 Silicon Bipolar Dielectric Resonator Oscillator (DRO) at 235 K Low-Noise Amplifier Optimized for Minimum Noise Figure at 1.9GHz using BFP420 BFP420 37 K Low-Noise Amplifier Transistor at 1.9 GHz 203 K 869 - 894 MHz Receiver Front End Downconverting to 116 MHz
/datasheets/files/infineon/products/35/35app3r.htm
Infineon 26/11/1998 4.8 Kb HTM 35app3r.htm
BEHAVIOUR by P. Fichera 1/11 AN509/1293 AN509/1293 1. BJT In order to switch a BJT quickly and with low switching losses, minority carriers must be injected into and extracted from the base of the transistor very rapidly. 1.1 Turn-On Switching In terms of input signal, the transistor base- emitter junction can be tenths of a nanosecond). If the transistor is driven from a current source, the rate of rise of the families. In particular Bipolar Junction Transistors (BJT) are considered as a representative of
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3726.htm
STMicroelectronics 20/10/2000 15.1 Kb HTM 3726.htm
is reduced. Now the P+ substrate, n-epi layer and P+ "emitter" form a BJT transistor and the to approximately the 2.7 power: (1) By combining the low conduction loss of a BJT gate bipolar transistor (IGBT) technology offers a combination of these attributes. MOSFETs are typical of a minority carrier device, such as a BJT. Click on figure to enlarge it -
/datasheets/files/motorola/design-n/ppd/html/psvol2-1/art01.htm
Motorola 25/11/1996 8.18 Kb HTM art01.htm
* * Version 1.1.0a * The Gummel-Poon BJT model does not model the * distributed resistance and capacitance of the base- * collector region. Normally this is not a significant * problem because most low-power RF parts have low * overall base-region the B-C junction of the BJT. This * is accomplished by setting the saturation current * (IS) of the diodes to 1/1000th that of the * transistor. This model's accuracy when the B-C * junction is
/datasheets/files/spicemodels/misc/spice_model_cd/vendor list/motorola/spice/rfbjt/mmbr931.lib
Spice Models 29/07/2012 2.4 Kb LIB mmbr931.lib
photo BJT has its own temperature corrections, which must be kept * as the transistor is electrically * * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter * * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter * * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter * * A = diode anode * K = diode cathode * C = BJT collector * B = BJT base * E = BJT emitter
/datasheets/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/opto.lib
Spice Models 29/07/2012 30.09 Kb LIB opto.lib