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transistor BC309

Catalog Datasheet MFG & Type PDF Document Tags

TAA761A

Abstract: TDA4050B , for example, of a loudspeaker with a transistor BC309. Besides that, with this circuit the limit , range. The constant current source is realized by the transistor T1, the diodes D1 and D2 as well as the , base of T1. The constant current of the transistor can be adjusted by the potentiometer R2. 3.3 mA , of 30 ms. These pulses are generated by the programmable unijunction transistor BRY56. The emitted , (Figure 12) is amplified through a transistor stage by 20 dB. The gain is determined by the collector
Siemens
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BPX81 TCA335A TAA761A TDA4050B BPW32 TAA761 FLH101 LD261

BC307

Abstract: BC308 SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , : BC309 NF=0.2dB(Typ.), 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz). â'¢ For Complementary with NPN type , BC307 VcBO -50 V BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 VcEO -45 V BC308 -25 BC309 -20 Emitter-Base Voltage BC307 Vebo -5 V BC308 -5 BC309 -5 Collector Current BC307 Ic -100 mA BC308 -100 BC309 -50 Emitter Current BC307 Ie 100 mA BC308 100 BC309 50
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bc3078 bc307 pnp BC308 PNP transistor BC307 complementary BC237/238/239 100MH

bc307

Abstract: BC308 BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES ·Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max , Voltage BC308 BC309 BC307 Collector-Emitter Voltage BC308 BC309 BC307 Emitter-Base Voltage BC308 BC309 BC307 Collector Current BC308 BC309 BC307 Emitter Current BC308 BC309 Collector Power Dissipation , ) BC308 BC309 BC307 Collector-Emitter Saturation Voltage IC=-100mA, IB=-5mA BC308 BC309 BC307 Base-Emitter , BC308 BC309 VCE=-6V, IC=-0.1mA NF Rg=10k, f=1kHz IC=-100mA, IC=-5mA BC308 BC309 VBE(ON) fT Cob VBE(sat
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BC308

Abstract: BC308B Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by , =45V (BC307) ICES VCE=25V (BC308, BC309) BVCES IC=10A (BC307) 50 BVCES IC=10A (BC308, BC309) 30 BVCEO IC=2.0mA (BC307) 45 BVCEO IC=2.0mA (BC308, BC309) 25 BVEBO IE=10A 5 VCE(SAT) IC=10mA, IB , =0.2mA (BC309) RG=2K, f=30Hz-15KHz hFE VCE=5.0V, IC=2.0mA BC307A BC308A BC309A MIN MAX 120 220
Central Semiconductor
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BC307B BC308B BC309B BC307C Transistor BC307b BC308 PNP transistor download datasheet transistor bc308 Bc308B, PNP 30Hz-15kHz BC308C

BC307

Abstract: BC308 TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES â'¢ High Voltage : BC307 VCeo=-45V. â'¢ Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCe=-6V, Ic=-0.1mA, f=lkHz). â'¢ For , Collector-Base Voltage BC307 VcBO -50 V BC308 -30 BC309 -30 Collector-Emitter Voltage BC307 VcEO -45 V BC308 -25 BC309 -20 Emitter-Base Voltage BC307 Vebo -5 V BC308 -5 BC309 -5 Collector Current BC307 Ic -100 mA BC308 -100 BC309 -50 Emitter Current BC307 Ie 100 mA BC308 100
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BC307

Abstract: BC308 PNP transistor download datasheet SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N E K For Complementary , Collector-Base Voltage BC308 VCBO -30 BC309 Collector-Emitter Voltage BC308 VCEO -25 1. COLLECTOR 3. EMITTER V TO-92 -5 BC308 VEBO -5 V BC309 -5 BC307 -100 BC308 IC -100 BC309 mA -50 BC307 Emitter Current 3 -20 BC307 Collector
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transistor bc237 bc337 transistor BC309 BC237

bc307

Abstract: bc308 BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max , UNIT F F 1 2 3 Collector-Base Voltage BC308 BC309 BC307 VCBO -30 -30 -45 , Collector-Emitter Voltage BC308 BC309 BC307 VCEO -25 -20 -5 V TO-92 Emitter-Base Voltage BC308 BC309 BC307 VEBO -5 -5 -100 V Collector Current BC308 BC309 BC307 IC -100 -50 100 mA Emitter Current BC308 BC309 IE 100 50 mA Collector Power Dissipation Junction
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transistor BC 458

Abstract: Transistor BC 308C products >> Home find products space space space BC309 Products groups PNP Epitaxial Silicon Transistor , BC307/308/309 BC307/308/309 Switching and Amplifier Applications · Low Noise: BC309 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , space space space BC307 Products groups PNP Epitaxial Silicon Transistor Analog and Mixed Signal , applications q Low Noise: BC309 New products Product selection and parametric search back to top
Fairchild Semiconductor
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transistor BC 458 Transistor BC 308C BC 2001 transistor BC307BTA BC308/309 BC238/239 BC237/238 BC239 BC308CBU BC308BBU

BC307

Abstract: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 â'¢ LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9 Emitter-Base , Figure :BC307/308 :BC309 :BC309 Cebo Cebo NF fr NF V ce = â'" 4 5 V , lB=0 V ce = - 25V , â  ?Tb4145 0 025 05 4 bl7 â  BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR
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transistor SD335

Abstract: SF126 BC239 BC239 BC307 BC307 BC307 BC308 BC308 BC308 BC309 BC309 BC309 BC847 , Si-npn-Planar-EpitaxieSF245 HF-Transistor Si-npn-Planar-EpitaxieSF357 Transistor Si-npn-Planar-EpitaxieSF358 Transistor Si-npn-Planar-EpitaxieSF359 Transistor Si-npn-Planar-EpitaxieSF369 Transistor Si-npn-Planar-EpitaxieSFE225 HF-Transistor , Si-npn-Planar-EpitaxieSS216 Transistor Si-npn-Planar-EpitaxieSS218 Transistor Si-npn-Planar-EpitaxieSS219 Transistor Si-npn-Planar-EpitaxieSSE216 Transistor Si-npn-Planar-EpitaxieSSE219 Transistor Si-npn-Planar-EpitaxieSSY20
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SU111 SF137 SU161 SU169 SU179 transistor SD335 SF126 SF127 SF128 SD337 sd336 SC116 SC117 SC118 SC119 SC236 SC237

bc 357 transistor datasheet

Abstract: bc 309 b transistor ) DESCRIPTION SYMBOL BC307 BC308 BC309 VCEO Collector Emitter Voltage 45 25 25 VCBO 50 30 30 , BVCEO IC=2mA,IB=0 Collector Emitter Breakdown Voltage BC307 45 BC308, BC309 25 Emitter Base , BC308, BC309 VCES =50V, VBE =0 4 µA 4 µA o TA =125 C VCES =30V, VBE =0, BC308, BC309 o TA =125 C DC Current Gain A B C BC307, BC308, BC309 A B C A B C Collector , CHARACTERISTICS fT Transition Frequency BC307 BC308 BC309 f=50MHz BC 309 NF f=1MHz IC
Continental Device India
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bc 357 transistor datasheet bc 309 b transistor bc 357 transistor BC 114 transistor transistor 307 transistor BC 307 C-120

BC 114 transistor

Abstract: bc 357 transistor pin details BC309 VCEO Collector Emitter Voltage 45 25 25 VCBO 50 30 30 Collector Base Voltage VEBO , =0 Collector Emitter Breakdown Voltage BC307 45 BC308, BC309 25 Emitter Base Breakdown Voltage Collector , nA 15 nA VCES =50V, VBE =0, BC307 15 VCES =30V, VBE =0 BC308, BC309 VCES =50V, VBE =0 4 µA 4 µA o TA =125 C VCES =30V, VBE =0, BC308, BC309 o TA =125 C DC Current Gain A B C BC307, BC308, BC309 A B C A B C Collector Emitter Saturation
Continental Device India
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bc 357 transistor pin details bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor CDIL BC307
Abstract: BC309 VCEO Collector Emitter Voltage 45 25 25 VCBO Collector Base Voltage 50 30 30 VEBO , BVCEO IC=2mA,IB=0 Collector Emitter Breakdown Voltage BC307 45 BC308, BC309 25 Emitter Base , UNITS V V 5 V VCES =50V, VBE =0 15 nA BC308, BC309 VCES =30V, VBE =0 15 , , BC308, BC309 o TA =125 C DC Current Gain A B C BC307, BC308, BC309 A B C A B C , CHARACTERISTICS fT Transition Frequency BC307 BC308 BC309 f=50MHz BC 309 NF f=1MHz IC Continental Device India
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bc308

Abstract: BC307 CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC307/308/309 TRANSISTOR (PNP) TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. BASE Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous -45 -25 -6 , =2K BC307/BC308 BC309 VCE=-5V, IC=-0.2mA , f=30-15KHz, RG=2K BC309 pF 10 4 dB 4 hFE A
HAROM
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30-15KH

BC307

Abstract: transistor 309 BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS â'¢ LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Emitter Voltage VcES :BC307 -50 V :BC308/309 -30 V Collector-Emitter Voltage VcEO :BC307 -45 V :BC308 , PF Noise Figure :BC307/308 NF VCe=-5V, lc=-0.2mA 10 dB :BC309 R,= 2kohm, f=1KHz 4 dB :BC309 , Respective Manufacturer BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER
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transistor 309 308 transistor BC30S 00ES055

BC308A

Abstract: Transistor BC 308C BC307/308/309 BC307/308/309 Switching and Amplifier Applications · Low Noise: BC309 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , : BC307/308 : BC309 : BC309 VCE= -5V, IC= -0.2mA, RG=2K, f=1KHz VCE= -5V, IC= -0.2mA RG=2K, f=30~15KHz 10 , INVESTORS | Sitema MY FA Home >> Find products >> PNP Epitaxial Silicon Transistor Contents , datasheet Design center Low Noise: BC309 This page Print version back to top Product status/pricing
Fairchild Semiconductor
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BC308BTA BC308BU BC308TA BC308TAR BC308ABU BC308ATA

BC307

Abstract: BC308 BC307/308/309 BC307/308/309 Switching and Amplifier Applications · Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309 Value Units -50 -30 V V -45 , Noise Figure : BC307/308 : BC309 : BC309 -0.55 VCE= -5V, IC= -0.2mA, RG=2K, f=1KHz VCE= -5V
Fairchild Semiconductor
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309 IC

bc307

Abstract: BC309 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR (PNP) TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. BASE Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous -45 -25 -6 -5 , =2K BC307/BC308 BC309 VCE=-5V, IC=-0.2mA , f=30-15KHz, RG=2K BC309 pF 10 4 dB 4 hFE A
Jiangsu Changjiang Electronics Technology
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BC307

Abstract: bc307bta BC307/308/309 BC307/308/309 Switching and Amplifier Applications · Low Noise: BC309 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , : BC307/308 : BC309 : BC309 VCE= -5V, IC= -0.2mA, RG=2K, f=1KHz VCE= -5V, IC= -0.2mA RG=2K, f=30~15KHz 10 , INVESTORS | Sitema MY FA Home >> Find products >> PNP Epitaxial Silicon Transistor Contents , datasheet Design center Low Noise: BC309 This page Print version back to top Product status/pricing
Fairchild Semiconductor
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BC307BBU BC307BTF BC307BTFR BC307BU BC307CBU BC307ABU
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR (PNP) TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) 3. EMITTER Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous -45 , =2Kâ"¦ BC307/BC308 BC309 VCE=-5V, IC=-0.2mA , f=30-15KHz, RG=2Kâ"¦ BC309 pF 10 4 dB 4 hFE Jiangsu Changjiang Electronics Technology
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