NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: , for example, of a loudspeaker with a transistor BC309. Besides that, with this circuit the limit , range. The constant current source is realized by the transistor T1, the diodes D1 and D2 as well as the , base of T1. The constant current of the transistor can be adjusted by the potentiometer R2. 3.3 mA , of 30 ms. These pulses are generated by the programmable unijunction transistor BRY56 BRY56. The emitted , (Figure 12) is amplified through a transistor stage by 20 dB. The gain is determined by the collector ... | Original |
7 pages, |
BAY 61 3stage darlington amplifier TCA971 TAA 761 TAA861 TAA 761 A BPX81 transistor bc238 tca 335 A tca965 TCA315 tda4050 TAA761 TCA335A LD261 BPX81 LD261 abstract |
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| Abstract: Central BC307 BC307 BC308 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307 BC307, BC308 BC308, and BC309 types are PNP Silicon Transistors manufactured by , (BC307 BC307) ICES VCE=25V (BC308 BC308, BC309) BVCES IC=10A (BC307 BC307) 50 BVCES IC=10A (BC308 BC308, BC309) 30 BVCEO IC=2.0mA (BC307 BC307) 45 BVCEO IC=2.0mA (BC308 BC308, BC309) 25 BVEBO IE=10A 5 VCE(SAT) IC=10mA, IB=0.5mA , (BC309) RG=2K, f=30Hz-15KHz hFE VCE=5.0V, IC=2.0mA BC307A BC307A BC308A BC308A BC309A BC309A MIN MAX 120 220 ... | Original |
2 pages, |
BC308 BC307C BC307B BC307 Bc308B, PNP BC309 BC309A BC309B Transistor BC307b transistor bc308 30Hz-15kHz BC308B BC308A BC308 PNP transistor download datasheet BC307A BC307 abstract |
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| Abstract: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 BC307 Vceo=-45V. • Low Noise : BC309 , BC308 BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 BC307 VcEO -45 V BC308 BC308 -25 BC309 -20 Emitter-Base Voltage BC307 BC307 Vebo -5 V BC308 BC308 -5 BC309 -5 Collector Current BC307 BC307 Ic -100 mA BC308 BC308 -100 BC309 -50 Emitter Current BC307 BC307 Ie 100 mA BC308 BC308 100 BC309 50 Collector Power ... | OCR Scan |
2 pages, |
BC309 BC308 bc307 pnp BC307 BC307/8/9 BC307/8/9 abstract |
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| Abstract: SEMICONDUCTOR BC307/8/9 BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N E K For Complementary , Collector-Base Voltage BC308 BC308 VCBO -30 BC309 Collector-Emitter Voltage BC308 BC308 VCEO -25 1. COLLECTOR 3. EMITTER V TO-92 -5 BC308 BC308 VEBO -5 V BC309 -5 BC307 BC307 -100 BC308 BC308 IC -100 BC309 mA -50 BC307 BC307 Emitter Current 3 -20 BC307 BC307 ... | Original |
2 pages, |
transistor BC309 BC309 BC308 transistor bc237 bc337 BC307 BC308 PNP transistor download datasheet datasheet abstract |
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| Abstract: TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 BC307 VCeo=-45V. • Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCe=-6V, Ic=-0.1mA, f=lkHz). • For Complementary , Collector-Base Voltage BC307 BC307 VcBO -50 V BC308 BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 BC307 VcEO -45 V BC308 BC308 -25 BC309 -20 Emitter-Base Voltage BC307 BC307 Vebo -5 V BC308 BC308 -5 BC309 -5 Collector Current BC307 BC307 Ic -100 mA BC308 BC308 -100 BC309 -50 Emitter Current BC307 BC307 Ie 100 mA BC308 BC308 100 ... | OCR Scan |
2 pages, |
BC309 BC308 BC307 BC307/8/9 BC307/8/9 abstract |
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| Abstract: BC239 BC239 BC239 BC239 BC307 BC307 BC307 BC307 BC307 BC307 BC308 BC308 BC308 BC308 BC308 BC308 BC309 BC309 BC309 BC847 BC847 , Si-npn-Planar-EpitaxieSF245 Si-npn-Planar-EpitaxieSF245 HF-Transistor Si-npn-Planar-EpitaxieSF357 Si-npn-Planar-EpitaxieSF357 Transistor Si-npn-Planar-EpitaxieSF358 Si-npn-Planar-EpitaxieSF358 Transistor Si-npn-Planar-EpitaxieSF359 Si-npn-Planar-EpitaxieSF359 Transistor Si-npn-Planar-EpitaxieSF369 Si-npn-Planar-EpitaxieSF369 Transistor Si-npn-Planar-EpitaxieSFE225 Si-npn-Planar-EpitaxieSFE225 HF-Transistor , Si-npn-Planar-EpitaxieSS216 Si-npn-Planar-EpitaxieSS216 Transistor Si-npn-Planar-EpitaxieSS218 Si-npn-Planar-EpitaxieSS218 Transistor Si-npn-Planar-EpitaxieSS219 Si-npn-Planar-EpitaxieSS219 Transistor Si-npn-Planar-EpitaxieSSE216 Si-npn-Planar-EpitaxieSSE216 Transistor Si-npn-Planar-EpitaxieSSE219 Si-npn-Planar-EpitaxieSSE219 Transistor Si-npn-Planar-EpitaxieSSY20 Si-npn-Planar-EpitaxieSSY20 ... | Original |
5 pages, |
SD601 BFY177 SD345 SU188 SU190 SU169 sf116 bd139 bd140 SU161 sd336 SD339 SF137 SD337 SU179 transistor SD335 BSY34 BSY34 abstract |
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| Abstract: BC307/308/309 BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Emitter Voltage VcES :BC307 BC307 -50 V :BC308/309 BC308/309 -30 V Collector-Emitter Voltage VcEO :BC307 BC307 -45 V :BC308/309 BC308/309 , VCe=-5V, lc=-0.2mA 10 dB :BC309 R,= 2kohm, f=1KHz 4 dB :BC309 NF Vce=-5V, ic=-0.2mA Rg=2kohm, f=30 , EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE 0 -2 -4 -6 -8 -10 -12 -14 -16 ... | OCR Scan |
2 pages, |
BC30S BC309 BC307 transistor 309 BC307/308/309 BC308/309 BC307/308/309 abstract |
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| Abstract: BC309 VCEO Collector Emitter Voltage 45 25 25 VCBO 50 30 30 Collector Base Voltage VEBO , Collector Emitter Breakdown Voltage BC307 BC307 45 BC308 BC308, BC309 25 Emitter Base Breakdown Voltage Collector , nA 15 nA VCES =50V, VBE =0, BC307 BC307 15 VCES =30V, VBE =0 BC308 BC308, BC309 VCES =50V, VBE =0 4 礎 4 礎 o TA =125 C VCES =30V, VBE =0, BC308 BC308, BC309 o TA =125 C DC Current Gain A B C BC307 BC307, BC308 BC308, BC309 A B C A B C Collector Emitter Saturation Voltage Base ... | Original |
5 pages, |
BC308 BC307 BC309 bc 357 transistor transistor bc 318 transistor BC 153 transistor BC 307 bc 357 transistor pin details BC 114 transistor datasheet abstract |
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| Abstract: ) DESCRIPTION SYMBOL BC307 BC307 BC308 BC308 BC309 VCEO Collector Emitter Voltage 45 25 25 VCBO 50 30 30 , IC=2mA,IB=0 Collector Emitter Breakdown Voltage BC307 BC307 45 BC308 BC308, BC309 25 Emitter Base Breakdown , , BC309 VCES =50V, VBE =0 4 礎 4 礎 o TA =125 C VCES =30V, VBE =0, BC308 BC308, BC309 o TA =125 C DC Current Gain A B C BC307 BC307, BC308 BC308, BC309 A B C A B C Collector Emitter , CHARACTERISTICS fT Transition Frequency BC307 BC307 BC308 BC308 BC309 f=50MHz BC 309 NF f=1MHz IC=0.2mA ... | Original |
5 pages, |
transistor BC 308 transistor BC 307 low noise transistor bc BC309 BC308 BC307 BC 114 transistor bc 309 b transistor bc 357 transistor datasheet datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 BC307/308/309 TRANSISTOR (PNP) TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. BASE Symbol Parameter Value IC BC307 BC307 BC308/309 BC308/309 Emitter-Base Voltage BC307 BC307 BC308/309 BC308/309 Collector Current -Continuous -45 -25 -6 -5 , BC307/BC308 BC307/BC308 BC309 VCE=-5V, IC=-0.2mA , f=30-15KHz, RG=2K BC309 pF 10 4 dB 4 hFE A ... | Original |
2 pages, |
BC309 bc307 BC307/308/309 BC307/308/309 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .alias BC309C BC557C BC557C BC557C BC557C pnp .alias BC338 BC338 BC338 BC338 BC337 BC337 BC337 BC337 npn .alias BC327A BC327A BC327A BC327A BC327 BC327 BC327 BC327 pnp .alias BCP54 BCP54 BCP54 BCP54 BC635 BC635 BC635 BC635 npn .alias 546B npn .alias BC550C BC550C BC550C BC550C BC547C BC547C BC547C BC547C npn .alias BC309A BC556A BC556A BC556A BC556A pnp .alias BC214 BC214 BC214 BC214 BC556B BC556B BC556B BC556B pnp .alias BCY72 BCY72 BCY72 BCY72 BC npn .alias Q2N3390 Q2N3390 Q2N3390 Q2N3390 BC547C BC547C BC547C BC547C npn .alias BCW89 BCW89 BCW89 BCW89 BC556A BC556A BC556A BC556A pnp .alias BC309 BC556B BC556B BC556B BC556B pnp .alias MMBT4403LT1 MMBT4403LT1 MMBT4403LT1 MMBT4403LT1 Q ZTX108C ZTX108C ZTX108C ZTX108C BC547C BC547C BC547C BC547C npn .alias BCX71g BC556A BC556A BC556A BC556A pnp .alias BC309B BC556B BC556B BC556B BC556B pnp .alias MMBT2907 MMBT2907 MMBT2907 MMBT2907 Q2N2907 Q2N2907 Q2N2907 Q2N2907 pnp * by their use. * * * 2.10.98 *From Philips SC04 "Small signal transistors 1991" * Base www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/simetrix/bipolar.lb |
Spice Models | 29/07/2012 | 31.39 Kb | LB | bipolar.lb |
| * TERMINALS: C B E * 350 Volt 1 Amp SiNPN Power Transistor 04-02-1996 Q1 1 2 3 QPWR .67 Q2 1 4 3 388 *MJE340 MJE340 MJE340 MJE340 MCE Power Transistor Subcircuit 1/30/96 * TERMINALS: C B E *Si 20.8W 300V 500m www.datasheetarchive.com/files/spicemodels/misc/modelos/mcebjt.lib |
Spice Models | 21/02/2008 | 197.99 Kb | LIB | mcebjt.lib |