NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PTC 6072 and PTC 6073 Powerlithic series of silicon Power Darlington modules are designed for high , collector and emitter of the darlington output transistor. This 40 Ampere fast switching diode can be used , /6073 Fast-Switching, High Voltage Power Darlington Power Diode Module Absolute maximum ratings Description 6072 6073 Unit Conditions VCBO Collector-Base Voltage 500 600 Volts VCEO Collector-Emitter , Current Continuous 5 A IB Base Current Peak 10 A Pq Maximum Power Dissipation 125 W TC = 25 "C Tj ... | OCR Scan |
2 pages, |
Darlington NPN Silicon Diode Darlington 40A 6073 "Power Diode" PTC6073 transistor c 6073 datasheet abstract |
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| Abstract: 9000/02 ' PTC 6022 PTC 6023 30 350 400 2.0 50-750 0.4 6.5 1.0 125 C PTC 6022/6023 PTC 6072 PTC 6073 , .310 Z 7.62 .300 0W %-24 UNF-2A Plastic Transistor TO-247 a2 Ç DIM MILLIMETERS INCHES , 6251 PTC 6252 PTC 6253 10 350 400 450 2.0 10-120 0.4 2.5 1.0 150 C Consult Factory PTC 6000 PTC 6001 15 300 350 2.0 40-160 0.4 2.5 1.0 125 C PTC 6000/03 PTC 6002 PTC 6003 15 400 500 2.0 40-160 0.4 2.5 1.0 125 C PTC 6000/03 PTC 10000 PTC 10001 20 350 400 1.9 50-600 0.6 3.5 2.4 175 A PTC 10000/01 PTC ... | OCR Scan |
3 pages, |
EL 6022 PTC9001 TF PTC 431p 2N6678 2N6677 2N6676 ptc 200 ptc 205 ptc 500 ptc 60 TRANSISTOR 8073 TF PTC-401P transistor c 6073 circuit diagram ptc b TQ-204MA TQ-204MA abstract |
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| Abstract: b7E T> NPN 9 GHz wideband transistor BFG541 BFG541 FEATURES PINNING • High power gain PIN DESCRIPTION • , excellent reliability. 4 collector DESCRIPTION NPN silicon planar epitaxial transistor, intended for , wideband transistor BFG541 BFG541 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO , current - - 120 mA P« total power dissipation uptoTs= 115 °C (note 1) - - 650 mW hFE DC current gain l0 = 40 mA; VCE = 8 V; T, = 25 °C 60 120 250 feedback capacitance |c = 0; VCB = 8 V; f = 1 MHz - 0.7 ... | OCR Scan |
22 pages, |
lc 945 transistor transistor abe 438 BFG541 transistor LC 945 transistor c 6073 E5D33 E5D33 abstract |
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| Abstract: NEC's NPN SILICON TRANSISTOR NE894M03 NE894M03 FEATURES · OUTLINE DIMENSIONS (Units in mm) MINIATURE M03 PACKAGE:  Small transistor outline  Low profile / 0.59 mm package height  Flat lead style , 1.4 ±0.1 0.45 (0.9) 0.3±0.1 3 1 0.2±0.1 DESCRIPTION NEC's NE894M03 NE894M03 transistor is , Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE , ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to ... | Original |
8 pages, |
K 3053 TRANSISTOR SiS 671 S21E NE894M03 2SC5786 BJT BF 331 BF 6591 AN1026 kf 982 0809 af transistor c 6073 NE894M03 abstract |
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| Abstract: profile 1.1 General description Enhancement type N-channel field-effect transistor with source and , drain current DC Ptot total power dissipation Tsp 107 °C |yfs| forward transfer admittance f = 100 MHz; Tj = 25 °C; ID = 18 mA Ciss(G1) input capacitance at gate1 f = 100 MHz , - 150 °C [1] f = 400 MHz; YS = YS(opt) f = 800 MHz; YS = YS(opt) Xmod cross , - ±10 mA IG2 gate2 current - ±10 mA Tsp 107 °C [1] Ptot total ... | Original |
17 pages, |
9935 mosfet MOSFET 7121 BF1217WR BF1217WR abstract |
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| Abstract: profile 1.1 General description Enhancement type N-channel field-effect transistor with source and , Xmod Quick reference data Conditions DC DC Tsp 107 C f = 100 MHz; Tj = 25 C; ID = 18 mA f = 100 MHz f , test circuit. - - 150 C 2. Pinning information Table 2. Pin 1 2 3 4 Discrete pinning , 10 180 +150 150 Unit V mA mA mA mW C C Per MOSFET Tsp 107 C [1] 65 - Tsp is the , 0 0 50 100 150 Tsp (°C) 200 Fig 1. Power derating curve BF1217WR BF1217WR All information ... | Original |
17 pages, |
mosfet cross reference BF1217WR BF1217WR abstract |
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| Abstract: Ordering number : ENN7329 ENN7329 EC3H08B EC3H08B NPN Epitaxial Planar Silicon Transistor EC3H08B EC3H08B UHF to S , Features 1 : Base 2 : Emitter 3 : Collector SANYO : ECSP1006-3 ECSP1006-3 Absolute Maximum Ratings at Ta=25°C , Junction Temperature IC PC Tj 150 °C Storage Temperature Tstg -55 to +150 °C , TA-3666 TA-3666 No.7329-1/7 EC3H08B EC3H08B Electrical Characteristics at Ta=25°C Parameter Symbol Collector , 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - °C 140 ... | Original |
7 pages, |
zo 607 MA ECSP1006-3 EC3H08B D2502 ic 7808 transistor c 6073 ENN7329 ENN7329 abstract |
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| Abstract: Ordering number : ENN7329 ENN7329 EC3H08B EC3H08B NPN Epitaxial Planar Silicon Transistor EC3H08B EC3H08B UHF to S , Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit 9 , °C Storage Temperature Tstg -55 to +150 °C Collector Current Marking : L Pay , JAPAN D2502 D2502 TS IM TA-3666 TA-3666 No.7329-1/7 EC3H08B EC3H08B Electrical Characteristics at Ta=25°C Parameter , 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - °C 140 ... | Original |
7 pages, |
ECSP1006-3 EC3H08B D2502 9746 ENN7329 ENN7329 abstract |
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| Abstract: Empfänger aufsteckbar oder absetzbar volltransistorisiert -20. +50° C Sender Senderleistung , : ±1,8 kHz im Umgebungstemperaturbereich von -10 . +40° C < 0,2 \i\N Nebenwellenleistung < 20 fiW , zugelassen bei der Deutschen Bundespost unter Nr. D-446/63 D-446/63 a, b, c und E 489/64 TELEPORT VI 1-11 1.4. , Kondensators (C 2) betriebene Umschaltrelais (Rs 1) für die Umschaltung Senden/Empfangen. Das Gehäuseoberteil , verriegelt. O O ® (1) Q â- U , M Nachladen der Batterie Die Batterie des Sprechfunkgerätes ... | OCR Scan |
129 pages, |
telefunken ra 200 telefunken R101 6 TFK 106 2X20 TFK U 111 B 45A transistor c 6073 tfk u 6056 transistor d446 Telefunken u 439 TFK S 417 T str w 6052 TELEFUNKEN* U 111 B datasheet abstract |
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| Abstract: Model Mirrors (12% detection distance attenuation) F39-MLG2134 F39-MLG2134 (c)Copyright OMRON Corporation , ) Control outputs Two PNP transistor outputs, load current 500 mA or less (residual voltage 2 V or less , output: one PNP transistor output (non-safety output), load current 100 mA or less (residual voltage 1 V , ON OFF 20 ms max. Ambient temperature Operating/Storage: 0 to 55 C (with no icing or , AOPD (Active Opto-electronic Protective Devices) http://www.ia.omron.com/ (c)Copyright OMRON ... | Original |
14 pages, |
F39-MLG0711 F39-MLG1422 F3SL-A1746 fence light Infrared light human detection ISO13855-2002 sensor optical A1046 13855 relay omron diagram omron plc F39-MLG1219 F39-MLG F39-MLG1626 datasheet abstract |
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| Size Document Number Date Update Pages Portable Document Format 6073 15/06/1999 5 Raw Text Format STTA406 STTA406 STTA406 STTA406 [ November 1999 - Ed: 3C reverse voltage 600 V I P Peak forward current (1) Tamb = 655C d = 0.5 4 A I FRM current tp = 10 ms sinusoidal 80 A T j Maximum operating junction temperature 125 5C T stg Storage temperature range - 40 to 150 5C (1) square waveform and on infinite heatsink ABSOLUTE RATINGS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6073-v3.htm |
STMicroelectronics | 25/05/2000 | 8.79 Kb | HTM | 6073-v3.htm |
| Document Number Date Update Pages Portable Document Format 6073 15/06/1999 5 Raw Text Format STTA406 STTA406 STTA406 STTA406 [ November 1999 - Ed: 3C TURBOSWITCH E ULTRA-FAST HIGH forward current (1) Tamb = 655C d = 0.5 4 A I FRM Repetitive peak forward current tp = 5 m s Maximum operating junction temperature 125 5C T stg Storage temperature range - 40 to 150 5C (1 POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES AND www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6073.htm |
STMicroelectronics | 20/10/2000 | 9.26 Kb | HTM | 6073.htm |
| -FAST HIGH VOLTAGE DIODE Document Number: 6073 Date Update: 08/12/98 Pages: 5 The current (1) Tamb = 655C d = 0.5 4 A I FRM Repetitive peak forward current tp = 5 m s F = 5kHz square junction temperature 125 5C T stg Storage temperature range - 40 to 150 5C (1) square waveform and on THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES AND BENEFITS The TURBOSWITCH is a very Parameter Max. Unit R th(j-l) Junction to lead L lead = 10mm 20 5 C/W R th(j-a) Junction to ambient on www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6073-v1.htm |
STMicroelectronics | 02/04/1999 | 7.16 Kb | HTM | 6073-v1.htm |
| -FAST HIGH VOLTAGE DIODE Document Number: 6073 Date Update: 08/12/98 Pages: 5 The current (1) Tamb = 655C d = 0.5 4 A I FRM Repetitive peak forward current tp = 5 m s F = 5kHz square junction temperature 125 5C T stg Storage temperature range - 40 to 150 5C (1) square waveform and on THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES AND BENEFITS The TURBOSWITCH is a very Parameter Max. Unit R th(j-l) Junction to lead L lead = 10mm 20 5 C/W R th(j-a) Junction to ambient on www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6073-v2.htm |
STMicroelectronics | 14/06/1999 | 7.12 Kb | HTM | 6073-v2.htm |
| ! BFQ645 BFQ645 BFQ645 BFQ645 Si-NPN RF-Transistor in CEREC package ! V ce = 8V I c = 7mA # GHZ S MA R 50 .06 .789697 -16.11 19.25068 168.86 .008915 81.82 .973430 -7.06 .08 .783037 -21.37 19.03353 165.41 .011748 79.77 .964734 -9.36 .1 .773527 -26.41 18.74443 161.84 .014561 77.24 .953440 -11.57 .15 .750152 -38.77 17.96135 153.77 .021006 71.27 .917801 -16.67 .2 .722136 -50.08 16.96305 146.35 .026673 66.44 .876135 -21.07 .25 .692307 -60.73 15.91288 139.56 .031279 62 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq645/ab8v07m0.s2p |
Siemens | 02/07/1993 | 2.08 Kb | S2P | ab8v07m0.s2p |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 25 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .5 0.6071 -28.9 1.500 0.4235 146.5 1.713 46.1 0.1297 74.5 0.6073 -30.9 1.600 0 .5653 105.9 0.882 11.5 0.3081 67.4 0.5973 -70.4 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB10V25M.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 6 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .1 0.6073 -31.4 1.500 0.3974 153.3 1.730 50.8 0.1280 69.6 0.6062 -33.4 1.600 0 .5317 108.9 0.918 14.6 0.2981 65.6 0.5951 -71.3 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB10V6M0.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 15 V IC = 0.5 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .1 0.8696 -22.9 0.900 0.6316 -120.6 1.129 88.4 0.1133 33.7 0.8592 -25.0 1.000 0.6073 .6153 114.0 0.462 29.1 0.2573 76.1 0.7857 -77.5 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB15VM50.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 8 V IC = 4 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .2 0.6073 -47.3 2.200 0.4703 130.9 1.147 31.8 0.1970 69.3 0.6045 -52.4 2.400 0 .5430 108.8 0.860 15.4 0.3042 64.7 0.5951 -75.6 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB8V04M0.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 8 V IC = 0.3 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .2 0.8479 -38.8 1.500 0.6125 -166.7 0.611 55.2 0.1201 23.2 0.8457 -41.2 1.600 0.6073 .6466 115.3 0.387 34.7 0.2603 73.4 0.7891 -87.1 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB8V0M30.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |