NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: BF982 BF982 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected intended for VHF applications, such as VHF television tuners, FM tuners, with 12 V supply voltage. ' This MOS-FET tetrode is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. QUICK REFERENCE , â-¡DBS'ïSB A4T This Material Copyrighted By Its Respective Manufacturer BF982 BF982 _A RATINGS Limiting values ... | OCR Scan |
3 pages, |
transistor A4t 45 transistor A4t 17 A4t 65 MARKING A4T BF982 A4t transistor transistor A4t BF982 abstract |
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| Abstract: SIEMENS BUZ 50 A SIPMOS ® Power Transistor • N channel • Enhancement mode Type vDS Id "DS(on) Package Ordering Code BUZ 50 A 1000 V 2.5 A 5 a TO-220 AB C67078-A1307-A3 C67078-A1307-A3 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Vbs 1000 V Drain-gate voltage f?GS = 20 k£2 ^DGR 1000 Continuous drain current 7"c = 25 °C b 2.5 A Pulsed drain current Tc = 25 °C fopuls 10 Gate source voltage , 000417=5 A4T 07.96 This Material Copyrighted By Its Respective Manufacturer SIEMENS BUZ 50 A Typ. ... | OCR Scan |
9 pages, |
417S A4t 65 diode a4t transistor A4t 16 transistor A4t 2d A4t 07 C67078-A1307-A3 transistor A4t A4t transistor transistor A4t 45 C67078-A1307-A3 abstract |
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| Abstract: power, high-speed QCMOS™ technology • Military product compliant to MIL-STD-883 MIL-STD-883 6-Transistor cell for , high-performance CMOS process, and it is based on a 6-transistor cell design for high reliability of data , ( ZIP 1« ) A9 3 2 INDEX 4 ) A11 5 6 ) AO 7 8 > A2 A3 X 4 9 10 > A4 A4T] 5 11 ... | OCR Scan |
8 pages, |
transistor A4t 17 A4t transistor transistor A4t 35 transistor A4t QS8769 QS8769 abstract |
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| Abstract: c68PH (DO34) BAV23S BAV23S L31 SOT23 BZV13 BZV13 BZV13 BZV13 SOD68 (DO34) BAV70 BAV70 A4p; A4t SOT23 BZV14 BZV14 BZV14 BZV14 SOD68 (DO34) BAV70S BAV70S A4t SC-88/SOT363 SC-88/SOT363 BZV37 BZV37 BZV37 BZV37 SOD68 (DO34 , A4p BAV70 BAV70 SOT23 B5 BZX399-C2V7 BZX399-C2V7 SC-76/SOD323 SC-76/SOD323 A4t BAV70 BAV70 SOT23 B6 BZX399-C3V0 BZX399-C3V0 SC-76/SOD323 SC-76/SOD323 A4t BAV70S BAV70S SC-88/SOT363 SC-88/SOT363 B7 BZX399-C3V3 BZX399-C3V3 SC-76/SOD323 SC-76/SOD323 A51 PH ... | Original |
39 pages, |
marking z2p transistor A4t T1A SOT23 marking z3p T2D 70 diode DIODE C18 ph C18 ph diode sot363 13t V10-40 A4T SOT23 T2D 79 diode A6t SOT23 transistor t04 sot23 1n4148 sot23 1N821 1N821A 1N821 abstract |
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| Abstract: (DO34) BAV23S BAV23S L31 SOT23 BZV13 BZV13 BZV13 BZV13 SOD68 (DO34) BAV70 BAV70 A4p; A4t SOT23 BZV14 BZV14 BZV14 BZV14 SOD68 (DO34) BAV70S BAV70S A4t SC-88/SOT363 SC-88/SOT363 BZV37 BZV37 BZV37 BZV37 SOD68 (DO34 , A4p BAV70 BAV70 SOT23 B5 BZX399-C2V7 BZX399-C2V7 SC-76/SOD323 SC-76/SOD323 A4t BAV70 BAV70 SOT23 B6 BZX399-C3V0 BZX399-C3V0 SC-76/SOD323 SC-76/SOD323 A4t BAV70S BAV70S SC-88/SOT363 SC-88/SOT363 B7 BZX399-C3V3 BZX399-C3V3 SC-76/SOD323 SC-76/SOD323 A51 PH ... | Original |
40 pages, |
marking z8p t06 marking sot23 BZX79-C47 Transistor z3p marking z4p PH C5V1 marking Z7 SC-76 Y4p sot23 marking code DIODE marking S6 89 DIODE C18 ph Y4P marking code sot23 marking A1T sot23 transistor marking xg datasheet abstract |
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| Abstract: C33PH (DO34) BAV23S BAV23S L31 SOT23 BZV13 BZV13 BZV13 BZV13 SOD68 (DO34) BAV70 BAV70 A4p; A4t SOT23 BZV14 BZV14 BZV14 BZV14 SOD68 (DO34) BAV70S BAV70S A4t SC-88/SOT363 SC-88/SOT363 BZV37 BZV37 BZV37 BZV37 SOD68 (DO34 , A4p BAV70 BAV70 SOT23 B5 BZX399-C2V7 BZX399-C2V7 SC-76/SOD323 SC-76/SOD323 A4t BAV70 BAV70 SOT23 B6 BZX399-C3V0 BZX399-C3V0 SC-76/SOD323 SC-76/SOD323 A4t BAV70S BAV70S SC-88/SOT363 SC-88/SOT363 B7 BZX399-C3V3 BZX399-C3V3 SC-76/SOD323 SC-76/SOD323 A51 PH ... | Original |
130 pages, |
Marking code 44t PH 33D ph c15 diode BZV85/C18 ph diode datasheet A6t SOT23 Transistor z1p transistor marking codes A4p PH 33 G DIODE V10-20 DIODE S4 77A C18 ph diode datasheet 33G PH DIODE T2D DIODE 1N821 1N821A 1N821 abstract |
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| Abstract: vz0603m140agt VZ1206M260AGT VZ0402M260AGT High Frequency Devices-Band Pass Filter-RFBPF2520120A1/A2/A3/A4T How to Order RF BPF 252012 , C 1.20 ± 0.10 mm A W 0.50 ± 0.20 mm B A T RFBPF2520120A1/A2/A3/A4T Series ... | Original |
40 pages, |
usb poart varistor 10K 680 RFANT3216120AT marking code a6t f antenna balun 2.4ghz Antenna-RFANT3216120A RGFRA1903041A1T RFANT3216090A0T transistor A4t WL160808G82NJ WL100505GR10 WL100505G3N9 WALSIN 1903 IEEE802 IEEE802 abstract |
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| Abstract: , G11 Digital positive power supply A0_T, A1_T, A2_T, A3_T, A4_T, A5_T, A6_T, A7_T, A8_T, A9_T , diode-mounted transistor is linearly dependent on the temperature. Since the characteristic of the diode may , junction temperature. Once the diode-mounted transistor is measured, Vbe values according to the junction ... | Original |
52 pages, |
TS86101G2BVGL A09T A6T Diode AI203 MC100EP17 NBSG16 transistor A6t 15 transistor A9t TS86101G2B TS86101G2BCGL A09F transistor A4t 46 A6T TRANSISTOR transistor A4t TSEV86101G2BGL TSEV86101G2BGL abstract |
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| Abstract: , G6, G11 Digital positive power supply A0_T, A1_T, A2_T, A3_T, A4_T, A5_T, A6_T, A7_T, A8_T , across the diode-mounted transistor is linearly dependent on the temperature. Since the characteristic , measured to obtain a junction temperature. Once the diode-mounted transistor is measured, Vbe values ... | Original |
57 pages, |
TSEV86101G2BGL MC100EP17 NBSG16 Pb90Sn10 AI203 transistor A6t 12 TS86101G2B TS86101G2BCGL TS86101G2BVGL diode A5F C7f TRANSISTOR transistor A4t 46 TSEV86101G2BGL abstract |
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| Abstract: Q11J 270885 transistor junction leakage. 80C187 80C187 Interface (80C186EB 80C186EB Only) The 80C186EB 80C186EB (PLCC package only) supports the ... | OCR Scan |
59 pages, |
186eb16 transistor A4t sol 4011 be 80C187 80C186EB TN80C186EB20 intel 80c188EB13 TS80C186EB20 80186EB intel 80188eb 80C186es 80C186EB/80C188EB 80L186EB/80L188EB 16-BIT 80C186EB/80C188EB abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| I F(AV) (mA) 4 t rr (ns) 75 BY719 BY719 BY719 BY719 V RWM (kV) 12.0 I F(AV) (mA) 4 Avionics LDMOS RF POWER Transistor Category Avionics BLA1011-2 BLA1011-2 BLA1011-2 BLA1011-2 Efficiency(%) 50 DESCRIPTION Avionics LDMOS RF POWER Transistor P L (W) 2 Frequency(MHz) 1030 - 1090 T p (uS) 50 Supply UHF power LDMOS transistor Category UHF transistors BLF647 BLF647 BLF647 BLF647 P L (W) 150 G p (dB) 16 Efficiency(%) 55 DESCRIPTION LDMOS RF Power transistor for TV transmitters Frequency www.datasheetarchive.com/files/philips/catalog/parametrics/40-v1.html |
Philips | 21/01/2002 | 37.12 Kb | HTML | 40-v1.html |
| Memory technology achieves its low cost by utilizing a one-transistor (1T), stacked-capacitor storage cell exactly like that of DRAM. In contrast, SRAM uses a 4T cell; the additional three transistors www.datasheetarchive.com/files/idt/idtwebcd/products/sram/fusionbkgrnd.html |
IDT | 27/04/1998 | 23.63 Kb | HTML | fusionbkgrnd.html |
| ) : p 2 C O A V (E/A) < 4 t m = m2 f = f s /2 where : C o = sum of filter and load capacitance t = 1/f s has a single totem-pole output. The output transistors can be operated to + 1 A peak cur- rent and needed when driving a power MOS gate. Cross-conduction between the output transistors is minimal, as Hz. Figures 15-17 show suggested circuits for driving POWERMOS and bipolar transistors with the UC3842 UC3842 UC3842 UC3842 output - smitted across an isolation boundary. Bipolar transistors can be driven effectively with the circuit of www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4034-v2.htm |
STMicroelectronics | 14/06/1999 | 25.86 Kb | HTM | 4034-v2.htm |
| ) : p 2 C O A V (E/A) < 4 t m = m2 f = f s /2 where : C o = sum of filter and load capacitance t = 1/f s has a single totem-pole output. The output transistors can be operated to + 1 A peak cur- rent and needed when driving a power MOS gate. Cross-conduction between the output transistors is minimal, as Hz. Figures 15-17 show suggested circuits for driving POWERMOS and bipolar transistors with the UC3842 UC3842 UC3842 UC3842 output - smitted across an isolation boundary. Bipolar transistors can be driven effectively with the circuit of www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4034-v1.htm |
STMicroelectronics | 02/04/1999 | 25.9 Kb | HTM | 4034-v1.htm |
| frequency (f s /2) is kept below a threshold value (reference 6) : p 2 C O A V (E/A) < 4 -pole output. The output transistors can be operated to + 1 A peak cur- rent and + 200 mA average driving a power MOS gate. Cross-conduction between the output transistors is minimal, as figure 14 Hz. Figures 15-17 show suggested circuits for driving POWERMOS and bipolar transistors with the UC3842 UC3842 UC3842 UC3842 be levelshifted or tran- smitted across an isolation boundary. Bipolar transistors can be driven www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4034-v3.htm |
STMicroelectronics | 25/05/2000 | 27.7 Kb | HTM | 4034-v3.htm |
| switching frequency (f s /2) is kept below a threshold value (reference 6) : p 2 C O A V (E/A) < 4 -coupled Current Sensing. TOTEM-POLE OUTPUT The UC3842 UC3842 UC3842 UC3842 has a single totem-pole output. The output transistors -conduction between the output transistors is minimal, as figure 14 shows. The average added po- wer due to cross POWERMOS and bipolar transistors with the UC3842 UC3842 UC3842 UC3842 output. The simple circuit of figure 15 can be used when drive signal must be levelshifted or tran- smitted across an isolation boundary. Bipolar transistors www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4034.htm |
STMicroelectronics | 20/10/2000 | 28.82 Kb | HTM | 4034.htm |
| Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 1 1.0 Introduction The small industrial inverter market is undergoing a trend toward system integration. There is a desire for better performance and more capabilities while at the same time decreasing the size and cost. This is a fundamental trade-off for integrated modules. The objective is to match the incorporated functions and package design to the application requirements to achieve the optimum system. www.datasheetarchive.com/download/59553498-689294ZC/asipm_apps.zip (ASIPM_Apps.pdf) |
Powerex | 31/01/2002 | 414.95 Kb | ZIP | asipm_apps.zip |
| P R E L I M I N A R Y ICs for Communications Embedded C166 with USB, IOM-2 and HDLC Support C165UTAH C165UTAH C165UTAH C165UTAH Device Version 1.3 Last modified 2/18/2000 Preliminary Data Sheet 02.2000 DS 3 For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com Edition 02.2000 Published by Infineon Technologies AG i. Gr., SC, Balanstraße 73, 81541 Münch www.datasheetarchive.com/files/infineon/mc_data/dave/products/c165utah.dip!/c165utah/documents/165utah_um_02_2000.pdf |
Infineon | 23/08/2002 | 7427.8 Kb | DIP | c165utah.dip |
| P R E L I M I N A R Y ICs for Communications Embedded C166 with USART, IOM-2 and HDLC Support C165H C165H C165H C165H Device Version 1.3 Last modified 2/18/2000 Preliminary Data Sheet 02.2000 DS 3 For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com Edition 02.2000 Published by Infineon Technologies AG i. Gr., SC, Balanstraße 73, 81541 Münche www.datasheetarchive.com/files/infineon/mc_data/dave/products/c165h.dip!/c165h/documents/d165h.pdf |
Infineon | 23/08/2002 | 6982.73 Kb | DIP | c165h.dip |
| P R E L I M I N A R Y ICs for Communications Embedded C166 with USB, USART and SSC C161U C161U C161U C161U Device Version 1.3 Last modified 2/16/2000 Preliminary Data Sheet 02.2000 DS 3 For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com Edition 02.2000 Published by Infineon Technologies AG i. Gr., SC, Balanstraße 73, 81541 München © Infine www.datasheetarchive.com/files/infineon/mc_data/dave/products/c161u.dip!/c161u/documents/d161u.pdf |
Infineon | 23/08/2002 | 5732.94 Kb | DIP | c161u.dip |