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2N3019S Microsemi Corporation Transistor visit Digikey
2N2906AUB Microsemi Corporation Transistor visit Digikey
2N2221AUB Microsemi Corporation Transistor visit Digikey
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SRF4427G Microsemi Corporation Transistor visit Digikey

transistor+2N5952

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N5952 2N5952 N-Channel RF Ampifier · This device is designed primarily for electronic switching applications such as low on resistance analog switching. · Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS Gate-Source Voltage -30 , Fairchild Semiconductor Corporation Rev. A, June 2002 2N5952 Package Demensions TO-92 +0.25 Fairchild Semiconductor
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transistor 2N5952 2n5952 equivalent Variable resistor 50K ohm
Abstract: 2N5952 2N5952 N-Channel RF Ampifier · This device is designed primarily for electronic switching applications such as low on resistance analog switching. · Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS Gate-Source Voltage -30 , Fairchild Semiconductor Corporation Rev. A1, November 2002 2N5952 Package Dimensions TO Fairchild Semiconductor
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Abstract: Datasheet 2n5949 2n5950 JiAiMlllii 1 2n5951 WCIHBQ 1 2n5952 Semiconductor Cora. 2n5953 145 Adams Avenue, Hauppauge, NY 11788 USA n-channel fet Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 t0-92-18r case Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N59^9 Series types are Silicon N Channel Junction FETs designed for switching, RF amplifier and , CHARACTERISTICS (TA=25°C unless otherwise noted) 2n59^9 2n5950 2n5951 2n5952 2n5953 symbol test conditions min -
OCR Scan
100MHZ 2N5951 2n5949 2n599 2N59 2N5950
Abstract: N-Channel JFET Transistors Part No. BVGSS Min. VP 2N5246 2N5247 2N5458 2N5459 2N5484 2N5485 2N5950 2N5952 BF245A PN4118 PN4303 PN5434 TIS73 (V) 30 30 25 25 25 25 30 30 30 40 30 25 30 Min. (V) 0.50 1.50 1.00 2.00 0.30 0.50 2.50 1.30 0.50 1.00 1.00 4.00 2N4338 2N4339 2N4341 2N4859 50 50 50 30 0.3 0.6 2.0 4.0 @ Max. (V) 4.0 8.0 7.0 8.0 3.0 4.0 6.0 4.5 8.0 3.0 6.0 4.0 10.0 JFET VDS & VDS (V) 15 15 15 15 15 15 Taitron Components
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jfet 2n5952 BF245
Abstract: G SD G SD G SD 2N3819 2N4416 2N4416A 2N5484 2N5485 2N5486 2N5949 2N5950 2N5951 2N5952 2N5953 -
OCR Scan
Abstract: 2.0 5.0 100 30 2.0 5.0 7.0 13 GSD TO-92 2N5952 1.0 100 75 -
OCR Scan
000244S
Abstract: DSG DSG GSD GSD GSD GSD GSD 2N3819 2N4416 2N4416A 2N5484 2N5485 2N5486 2N5949 2N5950 2N5951 2N5952 -
OCR Scan
Abstract: , One. ^smi-donciucto'i TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.S.A. 2N5952 N-Channel RF Ampifier â'¢ This device is designed primarily for electronic switching applications such as low on resistance analog switching. â'¢ Sourced from process 50. Absolute Maximum Ratings * Tc=25 C unless otherwise noted Symbol Parameter Value Tj, TSTG Forward Gate Current Operating and Storage Junction New Jersey Semiconductor
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100MH 27TYP
Abstract: 2.5 6.0 10 15 GSD TO-92 2N5951 3.0 100 75 100 6.0 2.0 5.0 100 30 2.0 5.0 7.0 13 GSD TO-92 2N5952 1.0 -
OCR Scan
J-FET 2N3819
Abstract: 2.0 5.0 7.0 13 GSD TO-92 2N5952 1.0 100 75 100 6.0 2.0 5.0 100 Central Semiconductor
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2N3819 equivalent datasheet 2n5484 jfet 2n4416 jfet jfet transistor n-channel to 92 transistor 2N3819 equivalent 2N5952
Abstract: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 · Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N5952 - Central Semiconductor 2N5952 - -
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Abstract: 2N5952 Transistors N-Channel JFET Military/High-RelN V(BR)DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15 V(GS)off Min. (V)1.3 I(DSS) Max. (A)8.0m V(GS)off Max. (V)3.5 @Vgs (test) (V)0 @V(DS) (V) (Test Condition)15 @I(D) (A) (Test Condition)100n I(DSS) Min. (A)4.0m I(DSS) Max. (A)8.0m @V(DS) (V) (Test Condition)15 r(DS)on Max. (Ohms)300 g(fs) Min. (S) Trans American Microsemiconductor
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Abstract: 2N5949 2N5950 2N5951 2N5952 2N5953 J300 MMBFJ304 J304 J305 MMBFJ305 MMBFJ309 J309 MMBFJ310 J31Q U309 U310 -
OCR Scan
2N5245 2N3819 NATIONAL SEMICONDUCTOR National 2N3819 2n3819 surface mount 2n4416 national N CHANNEL JFET 2N3819 PN4416 MMBF4416 2N5397 MMBF5484 MMBF5485
Abstract: Junction FETs* RF Amplifiers N-Channel CASE TYPE NO. Re Yfs @ (mmho) f MIN (MHz) Re Yos @ (umho) f MAX Ciss (pF) Crss (pF) NF @ (dB) RG=1K (V) MIN V(BR)GSS TO-72 VGS(off) (V) MIN MAX TO-92 IDSS (mA) MIN MAX PIN OUT (MHz) MAX MAX MAX f(MHz) TO-92 2N3819 TO-72 2N4416 TO-72 2N4416A TO-92 2N5484 TO-92 2N5485 TO-92 2N5486 TO-92 2N5949 TO-92 2N5950 TO-92 2N5951 TO-92 2N5952 TO-92 2N5953 1.6 4.0 4.0 2.5 3.0 3.5 3.0 3.0 3.0 1.0 1.0 100 400 400 100 400 400 100 100 100 100 100 -100 100 75 Central Semiconductor
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Abstract: 15 100 - - 6 2.0 2N5952 30 1.30 4.5 15 100 - - 6 2.0 Taitron Components
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2N5457 2N5640 2N3971 2N4393 2n5484 jfet equivalent for 2N3819 J174 2N5639 2N4091 2N4092
Abstract: 2N548S 2N5486 2N5949 2N5950 2N5951 2N5952 2N5953 J300 J304 J305 J309 J310 PN4416 TO-92 TO-92 TO-92 TO -
OCR Scan
2N5248
Abstract: CM 2N5484 2N5485 2N5486 2N5949 2N5950 2N5951 2N5952 2N5953 J 300 J304 J305 J309 J310 PN4416 TI m -
OCR Scan
4008e j300 J304 J305 j310 SSS88
Abstract: 2N3819 2N4416 2N4416A 2N5484 2N5485 2N5486 2N5949 2N5950 2N5951 2N5952 2N5953 1.6 4.0 4.0 2.5 3.0 3.5 -
OCR Scan
PN4360 pn3687 2N4220 2N4221 2N4222 2N4340 2N5556 2N5557
Abstract: 2.5C â'¬.3 15 1X - - â'¬ 23 2N5951 2N5952 X X 2.X 1.X £.3 4.5 15 15 1X 1X â'¢ â'¬ â'¬ 23 23 l -
OCR Scan
2N5436 2N5843 BP245A PW392 PN4383 2W338 2N2971 pn393 1C33-2C33
Abstract: 2N5949 2N5950 2N5951 2N5952 2N5953 2N6427 N Channel N Channel N Channel N Channel N Channel N Channel -
OCR Scan
bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference jFET Array TO-266AA 1N914 1N4148 1N4150 1N5229 1N5230 1N5231
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