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transistor BC309

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Abstract: , for example, of a loudspeaker with a transistor BC309. Besides that, with this circuit the limit , range. The constant current source is realized by the transistor T1, the diodes D1 and D2 as well as the , base of T1. The constant current of the transistor can be adjusted by the potentiometer R2. 3.3 mA , of 30 ms. These pulses are generated by the programmable unijunction transistor BRY56 BRY56. The emitted , (Figure 12) is amplified through a transistor stage by 20 dB. The gain is determined by the collector ... Original
datasheet

7 pages,
81.04 Kb

TCA335 TAA 761 TCA971 bpw 32 TCA105 tca 335 A TAA861 TCA315 TAA 761 A BPX81 transistor bc238 tca965 tda4050 TCA965 equivalent TCA335A LD261 BPX81 LD261 abstract
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Abstract: Central BC307 BC307 BC308 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307 BC307, BC308 BC308, and BC309 types are PNP Silicon Transistors manufactured by , (BC307 BC307) ICES VCE=25V (BC308 BC308, BC309) BVCES IC=10A (BC307 BC307) 50 BVCES IC=10A (BC308 BC308, BC309) 30 BVCEO IC=2.0mA (BC307 BC307) 45 BVCEO IC=2.0mA (BC308 BC308, BC309) 25 BVEBO IE=10A 5 VCE(SAT) IC=10mA, IB=0.5mA , (BC309) RG=2K, f=30Hz-15KHz hFE VCE=5.0V, IC=2.0mA BC307A BC307A BC308A BC308A BC309A BC309A MIN MAX 120 220 ... Original
datasheet

2 pages,
110.17 Kb

transistor bc308a BC307B BC309B BC309A BC309 BC307C transistor BC309 BC307 30Hz-15kHz Bc308B, PNP transistor bc308 BC308A BC308 PNP transistor download datasheet Transistor BC307b BC307 abstract
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Abstract: BC307/8/9 BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max. , UNIT F F 1 2 3 Collector-Base Voltage BC308 BC308 BC309 BC307 BC307 VCBO -30 -30 -45 , Collector-Emitter Voltage BC308 BC308 BC309 BC307 BC307 VCEO -25 -20 -5 V TO-92 Emitter-Base Voltage BC308 BC308 BC309 BC307 BC307 VEBO -5 -5 -100 V Collector Current BC308 BC308 BC309 BC307 BC307 IC -100 -50 100 mA Emitter Current BC308 BC308 BC309 IE 100 50 mA Collector Power Dissipation Junction ... Original
datasheet

2 pages,
30.05 Kb

bc308 bc307 datasheet abstract
datasheet frame
Abstract: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 BC307 Vceo=-45V. • Low Noise : BC309 , BC308 BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 BC307 VcEO -45 V BC308 BC308 -25 BC309 -20 Emitter-Base Voltage BC307 BC307 Vebo -5 V BC308 BC308 -5 BC309 -5 Collector Current BC307 BC307 Ic -100 mA BC308 BC308 -100 BC309 -50 Emitter Current BC307 BC307 Ie 100 mA BC308 BC308 100 BC309 50 Collector Power ... OCR Scan
datasheet

2 pages,
154.95 Kb

BC308 bc307 pnp BC309 BC307 BC237/238/239 BC307 abstract
datasheet frame
Abstract: TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 BC307 VCeo=-45V. • Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCe=-6V, Ic=-0.1mA, f=lkHz). • For Complementary , Collector-Base Voltage BC307 BC307 VcBO -50 V BC308 BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 BC307 VcEO -45 V BC308 BC308 -25 BC309 -20 Emitter-Base Voltage BC307 BC307 Vebo -5 V BC308 BC308 -5 BC309 -5 Collector Current BC307 BC307 Ic -100 mA BC308 BC308 -100 BC309 -50 Emitter Current BC307 BC307 Ie 100 mA BC308 BC308 100 ... OCR Scan
datasheet

2 pages,
139.53 Kb

BC309 BC308 BC307 BC307/8/9 BC307/8/9 abstract
datasheet frame
Abstract: SEMICONDUCTOR BC307/8/9 BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N E K For Complementary , Collector-Base Voltage BC308 BC308 VCBO -30 BC309 Collector-Emitter Voltage BC308 BC308 VCEO -25 1. COLLECTOR 3. EMITTER V TO-92 -5 BC308 BC308 VEBO -5 V BC309 -5 BC307 BC307 -100 BC308 BC308 IC -100 BC309 mA -50 BC307 BC307 Emitter Current 3 -20 BC307 BC307 ... Original
datasheet

2 pages,
64.75 Kb

transistor BC309 BC309 BC308 transistor bc237 bc337 BC307 BC308 PNP transistor download datasheet datasheet abstract
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Abstract: BC307/8/9 BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES ·Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max. , Voltage BC308 BC308 BC309 BC307 BC307 Collector-Emitter Voltage BC308 BC308 BC309 BC307 BC307 Emitter-Base Voltage BC308 BC308 BC309 BC307 BC307 Collector Current BC308 BC308 BC309 BC307 BC307 Emitter Current BC308 BC308 BC309 Collector Power Dissipation , ) BC308 BC308 BC309 BC307 BC307 Collector-Emitter Saturation Voltage IC=-100mA, IB=-5mA BC308 BC308 BC309 BC307 BC307 Base-Emitter , BC308 BC308 BC309 VCE=-6V, IC=-0.1mA NF Rg=10k, f=1kHz IC=-100mA, IC=-5mA BC308 BC308 BC309 VBE(ON) fT Cob VBE(sat ... Original
datasheet

2 pages,
352.4 Kb

BC307 complementary datasheet abstract
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Abstract: BC239 BC239 BC239 BC239 BC307 BC307 BC307 BC307 BC307 BC307 BC308 BC308 BC308 BC308 BC308 BC308 BC309 BC309 BC309 BC847 BC847 , Si-npn-Planar-EpitaxieSF245 Si-npn-Planar-EpitaxieSF245 HF-Transistor Si-npn-Planar-EpitaxieSF357 Si-npn-Planar-EpitaxieSF357 Transistor Si-npn-Planar-EpitaxieSF358 Si-npn-Planar-EpitaxieSF358 Transistor Si-npn-Planar-EpitaxieSF359 Si-npn-Planar-EpitaxieSF359 Transistor Si-npn-Planar-EpitaxieSF369 Si-npn-Planar-EpitaxieSF369 Transistor Si-npn-Planar-EpitaxieSFE225 Si-npn-Planar-EpitaxieSFE225 HF-Transistor , Si-npn-Planar-EpitaxieSS216 Si-npn-Planar-EpitaxieSS216 Transistor Si-npn-Planar-EpitaxieSS218 Si-npn-Planar-EpitaxieSS218 Transistor Si-npn-Planar-EpitaxieSS219 Si-npn-Planar-EpitaxieSS219 Transistor Si-npn-Planar-EpitaxieSSE216 Si-npn-Planar-EpitaxieSSE216 Transistor Si-npn-Planar-EpitaxieSSE219 Si-npn-Planar-EpitaxieSSE219 Transistor Si-npn-Planar-EpitaxieSSY20 Si-npn-Planar-EpitaxieSSY20 ... Original
datasheet

5 pages,
75.14 Kb

SD338 sf116 SD-340 SF136 sd335 transistor bf459 SD349 SD339 SU161 SD335 RFT SU179 SF137 SD337 SU111 sd336 BSY34 BSY34 abstract
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Abstract: BC307/308/309 BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Emitter Voltage VcES :BC307 BC307 -50 V :BC308/309 BC308/309 -30 V Collector-Emitter Voltage VcEO :BC307 BC307 -45 V :BC308/309 BC308/309 , VCe=-5V, lc=-0.2mA 10 dB :BC309 R,= 2kohm, f=1KHz 4 dB :BC309 NF Vce=-5V, ic=-0.2mA Rg=2kohm, f=30 , EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE 0 -2 -4 -6 -8 -10 -12 -14 -16 ... OCR Scan
datasheet

2 pages,
83.56 Kb

transistor BC309 BC30S BC309 bc308 BC307 308 transistor transistor 309 BC307/308/309 BC307/308/309 abstract
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Abstract: BC309 VCEO Collector Emitter Voltage 45 25 25 VCBO 50 30 30 Collector Base Voltage VEBO , Collector Emitter Breakdown Voltage BC307 BC307 45 BC308 BC308, BC309 25 Emitter Base Breakdown Voltage Collector , nA 15 nA VCES =50V, VBE =0, BC307 BC307 15 VCES =30V, VBE =0 BC308 BC308, BC309 VCES =50V, VBE =0 4 礎 4 礎 o TA =125 C VCES =30V, VBE =0, BC308 BC308, BC309 o TA =125 C DC Current Gain A B C BC307 BC307, BC308 BC308, BC309 A B C A B C Collector Emitter Saturation Voltage Base ... Original
datasheet

5 pages,
106.17 Kb

transistor BC 39 W 52 bc 308 transistor pin details BC307 BC308 BC309 T BC309 transistor 307 transistor BC 153 transistor BC 307 BC 170 transistor transistor bc 318 bc 357 transistor pin bc 357 transistor datasheet abstract
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