500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
BCV26_L99Z Fairchild Semiconductor Corporation PNP Darlington Transistor pdf Buy
KSA1156YSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor pdf Buy
KSA1156OSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor pdf Buy

Search Stock

Part Manufacturer Description Last Check Distributor Ordering
TRANSISTOR Fairchild Semiconductor BULK / SEC PKG 25 (Sep 2016) New Advantage Buy
TRANSISTOR FSC BULK / SEC PKG 25 (Sep 2016) New Advantage Buy
TRANSISTOR MICROSEMI BULK / SEC. PKG 45 (Sep 2016) New Advantage Buy
TRANSISTOR RAYTHEON BULK / SEC PKG 3 (Sep 2016) New Advantage Buy
TRANSISTOR KIT Jameco 560 Piece Transistor Component Kit 38 from $59.95 (Sep 2016) Jameco Electronics Buy
TRANSISTOR-/TEMP-ADAPTER Voltcraft VOLTCRAFT® Transistor-/Temperatur-Messadapter, Passend für VOLTCRAFT® VC100-Serie 118 from €6.16 (Sep 2016) Conrad Electronic Buy

transistor 1000W

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty Features · · , contained herein without notice. MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s , -1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty RF Power Transfer Curve (Gain & , notice. MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty Test , Load Mismatch Tolerance Load Mismatch Stability 1 VCE = 50V Vcc = 50V, Pout = 1000W Vcc = 50V, Pout = ... M/A-COM
Original
datasheet

4 pages,
175.86 Kb

1030 transistor 1000W MAPRST1030-1KS TEXT
datasheet frame
Abstract: MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM , Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 , Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 , . MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM Products , Thermal Resistance Vcc = 50V, Pout = 1000W F = 1030 MHz RTH(JC) - 0.015 °C/W Input ... M/A-COM
Original
datasheet

4 pages,
133.38 Kb

MAPRST1030-1KS 1030 mhz NPN 1000w transistor ballast 1000W transistor 1000W TEXT
datasheet frame
Abstract: CASE OUTLINE 55SW, Style 1 Common Base The ITC1000 ITC1000 is a common base bipolar transistor. It is , metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low , 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1uS, DF ... Ghz Technology
Original
datasheet

2 pages,
50.52 Kb

transistor 1000W DF 1 ITC1000 1030mhz 1000W TRANSISTOR df transistor 990305-BEHRE TEXT
datasheet frame
Abstract: OUTLINE 55SW, Style 1 Common Base The ITC1100 ITC1100 is a common base bipolar transistor. It is designed for , metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low , Impedance (Circuit load impedance @ test cond.) Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1uS, DF=1% Vcc = 50V, F = ... Ghz Technology
Original
datasheet

1 pages,
16.94 Kb

ITC1100 1000W TRANSISTOR POWER 1000W TRANSISTOR 1030mhz transistor 1000W transistor DF 50 TEXT
datasheet frame
Abstract: AVIONICS PULSED POWER TRANSISTOR 1000 WATTS, 1030 MHz, 10us PULSE, 1% DUTY 23 Jan 2007 , Resistance Vcc = 50V, Pout = 1000W F = 1030 MHz RTH(JC) - 0.015 °C/W Input Power Vcc = 50V, Pout = 1000W F = 1030 MHz PIN - 158 W Power Gain Vcc = 50V, Pout = 1000W F = 1030 MHz GP 8.0 - dB Collector Efficiency Vcc = 50V, Pout = 1000W F = 1030 MHz C 45 - % Input Return Loss Vcc = 50V, Pout = 1000W F = 1030 MHz RL - ... M/A-COM
Original
datasheet

4 pages,
113.42 Kb

MAPRST1030-1KS J22 transistor 1000W TRANSISTOR 1030 mhz transistor 1000W transistor ballast 1000W TEXT
datasheet frame
Abstract: HVV1011-1000L HVV1011-1000L (Preliminary Datasheet) L-Band High Power Pulsed Transistor 32us on/18us off x 48 , HVV1011-1000L HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed , operation. Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 1000W Max 20 , =0V,ID=10mA VGS=0V,VDS=50V VGS=5V,VDS=0V POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 MHz MHz MHz MHz MHz Typ 102 ... HVVi Semiconductors
Original
datasheet

3 pages,
213.75 Kb

1030 PULSED 1000w power supply transistor 1000W HVV1011-1000L TEXT
datasheet frame
Abstract: HVV1011-1000L HVV1011-1000L (Preliminary Datasheet) L-Band High Power Pulsed Transistor 32us on/18us off x 48 , -1000L -1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications , operation. Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 1000W Max 20 , =50V VGS=5V,VDS=0V POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 MHz MHz , -01-POXXXX -01-POXXXX Draft 07/XX/09 07/XX/09 1 HVV1011-1000L HVV1011-1000L (Preliminary Datasheet) L-Band High Power Pulsed Transistor 32us ... HVVi Semiconductors
Original
datasheet

2 pages,
169.18 Kb

interrogator HVV1011-1000L diode gp 429 TEXT
datasheet frame
Abstract: DESCRIPTION PACKAGE The high power HV1011-1000L HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency , Mismatch Tolerance Test Condition POUT = 1000W Max 20:1 Units VSWR F = 1030 MHz , Efficiency Pulse Droop Burst Droop Conditions VGS=0V,ID=10mA VGS=0V,VDS=50V VGS=5V,VDS=0V POUT=1000W, F=1030 MHz POUT=1000W, F=1030 MHz POUT=1000W, F=1030 MHz POUT=1000W, F=1030 MHz POUT=1000W, F ... Advanced Semiconductor
Original
datasheet

3 pages,
368.83 Kb

HV1011-1000L TEXT
datasheet frame
Abstract: AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications , Pulse Width = 300us, DF = 10% F = 450 MHz, Pout =1000W F = 406 MHz, Pout = 1000W F = 450 MHz, Pin = 180 , = 250 mA, Pout = 1000W * Pulse Format: 300us, 10% Long Term Duty Factor Microsemi PPG Inc ... Microsemi
Original
datasheet

5 pages,
284.53 Kb

transistor 406 specification silicon carbide 1000uf electrolytic capacitor transistor 1000W j130 fet 33 J 250 capacitor 0405SC-1000M TEXT
datasheet frame
Abstract: STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar , , Pout =1000W F = 406 MHz, Pout = 1000W F = 450 MHz, Pin = 180 W Set for Idq(ave) = 250mA 8 8.5 , 0.98 1.49 + j 1.43 * VDD = 125V, IDQ = 250 mA, Pout = 1000W * Pulse Format: 300us, 10% Long Term ... Microsemi
Original
datasheet

5 pages,
284.53 Kb

transistor sit "Static Induction Transistor" 0405SC-1000M static induction transistor sit transistor 1000UF 20V CAPACITOR silicon carbide SIT Static Induction Transistor transistor 406 specification 1000uf electrolytic capacitor "silicon carbide" FET static induction transistor SIT TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/97532278-740276ZC/20823.pl
SGS-Thomson 07/08/1995 299.15 Kb PL 20823.pl
plug must not exceed 1000W. III.2 - Schematics (see Figures 15 and 16) This section gives the triggering current of 10mA (at 255C). The current is provided by the amplifier stage (transistor), and the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1751.htm
STMicroelectronics 20/10/2000 57.1 Kb HTM 1751.htm
220VAC 220VAC OCCURS RESPONSE 100MS 100MS FALLS DOWN TRANSISTOR DATA OFF STABILITIES LATCHES HOLD NONVOLATILE CAUSED DISPLAY LESS QUESTION DELAYED DOWN TRANSISTOR DATA OFF ACTUALLY INVERTED CAUSES OBTAINED HOLD GOOD ADAPTED WERE CAUSED LESS DOWN THEORETICALLY IMPEDANCES LOSSES CHANGES TRANSISTOR DATA BUDGET OFF ORDER TRANSISTOR MAINTAINED OFF ORDER 2.2K TAPPED CLOCKS THUS CAUSES IMPLEMENTATION PRODUCTION AFFECTING ALUMINUM DYNAMICS TRANSISTOR LEAKAGES ARRAY INVERTED LATCHES THUS HIGHLY 5.000V INVERTER PERMIT PROVIDING FORM ACT
/datasheets/files/linear/lview4/parts.edb
Linear 15/02/2000 7168.02 Kb EDB parts.edb
plug must not exceed 1000W. III.2 - Schematics (see Figures 15 and 16) This section gives the triggering current of 10mA (at 255C). The current is provided by the amplifier stage (transistor), and the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1751-v2.htm
STMicroelectronics 14/06/1999 52.96 Kb HTM 1751-v2.htm
connected to the plug must not exceed 1000W. III.2 - Schematics (see Figures 15 and 16) This section 255C). The current is provided by the amplifier stage (transistor), and the pulse width is programmed
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1751-v3.htm
STMicroelectronics 25/05/2000 54.81 Kb HTM 1751-v3.htm
plug must not exceed 1000W. III.2 - Schematics (see Figures 15 and 16) This section gives the triggering current of 10mA (at 255C). The current is provided by the amplifier stage (transistor), and the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1751-v1.htm
STMicroelectronics 02/04/1999 52.99 Kb HTM 1751-v1.htm
220VAC 220VAC OCCURS RESPONSE 100MS 100MS FALLS DOWN TRANSISTOR DATA OFF STABILITIES LATCHES HOLD NONVOLATILE CAUSED DISPLAY LESS QUESTION DELAYED DOWN TRANSISTOR DATA OFF ACTUALLY INVERTED CAUSES OBTAINED HOLD GOOD LOSSES CHANGES TRANSISTOR DATA BUDGET OFF ORDER DELIVERS REESTABLISHED INDUSTRIAL ACTUALLY DEMODULATOR TRANSISTOR MAINTAINED OFF ORDER 2.2K TAPPED CLOCKS THUS CAUSES IMPLEMENTATION PRODUCTION AFFECTING ALUMINUM UNGROUND WERE RATIOMETRICALLY LESS DOWN DYNAMICS TRANSISTOR LEAKAGES ARRAY INVERTED LATCHES THUS HIGHLY
/datasheets/files/linear/lview3/parts-v1.edb
Linear 08/10/1998 5000.33 Kb EDB parts-v1.edb
No abstract text available
/download/59539157-592504ZC/price-11.zip ()
NEDIS 28/02/2001 1026.63 Kb ZIP price-11.zip
220VAC 220VAC OCCURS RESPONSE 100MS 100MS FALLS DOWN TRANSISTOR DATA OFF STABILITIES LATCHES HOLD NONVOLATILE CAUSED DISPLAY LESS QUESTION DELAYED DOWN TRANSISTOR DATA OFF ACTUALLY INVERTED CAUSES OBTAINED HOLD GOOD LOSSES CHANGES TRANSISTOR DATA BUDGET OFF ORDER DELIVERS REESTABLISHED INDUSTRIAL ACTUALLY DEMODULATOR TRANSISTOR MAINTAINED OFF ORDER 2.2K TAPPED CLOCKS THUS CAUSES IMPLEMENTATION PRODUCTION AFFECTING ALUMINUM UNGROUND WERE RATIOMETRICALLY LESS DOWN DYNAMICS TRANSISTOR LEAKAGES ARRAY INVERTED LATCHES THUS HIGHLY
/datasheets/files/linear/lview3/parts.ebd
Linear 08/10/1998 5000.33 Kb EBD parts.ebd
No abstract text available
/download/4636711-592506ZC/price-13.zip ()
NEDIS 28/02/2001 1026.63 Kb ZIP price-13.zip