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transistor substitution chart

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Abstract: same. A Review of Smith Chart Fundamentals Philip H. Smith introduced the Smith Chart in Electronics Magazine on January 1939, revolutionizing the RF industry [1, 2]. This chart simplified complex , solutions. The Smith Chart is a graphical reflection coefficient system with normalized conformal mapping , Chart. Figure 2 · The Admittance Smith Chart. the ratio of the root of the incident power wave , value as defined by the user. The Smith Chart's horizontal centerline is known as the resistive line. ... Original
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10 pages,
100.74 Kb

49 MHZ rc transmitter absolute encoders siemens bfs17p CR2032 LS3360 MA184 NM95HS01 PCB directional antena TRANSISTOR SUBSTITUTION transistor smd xc ANTENA I-ETS-300-220 RF pcb antenna 434 AN-1021 AN-1021 abstract
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Abstract: 1) Note 1: I-ETS 300 220 specification: substitution method, dipol reference, main directivity. , the DC current gain hfe. Unfortunately, this is a transistor parameter which can vary by quite some degree so in most practical cases RB has to be adapted to the hfe of the transistor used. With a , variations in transistor parameters, battery voltage VCC, and tempera- 3 www.fairchildsemi.com , design of this network for a particular transistor results in a good stabilization of the quiescent ... OCR Scan
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10 pages,
359.45 Kb

I-ETS-300-220 saw resonator r2632 AN-1021 AN-1021 abstract
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Abstract: specification: substitution method, dipol reference, main directivity. Systems for the specified use are high , transistor parameter which can vary by quite some degree so in most practical cases RBhas to be adapted to the hfe of the transistor used. If this "tuning" shall be avoided a much more complicated bias network , constant over varia tions in transistor parameters, battery voltage Vcc, and tempera , this network for a particular transistor results in a good stabilization of the quiescent point (lc ... Original
datasheet

10 pages,
170.31 Kb

transistor SMD 431 TRANSISTOR SUBSTITUTION smd b38 antenna matching calculation alps encoder pd A65 SMD I-ETS-300-220 wl smd transistor smd diode 82x RC oscillator design saw Colpitts circuit design RF pcb antenna 434 R2632 resonator datasheet abstract
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Abstract: specification substitution method dipol reference main directivity C1996 C1996 National Semiconductor Corporation , transistor parameters battery voltage VCC and temperature A resistor bias network can be used with good , transistor parameter which can vary by quite some degree so in most practical cases RB has to be adapted to the hfe of the transistor used If this ``tuning'' shall be avoided a much more complicated bias , design of this network for a particular transistor results in a good stabilization of the quiescent ... Original
datasheet

10 pages,
104.12 Kb

1997 PCB antenna 49 MHZ rc transmitter HiSeC R2632 resonator saw Colpitts circuit design TRANSISTOR SUBSTITUTION transistor smd xc transistor substitution chart RF pcb antenna 434 433.92 Mhz two-port saw resonator saw resonator r2632 S M R2632 datasheet abstract
datasheet frame
Abstract: 1: I-ETS 300 220 specification: substitution method, dipol reference, main directivity. , directly proportional to the DC current gain hfe. Unfortunately, this is a transistor parameter which can , transistor used. If this "tuning" shall be avoided a much more complicated bias network has to be used. The , transistor parameters, battery voltage VCC, and 3 PrintDate=1997/08/08 PrintTime=17:57:22 6159 an012566 , Bias Stabilization A careful design of this network for a particular transistor results in a good ... Original
datasheet

4 pages,
768.19 Kb

pogo pins datasheet pogo pin schematic proximity sensor 1015 TRANSISTOR DATASHEET VOLTAGE DEPENDENT RESISTOR QT9701B2 circuits metal detector transistor substitution chart Proximity Detectors for metal detector digital metal detector raw material control log sheet metal detectors IC datasheet abstract
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Abstract: QTWinViewTM Signal & Chart Displays The serial mode can be configured to either a 'polled mode' or a , substitution. For example, the unit can be made much more sensitive by simply replacing the socketed , Supply Voltage -0.5 15 VDC Output transistor voltage -0.5 11 VDC Note 1 100 |mA| 5 VDC 50 |mA| 5.0 VDC 10 |mA| max units Output transistor , 200 counts Note 6 0.2 100 seconds Note 6 Output transistor on-resistance @ 10 mA 20 ... Original
datasheet

15 pages,
389.96 Kb

TYP13 R5523 R5523N001B R5523N EA-168-120921 R5523N abstract
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Abstract: condition below: (Power Dissipation (SOT-23-5) is substitution of SOT-23-6.) Measurement Conditions Standard , transistor. (Refer to the block diagram.) Because of this, in both cases of enable and disable, if the voltage , the temperature of the IC is beyond 135°C, the switch transistor turns off and the FLG pin level , transistor turns on and FLG becomes "H". Unless the abnormal situation of VOUT pin is removed, the switch transistor repeats on and off. Refer to the 24) Thermal Shutdown operation in the typical characteristics. · ... Original
datasheet

16 pages,
814.24 Kb

R5523N EA-168-071107 R5523N abstract
datasheet frame
Abstract: drain of the switch transistor. (Refer to the block diagram.) Because of this, in both cases of enable , increase drastically. If the temperature of the IC is beyond 135°C, the switch transistor turns off and the , , the switch transistor turns on and FLG becomes "H". Unless the abnormal situation of VOUT pin is removed, the switch transistor repeats on and off. Refer to the 24) Thermal Shutdown operation in the , characteristics. While the switch transistor is on, if VOUT pin is short or large capacity is loaded, until the ... Original
datasheet

15 pages,
333.32 Kb

transistor substitution chart R5523N EA-168-080912 R5523N abstract
datasheet frame
Abstract: transistor. (Refer to the block diagram.) Because of this, in both cases of enable and disable, if the , If the temperature of the IC is beyond 135°C, the switch transistor turns off and the FLG pin level , transistor turns on and FLG becomes "H". Unless the abnormal situation of VOUT pin is removed, the switch transistor repeats on and off. Refer to the 24) Thermal Shutdown operation in the typical characteristics. , While the switch transistor is on, if VOUT pin is short or large capacity is loaded, until the current ... OCR Scan
datasheet

23 pages,
1173.11 Kb

SYPM regulator 78G cs 550-is datasheet abstract
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Abstract: reference source is a constant voltage, the control device is a pass transistor, and the protection is prim , the pass transistor Darlington pair Q14-Q15 Q14-Q15. The ultimate current capability of this pair is very , brought out separately, allowing an ex tended range of pass transistor connections to be utilized. These , 4-6) PASS TRANSISTOR CIRCUITS The next major subject concerns the use of external pass transistor , configuration is extended to a triplet by the external npn transistor. For further extension, this external ... Original
datasheet

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SW-SPDT K3296 ERE-G180 15 watt power amplifier " 15 GHz" JQC-3F AM Broadcast antenna STR-A6259H microwave modulator 15 GHz burndy Y35 crimping tool manual CX24500 ADG918 equivalent Penetrox A Electric Joint Compound zilog z80 datasheet abstract
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Bipolar Transistor Comparison Hall-Effect Sensor Publications Selection Guide Clarifying the 2953/2954 Replacement/Substitution (AN29502 AN29502 AN29502 AN29502.6) (PDF) Compumotor Engineering Assurance Flow Chart (OA-003 OA-003 OA-003 OA-003) (PDF) Reliability - Background Information (PDF
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Allegro 02/10/2001 14.09 Kb HTM techpub2.htm
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