NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Characteristics Equivalent Circuit Marking Collector Gate 20J321 Emitter Part No. (or , GT20J321 GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 GT20J321 High Power Switching Applications Fast Switching Applications · Fourth-generation IGBT · Unit: mm Enhancement mode type · Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 us (typ.) : Eon = 0.40 mJ (typ.) Low switching loss : Eoff = 0.43 mJ (typ.) · ... | Original |
7 pages, |
2-10R1C TOSHIBA IGBT DATA BOOK 20j32 GT20J321 20J321 transistor equivalent 20j321 GT20J321 abstract |
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| Abstract: GT20J321 GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 GT20J321 High Power Switching Applications Fast Switching Applications · · · · · Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference , ) 2.78 °C/W Thermal resistance (diode) Rth (j-c) 4.23 °C/W Equivalent Circuit Marking Collector Gate 20J321 Emitter Part No. (or abbreviation code) Lot No. A line ... | Original |
7 pages, |
2-10R1C GT20J321 transistor equivalent 20j321 20J321 GT20J321 abstract |
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