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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor marking code 12W

Catalog Datasheet MFG & Type PDF Document Tags

transistor marking code 12W

Abstract: marking code 12W transistor 15.31 0.563 0.603 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl , 1.800 0.060 0.071 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl , transistor, this current will track output current with a ratio of about 1:100 Note4: If the same voltage , the collector of the power transistor. The output load current is supplied 5 Power through , current to the NPN output transistor. This allows the NPN output transistor to be driven into saturation
Taiwan Semiconductor
Original

3A LDO step down regulator

Abstract: transistor marking code 12W 15.31 0.563 0.603 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl , 1.800 0.060 0.071 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl , transistor, this current will track output current with a ratio of about 1:100 Note4: If the same voltage , the collector of the power transistor. The output load current is supplied 5 Power through , current to the NPN output transistor. This allows the NPN output transistor to be driven into saturation
Taiwan Semiconductor
Original

transistor marking code 12W

Abstract: transistor marking code 12W 80 8.280 8.800 0.326 0.346 6.010 6.510 0.237 0.256 14.29 15.31 0.563 0.603 Marking Diagram = Year Code , 0.324 0.326 1.540 1.800 0.060 0.071 Marking Diagram = Year Code = Month Code (A=Jan, B =Feb, C=Mar , transistor, this current will track output current with a ratio of about 1:100 Note4: If the same voltage is , output voltage. This pin is the collector of the power transistor. The output load current is supplied , supplies the drive current to the NPN output transistor. This allows the NPN output transistor to be driven
Taiwan Semiconductor
Original

marking code 12W transistor

Abstract: transistor marking code 12W -251 Dimension A B Marking : C HSMC Logo D Product Series Part Number Date Code Rank , HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9008-A Issued Date : 1998.04.10 Revised Date : 2000.11.01 Page No. : 1/2 HI6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI6718 , : 1.2W · High current: 1A Absolute Maximum Ratings (Ta=25°C) · Maximum Temperatures Storage , -Lead TO-251 Plastic Package HSMC Package Code : I *:Typical Inches Min. Max. 0.0177 0.0217
Hi-Sincerity Microelectronics
Original
marking code 12W transistor transistor marking code 12W HI671 UL94V-0

transistor marking code 12W 80

Abstract: transistor marking code 12W -252 Dimension Marking : C A HSMC Logo Part Number Date Code D B Rank Ink Mark G F , HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2 HJ6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ6718 , : 1.2W · High current: 1A Absolute Maximum Ratings (Ta=25°C) · Maximum Temperatures Storage , -Lead TO-252 Plastic Surface Mount Package HSMC Package Code : J *:Typical Inches Min. Max. 0.0177
Hi-Sincerity Microelectronics
Original
transistor marking code 12W 80 IC350

12v in 5v out regulator

Abstract: transistor marking code 12W 0.060 0.071 Marking Diagram / TS1582 YML CM5 Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar , is the drive current required for the output transistor, this current will track output current with , pin is the collector of the power transistor. The output load current is supplied through this pin , output transistor. This allows the NPN output transistor to be driven into saturation. For the control , gradients between the power transistor and the control circuitry there is a significant difference in
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OCR Scan
TS1532 TS1582CM5 12v in 5v out regulator TS15

transistor marking code 12W 12

Abstract: mosfet marking 12W LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO , 500V 1.0K 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code , ) transistor utilizing Supertex's lateral DMOS technology. The gate is ESD protected. Free from secondary , -243AA 30mA 1.2W 15 IDR IDRM* 170 30mA 30mA 30mA 30mA 78 * ID (continuous , (milliamps) 150 1 10 100 TO-243AA 0.6 1000 VDS (volts) TA = 25°C PD = 1.2W 0.4
Supertex
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transistor marking code 12W 12 mosfet marking 12W LN1E MOSFET IGSS 100nA VDS 20V iGSS 100nA Vgs 0v marking code ln1e

TS15

Abstract: TS1581 0.060 0.071 Marking Diagram TS 1581 YML CM5 Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar , for the output transistor, this current will track output current with a ratio of about 1:100 Note4 , transistor. The output load current is supplied through this pin. The voltage at this pin must be 0.7V , control circuitry and supplies the drive current to the NPN output transistor. This allows the NPN output transistor to be driven into saturation. For the control voltage the current requirement is small equal to
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OCR Scan
TS1581 TS1581CM5 TS1531

TS15

Abstract: TS1583 0326 0.060 0.071 Marking Diagram TS1583 YML CMS Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar , required for the output transistor, this current will track, output current with a ratio of about 1:100 , power transistor. The output load current is supplied through this pin. The voltage at this pin must be , power for the control circuitry and supplies the drive current to the NPN output transistor. This allows the NPN output transistor to be driven into saturation. For the control voltage the current
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OCR Scan
TS1583CM5
Abstract: 0.180 0.050 0.110 0.013 0.326 0.071 Marking Diagram Y = Y e ar Code = Month Code (A =Jan, B =F eb, C , required fo r the o utp ut transistor, this current will track outp ut current w ith a ratio o f about 1 , er transistor. The output load cu rren t is supplied 5 Pow or through this pin. The voltage , drive current to the NPN output transistor. This allo w s th e NPN o utp ut tran sistor to be driven , dissipated by th e device is dissipated in th e pow er transistor. The tem perature rise in th e pow er tran -
OCR Scan
1583C

mosfet marking 12W

Abstract: transistor marking code 12W transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.30A ­ 1.2W + , Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H46S RoHS , after the Lot Marking. · This product include the lead in the Glass of electronic parts and the lead , flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips , be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond
Mitsubishi
Original
RA07H0608M 30mW transistor RA07H0608M-101 68-88MH 88-MH

transistor marking code H11S

Abstract: H11S RF Ground (Case) PACKAGE CODE: H11S RoHS COMPLIANCE · RA06H8285M-101 is a RoHS compliant products. · RoHS compliance is indicate by the letter "G" after the Lot Marking. · This product include , mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded , coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=6W, VDD=12.5V and Pin=1mW each stage transistor operating conditions are: IDD @ T=35% VDD
Mitsubishi
Original
RA06H8285M transistor marking code H11S H11S 820-851MH 851-MH
Abstract: Second Lines: Logo and Marking ID Third Line: Date Code Y: Year WW: Work Week of Molding A: Assembly House Code th th XX: 7 and 8 Digits of Batch No. First Line: Logo and Marking ID Second Line , regulation controller and M Package (SO7) a high voltage transistor, and is specially designed for off-line power supplies within 12W output power or non-isolated buck applications within 5W. Typical , NPN Transistor with 700VCBO â'¢ Low Start-up Current: 0.2µA (Typ) â'¢ Internal Output Diodes
Original
AP3965/66/71 AP3965 AP3966/71 DS36531

ap3970

Abstract: AP3970P7-G1 and a high voltage transistor, and is specially designed for off-line power supplies within 12W , Information First and Second Lines: Logo and Marking ID Third Line: Date Code Y: Year WW: Work Week of Molding A: Assembly House Code th th XX: 7 and 8 Digits of Batch No. First Line: Logo and Marking , Built-in NPN Transistor with 700VCBO Low Start-up Current: 0.2A (Typ.) Internal Output Cable Voltage , Solution Output Power Range (Note 1): AP3968 for 5W Adapter AP3969 for 7.5W Adapter AP3970 for 12W
Diodes
Original
AP3970P7-G1 ap3968m AP3970P7 AP3970P-G1 AP3968/69/70 DS36759

zener n20

Abstract: diode zener ZD 260 market standards, these sensors conform to the CE marking EMC Directive and are currently undergoing UL , transistor 20 380 PNP open-collector transistor NA2-N24 NPN open-collector transistor 24 460 NA2-N24-PN 20mm NPN open-collector transistor PNP open-collector transistor NA2-N20 Beam pitch NPN open-collector transistor PNP open-collector transistor NA2-N16-PN NA2-N20-PN NPN open-collector transistor PNP open-collector transistor NA2-N12-PN Sensing height Output PNP
SUNX
Original
zener n20 diode zener ZD 260 NA2-N12P fluorescent lamp starter 1W 12V ZENER DIODE Sunx

07n60c2

Abstract: TRANSISTOR SMD MARKING CODE 12w capacitances · Improved noise immunity P-TO251 Type Package Ordering Code Marking , SPD07N60C2 SPU07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , Turn-on delay time t d(on) VDD=380V, VGS=0/13V, - 11 - Rise time tr ID=7.3A, R G=12W , load, T j=125°C t = f (RG ), inductive load, Tj=125°C par.: V DS=380V, V GS=0/+13V, RG=12W par , load, Tj =125°C par.: V DS=380V, V GS=0/+13V, RG=12W par.: VDS =380V, VGS =0/+13V,ID=7.3A 0.40
Infineon Technologies
Original
P-TO252 Q67040-S4311 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w Q67040-S4312 07N60C2

DIODES incorporated

Abstract: transistor marking code 12W 12 details, go to our website at http://www.diodes.com. Marking Information ZTX855 = Product type Marking Code ZTX855 Document Number DS33136 Rev. 3 - 2 1 of 6 www.diodes.com August 2012 , A Product Line of Diodes Incorporated ZTX855 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR , Saturation Voltage PD = 1.2W Lead-Free Finish; RoHS compliant (Note 1 & 2) Halogen and Antimony Free. "Green" , Pin-Out Ordering Information (Note 4) Product ZTX855STZ ZTX855 Notes: Marking ZTX855 ZTX855
Diodes
Original
DIODES incorporated AEC-Q101 J-STD-020 2002/95/EC 2011/65/EU

TRANSISTOR SMD MARKING CODE 12w

Abstract: smd transistor marking 12W immunity P-TO263-3-2 Type Package Ordering Code Marking SPP07N60C2 P-TO220 , SPP07N60C2 SPB07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , Turn-on delay time t d(on) VDD=380V, VGS=0/13V, - 11 - Rise time tr ID=7.3A, R G=12W , load, T j=125°C t = f (RG ), inductive load, Tj=125°C par.: V DS=380V, V GS=0/+13V, RG=12W par , load, Tj =125°C par.: V DS=380V, V GS=0/+13V, RG=12W par.: VDS =380V, VGS =0/+13V,ID=7.3A 0.40
Infineon Technologies
Original
Q67040-S4310 smd transistor 12w 12W SMD MARKING CODE smd transistor 12W 55 12W smd transistor SMD 12w transistor SMD MARKING CODE 12w P-TO220-3-1 Q67040-S4309
Abstract: SDM4101 Package Marking SDM4101 YYWW Date Code Pin 1 DISCLAIMER Solid State Optronics (SSO , drives one low on-resistance, rugged source-to-source enhancement type DMOS transistor. The SDM4101 has , .1.2W Solder Temperature ­ Wave (10sec).260°C Solder Temperature ­ IR Reflow , Description 4 pin SIP, (25/Tube) NOTE: Suffixes listed above are not included in marking on device for part Solid State Optronics
Original
E201932

H-970

Abstract: Code : P designed for AC/DC adapter, providing as high as 12W continuous power Fig.1 output in , power dissipation. At the off-state of power transistor, the reverse bias of Emit of power transistor , the safety area of power transistor. Besides, it also includes over load protection, anti-saturation , Built-in 700 V High Voltage Power Transistor and Few Peripheral Components Latching PWM for , Switch Power Transistor Makes the Power Dissipation of the Start-up Resistance be Reduced More Than 10
Hi-Sincerity Microelectronics
Original
H-970 IC200908
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