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transistor A4t

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BF982 BF982 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected intended for VHF applications, such as VHF television tuners, FM tuners, with 12 V supply voltage. ' This MOS-FET tetrode is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. QUICK REFERENCE , □DBS'ïSB A4T This Material Copyrighted By Its Respective Manufacturer BF982 BF982 _A RATINGS Limiting values ... OCR Scan
datasheet

3 pages,
62.71 Kb

transistor A4t 45 transistor a4t 15 MARKING A4T A4t 65 transistor A4t 17 BF982 transistor A4t 35 A4t transistor transistor A4t TEXT
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Abstract: 00MDL5S 00MDL5S Ô4T 5-61 This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor , -226 SOIC-16 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up , Copyrighted By Its Respective Manufacturer in ev r-co a a. < in CM h-co NPN Switching Transistor , Its Respective Manufacturer NPN Switching Transistor (continued) CO >1 IO en > ■o D GO Is* cn , This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor (continued) AC ... OCR Scan
datasheet

6 pages,
191.79 Kb

SOIC-16 MMPQ3725 LB 122 transistor LB 122 NPN TN3725 TN3725A TEXT
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Abstract: Specification PowerMOS transistor BUK436-800A/B BUK436-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , PowerMOS transistor BUK436-800A/B BUK436-800A/B STATIC CHARACTERISTICS Tmi, = 25 'C unless otherwise specified SYMBOL , DObBIDfl 41T BHPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436-800A/B BUK436-800A/B t/s , ; 6 i • S I -—; I I ■4.t â ... OCR Scan
datasheet

5 pages,
171.58 Kb

BUK436-800B BUK436-800A BUK436-800A/B TEXT
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Abstract: Specification PowerMOS transistor BUK436-800A/B BUK436-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436-800A/B BUK436-800A/B STATIC , 7110fi2b DObBIDfl 41T BHPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436 BUK436 , ; 6 i • S I -—; I I ■4.t â ... OCR Scan
datasheet

5 pages,
171.58 Kb

BUK436-800B BUK436-800A bsh 13 - n1 BUK436-800A/B TEXT
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Abstract: Respective Manufacturer bSE T> ■ 7110flEb GübSTHS Ö4T U.H.F. power transistor PHILIPS INTERNATIONAL , b5E D m VllDÔSb DQbSTBl im ■ PHIN PHILIPS INTERNATIONAL BLU30/12 BLU30/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the , matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange , Copyrighted By Its Respective Manufacturer PHILIPS INTERNATIONAL U.H.F. power transistor bSE T> TllDÛSb ... OCR Scan
datasheet

8 pages,
190.27 Kb

transistor A4t 85 transistor A4t 45 BLU30/12 TEXT
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Abstract: Specification PowerMOS transistor BUK436-800A/B BUK436-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , transistor BUK436-800A/B BUK436-800A/B STATIC CHARACTERISTICS Tmi, = 25 'C unless otherwise specified SYMBOL PARAMETER , Specification PowerMOS transistor BUK436-800A/B BUK436-800A/B t/s Fig. 4. Transient thermal impedance. Zthimb ° ffl , ■4.t •4.1 [ 4.4 i i I ! 4A : i i ... OCR Scan
datasheet

5 pages,
171.58 Kb

RFT Semiconductors BUK436-800B BUK436-800A bsh 13 - n1 diode RP 6040 BUK436-800A/B TEXT
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Abstract: ETK85-050 ETK85-050(75A) , , ': one Transistor Pc 350 W Pc - W ft S SB £ S Ti + 150 'C « & ÌS. Jt Tstg -40—4-125 X M 9 m , Characteristics Items Symbols Test Conditions Min Typ Max Units S» fi ÎA Rth(j-c) Transistor 0.35 •C , 80 100 120 îg^glîiâlï T] [TC) Switching Time Transient Thermal Resistance (Transistor) 100 80 , |í"J± ... OCR Scan
datasheet

5 pages,
259.52 Kb

Transistor B29 B-28 B-30 B-31 CA-60 equivalent Diode B29 FSIM M102 smme T151 T760 ti 50AA t460 transistor ETK85-050 TEXT
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Abstract: V.H.F. power transistor bTE T> m bb53^3]i ODSÖTSl Û4T BLV25 BLV25 IAPX RATINGS Limiting values in , TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters , €¢ gold-metallization ensures excellent reliability. The transistor has a % in 6-tead flange envelope with a ceramic , . power transistor b^E D ■ bb53T31 00Bflcì53 blE HAPX BLV ZD A 40 typ , capacitor (ATCa); except for C2 these capacitors are placed 7 mm from transistor edge C8 = C10 = 470 pF ... OCR Scan
datasheet

8 pages,
335.8 Kb

multilayer rf 2222 BLV25 blv 33 transistor TEXT
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Abstract: 0 Na tional Semiconductor" May 1996 NDS8410 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices , Charge 5.6 nC Q* Gate-Drain Charge 14 nC hS01130 003^030 Û4T ■ 4'3 This Material ... OCR Scan
datasheet

6 pages,
184.84 Kb

NDS8410 TEXT
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Abstract: 5 7 . SGS-1H 0 MS 0 N !IUi@ TOMn©i S D 1727 (T H X 15) RF & MICROW AVE TRANSISTO RS HF SSB APPLIC ATIO N S OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION P o u t = 150 W PEP MIN. WITH 14 dB GAIN PIN CONNECTION 1 uJ 4 A •* o- DESCRIPTION The SD1727 SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB , 13 V ¿ 7 7 SCS-THOMSON _ * 7 a. M ISeœJiSTiM O®® 7 ^ 2 3 7 GG7Dhflc Û4T i 100 ... OCR Scan
datasheet

7 pages,
146.26 Kb

TEXT
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