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2N3019S Microsemi Corporation Transistor visit Digikey
2N2906AUB Microsemi Corporation Transistor visit Digikey
2N2221AUB Microsemi Corporation Transistor visit Digikey
2N3499L Microsemi Corporation Transistor visit Digikey
2N2222AUA Microsemi Corporation Transistor visit Digikey
SRF4427G Microsemi Corporation Transistor visit Digikey

transistor substitution chart

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Abstract: application. · There is a parasitic diode between source and drain of the switch transistor. (Refer to the , IC is beyond 135°C, the switch transistor turns off and the FLG pin level becomes "L". Then, when the temperature of the IC decreases equal or lower than 120°C, the switch transistor turns on and FLG becomes "H". Unless the abnormal situation of VOUT pin is removed, the switch transistor repeats on and , the 23) current limit transient response of typical characteristics. While the switch transistor is Ricoh
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R5523N EA-168-080912 EIAJ-RRM-08B PE-SOT-23-5-071228
Abstract: broadband will generally remain the same. A Review of Smith Chart Fundamentals Philip H. Smith introduced the Smith Chart in Electronics Magazine on January 1939, revolutionizing the RF industry [1, 2]. This chart simplified complex parallel to series conversions graphically and, for the first time, provided intuitive transmission line solutions. The Smith Chart is a graphical reflection coefficient , The Impedance Smith Chart. Figure 2 · The Admittance Smith Chart. the ratio of the root of the RF Micro Devices
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AN-721 broadband impedance transformation MOTOROLA small signal transistors smith
Abstract: . QTWinViewTM Signal & Chart Displays The serial mode can be configured to either a 'polled mode' or a , substitution. For example, the unit can be made much more sensitive by simply replacing the socketed , Supply Voltage -0.5 15 VDC Output transistor voltage -0.5 11 VDC Note 1 100 |mA| 5 VDC 50 |mA| 5.0 VDC 10 |mA| max units Output transistor , 200 counts Note 6 0.2 100 seconds Note 6 Output transistor on-resistance @ 10 mA 20 -
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TRANSISTOR SUBSTITUTION DATA BOOK transistor manual substitution METAL DETECTOR circuit for make metal detector sensor metal detector metal detector schematic
Abstract: specification substitution method dipol reference main directivity C1996 National Semiconductor Corporation , transistor parameters battery voltage VCC and temperature A resistor bias network can be used with good , transistor parameter which can vary by quite some degree so in most practical cases RB has to be adapted to the hfe of the transistor used If this ``tuning'' shall be avoided a much more complicated bias , design of this network for a particular transistor results in a good stabilization of the quiescent National Semiconductor
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transistor WL 431 S M R2632 SMD IC TL 431 saw resonator r2632 R2632 CR2031 AN-1021
Abstract: 1: I-ETS 300 220 specification: substitution method, dipol reference, main directivity. AN012566 , directly proportional to the DC current gain hfe. Unfortunately, this is a transistor parameter which can , transistor used. If this "tuning" shall be avoided a much more complicated bias network has to be used. The , transistor parameters, battery voltage VCC, and 3 PrintDate=1997/08/08 PrintTime=17:57:22 6159 an012566 , Bias Stabilization A careful design of this network for a particular transistor results in a good Fairchild Semiconductor
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I-ETS-300-220 R2632 resonator HiSeC saw Colpitts circuit design RF pcb antenna 434 433.92 Mhz two-port saw resonator AN012566-1
Abstract: 1) Note 1: I-ETS 300 220 specification: substitution method, dipol reference, main directivity , the DC current gain hfe. Unfortunately, this is a transistor parameter which can vary by quite some degree so in most practical cases RB has to be adapted to the hfe of the transistor used. With a , transistor parameters, battery voltage VCC, and tempera- 3 www.fairchildsemi.com AN-1021 The , particular transistor results in a good stabilization of the quiescent point (IC) over variations in Fairchild Semiconductor
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95hs01 siemens R2632 RP1303 ANTENA r2632 s m fairchild an-1021
Abstract: specification: substitution method, dipol reference, main directivity. Systems for the specified use are high , transistor parameter which can vary by quite some degree so in most practical cases RBhas to be adapted to the hfe of the transistor used. If this "tuning" shall be avoided a much more complicated bias network , constant over varia tions in transistor parameters, battery voltage Vcc, and tempera , this network for a particular transistor results in a good stabilization of the quiescent point (lc -
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434M size 0805 resistors I-ETS300220
Abstract: EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U , N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching , chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and , manufacturer's letter identification should be specified. 6.3 Substitution information. Devices covered by , IRFN350 IRFN450 6.3.1 Substitution of DESC drawing. This specification supersedes DESC drawing 89026 -
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2N7228U 2n7226 JANHCA2N7225 c 1384 2N7725 2N772 MIL-PRF-19500/592C MIL-S-19500/592B MIL-PRF-19500 2N7226
Abstract: drain of the switch transistor. (Refer to the block diagram.) Because of this, in both cases of enable , increase drastically. If the temperature of the IC is beyond 135°C, the switch transistor turns off and the , °C, the switch transistor turns on and FLG becomes "H". Unless the abnormal situation of VOUT pin is removed, the switch transistor repeats on and off. Refer to the 24) Thermal Shutdown operation in the , characteristics. While the switch transistor is on, if VOUT pin is short or large capacity is loaded, until the Ricoh
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PE-SOT-23-5-0610 EA-168-071107
Abstract: CRF24010 10 W, SiC RF Power MESFET Cree's CRF24010 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to , Frequency (GHz) Note: The chart on this page displays the performance achievable with the CRF24010 product , Note: Some values may differ due to substitution in the event of temporarily unavailable parts. Note: Some values may differ due to substitution in the event of temporarily unavailable parts Cree
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CRF24010F 0592 CRF24010P atc 17-33 substrate 106-682 2244 CRF240 F24010F CRF24010-TB
Abstract: and drain of the switch transistor. (Refer to the block diagram.) Because of this, in both cases of , IC would increase drastically. If the temperature of the IC is beyond 135°C, the switch transistor , lower than 120°C, the switch transistor turns on and FLG becomes "H". Unless the abnormal situation of VOUT pin is removed, the switch transistor repeats on and off. Refer to the 24) Thermal Shutdown , response of typical characteristics. While the switch transistor is on, if VOUT pin is short or large Ricoh
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EC-168-131225 10F-1
Abstract: is based on the measurement at the condition below: (Power Dissipation (SOT-23-5) is substitution of , transistor. (Refer to the block diagram.) Because of this, in both cases of enable and disable, if the , drastically. If the temperature of the IC is beyond 135°C, the switch transistor turns off and the FLG pin , switch transistor turns on and FLG becomes "H". Unless the abnormal situation of VOUT pin is removed, the switch transistor repeats on and off. Refer to the 24) Thermal Shutdown operation in the typical Ricoh
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EA-168-120921
Abstract: ETQP1F0R8LB C5 1uF 10V ISENSE1 SUBSTITUTION TABLE V OUT VIN REF 3.3V 2.5V 2V R24 N/A 10k , SERIES 3. TRACE RESISTORS R11, R13 = 0.1" WIDE x 0.675" LONG 4. SEE SUBSTITUTION TABLE R1 51 C1 , (201) 348-7522 Q1 1 MMBT3906LT1 General Purpose Transistor Motorola (602) 244-3576 , , 2.5V is the highest output voltage obtainable with a 3.3V input. The substitution table on the bottom , Hole Chart SYMBOL DIAMETER NUMBER OF HOLES TOLERANCE PLATED A 0.187 4 + 0.003 Linear Technology
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PIN CONFIGURATION IC CD4047 IC CD4047 CD4047 equivalent ic CD4047 equivalent cd4047 ic pin of ic cd4047 DC201 LTC1430 1430CS8 SR1020
Abstract: the condition below: (Power Dissipation (SOT-23-5) is substitution of SOT-23-6.) Measurement , switch transistor. (Refer to the block diagram.) Because of this, in both cases of enable and disable, if , drastically. If the temperature of the IC is beyond 135°C, the switch transistor turns off and the FLG pin , transistor turns on and FLG becomes "H". Unless the abnormal situation of VOUT pin is removed, the switch transistor repeats on and off. Refer to the 24) Thermal Shutdown operation in the typical characteristics. · Ricoh
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R5523N001B r5523n00 R5523N001-TR-FE R5523 TYP13
Abstract: transistor adoption (Upper and lower total Vo(sat)=0.5V(typical) at Io=400mA) For one power supply (The , significantly. Timing Chart - Full-Step (2phase excitation) drive- 8/12 LB1909MC Operation principal , Substitution Allowed Lead Free IC1 1 Motor Driver VCC Bypass capacitor Switch Test points 10uF 50V SANYO Electric
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vacuum cleaner circuit diagram 50ME10HC toy motor Control IC SANYO PACKAGE DESIGNATOR 4-Phase Stepping Motor Driver step motor driver 10A LV8549M SOIC-10 SOIC10
Abstract: reserved. PRELIMINARY 6.1 Main Software Flow Chart . 34 6.2 Data Flow , , some dead time must be inserted between turning off one transistor of the half-bridge, and turning on , voltage-controlled transistor. It is designed for high-frequency operation and has a low voltage drop; thus, it has , high-power applications. An Insulated-Gate Bipolar Transistor (IGBT) is a bipolar transistor controlled by a , high switching frequencies. The disadvantage is the higher voltage drop of a bipolar transistor, which Freescale Semiconductor
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Pmsm matlab a-b-c to d-q transformation pmsm matlab source code Field-Weakening Controller pure sinus inverter circuit diagram park and clark transformation 56F80 56F8100 56F8300 AN1931 56F805 56F8346
Abstract: produit. â'¢ Substitution of any component may impair suitability for Class I, Division 2. â , nonhazardous. La substitution de tout composant peut rendre cet équipement inadapté à une utilisation , diode reverse-wired across the load for transistor outputs switching 24V DC inductive loads. For , for transistor outputs, 24V DC operation. WARNING If you connect or disconnect wiring while the , -OW16 Relay Output Module Derating Chart for each output of the 1762-OW16 Relay Output Module POINTS 16 Allen-Bradley
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RA-DU002 1762-IN009C-EN-P 1762-IN009B-EN-P
Abstract: voltage (upper transistor + lower transistor residual voltage; 0.40V typ at 400mA) â'¢ Parallel connection (Upper transistor + lower transistor residual voltage; 0.5V typ at 800mA) â'¢ Separate logic , . Input timing chart TstepH/TstepL : Clock H/L pulse width (min 500ns) Tds : Data set-up time (min 500ns , Operating mode Output ON Output OFF Figure 12. Output enable function timing chart 10/34 LV8729V , operation Reset state Figure 13. Reset function timing chart (9) Forward / reverse switching function ON Semiconductor
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Abstract: Software Design . 30 6.1 Main Software Flow Chart . 30 6.2 Data Flow , , some deadtime must be inserted between the turn off of one transistor of the half-bridge, and the turn , IGBTs. A Power MOSFET is a voltage-controlled transistor. It is designed for high-frequency operation , sensitivity limits the MOSFET application in high-power applications. An insulated-gate bipolar transistor (IGBT) is a bipolar transistor controlled by a MOSFET on its base. The IGBT requires low drive current Motorola
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DSP56F801 synchronous motor equations sine wave inverter 220v PI CONTROLLER tuning 3-phase induction motors test results SPACE VECTOR MODULATION theory AC 220v Motor Speed Controller AN1931/D DSP56F80 P56F800FM/D DSP56F801-7UM/D 56800/56800E
Abstract: LV8711T (5) Constant-current control time chart (chopping operate) In each current mode, the operation , the above operation. 14 / 28 LV8711T (6)Output transistor operation mode 1) Charge 2) Slow , saturation voltage of transistor ( Tr_U : 400mV, TR_D : 150mV typical at 500mA ) VF : The forward voltage of , chart of Full-step excitation (CW mode) Figure 21. Timing chart of Half-step excitation (CW mode) 17 / 28 LV8711T 7-2) DCM Drive mode Figure 22. Timing chart of DCM mode 2 H-bridges parallel SANYO Electric
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LV8711 TSSOP24
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