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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor t220

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: @ SP T SIGNAL PROCESSING TECHNOLOGIES SP T220 FAST SETTLING, WIDEBAND OPERATIONAL AMPLIFIER General Description T he SP T220 is a w ide bandw idth D C -coupled operational a m p li­ fie r that , rate (7000V /nsec) m ake the SP T220 a superior a m plifier for pulsed and digital applications. S ince therm al tail has been elim inated, the SP T220 settles fast and rem ains solidly at the desired , T220 to achieve distortion levels uncom m only low relative to conventional op amps. Using the SP -
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6v battery charger lm317 automatic

Abstract: LM1084T-ADJ basic functional diagram in the datasheets. Notice that the pass transistor consists of a single NPN and , regulator uses a single PNP pass transistor that has a dropout voltage equal to the PNP Vsat. Lower dropout voltage means greater efficiency capability because of minimized power loss from the pass transistor , bipolar process with transistor count of 56. 1.3 Reliability/Qualification Overview The LM1084/85/86 , The topology is basically that of the LM317 except for the pass transistor. Instead of a Darlingtion
National Semiconductor
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6v battery charger lm317 automatic LM1084T-ADJ transistor t220 LM1086-3.3 LM1086-3 lm1084 LM1084 LM1085 LM1086 LM1084/LM1085/LM1086 M1086T-ADJ LM1086T-3

transistor t220

Abstract: BUV46 BUV46/FI BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS s s s s s s SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION FAST SWITCHING SPEED U.L. RECOGNISED ISOWATT220 PACKAGE (U.L. FILE # E81734 (N) APPLICATIONS s GENERAL PURPOSE SWITCHING s SWITCH MODE POWER SUPPLIES s ELECTRONIC BALLASTS FOR , Temperature Tj June 1997 Max. O perating Junction Temperature A ISOW AT T220 70 30 W
STMicroelectronics
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BUV46FI BUV46 O-220 BUV46/FI-BUV46A P011G

BUT11 equivalent

Abstract: transistor t220 TO- 220 I 0\ â /AT T220 \ y o.e. OP ER ATI r In , thermal resistance of a transistor heatsink assembly, using ISOWATT220 package. The total thermal
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BUT11 equivalent but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI BUT11 BUT11/A BUT11FI/AFI BUT11/FI BUT11A/AFI ISOWATT-220

TT220

Abstract: transistor t220 T220 PACKAGE CHAR A C TERISTIC S AND APPLICATIO N. ISOWATT22C) is fully isolated to 2000V dc. Its th e , the elem ents con trib u tin g to the therm al resistance of transistor heatsink assembly, using ISOW
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TT220 BUZ71 dc to ac TT 220 BUZ71 BUZ71FI ATT220

TRANSISTOR MOSFET K 1249

Abstract: transistor t220 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR FEATURES â'¢ Specially designed for use at 5 V supply voltage â'¢ Short channel transistor with high forward transfer admittance to input capacitance ratio â'¢ Low noise gain controlled amplifier up to 1 GHz â'¢ Superior , field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier , 32 k£2 M 80 kiì T220 tíl 0 2 4 6 8 vgg=vds(v) Vg2-s = 4 v. Rgi connected to VGG; T, = 25 :'C.
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TRANSISTOR MOSFET K 1249 731 MOSFET dual-gate MLD150 Dual-Gate Mosfet mosfet 352

NIKKO NR 9600

Abstract: Triac bt 808 600cw DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , FORSCHUNGSZENTRUM MIKRO. DRESDEN ZMD CARTER SEMICONDUCTORS INC.* CAR FUJI ELECTRIC CO. FJI CARTER TRANSISTOR , ELECTRONICS CLX GD RECTIFIERS Ud. GDR CLEVITE TRANSISTOR PRODUCTS* ITT GEC PLESSEY SEMICONDUCTORS Power , (USA) HRS COMMUNICATIONS TRANSISTOR CORP.* CTC GENERAL INSTRUMENT CORPORATION GIC COMPAGNIE DE , SEMICONDUCTOR DEVICE Corp. CSD GENERAL TRANSISTOR CORP. GTC CONTINENTAL DEVICE OF INDIA LTD. CIL GENNUM CORP
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NIKKO NR 9600 Triac bt 808 600cw GDS C25/0 BT135 2U12 sony KSM 213 DCP
Abstract: S G S -T H O M S O N STP3NA80 STP3NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE Voss STP3NA80 STP3NA80FI . . . . . . . flosionl 1» 800 V 800 V I < 4 .5 11 1 1 < , For Soldering Puroose T' ; IS Q W A T T220 | 0.8 'C /W 52.5 0.5 300 °C,'W °C/W -
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ATT22Q STP3NA80/F1 7T2T237

BS421

Abstract: Unitrode Semiconductor Programmable DESCRIPTION The BISYN is a bipolar junction transistor specifically designed to perform the , Isolation. BENDING THE LEADS Whenever the leads of the T-220 are to be formed, whether by a special
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BS421 Unitrode Semiconductor

P3055E

Abstract: P3055EL output switch transistor, The nominal oscillator ,peak and valley thresholds are 4.1 V'and 2,3 V , versus supply voltage. resets, terminating output transistor conduction for the `duration of the , ~titch transistor , The output transistor is designed to switch a maximum of from overstress. Each on , , output switch transistor current b~ldu~ during conduction, and ,{~i.,>:~.*,. \ q.> as in Figures 18 , proper heatsinking. The MCW166 is contained in a 5­lead T&220 type package, The tab of the package is
Motorola
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MC34166 MC33166 MC341 P3055E P3055EL MBR201OOCT 12Vt024V 314B motorola MC3 930b motorola transistor 070R0LA

LQ14X01

Abstract: DSA0078707 Transistor). It is composed of a color TFT-LCD panel, driver ICS, contiol circti~ power suppIy circuit , SaMetimeOrlater thanthatOfvDD. PowerSeauence ofinverter tl>o VDD(12V) I 1- ` VEE (5V) t220
Sharp
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LQ14X01 DSA0078707 C148 FX8-60P-SV bti ml-1 LD-8203 LD-8203-14

39SF512

Abstract: 39vf020 nonvolatile memories is a floating gate memory transistor. Details of the memory cell operation are included , ohms 200 V JEDEC JESD 78 100 mA Latch-up T22.0 706 TABLE 23: ESD & LATCH UP
Silicon Storage Technology
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39SF512 39vf020 39SF010 37vf040 39VF512 39VF010 ISO-9001 Q30008 SF1-45A 39SF020/39SF010/39SF512 S72023-00-000 SF3-33A

HA 12058

Abstract: HA12047 request only Video Camera Applications Audio Applications -o n special request only TRANSISTOR Power MOS , . HYBRID IC TRANSISTOR FET/POWER FET DIODE , Transistor Arrays FM IF (Hi-Fi) FM MPX (Hi-Fi) AM T uner (Hi-Fi) AM T uner (Car) FM/AM Tuner (Hi-Fi) FM MPX w , Package code DIP, SIP Material for details U.M Page - 0 H IT A C H I 21 TRANSISTOR F E T , -220AB RF-PAK T-3P T-3P DPAK DPAK-L T-220AB DPAK DPAK-L DPAK DPAK-L MPAK T-92 SPAK T-3 T-126 FPAK SPAK T-3 T-220
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HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HD25/HD HMCS40 HD61J/K/L/MM 27K/L/P/Q ECLHD10K/100K 2SK296

Motorola transistor 7144

Abstract: t187 otherwise noted. Symbol t210 t211 Min ­ 350 Max 300 900 Unit ns t220 t221 t222 t223 ­ ­ ­ , t211 1.5V CLSN 1.5V Figure 36. TPTX Full Duplex Timing TPFULDL 1.5V 1.5V t220 CLSN 1.5V
Motorola
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Motorola transistor 7144 t187 7144 transistor equivalent 4558 dd data DT 7130 IC transistor t222 MC68160 10BASE MC68360

D147D

Abstract: C520D 08 - 641 86 30 25% moms tillkommer på samtliga priser 2005-03-24 7 TRANSISTOR Beteckning , 25% moms tillkommer på samtliga priser 05-03-24 10 TRANSISTOR Beteckning. Pris vid köp av , samtliga priser 2005-03-24 11 TRANSISTOR Beteckning. Pris vid köp av *även YT-mont. 110BD233 , tillkommer på samtliga priser 05-03-24 12 TRANSISTOR Beteckning. Pris vid köp av *även YT-mont
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C520D D147D vqb 71 VQB71 d348d D347D LSV3539

PA0016

Abstract: STR11006 Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode Selector Guide Supplementary Literature , collector silicon produces a w ork­ horse transistor with 4-10 MHz f j . 40 150 V V( b r j c e O- and 70 , 4-746 4-746 4-746 4-746 4-746 â'™ C on su lt Factory 1-10 Power Transistor Selector Guide Â
Labb Elektronik
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PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 MK-149 MK-150 MK-151 MK-152 MK-153 MK-154

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt Speaker 0 SPKR drives the speaker transistor and is used for diagnostics. 27 ALE Address
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la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt 2sd323 diode LT 7229 YM 7137 3D DA 3807 pdf transistor AN-466 AN-568 AN-784A

d472 TRANSISTOR

Abstract: transistor d472 . 87 SPKR 0 Speaker SPKR drives the speaker transistor. 88 SAO I/O System Address 0
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WD76C10A WD76C10ALP WD76C10ALV 80386SX d472 TRANSISTOR transistor d472 IT191 t2146 wd90c90 WD76C1 CLK14

d472 TRANSISTOR

Abstract: d472 TRANSISTOR equivalent -bit slave. SPKR Speaker SPKR drives the speaker transistor. SAO I/O System Address 0 When not in
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d472 TRANSISTOR equivalent IMS T414 wd90c10 t410 TRANSISTOR K544 SPB105 WD7910IWD7910LP WD791 WD7910 O/WD791 WD7910/WD7910LP
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