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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor A1668

Catalog Datasheet MFG & Type PDF Document Tags

A1668

Abstract: a1668 transistor KEC SEMICONDUCTOR KT A1668 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE FEATURES * High Voltage : VCEo=-60V(Min.). * High Current : Ic(Max>-lA. * High Transition Frequency : Ìt=150MHz (Typ.). * Wide Area of Safe Operation. * Complementary , Revision No : 2 KEC 1/3 KT A1668 le ~ Vce le - Vce ] l 1 [Ã=â'"10mA , 1 â'ž . -ODIA IB , -30-100-300 -1K -5K COLLECTOR CURRENT IC (mA) 1999. 12. 22 Revision No : 2 KEC 2/3 KT A1668 SAFE
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OCR Scan
KTC4378 a1668 transistor transistor A1668 1Z04 150MH

C4517

Abstract: c5287 Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , A1216 C2922 A1668 C4382 A1859A C4883A D2016 C5271 D2557 D2558 180 Collector­Emitter , (A) 2 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ , Transistor Selection Guide Transistors for Audio Amplifiers s Single Transistors q Single Emitter Part , Transistor Selection Guide s Darlington Transistors Part No. 2SB1686 2SD2642 2SB1659 2SD2589 2SB1685
Sanken Electric
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C4418 C5130 C4138 C3852A c5287 a1695 power transistor transistor c4381 A1216 C2922 C5239 C3679 C4300 C3680 C4301 C5002

transistor a1723

Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , .059 .077 .182 .366 .620 â'"169.7 â'"166.8 â'"167.8 â'"173.7 174.0 139.1 61.9 30.4 13.5
Teledyne Cougar
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transistor a1723

transistor a920

Abstract: transistor A915 '"62 to +150°C +125°C 18 Thermal Characteristics1 θJC Active Transistor Power Dissipation , .167 .163 .156 .157 .171 .204 .222 .389 .394 .363 â'"166.8 â'"162.6 â'"151.7 â'"139.7 â
Agilent Technologies
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transistor a920 transistor A915 transistor a1266 A1279 transistor a640 UTM-1053 1000MH 5963-3240E 5963-2510E
Abstract: 2 0 100 Frequency, MHz Thermal Characteristics1 θJC Active Transistor Power Dissipation , .077 .182 .366 .620 â'"169.7 â'"166.8 â'"167.8 â'"173.7 174.0 139.1 61.9 30.4 13.5 â Agilent Technologies
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500MH 5963-2556E
Abstract: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications â'¢ Low noise figure, high gain. â'¢ Unit: mm NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage , '36.2 800 0.447 â'154.4 3.691 87.1 0.086 51.6 0.442 â'37.1 1000 0.435 â'166.8 Toshiba
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Abstract: â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"177.3 â'"176.5 â'"177.1 â'"175.3 â'"174.1 â'"170.9 â'"166.8 â'"185.4 â'"157.7 â'"147.8 â Teledyne Cougar
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Abstract: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications â'¢ Low noise figure, high gain. â'¢ Unit: mm NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage , 51.6 0.442 â'37.1 1000 0.435 â'166.8 3.049 79.9 0.096 55.9 0.424 â Toshiba
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Abstract: Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case , '"176.5 â'"177.1 â'"175.3 â'"174.1 â'"170.9 â'"166.8 â'"185.4 â'"157.7 â'"147.8 â'"138.4 â Agilent Technologies
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5963-2451E
Abstract: Ordering number:ENN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. unit:mm 2059B 0.15 0.2 0.425 [2SC5226] 0.3 3 2.1 0.425 1.250 0 to 0.1 1 , 0.130 38.6 0.426 â'"57.1 1200 0.536 â'"166.8 2.446 70.5 0.137 40.3 SANYO Electric
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Transistor NEC K 3654

Abstract: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz â'¢ Built-in 2 transistors (2 × 2SC5800) â'¢ 6-pin lead-less minimold package BUILT-IN , '83.9 â'99.0 â'111.8 â'122.4 â'131.7 â'139.5 â'146.6 â'152.5 â'157.9 â'162.3 â'166.8 â
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Transistor NEC K 3654 PA873TD-T3 PU10151EJ01V0DS

c5287

Abstract: c4381 reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 A1668 , 25 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ 130V , 7 C3679 C3680 C4299 C4445 C4300 C4301 3 Transistor Selection Guide Transistors for
Sanken Electric
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c4381 D2494 c4131 transistor c3835 C4020 TO220 c3852 2SC1440 2SC2900 2SC1442 2SC3409 2SC3679 2SC1444
Abstract: DISCRETE SEMICONDUCTORS DAT M3D091 BLF278 VHF push-pull power MOS transistor Product , VHF push-pull power MOS transistor BLF278 PINNING - SOT262A1 FEATURES â'¢ High power gain , push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 , Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 LIMITING VALUES In , . UNIT Per transistor section VDS drain-source voltage â' 125 VGS gate-source voltage Philips Semiconductors
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SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B MAM098 SCA75
Abstract: TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH , '"127.2 â'"136.1 â'"144.4 â'"152.5 â'"160.7 â'"166.8 â'"171.5 â'"177.0 177.6 170.4 165.8 162.0 Renesas Electronics
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nec a1232

Abstract: TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 à , '"79.7 â'"92.3 â'"106.1 â'"117.6 â'"127.9 â'"136.7 â'"145.0 â'"153.1 â'"161.4 â'"166.8 â'"171.3 â
Renesas Electronics
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nec a1232
Abstract: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , '160.4 â'166.8 â'172.3 â'177.0 178.4 174.7 171.1 168.2 165.3 162.6 160.5 158.9 156.9 154.9 Renesas Electronics
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PU10067EJ01V0DS

nec A1394

Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '78.2 â'86.2 â'98.2 â'112.8 â'132.0 â'151.7 â'166.8 â'175.3 176.0 169.8 Data Sheet
Renesas Electronics
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nec A1394 PU10104EJ01V0DS

A1668

Abstract: A1489 TRANSISTOR DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Low voltage operation, low phase distortion â'¢ Ideal for OSC applications â'¢ 3-pin lead-less minimold package ORDERING INFORMATION Part Number , '151.9 â'158.3 â'163.3 â'166.8 â'170.4 17.413 12.280 9.079 7.053 5.769 4.872 4.212 3.699 , '155.3 â'158.5 â'161.5 â'164.2 â'166.8 â'169.4 â'171.7 1.310 1.213 1.111 1.040 0.973
NEC
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A1489 TRANSISTOR Transistor a1244 A827 1307 2SC5677-T3 P15287EJ1V0DS0

transistor a2431

Abstract: A2611 8 Pin '16.15 â'15.97 â'15.67 â'15.96 â'16.17 â'16.68 â'17.66 â'19.15 â'21.42 â'24.24 â , Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters
Analog Devices
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transistor a2431 A2611 8 Pin a2733 a2955 A2611 transistor a954 ADL5602 0603LS-NX 09-12-2013-C PKG-003480 ADL5602ARKZ-R7 ADL5602-EVALZ

Transistor a1488

Abstract: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0
NEC
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Transistor a1488 PU10057EJ02V0DS
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