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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.26 Price Each : $1.32
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transistor A1668

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: KEC SEMICONDUCTOR KT A1668 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE FEATURES * High Voltage : VCEo=-60V(Min.). * High Current : Ic(Max>-lA. * High Transition Frequency : Ìt=150MHz (Typ.). * Wide Area of Safe Operation. * Complementary , Revision No : 2 KEC 1/3 KT A1668 le ~ Vce le - Vce ] l 1 [Ã=â'"10mA , 1 â'ž . -ODIA IB , -30-100-300 -1K -5K COLLECTOR CURRENT IC (mA) 1999. 12. 22 Revision No : 2 KEC 2/3 KT A1668 SAFE -
OCR Scan
KTC4378 a1668 transistor 1Z04 150MH
Abstract: Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , A1216 C2922 A1668 C4382 A1859A C4883A D2016 C5271 D2557 D2558 180 Collector­Emitter , (A) 2 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ , Transistor Selection Guide Transistors for Audio Amplifiers s Single Transistors q Single Emitter Part , Transistor Selection Guide s Darlington Transistors Part No. 2SB1686 2SD2642 2SB1659 2SD2589 2SB1685 Sanken Electric
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C4418 C5130 C4138 C3852A c5287 a1695 power transistor transistor c4381 A1216 C2922 C5239 C3679 C4300 C3680 C4301 C5002
Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , .059 .077 .182 .366 .620 â'"169.7 â'"166.8 â'"167.8 â'"173.7 174.0 139.1 61.9 30.4 13.5 Teledyne Cougar
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transistor a1723
Abstract: '"62 to +150°C +125°C 18 Thermal Characteristics1 θJC Active Transistor Power Dissipation , .167 .163 .156 .157 .171 .204 .222 .389 .394 .363 â'"166.8 â'"162.6 â'"151.7 â'"139.7 â Agilent Technologies
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transistor a920 transistor a1266 transistor A915 A1279 transistor a640 UTM-1053 1000MH 5963-3240E 5963-2510E
Abstract: 2 0 100 Frequency, MHz Thermal Characteristics1 θJC Active Transistor Power Dissipation , .077 .182 .366 .620 â'"169.7 â'"166.8 â'"167.8 â'"173.7 174.0 139.1 61.9 30.4 13.5 â Agilent Technologies
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500MH 5963-2556E
Abstract: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications â'¢ Low noise figure, high gain. â'¢ Unit: mm NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage , '36.2 800 0.447 â'154.4 3.691 87.1 0.086 51.6 0.442 â'37.1 1000 0.435 â'166.8 Toshiba
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Abstract: â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"177.3 â'"176.5 â'"177.1 â'"175.3 â'"174.1 â'"170.9 â'"166.8 â'"185.4 â'"157.7 â'"147.8 â Teledyne Cougar
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Abstract: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications â'¢ Low noise figure, high gain. â'¢ Unit: mm NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage , 51.6 0.442 â'37.1 1000 0.435 â'166.8 3.049 79.9 0.096 55.9 0.424 â Toshiba
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Abstract: Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case , '"176.5 â'"177.1 â'"175.3 â'"174.1 â'"170.9 â'"166.8 â'"185.4 â'"157.7 â'"147.8 â'"138.4 â Agilent Technologies
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5963-2451E
Abstract: Ordering number:ENN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. unit:mm 2059B 0.15 0.2 0.425 [2SC5226] 0.3 3 2.1 0.425 1.250 0 to 0.1 1 , 0.130 38.6 0.426 â'"57.1 1200 0.536 â'"166.8 2.446 70.5 0.137 40.3 SANYO Electric
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Abstract: DATA SHEET NPN SILICON RF TWIN TRANSISTOR ÂuPA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz â'¢ Built-in 2 transistors (2 × 2SC5800) â'¢ 6-pin lead-less minimold package BUILT-IN , '83.9 â'99.0 â'111.8 â'122.4 â'131.7 â'139.5 â'146.6 â'152.5 â'157.9 â'162.3 â'166.8 â -
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PA873TD PA873TD-T3 PU10151EJ01V0DS
Abstract: reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 A1668 , 25 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ 130V , 7 C3679 C3680 C4299 C4445 C4300 C4301 3 Transistor Selection Guide Transistors for Sanken Electric
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c4381 D2494 c4131 transistor c3835 C4020 TO220 c3852 2SC1440 2SC2900 2SC1442 2SC3409 2SC3679 2SC1444
Abstract: DISCRETE SEMICONDUCTORS DAT M3D091 BLF278 VHF push-pull power MOS transistor Product , VHF push-pull power MOS transistor BLF278 PINNING - SOT262A1 FEATURES â'¢ High power gain , push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 , Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 LIMITING VALUES In , . UNIT Per transistor section VDS drain-source voltage â' 125 VGS gate-source voltage Philips Semiconductors
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SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B MAM098 SCA75
Abstract: TRANSISTOR ÂuPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH , '"127.2 â'"136.1 â'"144.4 â'"152.5 â'"160.7 â'"166.8 â'"171.5 â'"177.0 177.6 170.4 165.8 162.0 Renesas Electronics
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Abstract: TRANSISTOR ÂuPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 Ã , '"79.7 â'"92.3 â'"106.1 â'"117.6 â'"127.9 â'"136.7 â'"145.0 â'"153.1 â'"161.4 â'"166.8 â'"171.3 â Renesas Electronics
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nec a1232
Abstract: TRANSISTOR ÂuPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , '160.4 â'166.8 â'172.3 â'177.0 178.4 174.7 171.1 168.2 165.3 162.6 160.5 158.9 156.9 154.9 Renesas Electronics
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PU10067EJ01V0DS PA860TD
Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '78.2 â'86.2 â'98.2 â'112.8 â'132.0 â'151.7 â'166.8 â'175.3 176.0 169.8 Data Sheet Renesas Electronics
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nec A1394 PU10104EJ01V0DS
Abstract: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Low voltage operation, low phase distortion â'¢ Ideal for OSC applications â'¢ 3-pin lead-less minimold package ORDERING INFORMATION Part Number , '151.9 â'158.3 â'163.3 â'166.8 â'170.4 17.413 12.280 9.079 7.053 5.769 4.872 4.212 3.699 , '155.3 â'158.5 â'161.5 â'164.2 â'166.8 â'169.4 â'171.7 1.310 1.213 1.111 1.040 0.973 NEC
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A1489 TRANSISTOR A827 1307 Transistor a1244 2SC5677-T3 P15287EJ1V0DS0
Abstract: '16.15 â'15.97 â'15.67 â'15.96 â'16.17 â'16.68 â'17.66 â'19.15 â'21.42 â'24.24 â , Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters Analog Devices
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transistor a2431 A2611 8 Pin a2733 a2955 A2611 transistor a954 ADL5602 0603LS-NX 09-12-2013-C PKG-003480 ADL5602ARKZ-R7 ADL5602-EVALZ
Abstract: TRANSISTOR ÂuPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 NEC
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Transistor a1488 PU10057EJ02V0DS PA861TD
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