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LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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TRF7003PK Texas Instruments Silicon RFMOS Discrete Transistor 3-SOT-89 ri Buy

transistor 1000W

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Abstract: MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM , Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 , Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 , MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty M/A-COM Products , Thermal Resistance Vcc = 50V, Pout = 1000W F = 1030 MHz RTH(JC) - 0.015 °C/W Input ... Original
datasheet

4 pages,
133.38 Kb

MAPRST1030-1KS 1030 mhz NPN 1000w transistor ballast 1000W transistor 1000W MAPRST1030-1KS abstract
datasheet frame
Abstract: MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty Features · · , contained herein without notice. MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s , Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty RF Power Transfer Curve (Gain & , notice. MAPRST1030-1KS MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty Test , Load Mismatch Tolerance Load Mismatch Stability 1 VCE = 50V Vcc = 50V, Pout = 1000W Vcc = 50V, Pout = ... Original
datasheet

4 pages,
175.86 Kb

transistor 1000W MAPRST1030-1KS MAPRST1030-1KS abstract
datasheet frame
Abstract: OUTLINE 55SW, Style 1 Common Base The ITC1100 ITC1100 is a common base bipolar transistor. It is designed for , metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low , Impedance (Circuit load impedance @ test cond.) Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1µS, DF=1% Vcc = 50V, F = ... Original
datasheet

1 pages,
16.94 Kb

ITC1100 1000W TRANSISTOR POWER 1000W TRANSISTOR 1030mhz transistor 1000W transistor DF 50 ITC1100 abstract
datasheet frame
Abstract: CASE OUTLINE 55SW, Style 1 Common Base The ITC1000 ITC1000 is a common base bipolar transistor. It is , metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low , 50V, F = 1030MHz, Pout=1000W, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W, PW=1µS, DF=1% ... Original
datasheet

2 pages,
50.52 Kb

transistor 1000W DF 1 ITC1000 1030mhz 1000W TRANSISTOR df transistor 990305-BEHRE 990305-BEHRE abstract
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Abstract: OUTLINE 55SW, Style 1 Common Base The ITC1100 ITC1100 is a common base bipolar transistor. It is designed for , metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low , Impedance (Circuit load impedance @ test cond.) Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1µS, DF=1% Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1µS, DF=1% Vcc = 50V, F = ... Original
datasheet

2 pages,
129.52 Kb

ITC1100 1000W TRANSISTOR 1000w 1030mhz transistor DF 50 transistor 1000W ITC1100 abstract
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Abstract: HVV1011-1000L HVV1011-1000L (Preliminary Datasheet) L-Band High Power Pulsed Transistor 32µs on/18us off x 48 , HVV1011-1000L HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed , operation. Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 1000W Max 20:1 , VGS=0V,VDS=50V VGS=5V,VDS=0V POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 MHz MHz MHz MHz MHz Typ 102 ... Original
datasheet

3 pages,
213.75 Kb

1000w power supply transistor 1000W HVV1011-1000L HVV1011-1000L abstract
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Abstract: HVV1011-1000L HVV1011-1000L (Preliminary Datasheet) L-Band High Power Pulsed Transistor 32µs on/18us off x 48 , HVV1011-1000L HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed , 1000W Max 20:1 Units VSWR F = 1030 MHz ELECTRICAL CHARACTERISTICS Symbol VBR(DSS) IDSS , ,ID=10mA VGS=0V,VDS=50V VGS=5V,VDS=0V POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 POUT=1000W,F=1030 MHz MHz MHz MHz Typ 102 ... Original
datasheet

2 pages,
169.18 Kb

interrogator HVV1011-1000L diode gp 429 HVV1011-1000L abstract
datasheet frame
Abstract: AVIONICS PULSED POWER TRANSISTOR 1000 WATTS, 1030 MHz, 10us PULSE, 1% DUTY 23 Jan 2007 , Resistance Vcc = 50V, Pout = 1000W F = 1030 MHz RTH(JC) - 0.015 °C/W Input Power Vcc = 50V, Pout = 1000W F = 1030 MHz PIN - 158 W Power Gain Vcc = 50V, Pout = 1000W F = 1030 MHz GP 8.0 - dB Collector Efficiency Vcc = 50V, Pout = 1000W F = 1030 MHz C 45 - % Input Return Loss Vcc = 50V, Pout = 1000W F = 1030 MHz RL - ... Original
datasheet

4 pages,
113.42 Kb

MAPRST1030-1KS 1000W TRANSISTOR 1030 mhz transistor 1000W transistor ballast 1000W MAPRST1030-1KS abstract
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Abstract: 0405SC-1000M 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power , W, Pulsed Pulse Width = 300us, DF = 10% F = 450 MHz, Pout =1000W F = 406 MHz, Pout = 1000W F = , 0405SC-1000M 0405SC-1000M Impedance Information Input Matching Network ZS ZL Pout = 1000W min Vdd = 125V ... Original
datasheet

4 pages,
200.64 Kb

electrolytic capacitor, 1uF J-032 J072 silicon carbide 0405SC-1000M static induction transistor transistor 406 specification Static Induction Transistor SIT electrolytic capacitor, .1uF J29-4 transistor 1000W "silicon carbide" FET 0405SC-1000M abstract
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Abstract: AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications , Pulse Width = 300us, DF = 10% F = 450 MHz, Pout =1000W F = 406 MHz, Pout = 1000W F = 450 MHz, Pin = 180 , 250 mA, Pout = 1000W * Pulse Format: 300µs, 10% Long Term Duty Factor Microsemi PPG Inc. reserves ... Original
datasheet

5 pages,
284.53 Kb

silicon carbide 1000uf electrolytic capacitor transistor 1000W 33 J 250 capacitor j130 fet 0405SC-1000M 0405SC-1000M abstract
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plug must not exceed 1000W. III.2 - Schematics (see Figures 15 and 16) This section gives the triggering current of 10mA (at 255C). The current is provided by the amplifier stage (transistor), and the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1751-v1.htm
STMicroelectronics 02/04/1999 52.99 Kb HTM 1751-v1.htm
(BTA08-600TW BTA08-600TW BTA08-600TW BTA08-600TW) so the load connected to the plug must not exceed 1000W. III.2 - Schematics (see Figures 15 amplifier stage (transistor), and the pulse width is programmed by software. III.4.3 - Timing
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1751-v3.htm
STMicroelectronics 25/05/2000 54.81 Kb HTM 1751-v3.htm
connected to the plug must not exceed 1000W. III.2 - Schematics (see Figures 15 and 16) This section 255C). The current is provided by the amplifier stage (transistor), and the pulse width is programmed
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1751.htm
STMicroelectronics 20/10/2000 57.1 Kb HTM 1751.htm
plug must not exceed 1000W. III.2 - Schematics (see Figures 15 and 16) This section gives the triggering current of 10mA (at 255C). The current is provided by the amplifier stage (transistor), and the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1751-v2.htm
STMicroelectronics 14/06/1999 52.96 Kb HTM 1751-v2.htm
No abstract text available
www.datasheetarchive.com/download/97532278-740276ZC/20823.pl
SGS-Thomson 07/08/1995 299.15 Kb PL 20823.pl