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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 47 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.47 Price Each : $2.77
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transistor A4t

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BF982 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected intended for VHF applications, such as VHF television tuners, FM tuners, with 12 V supply voltage. ' This MOS-FET tetrode is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. QUICK REFERENCE , â¡DBS'ïSB A4T This Material Copyrighted By Its Respective Manufacturer BF982 _A RATINGS Limiting values -
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A4t transistor transistor A4t 35 transistor A4t 17 Transistor BF982 A4t 65 MARKING A4T
Abstract: 00MDL5S Ã"4T 5-61 This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor , -226 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up , Copyrighted By Its Respective Manufacturer in ev r-co a a. < in CM h-co NPN Switching Transistor , Its Respective Manufacturer NPN Switching Transistor (continued) CO >1 IO en > â o D GO Is* cn , This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor (continued) AC -
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TN3725A MMPQ3725 LB 122 NPN TRANSISTOR TN3725 LB 122 NPN LB 122 transistor SD113G 100KS1
Abstract: Specification PowerMOS transistor BUK436-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , PowerMOS transistor BUK436-800A/B STATIC CHARACTERISTICS Tmi, = 25 'C unless otherwise specified SYMBOL , DObBIDfl 41T BHPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436-800A/B t/s , ; 6 i â'¢ S I -â'"; I I â 4.t â -
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BUK436-800A BUK436-800B BUK436 7110A2
Abstract: Specification PowerMOS transistor BUK436-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436-800A/B STATIC , 7110fi2b DObBIDfl 41T BHPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK436 , ; 6 i â'¢ S I -â'"; I I â 4.t â -
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bsh 13 - n1
Abstract: Respective Manufacturer bSE T> â  7110flEb GübSTHS Ã4T U.H.F. power transistor PHILIPS INTERNATIONAL , b5E D m VllDÃ"Sb DQbSTBl im â  PHIN PHILIPS INTERNATIONAL BLU30/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the , matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange , Copyrighted By Its Respective Manufacturer PHILIPS INTERNATIONAL U.H.F. power transistor bSE T> TllDÛSb -
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3b5 transistor transistor A4t 85 transistor A4t 45
Abstract: Specification PowerMOS transistor BUK436-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , transistor BUK436-800A/B STATIC CHARACTERISTICS Tmi, = 25 'C unless otherwise specified SYMBOL PARAMETER , Specification PowerMOS transistor BUK436-800A/B t/s Fig. 4. Transient thermal impedance. Zthimb ° ffl , â 4.t â'¢4.1 [ 4.4 i i I ! 4A : i i -
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1N111 diode RP 6040 RFT Semiconductors
Abstract: ETK85-050(75A) , , ': one Transistor Pc 350 W Pc - W ft S SB £ S Ti + 150 'C « & ÌS. Jt Tstg -40â'"4-125 X M 9 m , Characteristics Items Symbols Test Conditions Min Typ Max Units S» fi ÃA Rth(j-c) Transistor 0.35 â'¢C , 80 100 120 îg^glîiâlï T] [TC) Switching Time Transient Thermal Resistance (Transistor) 100 80 , |í"J± -
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t460 transistor 3050-FT ti 50AA T760 T151 smme E82988
Abstract: V.H.F. power transistor bTE T> m bb53^3]i ODSÃTSl Û4T BLV25 IAPX RATINGS Limiting values in , TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters , '¢ gold-metallization ensures excellent reliability. The transistor has a % in 6-tead flange envelope with a ceramic , . power transistor b^E D â  bb53T31 00Bflcì53 blE HAPX BLV ZD A 40 typ , capacitor (ATCa); except for C2 these capacitors are placed 7 mm from transistor edge C8 = C10 = 470 pF -
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blv 33 transistor rf 2222 multilayer vp1020 S3T31
Abstract: 0 Na tional Semiconductor" May 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices , Charge 5.6 nC Q* Gate-Drain Charge 14 nC hS01130 003^030 Û4T â  4'3 This Material -
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0-020Q S01130
Abstract: 5 7 . SGS-1H 0 MS 0 N !IUi@ TOMn©i S D 1727 (T H X 15) RF & MICROW AVE TRANSISTO RS HF SSB APPLIC ATIO N S OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION P o u t = 150 W PEP MIN. WITH 14 dB GAIN PIN CONNECTION 1 uJ 4 A â'¢* o- DESCRIPTION The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB , 13 V ¿ 7 7 SCS-THOMSON _ * 7 a. M ISeÅ"JiSTiM O®® 7 ^ 2 3 7 GG7Dhflc Û4T i 100 -
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THX15 007/CU8
Abstract: SIEMENS BUZ 50 A SIPMOS ® Power Transistor â'¢ N channel â'¢ Enhancement mode Type vDS Id "DS(on) Package Ordering Code BUZ 50 A 1000 V 2.5 A 5 a TO-220 AB C67078-A1307-A3 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Vbs 1000 V Drain-gate voltage f?GS = 20 k£2 ^DGR 1000 Continuous drain current 7"c = 25 °C b 2.5 A Pulsed drain current Tc = 25 °C fopuls 10 Gate source , 10 1 - Semiconductor Group 334 ÃE3Sb05 000417=5 A4T 07.96 This Material Copyrighted By Its -
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transistor A4t 2d diode a4t transistor A4t 16 A4t 07 transistor A4t 55 transistor a4t 15
Abstract: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode â'¢ Short-channel transistor with high S/C quality factor â'¢ For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 988 - Pin Configuration 2 4 1 3 Ordering Code Q62702-F36 S D Û2 Package1) X-plast Gì Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V ds , 461 Ã"4T BF 988 Gate 1 input admittance jms V d s = 8 V, V g 2s = 4 V, V g i s = 4 V, / d s -
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300MH EHM070I2 EHM07013
Abstract: fi National Semiconductor" March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , board design. LS01130 â¡â¡317Ã"M Û4T 3-85 This Material Copyrighted By Its Respective Manufacturer -
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B5G1 Supersot 6 S0113D 5G1130 D3C17
Abstract: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG67W BFG67W/X , specification NPN 8 GHz wideband transistor BFG67W _BFG67W/X; BFG67W/XR LIMITING VALUES In accordance with , transistor BFG67W BFG67W/X; BFG67W/XR CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL , Product specification NPN 8 GHz wideband transistor 120 MBB301 hFE 80 , wideband transistor BFG67W/X; BFG67W/XR 30 gain -
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9632 transistor transistor 9632 transistor equivalent 1047 transistor marking CODE S4b
Abstract: â'¢ Low power, high-speed QCMOSâ"¢ technology â'¢ Military product compliant to MIL-STD-883 6-Transistor , high-performance CMOS process, and it is based on a 6-transistor cell design for high reliability of data retention , > A4 A4T] 5 11 12 ) A6 A5 IE 6 13 14 ) CS A6X] 7 15 16 ) WE A7 Jl 8 17 18 ) I/O 2 19 -
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transistor A4t 5 H A4t 70 QS8769
Abstract: Philips Semiconductors Product specification VHF push-pull power MOS _transistor , . DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated In a 4 , Manufacturer Philips Semiconductors Product specification VHF push-pull power MOS transistor PHILIPS INTERNATIONAL " SbFT LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor -
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BLF248 transistor tt 2222 78L05 voltage regulator philips Trimmer 60 pf TT 2222 2222 031 capacitor philips capacitor philips ll
Abstract: Transistors Digital Transistor (Isolateci Dual Digital Transistors ) UMH11N/ IMH11A â'¢F e a , M T 3 au to m atic m ounting ma­ 0.7 chines. 3) Transistor elements are indepen­ (3 , -74 Epitaxial planar type NPN silicon transistor (Built-in resistor type) DTrs The following , * â'¢Transition frequency of mounted transistor â'¢P a c k a g in g specifications Package Taping Code , .4 Output voltage vs. output current â¡01720L Ì4T noH m 541 Packages Transistors -
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transistor A006 transistor A4t 88 UMH11N SC-88 SC-74 SC-43 SC-67 T0-220FP
Abstract: S G S -T H O M S O N S T D 1 7 N 0 5 L r a n c Å" iiiL iC T iû iia D e i S T D 1 7 N 0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS(on) Id STD17N05L 50 V < 0.085 Û 17 A STD17N06L 60 V < 0.085 Q 17 A TYPICAL RDS(on) = 0.065 D, AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT , raieRoeuæ'irRefaies 7 c 2 ti 2 3 7 i GG72721 Ã"4T â  9/10 -
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STD17N05L/STD17N06L 0068772-B
Abstract: HA RR IS SEÃ1IC0N» S E C T O R bflE D â  M30 E 27 1 DQSOEEfi Ã"4T â  Â¡ H A S HGTG30N120D2 30A, 1200V N-Channel IGBT D ecember 1993 Features Package JEDEC STYLE TO-247 TOP VIE!N â'¢ 30 A m p 1200 V olt â'¢ L a tch Free O p e ra tio n _ EMITTER â'¢ T y p ic a l Fall T im e - 580ns COLLECTOR I (BOTTOM SIDE H l( METAL) U â'¢ H igh In p u t Im p eda nce â'¢ L o w , bipolar transistor. The much lower on-state voltage drop varies only m oderately between +25°C and -
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30N120D2 TA49010
Abstract: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS ® Power Transistor â'¢ N channel â'¢ Enhancement mode â'¢ Avalanche-rated Type BUZ 32 Vds Package 200 V 9.5 A 0.4 n â  Ordering Code TO-220 AB f lDS(on) C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current Values Unit A b 9.5 Tc = 29 "C Pulsed drain current fopuls Tc = , (BRJDSS 10 100 n ^DS(on) VGs = 10 V, /d = 6 A 0.3 0.4 6235b05 D1332A1 Ã4T Data -
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A4t 29 smd smd a4t P-T0220-3-1 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK Q133777 SQT-89
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