NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM , Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 , Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 , MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM Products , Thermal Resistance Vcc = 50V, Pout = 1000W F = 1030 MHz RTH(JC) - 0.015 °C/W Input ... | Original |
4 pages, |
MAPRST1030-1KS transistor 1000W transistor ballast 1000W MAPRST1030-1KS abstract |
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| Abstract: CASE OUTLINE 55SW, Style 1 Common Base The ITC1000 ITC1000 is a common base bipolar transistor. It is , metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low , 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% ... | Original |
2 pages, |
ITC1000 1030mhz 1000W TRANSISTOR df transistor 990305-BEHRE 990305-BEHRE abstract |
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| Abstract: OUTLINE 55SW, Style 1 Common Base The ITC1100 ITC1100 is a common base bipolar transistor. It is designed for , metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low , Impedance (Circuit load impedance @ test cond.) Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = ... | Original |
1 pages, |
transistor DF 50 transistor 1000W ITC1100 1000W TRANSISTOR 1030mhz ITC1100 abstract |
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| Abstract: OUTLINE 55SW, Style 1 Common Base The ITC1100 ITC1100 is a common base bipolar transistor. It is designed for , metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low , Impedance (Circuit load impedance @ test cond.) Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = ... | Original |
2 pages, |
ITC1100 1000W TRANSISTOR 1000w 1030mhz transistor DF 50 transistor 1000W ITC1100 abstract |
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| Abstract: HVV1011-1000L HVV1011-1000L (Preliminary Datasheet) L-Band High Power Pulsed Transistor 32us on/18us off x 48 , HVV1011-1000L HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed , operation. Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 1000W Max 20:1 , VGS=0V,VDS=50V VGS=5V,VDS=0V POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 MHz MHz MHz MHz MHz Typ 102 ... | Original |
3 pages, |
HVV1011-1000L HVV1011-1000L abstract |
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| Abstract: HVV1011-1000L HVV1011-1000L (Preliminary Datasheet) L-Band High Power Pulsed Transistor 32us on/18us off x 48 , HVV1011-1000L HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed , 1000W Max 20:1 Units VSWR F = 1030 MHz ELECTRICAL CHARACTERISTICS Symbol VBR(DSS) IDSS , ,ID=10mA VGS=0V,VDS=50V VGS=5V,VDS=0V POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 MHz MHz MHz MHz Typ 102 ... | Original |
2 pages, |
interrogator HVV1011-1000L diode gp 429 HVV1011-1000L abstract |
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| Abstract: AVIONICS PULSED POWER TRANSISTOR 1000 WATTS, 1030 MHz, 10us PULSE, 1% DUTY 23 Jan 2007 , Resistance Vcc = 50V, Pout = 1000W F = 1030 MHz RTH(JC) - 0.015 °C/W Input Power Vcc = 50V, Pout = 1000W F = 1030 MHz PIN - 158 W Power Gain Vcc = 50V, Pout = 1000W F = 1030 MHz GP 8.0 - dB Collector Efficiency Vcc = 50V, Pout = 1000W F = 1030 MHz C 45 - % Input Return Loss Vcc = 50V, Pout = 1000W F = 1030 MHz RL - ... | Original |
4 pages, |
MAPRST1030-1KS 1000W TRANSISTOR 1030 mhz transistor ballast 1000W MAPRST1030-1KS abstract |
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| Abstract: 0405SC-1000M 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power , W, Pulsed Pulse Width = 300us, DF = 10% F = 450 MHz, Pout =1000W F = 406 MHz, Pout = 1000W F = , 0405SC-1000M 0405SC-1000M Impedance Information Input Matching Network ZS ZL Pout = 1000W min Vdd = 125V ... | Original |
4 pages, |
Static Induction Transistor SIT 0405SC-1000M electrolytic capacitor, 1uF J29-4 transistor sit "silicon carbide" FET sit transistor "Static Induction Transistor" SIT Static Induction Transistor J294 0405SC-1000M abstract |
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| Abstract: STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar , , Pout =1000W F = 406 MHz, Pout = 1000W F = 450 MHz, Pin = 180 W Set for Idq(ave) = 250mA 8 8.5 , 0.98 1.49 + j 1.43 * VDD = 125V, IDQ = 250 mA, Pout = 1000W * Pulse Format: 300us, 10% Long Term ... | Original |
5 pages, |
sit transistor 0405SC-1000M "Static Induction Transistor" SIT Static Induction Transistor 1000uf electrolytic capacitor "silicon carbide" FET 0405SC-1000M abstract |
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| Abstract: AVF1000 AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG (B) A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 · Internal Input/Output Matching Networks · PG = 6.0 dB at 1000W/1090 MHz · OmnigoldTM Metalization System 4X.060 R F .050 NOM. .210 G H I J K L MAXIMUM RATINGS MAXIMUM DIM MINIMUM inches / mm ... | Original |
1 pages, |
c 1685 AVF1000 transistor 1334 AVF1000 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| DISS Power Dissipation* (T C 3 805C) 1000 W I C Device Current* 28 A V CC Collector ST | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS MSC81400M MSC81400M MSC81400M MSC81400M TRANSISTORS .400 x .500 2LFL (S038) hermetically sealed . REFRACTORY\GOLD METALLIZATION . RUGGEDIZED " transistor is a high peak pulse power device specifically de- signed for DME/TACAN avionics applications www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2749-v3.htm |
STMicroelectronics | 25/05/2000 | 5.66 Kb | HTM | 2749-v3.htm |
| Parameter Value Unit P DISS Power Dissipation* (T C 3 805C) 1000 W I C Device Current* 28 A V CC ST | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS MSC81400M MSC81400M MSC81400M MSC81400M October 1992 AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038) hermetically DESCRIPTION The MSC81400M MSC81400M MSC81400M MSC81400M "Super Power" transistor is a high peak pulse power device specifically de www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2749.htm |
STMicroelectronics | 20/10/2000 | 5.88 Kb | HTM | 2749.htm |
| Value Unit P DISS Power Dissipation* (T C 3 805C) 1000 W I C Device Current* 28 A V CC Collector ST | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS MSC81400M MSC81400M MSC81400M MSC81400M AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Document Number: 2749 Date Update: 8/4/94 Pages Format October 1992 AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038 DESCRIPTION The MSC81400M MSC81400M MSC81400M MSC81400M "Super Power" transistor is a high peak pulse power device specifically de- signed www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2749-v1.htm |
STMicroelectronics | 02/04/1999 | 3.86 Kb | HTM | 2749-v1.htm |
| Value Unit P DISS Power Dissipation* (T C 3 805C) 1000 W I C Device Current* 28 A V CC Collector ST | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS MSC81400M MSC81400M MSC81400M MSC81400M AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Document Number: 2749 Date Update: 8/4/94 Pages Format October 1992 AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038 DESCRIPTION The MSC81400M MSC81400M MSC81400M MSC81400M "Super Power" transistor is a high peak pulse power device specifically de- signed www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2749-v2.htm |
STMicroelectronics | 14/06/1999 | 3.82 Kb | HTM | 2749-v2.htm |
| , extraction procedure, installation procedure, limitations and application. The BLF578 BLF578 BLF578 BLF578 is a 1000 W pulsed RF AN_BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 LDMOS Transistor Model Rev. 01 - 25-09-2008 Application document describes the BLF578 BLF578 BLF578 BLF578 LDMOS transistor model including its installation, usage and verification. NXP Semiconductors AN_BLF578 BLF578 BLF578 BLF578 BLF578LDMOS BLF578LDMOS BLF578LDMOS BLF578LDMOS transistor model © NXP B.V. 2008. All rights reserved BLF578LDMOS BLF578LDMOS BLF578LDMOS BLF578LDMOS transistor model Table of contents 1. Introduction www.datasheetarchive.com/download/61813360-596980ZC/71691.zip (AN_BLF578_LDMOS_Transistor_Model_REV0p1.pdf) |
NXP | 23/10/2012 | 57734.64 Kb | ZIP | 71691.zip |
| , extraction procedure, installation procedure, limitations and application. The BLF578 BLF578 BLF578 BLF578 is a 1000 W pulsed RF AN_BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 LDMOS Transistor Model Rev. 01 - 25-09-2008 Application document describes the BLF578 BLF578 BLF578 BLF578 LDMOS transistor model including its installation, usage and verification. NXP Semiconductors AN_BLF578 BLF578 BLF578 BLF578 BLF578LDMOS BLF578LDMOS BLF578LDMOS BLF578LDMOS transistor model © NXP B.V. 2008. All rights reserved BLF578LDMOS BLF578LDMOS BLF578LDMOS BLF578LDMOS transistor model Table of contents 1. Introduction www.datasheetarchive.com/download/15355188-596976ZC/71129.zip (AN_BLF578_LDMOS_Transistor_Model_REV0p1.pdf) |
NXP | 23/10/2012 | 56130.47 Kb | ZIP | 71129.zip |
| , extraction procedure, installation procedure, limitations and application. The BLF578 BLF578 BLF578 BLF578 is a 1000 W pulsed RF AN_BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 LDMOS Transistor Model Rev. 01 - 25-09-2008 Application document describes the BLF578 BLF578 BLF578 BLF578 LDMOS transistor model including its installation, usage and verification. NXP Semiconductors AN_BLF578 BLF578 BLF578 BLF578 BLF578LDMOS BLF578LDMOS BLF578LDMOS BLF578LDMOS transistor model © NXP B.V. 2008. All rights reserved BLF578LDMOS BLF578LDMOS BLF578LDMOS BLF578LDMOS transistor model Table of contents 1. Introduction www.datasheetarchive.com/download/31656534-597040ZC/blf578_ads_model.zip (AN_BLF578_LDMOS_Transistor_Model_REV0p1.pdf) |
NXP | 22/10/2012 | 424.11 Kb | ZIP | blf578_ads_model.zip |
| , extraction procedure, installation procedure, limitations and application. The BLF578 BLF578 BLF578 BLF578 is a 1000 W pulsed RF AN_BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 BLF578 LDMOS Transistor Model Rev. 01 - 25-09-2008 Application document describes the BLF578 BLF578 BLF578 BLF578 LDMOS transistor model including its installation, usage and verification. NXP Semiconductors AN_BLF578 BLF578 BLF578 BLF578 BLF578LDMOS BLF578LDMOS BLF578LDMOS BLF578LDMOS transistor model © NXP B.V. 2008. All rights reserved BLF578LDMOS BLF578LDMOS BLF578LDMOS BLF578LDMOS transistor model Table of contents 1. Introduction www.datasheetarchive.com/download/22204674-596971ZC/50961.zip (AN_BLF578_LDMOS_Transistor_Model_REV0p1.pdf) |
NXP | 23/10/2012 | 56632.22 Kb | ZIP | 50961.zip |
| (Pin 3) -1100 -1000 -880 mV R (IC) Collector Current Sensing Input Resistance 1000 W V 7(th CONNECTIONS DIP8 (Plastic Package) ORDER CODE : TEA2018A TEA2018A TEA2018A TEA2018A . DIRECT DRIVE OF THE EXTERNAL SWITCHING TRANSISTOR of the transistor is triggered by the fall of the oscillator sawtooth which acts as clock signal. The ) the sawtooth waveform representing the collector current of the switching transistor, sampled across period, a current pulse ensures fast transistor switch-on. This pulse performs also the t on www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1263.htm |
STMicroelectronics | 25/05/2000 | 13.14 Kb | HTM | 1263.htm |
| 3) -1100 -1000 -880 mV R (IC) Collector Current Sensing Input Resistance 1000 W V 7(th . DIRECT DRIVE OF THE EXTERNAL SWITCHING TRANSISTOR . POSITIVE AND NEGATIVE OUTPUT CUR- RENTS UP TO beginning of the conduction time of the transistor is triggered by the fall of the oscillator sawtooth representing the collector current of the switching transistor, sampled across the emitter shunt resistor pulse ensures fast transistor switch-on. This pulse performs also the t on(min) function at www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1263-v1.htm |
STMicroelectronics | 25/05/2000 | 12.35 Kb | HTM | 1263-v1.htm |