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transistor c2383

Catalog Datasheet MFG & Type PDF Document Tags

transistor c2383

Abstract: C2383 C2383 C2383 Silicon NPN Epitaxial Transistor Description :The C2383 is designed for color TV class B sound output applications Features: High voltage: VCEO=160V Complementary to A1013 Chip Appearance Chip Size 1100um×1100um Chip Thickness 210±20um Bonding Pad Size Base 240um×240um Emitter 330um×260um Front Metal Al Backside Metal AuAs Scribe line width 60um Wafer Size 6 inch Electrical Characteristics( Ta=25) Characteristic Symbol Test Condition
BCD Semiconductor
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transistor c2383 c2383 transistor transistor c2383 0 transistor A1013 A1013 transistor C2383 NPN Transistor

transistor c2383

Abstract: C2383 CYStech Electronics Corp. Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.03.17 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2383A3 Features · High breakdown voltage, BVCEO 200V · Large continuous collector current capability · Low collector saturation , BTC2383A3 Package TO-92 (Pb-free) Shipping Marking 2000 pcs / Tape & Box C2383 CYStek , Electronics Corp. TO-92 Dimension 2 A Marking: HFE Rank Product Name B 1 2 3 C2383
CYStech Electronics
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NPN transistor ECB TO-92 500ma 1A transistor c316 C2383 y C2383 d C316 NPN transistor ECB TO-92 BTA1013A3 UL94V-0

A1013 transistor

Abstract: transistor A1013 A1013 A1013 Silicon PNP Epitaxial Transistor Description :The A1013 is designed for color TV class B sound output applications Features: High voltage: VCEO=160V Complementary to C2383 Chip Appearance Chip Size 1100um×1100um Chip Thickness 210±20um Bonding Pad Size Base 240um×240um Emitter 330um×260um Front Metal Al Backside Metal Au Scribe line width 60um Wafer Size 6 inch Electrical Characteristics( Ta=25) Characteristic Symbol Test Condition
Shanghai Sunrise Electronics
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a1013 pnp transistor A1013 equivalent A1013 pnp a1013 transistor datasheet c2383 equivalent a1013 transistor data

transistor c2383

Abstract: c2383 transistor an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features_-.- - =.* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic`MetalKeramic Package .820 C23.83 , . Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor
M/A-COM
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PH1214-30EL

transistor c2383

Abstract: BR C2383 : Molded Plastic. Classification Rating 94V-0 Marking: C2383 UL Flammability NPN Silicon Plastic-Encapsulate Transistor TO-92MOD Electrical Characteristics @ 25OC Unless Otherwise Specified Parameter , Vdc 20 MHz CLASSIFICATION OF HFE (1) R 60-120 1.E 2.C 3.B DIMENSIONS Transistor
Micro Commercial Components
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2SC2383 BR C2383 2SC2383 NPN Transistor transistor 2sc2383 2SC2383 equivalent 2sc2383 TRANSISTOR 2SC2383-R 2SC2383-O 2SC2383-Y

transistor c2383

Abstract: C2383 Material: Molded Plastic. Classification Rating 94V-0 Marking: C2383 Symbol Parameter UL Flammability NPN Silicon Plastic-Encapsulate Transistor TO-92MOD E Electrical Characteristics @ 25OC Unless , =50mAdc) Base-Emitter Voltage (IC=5.0mAdc, V CE=5.0Vdc) Transistor Frequency (IC=200mAdc, V CE
Micro Commercial Components
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transistor c2383 y

transistor c2383

Abstract: C2383 MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2383-R 2SC2383-O 2SC2383-Y NPN Silicon Plastic-Encapsulate Transistor TO-92MOD E Features · · · · · · Capable of 0.9Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 160V Operating and storage junction temperature range: -55OC to +150 OC Marking: C2383 Case , Voltage (IC=500mAdc, IB =50mAdc) Base-Emitter Voltage (IC=5.0mAdc, V CE=5.0Vdc) Transistor Frequency (IC
Micro Commercial Components
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2SC2383Y C2383 -Y BR C2383 y

transistor c2383

Abstract: c2383 MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2383-R 2SC2383-O 2SC2383-Y NPN Silicon Plastic-Encapsulate Transistor TO-92MOD A L B G M H K Features · · · · · · · · Capable of 0.9Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 160V Operating and storage junction temperature range: -55OC to +150 OC Marking: C2383 , =500mAdc, IB =50mAdc) Base-Emitter Voltage (IC=5.0mAdc, V CE=5.0Vdc) Transistor Frequency (IC=200mAdc, V CE
Micro Commercial Components
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Abstract: 160V Operating and storage junction temperature range: -55OC to +150 OC Marking: C2383 Epoxy meets , Transistor Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max , AMMO PACK Vdc SMALL-SIGNAL CHARACTERISTICS fT DIMENSIONS Transistor Frequency (IC -
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transistor c2383

Abstract: C2383 2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications Unit: mm · High breakdown voltage: VCEO = 160 V · Large continuous collector current capability · Recommended for vertical deflection output & sound output applications for line-operated TVs. · Complementary to , C2383 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates
Toshiba
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2SA1013 Toshiba transistor c2383

Toshiba transistor c2383

Abstract: transistor c2383 2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications Unit: mm · · · · High breakdown voltage: VCEO = 160 V Large continuous collector current capability Recommended for vertical deflection output & sound output applications for line-operated TVs. Complementary to 2SA1013 Absolute , classification R: 60 to 120, O: 100 to 200, Y: 160 to 320 Marking C2383 Part No. (or abbreviation
Toshiba
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Toshiba transistor c2383

Abstract: transistor c2383 2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications · High breakdown voltage: VCEO = 160 V · Large continuous collector current capability · Recommended for vertical deflection output & sound output applications for line-operated TVs. · Unit: mm , , IC = 5 mA Note: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320 Marking C2383
Toshiba
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transistor c2383

Abstract: Toshiba transistor c2383 2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications · High breakdown voltage: VCEO = 160 V · Large continuous collector current capability · Recommended for vertical deflection output & sound output applications for line-operated TVs. · Unit: mm , Note 2: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320 Marking C2383 Part No
Toshiba
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