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transistor BC309

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Abstract: , for example, of a loudspeaker with a transistor BC309. Besides that, with this circuit the limit , range. The constant current source is realized by the transistor T1, the diodes D1 and D2 as well as the , base of T1. The constant current of the transistor can be adjusted by the potentiometer R2. 3.3 mA , of 30 ms. These pulses are generated by the programmable unijunction transistor BRY56 BRY56. The emitted , (Figure 12) is amplified through a transistor stage by 20 dB. The gain is determined by the collector ... Original
datasheet

7 pages,
81.04 Kb

TRANSISTOR BC 239 c TAA 761 bpw 32 TCA105 TCA971 TAA861 tca 335 A TCA315 TAA 761 A tca965 BPX81 transistor bc238 tda4050 TCA965 equivalent LD261 BPX81 LD261 abstract
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Abstract: Central BC307 BC307 BC308 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307 BC307, BC308 BC308, and BC309 types are PNP Silicon Transistors manufactured by , (BC307 BC307) ICES VCE=25V (BC308 BC308, BC309) BVCES IC=10A (BC307 BC307) 50 BVCES IC=10A (BC308 BC308, BC309) 30 BVCEO IC=2.0mA (BC307 BC307) 45 BVCEO IC=2.0mA (BC308 BC308, BC309) 25 BVEBO IE=10A 5 VCE(SAT) IC=10mA, IB=0.5mA , (BC309) RG=2K, f=30Hz-15KHz hFE VCE=5.0V, IC=2.0mA BC307A BC307A BC308A BC308A BC309A BC309A MIN MAX 120 220 ... Original
datasheet

2 pages,
110.17 Kb

transistor bc308a BC307 BC307B BC309B BC309A BC309 BC307C transistor BC309 30Hz-15kHz Bc308B, PNP transistor bc308 BC308A BC308 PNP transistor download datasheet Transistor BC307b BC307 abstract
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Abstract: BC307/8/9 BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max. , UNIT F F 1 2 3 Collector-Base Voltage BC308 BC308 BC309 BC307 BC307 VCBO -30 -30 -45 , Collector-Emitter Voltage BC308 BC308 BC309 BC307 BC307 VCEO -25 -20 -5 V TO-92 Emitter-Base Voltage BC308 BC308 BC309 BC307 BC307 VEBO -5 -5 -100 V Collector Current BC308 BC308 BC309 BC307 BC307 IC -100 -50 100 mA Emitter Current BC308 BC308 BC309 IE 100 50 mA Collector Power Dissipation Junction ... Original
datasheet

2 pages,
30.05 Kb

bc308 bc307 datasheet abstract
datasheet frame
Abstract: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 BC307 Vceo=-45V. • Low Noise : BC309 , BC308 BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 BC307 VcEO -45 V BC308 BC308 -25 BC309 -20 Emitter-Base Voltage BC307 BC307 Vebo -5 V BC308 BC308 -5 BC309 -5 Collector Current BC307 BC307 Ic -100 mA BC308 BC308 -100 BC309 -50 Emitter Current BC307 BC307 Ie 100 mA BC308 BC308 100 BC309 50 Collector Power ... OCR Scan
datasheet

2 pages,
154.95 Kb

BC309 BC308 bc307 pnp BC307 BC237/238/239 BC307 abstract
datasheet frame
Abstract: TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 BC307 VCeo=-45V. • Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCe=-6V, Ic=-0.1mA, f=lkHz). • For Complementary , Collector-Base Voltage BC307 BC307 VcBO -50 V BC308 BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 BC307 VcEO -45 V BC308 BC308 -25 BC309 -20 Emitter-Base Voltage BC307 BC307 Vebo -5 V BC308 BC308 -5 BC309 -5 Collector Current BC307 BC307 Ic -100 mA BC308 BC308 -100 BC309 -50 Emitter Current BC307 BC307 Ie 100 mA BC308 BC308 100 ... OCR Scan
datasheet

2 pages,
139.53 Kb

BC309 BC308 BC307 BC307/8/9 BC307/8/9 abstract
datasheet frame
Abstract: SEMICONDUCTOR BC307/8/9 BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N E K For Complementary , Collector-Base Voltage BC308 BC308 VCBO -30 BC309 Collector-Emitter Voltage BC308 BC308 VCEO -25 1. COLLECTOR 3. EMITTER V TO-92 -5 BC308 BC308 VEBO -5 V BC309 -5 BC307 BC307 -100 BC308 BC308 IC -100 BC309 mA -50 BC307 BC307 Emitter Current 3 -20 BC307 BC307 ... Original
datasheet

2 pages,
64.75 Kb

transistor BC309 BC309 BC308 transistor bc237 bc337 BC307 BC308 PNP transistor download datasheet datasheet abstract
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Abstract: BC307/8/9 BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES ·Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max. , Voltage BC308 BC308 BC309 BC307 BC307 Collector-Emitter Voltage BC308 BC308 BC309 BC307 BC307 Emitter-Base Voltage BC308 BC308 BC309 BC307 BC307 Collector Current BC308 BC308 BC309 BC307 BC307 Emitter Current BC308 BC308 BC309 Collector Power Dissipation , ) BC308 BC308 BC309 BC307 BC307 Collector-Emitter Saturation Voltage IC=-100mA, IB=-5mA BC308 BC308 BC309 BC307 BC307 Base-Emitter , BC308 BC308 BC309 VCE=-6V, IC=-0.1mA NF Rg=10k, f=1kHz IC=-100mA, IC=-5mA BC308 BC308 BC309 VBE(ON) fT Cob VBE(sat ... Original
datasheet

2 pages,
352.4 Kb

datasheet abstract
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Abstract: BC239 BC239 BC239 BC239 BC307 BC307 BC307 BC307 BC307 BC307 BC308 BC308 BC308 BC308 BC308 BC308 BC309 BC309 BC309 BC847 BC847 , Si-npn-Planar-EpitaxieSF245 Si-npn-Planar-EpitaxieSF245 HF-Transistor Si-npn-Planar-EpitaxieSF357 Si-npn-Planar-EpitaxieSF357 Transistor Si-npn-Planar-EpitaxieSF358 Si-npn-Planar-EpitaxieSF358 Transistor Si-npn-Planar-EpitaxieSF359 Si-npn-Planar-EpitaxieSF359 Transistor Si-npn-Planar-EpitaxieSF369 Si-npn-Planar-EpitaxieSF369 Transistor Si-npn-Planar-EpitaxieSFE225 Si-npn-Planar-EpitaxieSFE225 HF-Transistor , Si-npn-Planar-EpitaxieSS216 Si-npn-Planar-EpitaxieSS216 Transistor Si-npn-Planar-EpitaxieSS218 Si-npn-Planar-EpitaxieSS218 Transistor Si-npn-Planar-EpitaxieSS219 Si-npn-Planar-EpitaxieSS219 Transistor Si-npn-Planar-EpitaxieSSE216 Si-npn-Planar-EpitaxieSSE216 Transistor Si-npn-Planar-EpitaxieSSE219 Si-npn-Planar-EpitaxieSSE219 Transistor Si-npn-Planar-EpitaxieSSY20 Si-npn-Planar-EpitaxieSSY20 ... Original
datasheet

5 pages,
75.14 Kb

SU169 bd139 bd140 sf116 SD-340 SF136 sd335 transistor bf459 SD339 SU161 SU179 SD335 RFT SF137 SD337 sd336 SU111 BSY34 BSY34 abstract
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Abstract: BC307/308/309 BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Emitter Voltage VcES :BC307 BC307 -50 V :BC308/309 BC308/309 -30 V Collector-Emitter Voltage VcEO :BC307 BC307 -45 V :BC308/309 BC308/309 , VCe=-5V, lc=-0.2mA 10 dB :BC309 R,= 2kohm, f=1KHz 4 dB :BC309 NF Vce=-5V, ic=-0.2mA Rg=2kohm, f=30 , EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE 0 -2 -4 -6 -8 -10 -12 -14 -16 ... OCR Scan
datasheet

2 pages,
83.56 Kb

BC30S BC309 BC307 308 transistor transistor 309 BC307/308/309 BC307/308/309 abstract
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Abstract: BC309 VCEO Collector Emitter Voltage 45 25 25 VCBO 50 30 30 Collector Base Voltage VEBO , Collector Emitter Breakdown Voltage BC307 BC307 45 BC308 BC308, BC309 25 Emitter Base Breakdown Voltage Collector , nA 15 nA VCES =50V, VBE =0, BC307 BC307 15 VCES =30V, VBE =0 BC308 BC308, BC309 VCES =50V, VBE =0 4 礎 4 礎 o TA =125 C VCES =30V, VBE =0, BC308 BC308, BC309 o TA =125 C DC Current Gain A B C BC307 BC307, BC308 BC308, BC309 A B C A B C Collector Emitter Saturation Voltage Base ... Original
datasheet

5 pages,
106.17 Kb

BC308 BC307 transistor 307 T BC309 BC309 transistor bc 318 transistor BC 153 transistor BC 307 BC 170 transistor bc 357 transistor pin bc 357 transistor pin details bc 357 transistor BC 114 transistor datasheet abstract
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