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transistor A1492

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10 A1186.11 A1215.12 A1216.13 A1262.14 A1294 , .18 A1488/A .19 A1493 Sanken Electric
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d2493 c4468 transistor D2562 B1649 c4467 c4381 c4131 A1295 A1303 A1386/A A1492 A1494 A1567
Abstract: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10 A1186.11 A1215.12 A1216.13 A1262.14 A1294 , .18 A1488/A .19 Sanken Electric
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D2641 D2643 transistor A114 C5239 b1686 c4517 C3284 A1568 A1667/8 A1673 A1693 A1694 A1695
Abstract: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10 A1186.11 A1215.12 A1216.13 A1262.14 A1294 , .18 A1488/A .19 Sanken Electric
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B1258 c4467 a1694 C3519 c3852 C3834 d2494 C3856 A1725 A1726 A1746 A1859/A A1860 A1907
Abstract: Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , A1492 A1673 C3519A C3856 C4388 A1215 A1386 C2921 C3519 B1647 B1649 D2560 D2562 A1295 C3264 A1494 C3858 , (A) 2 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ , Transistor Selection Guide Transistors for Audio Amplifiers s Single Transistors q Single Emitter Part , Transistor Selection Guide s Darlington Transistors Part No. 2SB1686 2SD2642 2SB1659 2SD2589 2SB1685 Sanken Electric
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C4418 C5130 C4138 C3852A c5287 a1695 power transistor transistor c4381 A1216 C2922 C3679 C4300 C3680 C4301 C5002 C5003
Abstract: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , '"170.5 â'"167.7 â'"161.0 â'"148.7 â'"132.3 â'"122.4 â'"122.3 â'"129.3 â'"139.5 â'"149.2 dB Agilent Technologies
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500MH MIL-HDBK-217E 5963-3240E 5963-2533E
Abstract: reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , .19 Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , C4886 A1386A A1492 A1673 C3519A C3856 C4388 A1215 A1386 C2921 C3519 B1647 B1649 D2560 , 25 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ 130V Sanken Electric
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transistor c3835 C4020 TO220 transistor c3856 npn C4130 transistor c5287 transistor c4131 2SC1440 2SC2900 2SC1442 2SC3409 2SC3679 2SC1444
Abstract: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5508 / NE662M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V , 0.19 0.25 R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 ANG. â'"159.4 â'"157.5 â'"155.7 â'"149.2 â Renesas Technology
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MARKING T79 transistor marking T79 ghz 2SC5508-A 2SC5508-T2 2SC5508-T2-A 2SC5508-T2B 2SC5508-T2B-A
Abstract: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 3, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. â'¢ Typical Wâ'CDMA Performance: â'42 dBc ACPR, 3.55 GHz, 12 Volts , 4.35 0.940 124.45 0.635 â'14.92 0.027 â'2.73 0.789 137.16 4.4 0.939 Freescale Semiconductor
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13007 502
Abstract: Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 , '"159.4 â'"157.5 â'"155.7 â'"149.2 â'"146.1 â'"145.0 â'"143.9 â'"136.7 R09DS0055EJ0200 Rev Renesas Electronics
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Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '79.3 â'90.9 â'102.6 â'112.9 â'125.6 â'138.7 â'149.2 â'157.2 â'165.3 â'173.5 3.491 Renesas Electronics
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PU10103EJ01V0DS
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS , '"134.5 â'"141.4 â'"149.2 â'"155.4 â'"163.1 â'"170.8 â'"173.8 â'"179.5 176.9 171.1 164.9 160.6 Renesas Electronics
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nec a1010
Abstract: Specifications List by Part Number . 172 2-4 Transistor and MOS FET , C6011A A2223 C6145 A1493 C3857 A2151 C6011 A1386A A1492 A1673 C3519A C3856 C4388 A1215 , MT-200 (fixed at two points) MT-200 (fixed at two points) LAPT (Linear Amplified Power Transistor): Multi-Emitter Transistor for High-Frequency â Output Transistors with Temperature Compensating Function Sanken Electric
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c4468 power transistor equivalent c5287 equivalent transistor SLA5096 c4381 power transistor equivalent c4131 equivalent transistor sla5212 SLA12P SLA15P
Abstract: Specifications List by Part Number . 168 2-4 Transistor and MOS FET Arrays , C6011 A1386A A1492 A1673 C3519A C3856 C4388 A1215 A1386 C2921 C3519 B1647 B1649 D2560 -
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fgt313 B1560 equivalent 2sk2079 FGT412 SLA4052 C4381 equivalent SLA21P
Abstract: Specifications List by Part Number . 158 2-3 Transistor and MOS FET Arrays , C6011A A1493 C3857 A2151 C6011 A1386A A1492 A1673 C3519A C3856 C4388 A1215 A1386 C2921 C3519 B1647 B1649 , 2-3 Transistor and MOS FET Arrays Specifications List by Part Number Part Number SDA05 SDC03 SDC04 , (SMA12Pin) SIP12 (SMA12Pin) SIP12 (SMA12Pin) SIP15 (SMA15Pin) 160 Transistors 2-3 Transistor and Sanken Electric
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2SC5586 equivalent 2SK3003 equivalent D2141 equivalent D2045 STA491A transistor a1694 equivalent SMA15P
Abstract: TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , 0.070 0.074 0.077 0.080 0.084 â'138.0 â'140.1 â'149.2 â'154.6 â'159.0 â'163.7 â Renesas Electronics
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PU10070EJ01V0DS
Abstract: TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE , 0.647 0.634 0.626 0.625 â'34.1 â'65.1 â'89.0 â'107.3 â'121.1 â'132.5 â'141.7 â'149.2 Renesas Electronics
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Abstract: reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , .19 Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , C4886 A1386A A1492 A1673 C3519A C3856 C4388 A1215 A1386 C2921 C3519 B1647 B1649 D2560 , 25 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ 130V Sanken Electric
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B1625 equivalent transistor a1668 transistor D2495 D1796 power transistor A1668 c3831 power transistor data sheet 2SC4511 2SC3520 2SC4140 2SC1454 2SC3706 2SC1477
Abstract: reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , .19 Transistor Selection Guide s VCEO-IC 800 , B1259 D2081 C4495 3 A2042 C4024 4 A1303 A1860 C3284 C4886 A1386A A1492 A1673 , C3680 C4301 C5002 C5003 C4131 14 15 16 17 18 25 Transistor Selection Guide Sanken Electric
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C3679 equivalent SK C4020 sk c4467 SK C5071 SK c3679 sk A1186 T01EE0 2SC4468 2SC4503 2SD2083 2SD80 2SC4466
Abstract: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES â'¢ Ideal for low noise â' high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz â'¢ Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz â'¢ SiGe , '136.5 â'143.0 â'149.2 â'155.5 10.409 9.808 9.237 8.783 8.324 7.884 7.504 7.160 6.816 NEC
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transistor A1024 A1712 nec a1232 2SC5761-T2
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