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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor A4t

Catalog Datasheet MFG & Type PDF Document Tags

transistor A4t

Abstract: A4t transistor BF982 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected intended for VHF applications, such as VHF television tuners, FM tuners, with 12 V supply voltage. ' This MOS-FET tetrode is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. QUICK REFERENCE , â¡DBS'ïSB A4T This Material Copyrighted By Its Respective Manufacturer BF982 _A RATINGS Limiting values
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transistor A4t A4t transistor transistor A4t 35 transistor A4t 17 Transistor BF982 A4t 65

TN3725A

Abstract: LB 122 NPN TRANSISTOR 00MDL5S Ã"4T 5-61 This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor , -226 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up , Copyrighted By Its Respective Manufacturer in ev r-co a a. < in CM h-co NPN Switching Transistor , Its Respective Manufacturer NPN Switching Transistor (continued) CO >1 IO en > â o D GO Is* cn , This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor (continued) AC
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TN3725A MMPQ3725 LB 122 NPN TRANSISTOR TN3725 LB 122 NPN LB 122 transistor SD113G 100KS1

BUK436-800A

Abstract: BUK436-800B Specification PowerMOS transistor BUK436-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , PowerMOS transistor BUK436-800A/B STATIC CHARACTERISTICS Tmi, = 25 'C unless otherwise specified SYMBOL , DObBIDfl 41T BHPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436-800A/B t/s , ; 6 i â'¢ S I -â'"; I I â 4.t â
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BUK436-800A BUK436-800B BUK436 7110A2

bsh 13 - n1

Abstract: BUK436-800A Specification PowerMOS transistor BUK436-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436-800A/B STATIC , 7110fi2b DObBIDfl 41T BHPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436 , ; 6 i â'¢ S I -â'"; I I â 4.t â
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bsh 13 - n1

3b5 transistor

Abstract: transistor A4t 85 Respective Manufacturer bSE T> â  7110flEb GübSTHS Ã4T U.H.F. power transistor PHILIPS INTERNATIONAL , b5E D m VllDÃ"Sb DQbSTBl im â  PHIN PHILIPS INTERNATIONAL BLU30/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the , matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange , Copyrighted By Its Respective Manufacturer PHILIPS INTERNATIONAL U.H.F. power transistor bSE T> TllDÛSb
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3b5 transistor transistor A4t 85 transistor A4t 45

1N111

Abstract: diode RP 6040 Specification PowerMOS transistor BUK436-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , transistor BUK436-800A/B STATIC CHARACTERISTICS Tmi, = 25 'C unless otherwise specified SYMBOL PARAMETER , Specification PowerMOS transistor BUK436-800A/B t/s Fig. 4. Transient thermal impedance. Zthimb ° ffl , â 4.t â'¢4.1 [ 4.4 i i I ! 4A : i i
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1N111 diode RP 6040 RFT Semiconductors

ETK85-050

Abstract: t460 transistor ETK85-050(75A) , , ': one Transistor Pc 350 W Pc - W ft S SB £ S Ti + 150 'C « & ÌS. Jt Tstg -40â'"4-125 X M 9 m , Characteristics Items Symbols Test Conditions Min Typ Max Units S» fi ÃA Rth(j-c) Transistor 0.35 â'¢C , 80 100 120 îg^glîiâlï T] [TC) Switching Time Transient Thermal Resistance (Transistor) 100 80 , |í"J±
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t460 transistor Diode B29 smme FSIM CA-60 equivalent 3050-FT E82988

blv 33 transistor

Abstract: BLV25 V.H.F. power transistor bTE T> m bb53^3]i ODSÃTSl Û4T BLV25 IAPX RATINGS Limiting values in , TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters , '¢ gold-metallization ensures excellent reliability. The transistor has a % in 6-tead flange envelope with a ceramic , . power transistor b^E D â  bb53T31 00Bflcì53 blE HAPX BLV ZD A 40 typ , capacitor (ATCa); except for C2 these capacitors are placed 7 mm from transistor edge C8 = C10 = 470 pF
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blv 33 transistor rf 2222 vp1020 multilayer S3T31

NDS8410

Abstract: 0 Na tional Semiconductor" May 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices , Charge 5.6 nC Q* Gate-Drain Charge 14 nC hS01130 003^030 Û4T â  4'3 This Material
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0-020Q S01130
Abstract: 5 7 . SGS-1H 0 MS 0 N !IUi@ TOMn©i S D 1727 (T H X 15) RF & MICROW AVE TRANSISTO RS HF SSB APPLIC ATIO N S OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION P o u t = 150 W PEP MIN. WITH 14 dB GAIN PIN CONNECTION 1 uJ 4 A â'¢* o- DESCRIPTION The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB , 13 V ¿ 7 7 SCS-THOMSON _ * 7 a. M ISeÅ"JiSTiM O®® 7 ^ 2 3 7 GG7Dhflc Û4T i 100 -
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THX15 007/CU8

transistor A4t 45

Abstract: transistor A4t SIEMENS BUZ 50 A SIPMOS ® Power Transistor â'¢ N channel â'¢ Enhancement mode Type vDS Id "DS(on) Package Ordering Code BUZ 50 A 1000 V 2.5 A 5 a TO-220 AB C67078-A1307-A3 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Vbs 1000 V Drain-gate voltage f?GS = 20 k£2 ^DGR 1000 Continuous drain current 7"c = 25 °C b 2.5 A Pulsed drain current Tc = 25 °C fopuls 10 Gate source , 10 1 - Semiconductor Group 334 ÃE3Sb05 000417=5 A4T 07.96 This Material Copyrighted By Its
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transistor A4t 2d diode a4t transistor A4t 16 A4t 07 transistor a4t 15 transistor A4t 55
Abstract: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode â'¢ Short-channel transistor with high S/C quality factor â'¢ For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 988 - Pin Configuration 2 4 1 3 Ordering Code Q62702-F36 S D Û2 Package1) X-plast Gì Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V ds , 461 Ã"4T BF 988 Gate 1 input admittance jms V d s = 8 V, V g 2s = 4 V, V g i s = 4 V, / d s -
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300MH EHM070I2 EHM07013

B5G1

Abstract: Supersot 6 fi National Semiconductor" March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , board design. LS01130 â¡â¡317Ã"M Û4T 3-85 This Material Copyrighted By Its Respective Manufacturer
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B5G1 Supersot 6 S0113D 5G1130 D3C17

9632 transistor

Abstract: transistor 9632 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG67W BFG67W/X , specification NPN 8 GHz wideband transistor BFG67W _BFG67W/X; BFG67W/XR LIMITING VALUES In accordance with , transistor BFG67W BFG67W/X; BFG67W/XR CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL , Product specification NPN 8 GHz wideband transistor 120 MBB301 hFE 80 , wideband transistor BFG67W/X; BFG67W/XR 30 gain
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9632 transistor transistor 9632 high gain low capacitance NPN transistor transistor marking CODE S4b transistor equivalent 1047

transistor A4t

Abstract: transistor A4t 35 â'¢ Low power, high-speed QCMOSâ"¢ technology â'¢ Military product compliant to MIL-STD-883 6-Transistor , high-performance CMOS process, and it is based on a 6-transistor cell design for high reliability of data retention , > A4 A4T] 5 11 12 ) A6 A5 IE 6 13 14 ) CS A6X] 7 15 16 ) WE A7 Jl 8 17 18 ) I/O 2 19
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transistor A4t 5 H A4t 70 QS8769

transistor tt 2222

Abstract: 78L05 voltage regulator Philips Semiconductors Product specification VHF push-pull power MOS _transistor , . DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated In a 4 , Manufacturer Philips Semiconductors Product specification VHF push-pull power MOS transistor PHILIPS INTERNATIONAL " SbFT LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor
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BLF248 transistor tt 2222 78L05 voltage regulator philips Trimmer 60 pf TT 2222 2222 031 capacitor philips capacitor philips ll

transistor A4t 88

Abstract: transistor A006 Transistors Digital Transistor (Isolateci Dual Digital Transistors ) UMH11N/ IMH11A â'¢F e a , M T 3 au to m atic m ounting ma­ 0.7 chines. 3) Transistor elements are indepen­ (3 , -74 Epitaxial planar type NPN silicon transistor (Built-in resistor type) DTrs The following , * â'¢Transition frequency of mounted transistor â'¢P a c k a g in g specifications Package Taping Code , .4 Output voltage vs. output current â¡01720L Ì4T noH m 541 Packages Transistors
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transistor A4t 88 transistor A006 UMH11N SC-88 SC-74 SC-43 SC-67 T0-220FP

transistor A4t 85

Abstract: S G S -T H O M S O N S T D 1 7 N 0 5 L r a n c Å" iiiL iC T iû iia D e i S T D 1 7 N 0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS(on) Id STD17N05L 50 V < 0.085 Û 17 A STD17N06L 60 V < 0.085 Q 17 A TYPICAL RDS(on) = 0.065 D, AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT , raieRoeuæ'irRefaies 7 c 2 ti 2 3 7 i GG72721 Ã"4T â  9/10
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STD17N05L/STD17N06L 0068772-B
Abstract: HA RR IS SEÃ1IC0N» S E C T O R bflE D â  M30 E 27 1 DQSOEEfi Ã"4T â  Â¡ H A S HGTG30N120D2 30A, 1200V N-Channel IGBT D ecember 1993 Features Package JEDEC STYLE TO-247 TOP VIE!N â'¢ 30 A m p 1200 V olt â'¢ L a tch Free O p e ra tio n _ EMITTER â'¢ T y p ic a l Fall T im e - 580ns COLLECTOR I (BOTTOM SIDE H l( METAL) U â'¢ H igh In p u t Im p eda nce â'¢ L o w , bipolar transistor. The much lower on-state voltage drop varies only m oderately between +25°C and -
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30N120D2 TA49010

A4t 29 smd

Abstract: smd a4t BUZ 32 In fin e o n t*chriQlogt*s SIPMOS ® Power Transistor â'¢ N channel â'¢ Enhancement mode â'¢ Avalanche-rated Type BUZ 32 Vds Package 200 V 9.5 A 0.4 n â  Ordering Code TO-220 AB f lDS(on) C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current Values Unit A b 9.5 Tc = 29 "C Pulsed drain current fopuls Tc = , (BRJDSS 10 100 n ^DS(on) VGs = 10 V, /d = 6 A 0.3 0.4 6235b05 D1332A1 Ã4T Data
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A4t 29 smd smd a4t P-T0220-3-1 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK Q133777 SQT-89
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